AU2002324889A1 - Method for achieving device-quality, lattice- mismatched, heteroepitaxial active layers - Google Patents

Method for achieving device-quality, lattice- mismatched, heteroepitaxial active layers

Info

Publication number
AU2002324889A1
AU2002324889A1 AU2002324889A AU2002324889A AU2002324889A1 AU 2002324889 A1 AU2002324889 A1 AU 2002324889A1 AU 2002324889 A AU2002324889 A AU 2002324889A AU 2002324889 A AU2002324889 A AU 2002324889A AU 2002324889 A1 AU2002324889 A1 AU 2002324889A1
Authority
AU
Australia
Prior art keywords
heteroepitaxial
mismatched
lattice
quality
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002324889A
Inventor
S. Phillip Ahrenkiel
Mark W. Wanlass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midwest Research Institute
Original Assignee
Midwest Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Institute filed Critical Midwest Research Institute
Publication of AU2002324889A1 publication Critical patent/AU2002324889A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
AU2002324889A 2002-09-05 2002-09-05 Method for achieving device-quality, lattice- mismatched, heteroepitaxial active layers Abandoned AU2002324889A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/028314 WO2004022820A1 (en) 2002-09-05 2002-09-05 Method for achieving device-quality, lattice- mismatched, heteroepitaxial active layers

Publications (1)

Publication Number Publication Date
AU2002324889A1 true AU2002324889A1 (en) 2004-03-29

Family

ID=31975584

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002324889A Abandoned AU2002324889A1 (en) 2002-09-05 2002-09-05 Method for achieving device-quality, lattice- mismatched, heteroepitaxial active layers

Country Status (2)

Country Link
AU (1) AU2002324889A1 (en)
WO (1) WO2004022820A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173891B2 (en) 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US20060162768A1 (en) 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
KR101431296B1 (en) 2007-01-11 2014-08-20 레드 밴드 리미티드 Method and system for in-place updating content stored in a storage device
US8575471B2 (en) 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8961687B2 (en) 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
US8507365B2 (en) 2009-12-21 2013-08-13 Alliance For Sustainable Energy, Llc Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
JP5852660B2 (en) 2010-10-12 2016-02-03 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー III-V compounds with large band gaps for highly efficient optoelectronics
US9041027B2 (en) 2010-12-01 2015-05-26 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
EP4250375A3 (en) * 2018-01-17 2023-11-01 SolAero Technologies Corp. Four junction solar cell and solar cell assemblies for space applications

Also Published As

Publication number Publication date
WO2004022820A1 (en) 2004-03-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase