AU2001257191A1 - Optical reduction system with elimination of reticle diffraction induced bias - Google Patents

Optical reduction system with elimination of reticle diffraction induced bias

Info

Publication number
AU2001257191A1
AU2001257191A1 AU2001257191A AU5719101A AU2001257191A1 AU 2001257191 A1 AU2001257191 A1 AU 2001257191A1 AU 2001257191 A AU2001257191 A AU 2001257191A AU 5719101 A AU5719101 A AU 5719101A AU 2001257191 A1 AU2001257191 A1 AU 2001257191A1
Authority
AU
Australia
Prior art keywords
elimination
reduction system
optical reduction
induced bias
diffraction induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001257191A
Inventor
Justin L. Kreuzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML US Inc filed Critical ASML US Inc
Publication of AU2001257191A1 publication Critical patent/AU2001257191A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2001257191A 2000-04-25 2001-04-25 Optical reduction system with elimination of reticle diffraction induced bias Abandoned AU2001257191A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19939200P 2000-04-25 2000-04-25
US60199392 2000-04-25
PCT/US2001/013139 WO2001082000A1 (en) 2000-04-25 2001-04-25 Optical reduction system with elimination of reticle diffraction induced bias

Publications (1)

Publication Number Publication Date
AU2001257191A1 true AU2001257191A1 (en) 2001-11-07

Family

ID=22737313

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001257191A Abandoned AU2001257191A1 (en) 2000-04-25 2001-04-25 Optical reduction system with elimination of reticle diffraction induced bias

Country Status (6)

Country Link
US (3) US6522483B2 (en)
EP (1) EP1277088A1 (en)
JP (1) JP2003532282A (en)
KR (1) KR100783669B1 (en)
AU (1) AU2001257191A1 (en)
WO (1) WO2001082000A1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798579B2 (en) * 1999-04-27 2004-09-28 Optical Products Development Corp. Real imaging system with reduced ghost imaging
US6935747B2 (en) * 1999-04-27 2005-08-30 Optical Products Development Image enhancement and aberration corrections in a small real image projection system
KR100783669B1 (en) * 2000-04-25 2007-12-07 에이에스엠엘 유에스, 인크. Optical Reduction System With Elimination of Reticle Diffraction Induced Bias
US20030035086A1 (en) * 2001-08-20 2003-02-20 Robinson Douglas L. Real image projection device incorporating e-mail register
TW575904B (en) * 2001-08-21 2004-02-11 Asml Us Inc Optical projection for microlithography
US20050190446A1 (en) * 2002-06-25 2005-09-01 Carl Zeiss Amt Ag Catadioptric reduction objective
US6731374B1 (en) * 2002-12-02 2004-05-04 Asml Holding N.V. Beam-splitter optics design that maintains an unflipped (unmirrored) image for a catadioptric lithographic system
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
EP1857880B1 (en) * 2003-04-09 2015-09-16 Nikon Corporation Exposure method and apparatus and device manufacturing method
TW201834020A (en) 2003-10-28 2018-09-16 日商尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
JP2005150290A (en) * 2003-11-13 2005-06-09 Canon Inc Exposure apparatus and method of manufacturing device
TWI519819B (en) 2003-11-20 2016-02-01 尼康股份有限公司 Light beam converter, optical illuminating apparatus, exposure device, and exposure method
US7463422B2 (en) * 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
TWI511182B (en) 2004-02-06 2015-12-01 尼康股份有限公司 Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method
DE102004031688B4 (en) * 2004-06-30 2006-06-14 Infineon Technologies Ag Method for adapting structural dimensions in the photolithographic projection of a pattern of structural elements onto a semiconductor wafer
US7271874B2 (en) * 2004-11-02 2007-09-18 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101455551B1 (en) 2005-05-12 2014-10-27 가부시키가이샤 니콘 Projection optical system, exposure apparatus and exposure method
WO2007051574A1 (en) * 2005-11-03 2007-05-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
US20070264581A1 (en) * 2006-05-09 2007-11-15 Schwarz Christian J Patterning masks and methods
DE102006022958A1 (en) * 2006-05-11 2007-11-22 Carl Zeiss Smt Ag Projection exposure apparatus, projection exposure method and use of a projection lens
US7799486B2 (en) * 2006-11-21 2010-09-21 Infineon Technologies Ag Lithography masks and methods of manufacture thereof
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953960A (en) 1988-07-15 1990-09-04 Williamson David M Optical reduction system
JP2698521B2 (en) 1992-12-14 1998-01-19 キヤノン株式会社 Catadioptric optical system and projection exposure apparatus having the optical system
US5537260A (en) * 1993-01-26 1996-07-16 Svg Lithography Systems, Inc. Catadioptric optical reduction system with high numerical aperture
US5442184A (en) 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
US5539567A (en) * 1994-06-16 1996-07-23 Texas Instruments Incorporated Photolithographic technique and illuminator using real-time addressable phase shift light shift
DE19535392A1 (en) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarization-rotating optical arrangement and microlithography projection exposure system with it
US6157498A (en) * 1996-06-19 2000-12-05 Nikon Corporation Dual-imaging optical system
EP0823662A2 (en) * 1996-08-07 1998-02-11 Nikon Corporation Projection exposure apparatus
JP3790833B2 (en) * 1996-08-07 2006-06-28 株式会社ニコン Projection exposure method and apparatus
JP3812051B2 (en) * 1997-04-30 2006-08-23 株式会社ニコン Catadioptric projection optical system
JPH11326767A (en) * 1998-05-07 1999-11-26 Nikon Corp Cata-dioptric reduction system
EP1293831A1 (en) * 1998-06-08 2003-03-19 Nikon Corporation Projection exposure apparatus and method
US6680798B2 (en) * 2000-04-25 2004-01-20 Asml Holding N.V. Optical reduction system with control of illumination polarization
KR100783669B1 (en) * 2000-04-25 2007-12-07 에이에스엠엘 유에스, 인크. Optical Reduction System With Elimination of Reticle Diffraction Induced Bias

Also Published As

Publication number Publication date
US6522483B2 (en) 2003-02-18
KR20020060578A (en) 2002-07-18
US20030223126A1 (en) 2003-12-04
US7031077B2 (en) 2006-04-18
WO2001082000A1 (en) 2001-11-01
US20020027718A1 (en) 2002-03-07
KR100783669B1 (en) 2007-12-07
JP2003532282A (en) 2003-10-28
US20050094289A1 (en) 2005-05-05
EP1277088A1 (en) 2003-01-22
US6836380B2 (en) 2004-12-28

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