AU2002232848A1 - Non-volatile magnetic memory device - Google Patents

Non-volatile magnetic memory device

Info

Publication number
AU2002232848A1
AU2002232848A1 AU2002232848A AU3284802A AU2002232848A1 AU 2002232848 A1 AU2002232848 A1 AU 2002232848A1 AU 2002232848 A AU2002232848 A AU 2002232848A AU 3284802 A AU3284802 A AU 3284802A AU 2002232848 A1 AU2002232848 A1 AU 2002232848A1
Authority
AU
Australia
Prior art keywords
memory device
magnetic memory
volatile magnetic
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002232848A
Inventor
Dan Carothers
Bruce Shipley
James Stephenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2002232848A1 publication Critical patent/AU2002232848A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
AU2002232848A 2000-10-20 2001-10-19 Non-volatile magnetic memory device Abandoned AU2002232848A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24239600P 2000-10-20 2000-10-20
US60/242,396 2000-10-20
PCT/US2001/050368 WO2002033705A2 (en) 2000-10-20 2001-10-19 Non-volatile magnetic memory device

Publications (1)

Publication Number Publication Date
AU2002232848A1 true AU2002232848A1 (en) 2002-04-29

Family

ID=22914625

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002232848A Abandoned AU2002232848A1 (en) 2000-10-20 2001-10-19 Non-volatile magnetic memory device

Country Status (3)

Country Link
US (4) US7110312B2 (en)
AU (1) AU2002232848A1 (en)
WO (1) WO2002033705A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002033705A2 (en) * 2000-10-20 2002-04-25 James Stephenson Non-volatile magnetic memory device
US6836429B2 (en) * 2002-12-07 2004-12-28 Hewlett-Packard Development Company, L.P. MRAM having two write conductors
EP1610387B1 (en) * 2003-03-31 2010-05-19 Panasonic Corporation Memory cell, memory using the memory cell, memory cell manufacturing method, and memory recording/reading method
KR20060132611A (en) * 2003-11-10 2006-12-21 씨엠 이노베이션, 인크. Solid state magnetic memory system and method
JP2008507805A (en) * 2004-07-27 2008-03-13 ユニバーシティー オブ トロント Adjustable magnetic switch
US20060262593A1 (en) * 2004-07-27 2006-11-23 Stephane Aouba Magnetic memory composition and method of manufacture
EP1844470A4 (en) * 2005-01-31 2009-12-02 Univ Toronto Magnetic memory composition and method of manufacture
US7701756B2 (en) 2005-12-21 2010-04-20 Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
KR100862183B1 (en) * 2007-06-29 2008-10-09 고려대학교 산학협력단 Magnetic memory device
US7834385B2 (en) * 2008-08-08 2010-11-16 Seagate Technology Llc Multi-bit STRAM memory cells
US8482970B2 (en) 2008-08-08 2013-07-09 Seagate Technology Llc Multi-bit STRAM memory cells
GB0816640D0 (en) * 2008-09-12 2008-10-22 Univ Durham Data storage device
EP2478306A4 (en) * 2009-09-16 2016-11-30 Solar Logic Inc Solar energy power generation system
US9202544B2 (en) 2011-08-02 2015-12-01 Ramot At Tel Aviv University Ltd. Multi-bit magnetic memory cell
AU2014336414B2 (en) * 2013-10-14 2018-09-27 Cololact A/S A breast pump device
JP7010741B2 (en) * 2018-03-19 2022-01-26 キオクシア株式会社 Magnetic storage device
US20240017045A1 (en) * 2020-10-21 2024-01-18 Massachusetts Institute Of Technology Gravity based drug delivery device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE540911A (en) * 1954-08-31
GB2039431A (en) * 1979-01-11 1980-08-06 Honeywell Inc Thin film memory
US4293686A (en) 1980-04-18 1981-10-06 Union Carbide Corporation Thermosetting polyester resin composition
CH659896A5 (en) * 1982-11-22 1987-02-27 Landis & Gyr Ag MAGNETIC SENSOR.
US4791604A (en) * 1984-02-15 1988-12-13 Joseph J. Bednarz Sheet random access memory
US4803658A (en) * 1987-01-15 1989-02-07 Westinghouse Electric Corp. Cross tie random access memory
US5025416A (en) * 1989-06-01 1991-06-18 The United States Of America As Represented By The Secretary Of The Navy Thin film magnetic memory elements
US5075247A (en) * 1990-01-18 1991-12-24 Microunity Systems Engineering, Inc. Method of making hall effect semiconductor memory cell
US5329480A (en) * 1990-11-15 1994-07-12 California Institute Of Technology Nonvolatile random access memory
US5289410A (en) * 1992-06-29 1994-02-22 California Institute Of Technology Non-volatile magnetic random access memory
US5295097A (en) * 1992-08-05 1994-03-15 Lienau Richard M Nonvolatile random access memory
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US6016269A (en) * 1998-09-30 2000-01-18 Motorola, Inc. Quantum random address memory with magnetic readout and/or nano-memory elements
US6266267B1 (en) * 1999-03-04 2001-07-24 Pageant Technologies, Inc. Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6515897B1 (en) * 2000-04-13 2003-02-04 International Business Machines Corporation Magnetic random access memory using a non-linear memory element select mechanism
WO2002033705A2 (en) * 2000-10-20 2002-04-25 James Stephenson Non-volatile magnetic memory device
US6906947B2 (en) * 2002-02-22 2005-06-14 Hewlett-Packard Development Company, L.P. In-plane toroidal memory cell with vertically stepped conductors
US7020015B1 (en) * 2002-10-03 2006-03-28 Idaho Research Foundation, Inc. Magnetic elements having unique shapes
JP4868431B2 (en) * 2003-10-10 2012-02-01 Tdk株式会社 Magnetic storage cell and magnetic memory device

Also Published As

Publication number Publication date
WO2002033705A3 (en) 2003-02-13
US20080205129A1 (en) 2008-08-28
WO2002033705A9 (en) 2003-09-18
WO2002033705A2 (en) 2002-04-25
US7376007B2 (en) 2008-05-20
US7616477B2 (en) 2009-11-10
US20030007395A1 (en) 2003-01-09
US7110312B2 (en) 2006-09-19
US20100020596A1 (en) 2010-01-28
US20060285383A1 (en) 2006-12-21

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