AU2001262915A1 - High sensitivity infrared sensing apparatus and related method thereof - Google Patents

High sensitivity infrared sensing apparatus and related method thereof

Info

Publication number
AU2001262915A1
AU2001262915A1 AU2001262915A AU6291501A AU2001262915A1 AU 2001262915 A1 AU2001262915 A1 AU 2001262915A1 AU 2001262915 A AU2001262915 A AU 2001262915A AU 6291501 A AU6291501 A AU 6291501A AU 2001262915 A1 AU2001262915 A1 AU 2001262915A1
Authority
AU
Australia
Prior art keywords
high sensitivity
sensing apparatus
infrared sensing
related method
sensitivity infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001262915A
Inventor
Travis N. Blalock
Michael L. Reed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Virginia Patent Foundation
Original Assignee
University of Virginia UVA
University of Virginia Patent Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Virginia UVA, University of Virginia Patent Foundation filed Critical University of Virginia UVA
Publication of AU2001262915A1 publication Critical patent/AU2001262915A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AU2001262915A 2000-02-24 2001-02-26 High sensitivity infrared sensing apparatus and related method thereof Abandoned AU2001262915A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18455300P 2000-02-24 2000-02-24
US60184553 2000-02-24
PCT/US2001/006099 WO2001063232A1 (en) 2000-02-24 2001-02-26 High sensitivity infrared sensing apparatus and related method thereof

Publications (1)

Publication Number Publication Date
AU2001262915A1 true AU2001262915A1 (en) 2001-09-03

Family

ID=22677378

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001262915A Abandoned AU2001262915A1 (en) 2000-02-24 2001-02-26 High sensitivity infrared sensing apparatus and related method thereof

Country Status (3)

Country Link
US (1) US6900440B2 (en)
AU (1) AU2001262915A1 (en)
WO (1) WO2001063232A1 (en)

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US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
WO1999052006A2 (en) 1998-04-08 1999-10-14 Etalon, Inc. Interferometric modulation of radiation
US6897892B2 (en) 2000-10-13 2005-05-24 Alexander L. Kormos System and method for forming images for display in a vehicle
US6731435B1 (en) 2001-08-15 2004-05-04 Raytheon Company Method and apparatus for displaying information with a head-up display
US6789901B1 (en) 2002-01-04 2004-09-14 Raytheon Company System and method for providing images for an operator of a vehicle
US6808274B2 (en) 2002-06-04 2004-10-26 Raytheon Company Method and system for deploying a mirror assembly from a recessed position
US6815680B2 (en) * 2002-06-05 2004-11-09 Raytheon Company Method and system for displaying an image
TWI455509B (en) * 2002-08-07 2014-10-01 Intel Corp Channel switching for support of multimedia broadcast and multicast services
JP3944465B2 (en) * 2003-04-11 2007-07-11 三菱電機株式会社 Thermal infrared detector and infrared focal plane array
US7447891B2 (en) * 2003-04-30 2008-11-04 Hewlett-Packard Development Company, L.P. Light modulator with concentric control-electrode structure
US20050030628A1 (en) * 2003-06-20 2005-02-10 Aegis Semiconductor Very low cost narrow band infrared sensor
US20050082480A1 (en) * 2003-08-26 2005-04-21 Aegis Semiconductor, Inc. Infrared camera system
US7221827B2 (en) * 2003-09-08 2007-05-22 Aegis Semiconductor, Inc. Tunable dispersion compensator
KR20070003766A (en) * 2003-10-07 2007-01-05 이지스 세미컨덕터 인코포레이티드 Tuneable optical filter with heater on a cte-matched transparent substrate
FR2863357B1 (en) * 2003-12-08 2006-05-05 Commissariat Energie Atomique RADIANT ENERGY MEASURING DEVICE IMPROVED AT TWO POSITIONS
US7808703B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. System and method for implementation of interferometric modulator displays
US7920135B2 (en) 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
US7583429B2 (en) 2004-09-27 2009-09-01 Idc, Llc Ornamental display device
US7653371B2 (en) 2004-09-27 2010-01-26 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
KR100584424B1 (en) * 2004-11-04 2006-05-26 삼성전자주식회사 Optical image stabilizer for camera lens assembly
US7442933B2 (en) 2005-02-03 2008-10-28 Lin Alice L Bolometer having an amorphous titanium oxide layer with high resistance stability
US7388413B1 (en) 2005-07-14 2008-06-17 Microsemi Corporation Ramp generator with fast reset
US7733553B2 (en) * 2005-09-21 2010-06-08 Hewlett-Packard Development Company, L.P. Light modulator with tunable optical state
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7903047B2 (en) 2006-04-17 2011-03-08 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
WO2008108784A2 (en) * 2006-05-23 2008-09-12 Regents Of The Uninersity Of Minnesota Tunable finesse infrared cavity thermal detectors
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
US7303997B1 (en) * 2006-10-10 2007-12-04 Her Majesty The Queen In Right Of Canada As Represented By The Minister Of National Defence Of Her Majesty's Canadian Government Regionally thinned microstructures for microbolometers
US7800066B2 (en) * 2006-12-08 2010-09-21 Regents of the University of Minnesota Office for Technology Commercialization Detection beyond the standard radiation noise limit using reduced emissivity and optical cavity coupling
US7391242B1 (en) 2007-04-07 2008-06-24 Ball Newton E Sawtooth waveform generator
US7851759B2 (en) * 2007-06-21 2010-12-14 Alcatel-Lucent Usa Inc. Infrared imaging apparatus
US7622717B2 (en) * 2007-08-22 2009-11-24 Drs Sensors & Targeting Systems, Inc. Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption
US8143577B2 (en) 2007-09-28 2012-03-27 Shanghai Juge Electronics Technologies Co. Ltd. Infrared sensors, focal plane arrays and thermal imaging systems
US7750301B1 (en) 2007-10-02 2010-07-06 Flir Systems, Inc. Microbolometer optical cavity tuning and calibration systems and methods
JP4978501B2 (en) * 2008-02-14 2012-07-18 日本電気株式会社 Thermal infrared detector and method for manufacturing the same
US8629398B2 (en) 2008-05-30 2014-01-14 The Regents Of The University Of Minnesota Detection beyond the standard radiation noise limit using spectrally selective absorption
US7842923B2 (en) * 2008-07-28 2010-11-30 Alcatel-Lucent Usa Inc. Thermal actuator for an infrared sensor
JP5428783B2 (en) * 2009-11-12 2014-02-26 日本電気株式会社 Bolometer type THz wave detector
KR101922119B1 (en) * 2011-12-22 2019-02-14 삼성전자주식회사 Infrared detector and method for detecting infrared using the same
US20140042324A1 (en) * 2012-08-08 2014-02-13 Agency For Science, Technology And Research Detector and method of controlling the same
US9297700B2 (en) * 2012-12-03 2016-03-29 Analog Devices, Inc. Photonic sensor and a method of manufacturing such a sensor

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US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5340984A (en) * 1992-05-19 1994-08-23 Skw Corporation Non-contact interconnect for focal plane arrays
US5627112A (en) * 1995-11-13 1997-05-06 Rockwell International Corporation Method of making suspended microstructures
EP0865672B1 (en) * 1995-12-04 2000-08-30 Lockheed-Martin IR Imaging Systems Infrared radiation detector having a reduced active area
FR2752299B1 (en) * 1996-08-08 1998-09-11 Commissariat Energie Atomique INFRARED DETECTOR AND MANUFACTURING METHOD THEREOF
US5962909A (en) * 1996-09-12 1999-10-05 Institut National D'optique Microstructure suspended by a microsupport
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US6198098B1 (en) * 1998-05-26 2001-03-06 Philips Laou Microstructure for infrared detector and method of making same
US6329655B1 (en) * 1998-10-07 2001-12-11 Raytheon Company Architecture and method of coupling electromagnetic energy to thermal detectors
US6576904B1 (en) * 1999-11-10 2003-06-10 Itt Manufacturing Enterprises, Inc. Transition edge detector technology for high performance IR focal plane arrays

Also Published As

Publication number Publication date
US6900440B2 (en) 2005-05-31
US20030141453A1 (en) 2003-07-31
WO2001063232A1 (en) 2001-08-30

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