AU2002239742A1 - Controlled anneal conductors for integrated circuit interconnects - Google Patents
Controlled anneal conductors for integrated circuit interconnectsInfo
- Publication number
- AU2002239742A1 AU2002239742A1 AU2002239742A AU3974202A AU2002239742A1 AU 2002239742 A1 AU2002239742 A1 AU 2002239742A1 AU 2002239742 A AU2002239742 A AU 2002239742A AU 3974202 A AU3974202 A AU 3974202A AU 2002239742 A1 AU2002239742 A1 AU 2002239742A1
- Authority
- AU
- Australia
- Prior art keywords
- conductors
- integrated circuit
- circuit interconnects
- controlled anneal
- anneal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004020 conductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/745,917 | 2000-12-20 | ||
US09/745,917 US6403474B1 (en) | 2000-12-20 | 2000-12-20 | Controlled anneal conductors for integrated circuit interconnects |
PCT/US2001/050969 WO2002050895A2 (en) | 2000-12-20 | 2001-10-23 | Controlled anneal conductors for integrated circuit interconnects |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002239742A1 true AU2002239742A1 (en) | 2002-07-01 |
Family
ID=24998778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002239742A Abandoned AU2002239742A1 (en) | 2000-12-20 | 2001-10-23 | Controlled anneal conductors for integrated circuit interconnects |
Country Status (4)
Country | Link |
---|---|
US (1) | US6403474B1 (en) |
AU (1) | AU2002239742A1 (en) |
TW (1) | TW552644B (en) |
WO (1) | WO2002050895A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6656836B1 (en) * | 2002-03-18 | 2003-12-02 | Advanced Micro Devices, Inc. | Method of performing a two stage anneal in the formation of an alloy interconnect |
US6806542B1 (en) * | 2003-06-30 | 2004-10-19 | Motorola, Inc. | Electronic device having a filled dielectric medium |
US9806253B2 (en) | 2015-11-16 | 2017-10-31 | Samsung Electronics Co., Ltd. | Method for providing a high perpendicular magnetic anisotropy layer in a magnetic junction usable in spin transfer torque magnetic devices using multiple anneals |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5932289A (en) * | 1991-05-28 | 1999-08-03 | Trikon Technologies Limited | Method for filling substrate recesses using pressure and heat treatment |
US5494860A (en) * | 1995-03-14 | 1996-02-27 | International Business Machines Corporation | Two step annealing process for decreasing contact resistance |
US6297154B1 (en) * | 1998-08-28 | 2001-10-02 | Agere System Guardian Corp. | Process for semiconductor device fabrication having copper interconnects |
JP3187011B2 (en) * | 1998-08-31 | 2001-07-11 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JP2000223491A (en) * | 1999-01-29 | 2000-08-11 | Ulvac Japan Ltd | Cu film forming method |
EP1069213A3 (en) * | 1999-07-12 | 2004-01-28 | Applied Materials, Inc. | Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper |
-
2000
- 2000-12-20 US US09/745,917 patent/US6403474B1/en not_active Expired - Lifetime
-
2001
- 2001-10-23 AU AU2002239742A patent/AU2002239742A1/en not_active Abandoned
- 2001-10-23 WO PCT/US2001/050969 patent/WO2002050895A2/en active Application Filing
- 2001-12-19 TW TW090131436A patent/TW552644B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6403474B1 (en) | 2002-06-11 |
TW552644B (en) | 2003-09-11 |
WO2002050895A3 (en) | 2003-04-17 |
WO2002050895A2 (en) | 2002-06-27 |
US20020076923A1 (en) | 2002-06-20 |
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