AU2002309201A1 - Microelectronic device and method of its manufacture - Google Patents

Microelectronic device and method of its manufacture

Info

Publication number
AU2002309201A1
AU2002309201A1 AU2002309201A AU2002309201A AU2002309201A1 AU 2002309201 A1 AU2002309201 A1 AU 2002309201A1 AU 2002309201 A AU2002309201 A AU 2002309201A AU 2002309201 A AU2002309201 A AU 2002309201A AU 2002309201 A1 AU2002309201 A1 AU 2002309201A1
Authority
AU
Australia
Prior art keywords
manufacture
microelectronic device
microelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002309201A
Inventor
John Carlton Jackson
Alan Mathewson
Alan Morrison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NATIONAL MICROELECTRONIC RESEARCH CENTRE
Original Assignee
NAT MICROELECTRONIC RES CT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT MICROELECTRONIC RES CT filed Critical NAT MICROELECTRONIC RES CT
Publication of AU2002309201A1 publication Critical patent/AU2002309201A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
AU2002309201A 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture Abandoned AU2002309201A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IES010616 2001-06-28
IES20010616 IES20010616A2 (en) 2001-06-28 2001-06-28 Microelectronic device and method of its manufacture
PCT/IE2002/000074 WO2003003476A2 (en) 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture

Publications (1)

Publication Number Publication Date
AU2002309201A1 true AU2002309201A1 (en) 2003-03-03

Family

ID=11042806

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002309201A Abandoned AU2002309201A1 (en) 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture

Country Status (3)

Country Link
AU (1) AU2002309201A1 (en)
IE (1) IES20010616A2 (en)
WO (1) WO2003003476A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7341921B2 (en) 2003-05-14 2008-03-11 University College Cork - National University Of Ireland, Cork Photodiode
RU2290721C2 (en) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Silicon photoelectronic multiplier (alternatives) and locations for silicon photoelectronic multiplier
EP1679749A1 (en) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor photodiode and method of making
US8093624B1 (en) 2006-02-15 2012-01-10 Massachusetts Institute Of Technology High fill-factor avalanche photodiode
JP5183471B2 (en) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 Photodiode array
GB2485400B (en) * 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
CN112018142A (en) * 2016-06-21 2020-12-01 深圳帧观德芯科技有限公司 Avalanche photodiode based image sensor
CN109459149A (en) * 2018-10-11 2019-03-12 桂林电子科技大学 A kind of measurement of high-precision single photon detection chip real time temperature and performance optimization system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857759A (en) * 1981-10-01 1983-04-06 Fujitsu Ltd Formation of guard ring of light sensible element
JPS5941877A (en) * 1982-08-31 1984-03-08 Junichi Nishizawa Phototransistor
FR2633101B1 (en) * 1988-06-16 1992-02-07 Commissariat Energie Atomique PHOTODIODE AND MATRIX OF PHOTODIODES ON HGCDTE AND METHODS OF MAKING SAME
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
IT1317199B1 (en) * 2000-04-10 2003-05-27 Milano Politecnico ULTRASENSITIVE PHOTO-DETECTOR DEVICE WITH INTEGRATED MICROMETRIC DIAPHRAGM FOR CONFOCAL MICROSCOPES

Also Published As

Publication number Publication date
IES20010616A2 (en) 2002-05-15
WO2003003476A2 (en) 2003-01-09
WO2003003476A3 (en) 2003-12-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase