AU2002213278A1 - Multilayer devices having frequency agile materials - Google Patents
Multilayer devices having frequency agile materialsInfo
- Publication number
- AU2002213278A1 AU2002213278A1 AU2002213278A AU1327802A AU2002213278A1 AU 2002213278 A1 AU2002213278 A1 AU 2002213278A1 AU 2002213278 A AU2002213278 A AU 2002213278A AU 1327802 A AU1327802 A AU 1327802A AU 2002213278 A1 AU2002213278 A1 AU 2002213278A1
- Authority
- AU
- Australia
- Prior art keywords
- frequency agile
- multilayer devices
- materials
- agile materials
- multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69649700A | 2000-10-25 | 2000-10-25 | |
US09/696,497 | 2000-10-25 | ||
PCT/US2001/032292 WO2002035597A2 (en) | 2000-10-25 | 2001-10-16 | Multilayer devices having frequency agile materials |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002213278A1 true AU2002213278A1 (en) | 2002-05-06 |
Family
ID=24797310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002213278A Abandoned AU2002213278A1 (en) | 2000-10-25 | 2001-10-16 | Multilayer devices having frequency agile materials |
Country Status (3)
Country | Link |
---|---|
US (1) | US20020187359A1 (en) |
AU (1) | AU2002213278A1 (en) |
WO (1) | WO2002035597A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4842025B2 (en) * | 2006-06-19 | 2011-12-21 | 日揮触媒化成株式会社 | Method for forming metal oxide fine particle layer on conductive substrate |
US20170194515A9 (en) * | 2007-10-17 | 2017-07-06 | Heraeus Precious Metals North America Conshohocken Llc | Dielectric coating for single sided back contact solar cells |
CN113421858A (en) * | 2021-06-01 | 2021-09-21 | 湖南大学 | Insulated Gate Bipolar Transistor (IGBT) module internal insulation packaging layer control system based on electric field driving |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4584074A (en) * | 1982-12-07 | 1986-04-22 | International Standard Electric Corporation | Capacitors |
KR100327612B1 (en) * | 1996-05-21 | 2002-04-17 | 래리 디. 맥밀란 | Method and apparatus for misted liquid source deposition of thin films with increased yield |
US6303391B1 (en) * | 1997-06-26 | 2001-10-16 | Advanced Technology Materials, Inc. | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices |
US5801092A (en) * | 1997-09-04 | 1998-09-01 | Ayers; Michael R. | Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices |
-
2001
- 2001-10-16 AU AU2002213278A patent/AU2002213278A1/en not_active Abandoned
- 2001-10-16 WO PCT/US2001/032292 patent/WO2002035597A2/en active Application Filing
-
2002
- 2002-07-22 US US10/200,769 patent/US20020187359A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20020187359A1 (en) | 2002-12-12 |
WO2002035597A3 (en) | 2003-01-23 |
WO2002035597A2 (en) | 2002-05-02 |
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