AU2001247668A1 - Method and apparatus for increased workpiece throughput - Google Patents
Method and apparatus for increased workpiece throughputInfo
- Publication number
- AU2001247668A1 AU2001247668A1 AU2001247668A AU4766801A AU2001247668A1 AU 2001247668 A1 AU2001247668 A1 AU 2001247668A1 AU 2001247668 A AU2001247668 A AU 2001247668A AU 4766801 A AU4766801 A AU 4766801A AU 2001247668 A1 AU2001247668 A1 AU 2001247668A1
- Authority
- AU
- Australia
- Prior art keywords
- workpiece throughput
- increased workpiece
- increased
- throughput
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19422700P | 2000-04-03 | 2000-04-03 | |
US60194227 | 2000-04-03 | ||
US09/749,648 US6409932B2 (en) | 2000-04-03 | 2000-12-27 | Method and apparatus for increased workpiece throughput |
US09749648 | 2000-12-27 | ||
PCT/US2001/009134 WO2001075939A2 (en) | 2000-04-03 | 2001-03-22 | Method and apparatus for increased workpiece throughput |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001247668A1 true AU2001247668A1 (en) | 2001-10-15 |
Family
ID=26889808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001247668A Abandoned AU2001247668A1 (en) | 2000-04-03 | 2001-03-22 | Method and apparatus for increased workpiece throughput |
Country Status (3)
Country | Link |
---|---|
US (3) | US6409932B2 (en) |
AU (1) | AU2001247668A1 (en) |
WO (1) | WO2001075939A2 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7231141B2 (en) | 2001-04-23 | 2007-06-12 | Asm America, Inc. | High temperature drop-off of a substrate |
JP2003031639A (en) * | 2001-07-17 | 2003-01-31 | Canon Inc | Substrate processor, carrying method of substrate and aligner |
JP2003045947A (en) * | 2001-07-27 | 2003-02-14 | Canon Inc | Substrate processing apparatus and aligner |
JP3602506B2 (en) * | 2002-02-01 | 2004-12-15 | 株式会社協真エンジニアリング | Pressure heating drying method and pressure heating drying apparatus |
KR100379210B1 (en) * | 2002-04-19 | 2003-04-08 | 피.에스.케이.테크(주) | Method for Semiconductor Wafer Ashing |
US20040040509A1 (en) * | 2002-09-04 | 2004-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for preventing etchant condensation on wafer in a cooling chamber |
WO2004025710A2 (en) * | 2002-09-10 | 2004-03-25 | Axcelis Technologies, Inc. | Method of heating a substrate in a variable temperature process using a fixed temperature chuck |
KR20060038925A (en) * | 2003-05-07 | 2006-05-04 | 액셀리스 테크놀러지스, 인크. | Wide temperature range chuck system |
US7799685B2 (en) * | 2003-10-13 | 2010-09-21 | Mattson Technology, Inc. | System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing |
US20050205210A1 (en) * | 2004-01-06 | 2005-09-22 | Devine Daniel J | Advanced multi-pressure workpiece processing |
WO2005072211A2 (en) * | 2004-01-20 | 2005-08-11 | Mattson Technology, Inc. | System and method for removal of photoresist and residues following contact etch with a stop layer present |
US20050279453A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | System and methods for surface cleaning |
US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US8475624B2 (en) * | 2005-09-27 | 2013-07-02 | Lam Research Corporation | Method and system for distributing gas for a bevel edge etcher |
CN100343952C (en) * | 2005-12-05 | 2007-10-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon chip unloading technology capable of raising production volume and reducing silicon chip surface roughness |
US7737010B2 (en) * | 2006-04-14 | 2010-06-15 | Micron Technology, Inc. | Method of photoresist strip for plasma doping process of semiconductor manufacturing |
US7968401B2 (en) * | 2009-01-26 | 2011-06-28 | Applied Materials, Inc. | Reducing photoresist layer degradation in plasma immersion ion implantation |
US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
US9613825B2 (en) * | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
US10535566B2 (en) * | 2016-04-28 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
US20230207291A1 (en) * | 2021-12-29 | 2023-06-29 | Applied Materials, Inc. | Dual pressure oxidation method for forming an oxide layer in a feature |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US438A (en) * | 1837-10-23 | Improvement in the composition of matter to be used as paint for houses | ||
US535A (en) * | 1837-12-29 | Safety railroad-gar | ||
JPH0770524B2 (en) * | 1987-08-19 | 1995-07-31 | 富士通株式会社 | Method for manufacturing semiconductor device |
US5968379A (en) * | 1995-07-14 | 1999-10-19 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability and related methods |
US5965034A (en) * | 1995-12-04 | 1999-10-12 | Mc Electronics Co., Ltd. | High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
US5993916A (en) * | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
US5968374A (en) * | 1997-03-20 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber |
EP0940846A1 (en) * | 1998-03-06 | 1999-09-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for stripping ion implanted photoresist layer |
US6200911B1 (en) * | 1998-04-21 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power |
US6130169A (en) * | 1999-05-21 | 2000-10-10 | Advanced Micro Devices, Inc. | Efficient in-situ resist strip process for heavy polymer metal etch |
US6524936B2 (en) | 2000-12-22 | 2003-02-25 | Axcelis Technologies, Inc. | Process for removal of photoresist after post ion implantation |
-
2000
- 2000-12-27 US US09/749,648 patent/US6409932B2/en not_active Expired - Lifetime
-
2001
- 2001-03-22 AU AU2001247668A patent/AU2001247668A1/en not_active Abandoned
- 2001-03-22 WO PCT/US2001/009134 patent/WO2001075939A2/en active Application Filing
-
2002
- 2002-06-10 US US10/170,621 patent/US6605226B2/en not_active Expired - Lifetime
- 2002-06-10 US US10/167,937 patent/US6736927B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020151184A1 (en) | 2002-10-17 |
US20020153099A1 (en) | 2002-10-24 |
US20010047979A1 (en) | 2001-12-06 |
US6736927B2 (en) | 2004-05-18 |
WO2001075939A2 (en) | 2001-10-11 |
US6605226B2 (en) | 2003-08-12 |
US6409932B2 (en) | 2002-06-25 |
WO2001075939A3 (en) | 2002-02-28 |
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