AU2001296609A1 - High-density metal capacitor using dual-damascene copper interconnect - Google Patents
High-density metal capacitor using dual-damascene copper interconnectInfo
- Publication number
- AU2001296609A1 AU2001296609A1 AU2001296609A AU9660901A AU2001296609A1 AU 2001296609 A1 AU2001296609 A1 AU 2001296609A1 AU 2001296609 A AU2001296609 A AU 2001296609A AU 9660901 A AU9660901 A AU 9660901A AU 2001296609 A1 AU2001296609 A1 AU 2001296609A1
- Authority
- AU
- Australia
- Prior art keywords
- dual
- copper interconnect
- metal capacitor
- density metal
- damascene copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23791600P | 2000-10-03 | 2000-10-03 | |
US60/237,916 | 2000-10-03 | ||
PCT/US2001/031140 WO2002029892A2 (en) | 2000-10-03 | 2001-10-03 | High-density metal capacitor using dual-damascene copper interconnect |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001296609A1 true AU2001296609A1 (en) | 2002-04-15 |
Family
ID=22895772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001296609A Abandoned AU2001296609A1 (en) | 2000-10-03 | 2001-10-03 | High-density metal capacitor using dual-damascene copper interconnect |
Country Status (4)
Country | Link |
---|---|
US (3) | US6833604B2 (en) |
EP (1) | EP1328973A2 (en) |
AU (1) | AU2001296609A1 (en) |
WO (1) | WO2002029892A2 (en) |
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US6818545B2 (en) * | 2001-03-05 | 2004-11-16 | Megic Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
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US7060557B1 (en) * | 2002-07-05 | 2006-06-13 | Newport Fab, Llc, Inc. | Fabrication of high-density capacitors for mixed signal/RF circuits |
US6680521B1 (en) * | 2003-04-09 | 2004-01-20 | Newport Fab, Llc | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies |
US7566964B2 (en) * | 2003-04-10 | 2009-07-28 | Agere Systems Inc. | Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures |
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US9318378B2 (en) * | 2004-08-21 | 2016-04-19 | Globalfoundries Singapore Pte. Ltd. | Slot designs in wide metal lines |
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US7402463B2 (en) * | 2005-08-19 | 2008-07-22 | International Business Machines Corporation | Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application |
US7768055B2 (en) * | 2005-11-30 | 2010-08-03 | International Business Machines Corporation | Passive components in the back end of integrated circuits |
US7365009B2 (en) | 2006-01-04 | 2008-04-29 | United Microelectronics Corp. | Structure of metal interconnect and fabrication method thereof |
US20070152332A1 (en) * | 2006-01-04 | 2007-07-05 | International Business Machines Corporation | Single or dual damascene via level wirings and/or devices, and methods of fabricating same |
US7964470B2 (en) * | 2006-03-01 | 2011-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flexible processing method for metal-insulator-metal capacitor formation |
US7476971B2 (en) * | 2006-05-11 | 2009-01-13 | Toshiba America Electronic Components, Inc. | Via line barrier and etch stop structure |
US20080029844A1 (en) * | 2006-08-03 | 2008-02-07 | Adkisson James W | Anti-fuse structure optionally integrated with guard ring structure |
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US7944020B1 (en) * | 2006-12-22 | 2011-05-17 | Cypress Semiconductor Corporation | Reverse MIM capacitor |
US9177908B2 (en) * | 2007-04-30 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Limited | Stacked semiconductor capacitor structure |
US7968929B2 (en) * | 2007-08-07 | 2011-06-28 | International Business Machines Corporation | On-chip decoupling capacitor structures |
US7829450B2 (en) * | 2007-11-07 | 2010-11-09 | Infineon Technologies Ag | Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element |
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US8101495B2 (en) | 2008-03-13 | 2012-01-24 | Infineon Technologies Ag | MIM capacitors in semiconductor components |
JP5537016B2 (en) * | 2008-10-27 | 2014-07-02 | 株式会社東芝 | Semiconductor device and manufacturing method of semiconductor device |
KR101616044B1 (en) * | 2009-07-03 | 2016-04-28 | 삼성전자주식회사 | Semiconductor device comprising landing pad formed by electroless plating |
US8227339B2 (en) * | 2009-11-02 | 2012-07-24 | International Business Machines Corporation | Creation of vias and trenches with different depths |
US9941195B2 (en) | 2009-11-10 | 2018-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical metal insulator metal capacitor |
US8810002B2 (en) * | 2009-11-10 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical metal insulator metal capacitor |
US9343237B2 (en) | 2009-11-10 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical metal insulator metal capacitor |
US10283443B2 (en) | 2009-11-10 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chip package having integrated capacitor |
US8836127B2 (en) * | 2009-11-19 | 2014-09-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect with flexible dielectric layer |
FR2957459B1 (en) * | 2010-03-09 | 2013-09-27 | St Microelectronics Sa | METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT CONTAINING A METAL - INSULATING - METAL CAPACITOR AND CORRESPONDING INTEGRATED CIRCUIT |
FR2967299B1 (en) * | 2010-11-10 | 2013-06-28 | St Microelectronics Crolles 2 | INTEGRATED CIRCUIT WITH PROTECTION AGAINST COPPER EXTRUSIONS |
US8946854B2 (en) * | 2011-11-09 | 2015-02-03 | United Microelectronics Corporation | Metal-insulator-metal capacitor structure and method for manufacturing the same |
CN102394215B (en) * | 2011-11-30 | 2014-07-16 | 上海华力微电子有限公司 | Manufacturing method of multilayer metal-silicon oxide-metal capacitor |
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US9478508B1 (en) * | 2015-06-08 | 2016-10-25 | Raytheon Company | Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmission |
US10770539B2 (en) | 2018-09-25 | 2020-09-08 | Nxp B.V. | Fingered capacitor with low-K and ultra-low-K dielectric layers |
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-
2001
- 2001-10-03 AU AU2001296609A patent/AU2001296609A1/en not_active Abandoned
- 2001-10-03 WO PCT/US2001/031140 patent/WO2002029892A2/en active Application Filing
- 2001-10-03 EP EP01977494A patent/EP1328973A2/en not_active Withdrawn
- 2001-10-03 US US09/971,254 patent/US6833604B2/en not_active Expired - Lifetime
-
2004
- 2004-06-16 US US10/869,671 patent/US6902972B2/en not_active Expired - Lifetime
-
2005
- 2005-03-22 US US11/085,866 patent/US7187015B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2002029892A2 (en) | 2002-04-11 |
US20020038903A1 (en) | 2002-04-04 |
EP1328973A2 (en) | 2003-07-23 |
WO2002029892A3 (en) | 2003-03-06 |
US7187015B2 (en) | 2007-03-06 |
US20050161765A1 (en) | 2005-07-28 |
US6833604B2 (en) | 2004-12-21 |
US20040232520A1 (en) | 2004-11-25 |
US6902972B2 (en) | 2005-06-07 |
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