AU2001283228A1 - Method of fabricating thermally stable mtj cell and apparatus - Google Patents

Method of fabricating thermally stable mtj cell and apparatus

Info

Publication number
AU2001283228A1
AU2001283228A1 AU2001283228A AU8322801A AU2001283228A1 AU 2001283228 A1 AU2001283228 A1 AU 2001283228A1 AU 2001283228 A AU2001283228 A AU 2001283228A AU 8322801 A AU8322801 A AU 8322801A AU 2001283228 A1 AU2001283228 A1 AU 2001283228A1
Authority
AU
Australia
Prior art keywords
thermally stable
mtj cell
fabricating thermally
fabricating
stable mtj
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283228A
Inventor
Eugene Chen
Renu Whig Dave
Mark Deherrera
Mark Durlam
Jon Slaughter
Saied Tehrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001283228A1 publication Critical patent/AU2001283228A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
AU2001283228A 2000-08-21 2001-08-09 Method of fabricating thermally stable mtj cell and apparatus Abandoned AU2001283228A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/642,350 US6544801B1 (en) 2000-08-21 2000-08-21 Method of fabricating thermally stable MTJ cell and apparatus
US09/642,350 2000-08-21
PCT/US2001/024998 WO2002017409A2 (en) 2000-08-21 2001-08-09 Method of fabricating thermally stable mtj cell and apparatus

Publications (1)

Publication Number Publication Date
AU2001283228A1 true AU2001283228A1 (en) 2002-03-04

Family

ID=24576202

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283228A Abandoned AU2001283228A1 (en) 2000-08-21 2001-08-09 Method of fabricating thermally stable mtj cell and apparatus

Country Status (7)

Country Link
US (1) US6544801B1 (en)
JP (1) JP2004521478A (en)
KR (1) KR100851513B1 (en)
CN (1) CN100431187C (en)
AU (1) AU2001283228A1 (en)
TW (1) TW517404B (en)
WO (1) WO2002017409A2 (en)

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JP2004200245A (en) * 2002-12-16 2004-07-15 Nec Corp Magnetoresistive element and manufacturing method therefor
WO2005088745A1 (en) 2004-03-12 2005-09-22 Japan Science And Technology Agency Magnetoresistive element and its manufacturing method
US7122852B2 (en) * 2004-05-12 2006-10-17 Headway Technologies, Inc. Structure/method to fabricate a high performance magnetic tunneling junction MRAM
US6977181B1 (en) 2004-06-17 2005-12-20 Infincon Technologies Ag MTJ stack with crystallization inhibiting layer
US20070258170A1 (en) * 2004-08-27 2007-11-08 Shinji Yuasa Magnetic Tunnel Junction Device and Method of Manufacturing the Same
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US7770282B2 (en) * 2005-09-01 2010-08-10 Hitachi Global Storage Technologies Netherlands B.V. Method of making a magnetic sensing device having an insulator structure
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US20080173975A1 (en) * 2007-01-22 2008-07-24 International Business Machines Corporation Programmable resistor, switch or vertical memory cell
US7859025B2 (en) * 2007-12-06 2010-12-28 International Business Machines Corporation Metal ion transistor
US20100148167A1 (en) * 2008-12-12 2010-06-17 Everspin Technologies, Inc. Magnetic tunnel junction stack
US8184476B2 (en) 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
US8686484B2 (en) 2011-06-10 2014-04-01 Everspin Technologies, Inc. Spin-torque magnetoresistive memory element and method of fabricating same
US9425387B1 (en) 2015-09-08 2016-08-23 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US10141498B2 (en) 2015-12-10 2018-11-27 Everspin Technologies, Inc. Magnetoresistive stack, seed region thereof and method of manufacturing same
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US10062843B2 (en) 2015-12-11 2018-08-28 Samsung Electronics Co., Ltd. Variable resistive memory device and method of manufacturing the same
US10614953B2 (en) * 2016-01-12 2020-04-07 University Of Florida Research Foundation, Inc. Mitigation of contamination of electroplated cobalt-platinum films on substrates
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
KR102511828B1 (en) 2016-06-29 2023-03-21 삼성전자주식회사 Method for manufacturing magnetic memory device
US10014465B1 (en) 2017-04-03 2018-07-03 Headway Technologies, Inc. Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
US11088201B2 (en) * 2018-06-29 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
KR102577238B1 (en) 2018-09-21 2023-09-12 삼성전자주식회사 Method of manufacturing semiconductor device
US10950782B2 (en) 2019-02-14 2021-03-16 Headway Technologies, Inc. Nitride diffusion barrier structure for spintronic applications
US11264566B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US11264560B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
KR20220125050A (en) * 2021-03-04 2022-09-14 삼성전자주식회사 Magnetic tunneling junction device, memory device including the smae, and method of manufacturing the same

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Also Published As

Publication number Publication date
WO2002017409A3 (en) 2003-12-24
WO2002017409A2 (en) 2002-02-28
JP2004521478A (en) 2004-07-15
KR20030064386A (en) 2003-07-31
KR100851513B1 (en) 2008-08-11
US6544801B1 (en) 2003-04-08
CN1537336A (en) 2004-10-13
CN100431187C (en) 2008-11-05
TW517404B (en) 2003-01-11

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