AU2001245659A1 - Pyrazolate copper complexes, and mocvd of copper using same - Google Patents

Pyrazolate copper complexes, and mocvd of copper using same

Info

Publication number
AU2001245659A1
AU2001245659A1 AU2001245659A AU4565901A AU2001245659A1 AU 2001245659 A1 AU2001245659 A1 AU 2001245659A1 AU 2001245659 A AU2001245659 A AU 2001245659A AU 4565901 A AU4565901 A AU 4565901A AU 2001245659 A1 AU2001245659 A1 AU 2001245659A1
Authority
AU
Australia
Prior art keywords
copper
mocvd
same
pyrazolate
complexes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001245659A
Inventor
Thomas H. Baum
Ziyun Wang
Chong-Ying Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2001245659A1 publication Critical patent/AU2001245659A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2001245659A 2000-03-13 2001-03-12 Pyrazolate copper complexes, and mocvd of copper using same Abandoned AU2001245659A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/524,063 US6417369B1 (en) 2000-03-13 2000-03-13 Pyrazolate copper complexes, and MOCVD of copper using same
US09524063 2000-03-13
PCT/US2001/007938 WO2001068948A1 (en) 2000-03-13 2001-03-12 Pyrazolate copper complexes, and mocvd of copper using same

Publications (1)

Publication Number Publication Date
AU2001245659A1 true AU2001245659A1 (en) 2001-09-24

Family

ID=24087604

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001245659A Abandoned AU2001245659A1 (en) 2000-03-13 2001-03-12 Pyrazolate copper complexes, and mocvd of copper using same

Country Status (4)

Country Link
US (3) US6417369B1 (en)
AU (1) AU2001245659A1 (en)
TW (1) TW483952B (en)
WO (1) WO2001068948A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417369B1 (en) * 2000-03-13 2002-07-09 Advanced Technology Materials, Inc. Pyrazolate copper complexes, and MOCVD of copper using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
EP1336985A1 (en) 2002-02-19 2003-08-20 Singulus Technologies AG Sputtering cathode, and device and method for coating a substrate with a plurality of layers
US6740586B1 (en) * 2002-11-06 2004-05-25 Advanced Technology Materials, Inc. Vapor delivery system for solid precursors and method of using same
KR102220703B1 (en) 2002-11-15 2021-02-26 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 Atomic Layer Deposition Using Metal Amidinates
WO2009105668A1 (en) 2008-02-20 2009-08-27 President And Fellows Of Harvard College Bicyclic guanidines, metal complexes thereof and their use in vapor deposition
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
FR2881743B1 (en) * 2005-02-09 2007-04-13 Eastman Kodak Co METAL PYRAZOLATE COMPLEX AND PROCESS FOR PREPARING SUCH COMPLEX
FR2881656B1 (en) * 2005-02-09 2007-04-13 Eastman Kodak Co METHOD FOR CONTROLLING MICROBIAL GROWTH
US20090162550A1 (en) * 2006-06-02 2009-06-25 Advanced Technology Materials, Inc. Copper (i) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US20080241377A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Vapor deposition system and method of operating
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
US20210387134A1 (en) * 2018-10-15 2021-12-16 Board Of Regents, The University Of Texas System Solid-state copper(i) sorbents for olefin separations
TW202132605A (en) * 2020-01-10 2021-09-01 美商應用材料股份有限公司 Catalyst enhanced seamless ruthenium gap fill

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5820664A (en) 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5453494A (en) 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5362328A (en) 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5225561A (en) 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5711816A (en) 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5280012A (en) 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5098516A (en) 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
US5144049A (en) 1991-02-04 1992-09-01 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5085731A (en) 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5322712A (en) 1993-05-18 1994-06-21 Air Products And Chemicals, Inc. Process for improved quality of CVD copper films
US5919522A (en) 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
US5932363A (en) * 1997-10-02 1999-08-03 Xerox Corporation Electroluminescent devices
US6337148B1 (en) * 1999-05-25 2002-01-08 Advanced Technology Materials, Inc. Copper source reagent compositions, and method of making and using same for microelectronic device structures
US6417369B1 (en) * 2000-03-13 2002-07-09 Advanced Technology Materials, Inc. Pyrazolate copper complexes, and MOCVD of copper using same

Also Published As

Publication number Publication date
WO2001068948A1 (en) 2001-09-20
US20020042518A1 (en) 2002-04-11
US6639080B2 (en) 2003-10-28
US6417369B1 (en) 2002-07-09
US6440202B1 (en) 2002-08-27
US20020091268A1 (en) 2002-07-11
TW483952B (en) 2002-04-21

Similar Documents

Publication Publication Date Title
AU2002359373A1 (en) Alkene-platinum-silyl complexes
AU2001245659A1 (en) Pyrazolate copper complexes, and mocvd of copper using same
EP1209986B8 (en) Metal-containing compositions, preparations and uses
AU2001236021A1 (en) Telephone terminal
AU2001261428A1 (en) Network-based software extensions
AU2002219418A1 (en) Compositions of estrogen-cyclodextrin complexes
AU2001253666A1 (en) Distributed rendering
AU2002318391A1 (en) Intermodulation product cancellation circuit
AU2002360607A1 (en) 1-100GHz MICROSTRIP FILTER
AU2002345353A1 (en) Methods and compositions that affect melanogenesis (pfi-016cip/pct)
AU2002347027A1 (en) Terminal block
AU2002236458A1 (en) Texaphyrin coordination compounds and uses thereof
AU4430601A (en) Computer telephony integration
AU2001232080A1 (en) Compound, compositions and use
AU2001257613A1 (en) Compositions comprising carriers and transportable complexes
AU2002316617A1 (en) Anticancer polypeptide-metal complexes and compositions, methods of making, and methods of using same
AU2001252007A1 (en) Socket-outlet
AU2001255125A1 (en) Gold complexes
AU2002355846A1 (en) Immune complexes
AU2002215851A1 (en) Electrical component
AU2002222387A1 (en) Cyclodextrin-drospirenone inclusion complexes
AU2001255380A1 (en) Human interferon, zinf2
AU2002310928A1 (en) Palladium-complexes based on pyrroline-metal complexes
AU2001278758A1 (en) Ligands
AUPR166700A0 (en) Terminal block