AU2001296272A1 - Semiconductor amorphous layer formed with energy beam - Google Patents
Semiconductor amorphous layer formed with energy beamInfo
- Publication number
- AU2001296272A1 AU2001296272A1 AU2001296272A AU9627201A AU2001296272A1 AU 2001296272 A1 AU2001296272 A1 AU 2001296272A1 AU 2001296272 A AU2001296272 A AU 2001296272A AU 9627201 A AU9627201 A AU 9627201A AU 2001296272 A1 AU2001296272 A1 AU 2001296272A1
- Authority
- AU
- Australia
- Prior art keywords
- layer formed
- energy beam
- amorphous layer
- semiconductor amorphous
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68958300A | 2000-10-12 | 2000-10-12 | |
US09689583 | 2000-10-12 | ||
PCT/US2001/029412 WO2002031872A1 (en) | 2000-10-12 | 2001-09-20 | Semiconductor amorphous layer formed with energy beam |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001296272A1 true AU2001296272A1 (en) | 2002-04-22 |
Family
ID=24769070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001296272A Abandoned AU2001296272A1 (en) | 2000-10-12 | 2001-09-20 | Semiconductor amorphous layer formed with energy beam |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001296272A1 (en) |
TW (1) | TW526605B (en) |
WO (1) | WO2002031872A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213412A (en) * | 1982-06-04 | 1983-12-12 | Hitachi Ltd | Semi-conductor device and manufacture thereof |
JPS61108187A (en) * | 1984-11-01 | 1986-05-26 | Seiko Epson Corp | Semiconductor photoelectronic device |
FR2650704B1 (en) * | 1989-08-01 | 1994-05-06 | Thomson Csf | PROCESS FOR THE MANUFACTURE BY EPITAXY OF MONOCRYSTALLINE LAYERS OF MATERIALS WITH DIFFERENT MESH PARAMETERS |
US5478653A (en) * | 1994-04-04 | 1995-12-26 | Guenzer; Charles S. | Bismuth titanate as a template layer for growth of crystallographically oriented silicon |
-
2001
- 2001-09-20 AU AU2001296272A patent/AU2001296272A1/en not_active Abandoned
- 2001-09-20 WO PCT/US2001/029412 patent/WO2002031872A1/en active Application Filing
- 2001-09-27 TW TW90123916A patent/TW526605B/en active
Also Published As
Publication number | Publication date |
---|---|
TW526605B (en) | 2003-04-01 |
WO2002031872A1 (en) | 2002-04-18 |
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