AU2001239960A1 - Method for producing desired tantalum phase - Google Patents

Method for producing desired tantalum phase

Info

Publication number
AU2001239960A1
AU2001239960A1 AU2001239960A AU3996001A AU2001239960A1 AU 2001239960 A1 AU2001239960 A1 AU 2001239960A1 AU 2001239960 A AU2001239960 A AU 2001239960A AU 3996001 A AU3996001 A AU 3996001A AU 2001239960 A1 AU2001239960 A1 AU 2001239960A1
Authority
AU
Australia
Prior art keywords
producing desired
tantalum phase
desired tantalum
phase
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001239960A
Inventor
Charles Spencer Whitman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lexmark International Inc
Original Assignee
Lexmark International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lexmark International Inc filed Critical Lexmark International Inc
Publication of AU2001239960A1 publication Critical patent/AU2001239960A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1601—Production of bubble jet print heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B41J2/1628—Manufacturing processes etching dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/03—Specific materials used
AU2001239960A 2000-02-29 2001-02-28 Method for producing desired tantalum phase Abandoned AU2001239960A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09515840 2000-02-29
US09/515,840 US6395148B1 (en) 1998-11-06 2000-02-29 Method for producing desired tantalum phase
PCT/US2001/006504 WO2001064443A1 (en) 2000-02-29 2001-02-28 Method for producing desired tantalum phase

Publications (1)

Publication Number Publication Date
AU2001239960A1 true AU2001239960A1 (en) 2001-09-12

Family

ID=24052978

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001239960A Abandoned AU2001239960A1 (en) 2000-02-29 2001-02-28 Method for producing desired tantalum phase

Country Status (8)

Country Link
US (1) US6395148B1 (en)
EP (1) EP1261488B1 (en)
JP (1) JP2003525149A (en)
KR (1) KR20020089368A (en)
CN (1) CN1418150A (en)
AU (1) AU2001239960A1 (en)
DE (1) DE60106398D1 (en)
WO (1) WO2001064443A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607264B1 (en) 2002-06-18 2003-08-19 Hewlett-Packard Development Company, L.P. Fluid controlling apparatus
US7565137B2 (en) * 2002-10-25 2009-07-21 At&T Mobility Ii Llc Delivery of network services
US7294241B2 (en) * 2003-01-03 2007-11-13 Chartered Semiconductor Manufacturing Ltd. Method to form alpha phase Ta and its application to IC manufacturing
US6926390B2 (en) * 2003-02-05 2005-08-09 Hewlett-Packard Development Company, L.P. Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same
US6855647B2 (en) * 2003-04-02 2005-02-15 Hewlett-Packard Development Company, L.P. Custom electrodes for molecular memory and logic devices
US6893116B2 (en) * 2003-04-29 2005-05-17 Hewlett-Packard Development Company, L.P. Fluid ejection device with compressive alpha-tantalum layer
US6955835B2 (en) * 2003-04-30 2005-10-18 Hewlett-Packard Development Company, L.P. Method for forming compressive alpha-tantalum on substrates and devices including the same
US7080896B2 (en) * 2004-01-20 2006-07-25 Lexmark International, Inc. Micro-fluid ejection device having high resistance heater film
EP1730072A2 (en) * 2004-03-24 2006-12-13 H.C. Starck Inc. Methods of forming alpha and beta tantalum films with controlled and new microstructures
US7616757B2 (en) * 2004-08-30 2009-11-10 Erdman Joseph L Scalable call center telecommunications system
KR100850648B1 (en) * 2007-01-03 2008-08-07 한국과학기술원 High Efficiency heater resistor containing a novel oxides based resistor system, head and apparatus of ejecting liquid, and substrate for head ejecting liquid
CN101920435B (en) * 2010-08-20 2012-01-11 宁夏东方钽业股份有限公司 Preparation process of sputtering tantalum ring
US8570706B2 (en) * 2010-08-23 2013-10-29 Nxp B.V. Tantalum-based electrode stack
US20120057270A1 (en) * 2010-09-06 2012-03-08 Juergen Foerster Capacitor and method for making same
JP6150519B2 (en) 2012-12-27 2017-06-21 キヤノン株式会社 INKJET RECORDING HEAD SUBSTRATE, INKJET RECORDING HEAD, INKJET RECORDING HEAD MANUFACTURING METHOD, INKJET RECORDING DEVICE, AND INKJET RECORDING HEAD SUBSTRATE
JP6520197B2 (en) * 2015-02-20 2019-05-29 富士通株式会社 Compound semiconductor device and method of manufacturing the same
CN111799372B (en) * 2020-05-15 2023-03-24 上海华力微电子有限公司 Method for forming RRAM resistive switching structure

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275915A (en) 1966-09-27 Beta tantalum thin-film capacitors
US3382053A (en) 1965-04-05 1968-05-07 Western Electric Co Tantalum films of unique structure
US3607679A (en) 1969-05-05 1971-09-21 Bell Telephone Labor Inc Method for the fabrication of discrete rc structure
US3641402A (en) 1969-12-30 1972-02-08 Ibm Semiconductor device with beta tantalum-gold composite conductor metallurgy
US4000055A (en) 1972-01-14 1976-12-28 Western Electric Company, Inc. Method of depositing nitrogen-doped beta tantalum
BE791139A (en) * 1972-01-14 1973-03-01 Western Electric Co PROCESS FOR THE DEPOSIT OF BETA-TANTALUM DOPED BY NITROGEN
DE2513858C3 (en) 1975-03-27 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Process for the production of a tantalum thin film capacitor
US4251326A (en) 1978-12-28 1981-02-17 Western Electric Company, Inc. Fabricating an RC network utilizing alpha tantalum
EP0024863B1 (en) 1979-08-31 1983-05-25 Fujitsu Limited A tantalum thin film capacitor and process for producing the same
US4632883A (en) 1985-04-22 1986-12-30 International Business Machines Corporation Vertical recording medium with improved perpendicular magnetic anisotropy due to influence of beta-tantalum underlayer
JPH0729431B2 (en) * 1986-03-04 1995-04-05 キヤノン株式会社 How to make a liquid jet recording head
JPH0729433B2 (en) * 1986-03-05 1995-04-05 キヤノン株式会社 How to make a liquid jet recording head
EP0570021B1 (en) * 1987-12-02 1997-03-19 Canon Kabushiki Kaisha Ink jet head, substrate therefor, process for preparing thereof and ink jet apparatus having said head
JPH03248568A (en) 1990-02-27 1991-11-06 Fuji Xerox Co Ltd Thin-film semiconductor device
US5063655A (en) * 1990-04-02 1991-11-12 International Business Machines Corp. Method to integrate drive/control devices and ink jet on demand devices in a single printhead chip
JPH0819516B2 (en) 1990-10-26 1996-02-28 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Method and structure for forming thin film alpha Ta
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
JP2740591B2 (en) 1991-02-08 1998-04-15 シャープ株式会社 Method for manufacturing semiconductor device
US6013160A (en) * 1997-11-21 2000-01-11 Xerox Corporation Method of making a printhead having reduced surface roughness
TW520551B (en) * 1998-09-24 2003-02-11 Applied Materials Inc Method for fabricating ultra-low resistivity tantalum films
US6142612A (en) * 1998-11-06 2000-11-07 Lexmark International, Inc. Controlled layer of tantalum for thermal ink jet printer

Also Published As

Publication number Publication date
EP1261488A4 (en) 2003-05-21
US6395148B1 (en) 2002-05-28
EP1261488A1 (en) 2002-12-04
KR20020089368A (en) 2002-11-29
EP1261488B1 (en) 2004-10-13
DE60106398D1 (en) 2004-11-18
CN1418150A (en) 2003-05-14
WO2001064443A1 (en) 2001-09-07
JP2003525149A (en) 2003-08-26

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