AU2001275334A1 - Semiconductor memory having segmented row repair - Google Patents

Semiconductor memory having segmented row repair

Info

Publication number
AU2001275334A1
AU2001275334A1 AU2001275334A AU7533401A AU2001275334A1 AU 2001275334 A1 AU2001275334 A1 AU 2001275334A1 AU 2001275334 A AU2001275334 A AU 2001275334A AU 7533401 A AU7533401 A AU 7533401A AU 2001275334 A1 AU2001275334 A1 AU 2001275334A1
Authority
AU
Australia
Prior art keywords
row
primary
redundant
memory cells
wordline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001275334A
Inventor
Brent Keeth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001275334A1 publication Critical patent/AU2001275334A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)

Abstract

A memory device comprising: a memory array comprising primary memory cells; at least one primary row wordline for accessing a row of said primary memory cells, said at least one primary row wordline being divided into a plurality of segments, each of which accesses a respective portion of said row of said primary memory cells; at least one row of redundant memory cells; at least one redundant row wordline for accessing said redundant memory cells, said at least one redundant row wordline being divided into a plurality of segments, each of which accesses a portion of said redundant memory cells; and a programmable logic circuit which can be selectively programmed to replace at least one of said primary row wordline segments associated with a defective memory cell with a redundant row wordline segment during memory access operation.
AU2001275334A 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair Abandoned AU2001275334A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09594442 2000-06-14
US09/594,442 US6314030B1 (en) 2000-06-14 2000-06-14 Semiconductor memory having segmented row repair
PCT/US2001/018388 WO2001097226A2 (en) 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair

Publications (1)

Publication Number Publication Date
AU2001275334A1 true AU2001275334A1 (en) 2001-12-24

Family

ID=24378869

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001275334A Abandoned AU2001275334A1 (en) 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair

Country Status (10)

Country Link
US (2) US6314030B1 (en)
EP (2) EP2058820A1 (en)
JP (1) JP2004503897A (en)
KR (1) KR100595813B1 (en)
CN (2) CN101471140A (en)
AT (1) ATE428175T1 (en)
AU (1) AU2001275334A1 (en)
DE (1) DE60138283D1 (en)
ES (1) ES2325056T3 (en)
WO (1) WO2001097226A2 (en)

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US6687171B2 (en) * 2002-04-26 2004-02-03 Infineon Technologies Aktiengesellschaft Flexible redundancy for memories
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US6807114B2 (en) * 2003-01-17 2004-10-19 Micron Technology, Inc. Method and system for selecting redundant rows and columns of memory cells
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US6868019B2 (en) * 2003-07-02 2005-03-15 Micron Technology, Inc. Reduced power redundancy address decoder and comparison circuit
US6992937B2 (en) * 2003-07-28 2006-01-31 Silicon Storage Technology, Inc. Column redundancy for digital multilevel nonvolatile memory
US7061815B2 (en) * 2003-08-05 2006-06-13 Stmicroelectronics Pvt. Ltd. Semiconductor memory device providing redundancy
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US20080291760A1 (en) * 2007-05-23 2008-11-27 Micron Technology, Inc. Sub-array architecture memory devices and related systems and methods
US7885128B2 (en) 2008-10-21 2011-02-08 Micron Technology, Inc. Redundant memory array for replacing memory sections of main memory
US8331126B2 (en) 2010-06-28 2012-12-11 Qualcomm Incorporated Non-volatile memory with split write and read bitlines
CN102456414B (en) * 2010-10-20 2014-11-26 旺宏电子股份有限公司 Memory storage with backup row and restoration method thereof
CN105513647A (en) * 2011-12-23 2016-04-20 英特尔公司 Self-repair logic for stacked storage device structure
JP6083576B2 (en) 2011-12-23 2017-02-22 インテル・コーポレーション Memory device, method and system
TWI497517B (en) * 2012-11-02 2015-08-21 Elite Semiconductor Esmt Repairing circuit for memory circuit and method thereof and memory circuit using the same
CN105378848B (en) * 2013-04-24 2018-10-02 慧与发展有限责任合伙企业 A kind of memory devices and a kind of method
KR102204390B1 (en) 2014-09-12 2021-01-18 삼성전자주식회사 Memory device with fast fail cell repair
KR20160120006A (en) * 2015-04-07 2016-10-17 에스케이하이닉스 주식회사 Semiconductor memory device
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11177010B1 (en) 2020-07-13 2021-11-16 Qualcomm Incorporated Bitcell for data redundancy
US11114181B1 (en) * 2020-08-03 2021-09-07 Micron Technology, Inc. Memory devices with redundant memory cells for replacing defective memory cells, and related systems and methods

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Also Published As

Publication number Publication date
CN101471140A (en) 2009-07-01
JP2004503897A (en) 2004-02-05
US6442084B2 (en) 2002-08-27
US20010053101A1 (en) 2001-12-20
ES2325056T3 (en) 2009-08-25
WO2001097226A2 (en) 2001-12-20
EP2058820A1 (en) 2009-05-13
CN1636260A (en) 2005-07-06
KR20030009526A (en) 2003-01-29
EP1292952B1 (en) 2009-04-08
EP1292952A2 (en) 2003-03-19
US6314030B1 (en) 2001-11-06
WO2001097226A3 (en) 2002-05-10
EP1292952B8 (en) 2009-08-05
KR100595813B1 (en) 2006-07-03
DE60138283D1 (en) 2009-05-20
ATE428175T1 (en) 2009-04-15
CN100442434C (en) 2008-12-10

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