AU2001267039A1 - Methods for forming rough ruthenium-containing layers and structures/methods using same - Google Patents

Methods for forming rough ruthenium-containing layers and structures/methods using same

Info

Publication number
AU2001267039A1
AU2001267039A1 AU2001267039A AU6703901A AU2001267039A1 AU 2001267039 A1 AU2001267039 A1 AU 2001267039A1 AU 2001267039 A AU2001267039 A AU 2001267039A AU 6703901 A AU6703901 A AU 6703901A AU 2001267039 A1 AU2001267039 A1 AU 2001267039A1
Authority
AU
Australia
Prior art keywords
methods
structures
same
containing layers
forming rough
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001267039A
Inventor
Vishnu K. Agarwal
Garo Derderian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001267039A1 publication Critical patent/AU2001267039A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
AU2001267039A 2000-06-08 2001-06-07 Methods for forming rough ruthenium-containing layers and structures/methods using same Abandoned AU2001267039A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09589849 2000-06-08
US09/589,849 US6429127B1 (en) 2000-06-08 2000-06-08 Methods for forming rough ruthenium-containing layers and structures/methods using same
PCT/US2001/040867 WO2001095376A2 (en) 2000-06-08 2001-06-07 Methods for forming rough ruthenium-containing layers and structures/methods using same

Publications (1)

Publication Number Publication Date
AU2001267039A1 true AU2001267039A1 (en) 2001-12-17

Family

ID=24359811

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001267039A Abandoned AU2001267039A1 (en) 2000-06-08 2001-06-07 Methods for forming rough ruthenium-containing layers and structures/methods using same

Country Status (6)

Country Link
US (4) US6429127B1 (en)
EP (1) EP1292992A2 (en)
JP (1) JP2003535978A (en)
KR (1) KR100644454B1 (en)
AU (1) AU2001267039A1 (en)
WO (1) WO2001095376A2 (en)

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Also Published As

Publication number Publication date
US20020058415A1 (en) 2002-05-16
KR100644454B1 (en) 2006-11-10
US6429127B1 (en) 2002-08-06
US20050208741A1 (en) 2005-09-22
US20020058414A1 (en) 2002-05-16
US6784504B2 (en) 2004-08-31
KR20030010674A (en) 2003-02-05
WO2001095376A3 (en) 2002-06-27
JP2003535978A (en) 2003-12-02
EP1292992A2 (en) 2003-03-19
US6897160B2 (en) 2005-05-24
US7144810B2 (en) 2006-12-05
WO2001095376A2 (en) 2001-12-13

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