AU2002219895A1 - Bipolar transistor with lattice matched base layer - Google Patents
Bipolar transistor with lattice matched base layerInfo
- Publication number
- AU2002219895A1 AU2002219895A1 AU2002219895A AU1989502A AU2002219895A1 AU 2002219895 A1 AU2002219895 A1 AU 2002219895A1 AU 2002219895 A AU2002219895 A AU 2002219895A AU 1989502 A AU1989502 A AU 1989502A AU 2002219895 A1 AU2002219895 A1 AU 2002219895A1
- Authority
- AU
- Australia
- Prior art keywords
- base layer
- bipolar transistor
- lattice matched
- matched base
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25315900P | 2000-11-27 | 2000-11-27 | |
US60/253,159 | 2000-11-27 | ||
PCT/US2001/044471 WO2002043155A2 (en) | 2000-11-27 | 2001-11-27 | Bipolar transistor with lattice matched base layer |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002219895A1 true AU2002219895A1 (en) | 2002-06-03 |
Family
ID=22959119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002219895A Abandoned AU2002219895A1 (en) | 2000-11-27 | 2001-11-27 | Bipolar transistor with lattice matched base layer |
Country Status (4)
Country | Link |
---|---|
US (2) | US6750480B2 (en) |
JP (1) | JP2004521485A (en) |
AU (1) | AU2002219895A1 (en) |
WO (1) | WO2002043155A2 (en) |
Families Citing this family (52)
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US7345327B2 (en) | 2000-11-27 | 2008-03-18 | Kopin Corporation | Bipolar transistor |
WO2002043155A2 (en) | 2000-11-27 | 2002-05-30 | Kopin Corporation | Bipolar transistor with lattice matched base layer |
US6847060B2 (en) * | 2000-11-27 | 2005-01-25 | Kopin Corporation | Bipolar transistor with graded base layer |
JP2004521492A (en) | 2001-01-08 | 2004-07-15 | コピン コーポレーション | Method for preparing indium phosphide heterojunction bipolar transistor |
US6917061B2 (en) * | 2001-07-20 | 2005-07-12 | Microlink Devices, Inc. | AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor |
WO2003077283A2 (en) * | 2002-03-04 | 2003-09-18 | Yale University | Drift-dominated detector |
US6764926B2 (en) * | 2002-03-25 | 2004-07-20 | Agilent Technologies, Inc. | Method for obtaining high quality InGaAsN semiconductor devices |
JP4025227B2 (en) * | 2002-03-29 | 2007-12-19 | 株式会社東芝 | Semiconductor laminated substrate and optical semiconductor element |
JP3936618B2 (en) * | 2002-04-19 | 2007-06-27 | 住友化学株式会社 | Thin film semiconductor epitaxial substrate and manufacturing method thereof |
US7019383B2 (en) | 2003-02-26 | 2006-03-28 | Skyworks Solutions, Inc. | Gallium arsenide HBT having increased performance and method for its fabrication |
KR101429098B1 (en) | 2004-06-04 | 2014-09-22 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | Methods and devices for fabricating and assembling printable semiconductor elements |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
US7807921B2 (en) * | 2004-06-15 | 2010-10-05 | The Boeing Company | Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer |
US7566948B2 (en) | 2004-10-20 | 2009-07-28 | Kopin Corporation | Bipolar transistor with enhanced base transport |
KR101588019B1 (en) * | 2006-09-20 | 2016-02-12 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | Release strategies for making transferable semiconductor structures, devices and device components |
WO2008143635A1 (en) * | 2007-01-17 | 2008-11-27 | The Board Of Trustees Of The University Of Illinois | Optical systems fabricated by printing-based assembly |
US7750371B2 (en) * | 2007-04-30 | 2010-07-06 | International Business Machines Corporation | Silicon germanium heterojunction bipolar transistor structure and method |
TWI506775B (en) * | 2007-04-30 | 2015-11-01 | Ultratech Inc | Silicon germanium heterojunction bipolar transistor structure and method |
US7900167B2 (en) * | 2007-10-24 | 2011-03-01 | International Business Machines Corporation | Silicon germanium heterojunction bipolar transistor structure and method |
JP5743553B2 (en) | 2008-03-05 | 2015-07-01 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | Stretchable and foldable electronic devices |
US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
JP5646492B2 (en) * | 2008-10-07 | 2014-12-24 | エムシー10 インコーポレイテッドMc10,Inc. | Stretchable integrated circuit and device with sensor array |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US8886334B2 (en) * | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8372726B2 (en) * | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
US8865489B2 (en) | 2009-05-12 | 2014-10-21 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
WO2010137260A1 (en) * | 2009-05-26 | 2010-12-02 | 住友化学株式会社 | Semiconductor substrate, process for producing semiconductor substrate, and electronic device |
WO2011041727A1 (en) | 2009-10-01 | 2011-04-07 | Mc10, Inc. | Protective cases with integrated electronics |
US20110218756A1 (en) * | 2009-10-01 | 2011-09-08 | Mc10, Inc. | Methods and apparatus for conformal sensing of force and/or acceleration at a person's head |
US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
EP2513953B1 (en) | 2009-12-16 | 2017-10-18 | The Board of Trustees of the University of Illionis | Electrophysiology using conformal electronics |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
EP2547258B1 (en) * | 2010-03-17 | 2015-08-05 | The Board of Trustees of the University of Illionis | Implantable biomedical devices on bioresorbable substrates |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
US9765934B2 (en) | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
WO2012166686A2 (en) | 2011-05-27 | 2012-12-06 | Mc10, Inc. | Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same |
WO2012167096A2 (en) | 2011-06-03 | 2012-12-06 | The Board Of Trustees Of The University Of Illinois | Conformable actively multiplexed high-density surface electrode array for brain interfacing |
JP5820402B2 (en) * | 2011-06-30 | 2015-11-24 | 株式会社Joled | THIN FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DEVICE |
US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
FR2981195A1 (en) | 2011-10-11 | 2013-04-12 | Soitec Silicon On Insulator | MULTI-JUNCTION IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES |
WO2013058640A2 (en) | 2011-10-20 | 2013-04-25 | Zepeda Lopez Hector Manuel | Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma |
KR101979354B1 (en) | 2011-12-01 | 2019-08-29 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | Transient devices designed to undergo programmable transformations |
CN105283122B (en) | 2012-03-30 | 2020-02-18 | 伊利诺伊大学评议会 | Appendage mountable electronic device conformable to a surface |
EP3567629A3 (en) | 2012-06-14 | 2020-01-22 | Skyworks Solutions, Inc. | Power amplifier modules including related systems, devices, and methods |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
WO2014148194A1 (en) | 2013-03-19 | 2014-09-25 | 株式会社村田製作所 | Heterojunction bipolar transistor |
EP3304130B1 (en) | 2015-06-01 | 2021-10-06 | The Board of Trustees of the University of Illinois | Alternative approach to uv sensing |
EP3304430A4 (en) | 2015-06-01 | 2019-03-06 | The Board of Trustees of the University of Illionis | Miniaturized electronic systems with wireless power and near-field communication capabilities |
US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
JP2018010896A (en) | 2016-07-11 | 2018-01-18 | 株式会社村田製作所 | Heterojunction bipolar transistor |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4518979A (en) | 1982-06-30 | 1985-05-21 | International Business Machines Corporation | Semiconductor transistor with graded base and collector |
JPH0669222A (en) | 1992-08-17 | 1994-03-11 | Matsushita Electric Ind Co Ltd | Hetero-junction bipolar transistor and its production |
JP2771423B2 (en) | 1993-05-20 | 1998-07-02 | 日本電気株式会社 | Bipolar transistor |
US5571732A (en) | 1993-08-19 | 1996-11-05 | Texas Instruments Incorporated | Method for fabricating a bipolar transistor |
JPH08162471A (en) | 1994-12-01 | 1996-06-21 | Furukawa Electric Co Ltd:The | Heterojunction bipolar transistor |
US5606185A (en) | 1994-12-01 | 1997-02-25 | Hughes Aircraft Company | Parabolically graded base-collector double heterojunction bipolar transistor |
KR0171376B1 (en) | 1995-12-20 | 1999-03-30 | 양승택 | Apitaxi forming method of compound semiconductor |
JP2955986B2 (en) * | 1996-05-22 | 1999-10-04 | 日本電気株式会社 | Semiconductor optical modulator and method of manufacturing the same |
US6285044B1 (en) | 1997-01-08 | 2001-09-04 | Telcordia Technologies, Inc. | InP-based heterojunction bipolar transistor with reduced base-collector capacitance |
US6232138B1 (en) | 1997-12-01 | 2001-05-15 | Massachusetts Institute Of Technology | Relaxed InxGa(1-x)as buffers |
US6150677A (en) | 1998-02-19 | 2000-11-21 | Sumitomo Electric Industries, Ltd. | Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device |
JP3628873B2 (en) | 1998-04-28 | 2005-03-16 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
US6031256A (en) | 1999-01-05 | 2000-02-29 | National Science Council Of Republic Of China | Wide voltage operation regime double heterojunction bipolar transistor |
FR2795871B1 (en) | 1999-07-01 | 2001-09-14 | Picogiga Sa | HETEROJUNCTION TRANSISTOR III-V, IN PARTICULAR HEMT FIELD-EFFECT TRANSISTOR OR BIPOLAR HETEROJUNCTION TRANSISTOR |
US7074697B2 (en) * | 1999-10-01 | 2006-07-11 | The Regents Of The University Of California | Doping-assisted defect control in compound semiconductors |
US6765242B1 (en) * | 2000-04-11 | 2004-07-20 | Sandia Corporation | Npn double heterostructure bipolar transistor with ingaasn base region |
US20020102847A1 (en) * | 2000-09-19 | 2002-08-01 | Sharps Paul R. | MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications |
WO2002043155A2 (en) | 2000-11-27 | 2002-05-30 | Kopin Corporation | Bipolar transistor with lattice matched base layer |
US6847060B2 (en) * | 2000-11-27 | 2005-01-25 | Kopin Corporation | Bipolar transistor with graded base layer |
-
2001
- 2001-11-27 WO PCT/US2001/044471 patent/WO2002043155A2/en active Application Filing
- 2001-11-27 US US09/995,079 patent/US6750480B2/en not_active Expired - Lifetime
- 2001-11-27 JP JP2002544788A patent/JP2004521485A/en active Pending
- 2001-11-27 AU AU2002219895A patent/AU2002219895A1/en not_active Abandoned
-
2004
- 2004-04-14 US US10/824,697 patent/US7186624B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2004521485A (en) | 2004-07-15 |
WO2002043155A9 (en) | 2003-08-14 |
WO2002043155A3 (en) | 2002-08-29 |
WO2002043155A2 (en) | 2002-05-30 |
US7186624B2 (en) | 2007-03-06 |
US6750480B2 (en) | 2004-06-15 |
US20020121674A1 (en) | 2002-09-05 |
US20050064672A1 (en) | 2005-03-24 |
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