AU2001227824A1 - Ultra-low temperature effusion cell - Google Patents

Ultra-low temperature effusion cell

Info

Publication number
AU2001227824A1
AU2001227824A1 AU2001227824A AU2782401A AU2001227824A1 AU 2001227824 A1 AU2001227824 A1 AU 2001227824A1 AU 2001227824 A AU2001227824 A AU 2001227824A AU 2782401 A AU2782401 A AU 2782401A AU 2001227824 A1 AU2001227824 A1 AU 2001227824A1
Authority
AU
Australia
Prior art keywords
ultra
low temperature
effusion cell
temperature effusion
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001227824A
Inventor
Paul E. Colombo
Scott Wayne Priddy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied EPI Inc
Original Assignee
Applied EPI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied EPI Inc filed Critical Applied EPI Inc
Publication of AU2001227824A1 publication Critical patent/AU2001227824A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
AU2001227824A 2000-01-12 2001-01-11 Ultra-low temperature effusion cell Abandoned AU2001227824A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48163200A 2000-01-12 2000-01-12
US09481632 2000-01-12
PCT/US2001/000845 WO2001051160A1 (en) 2000-01-12 2001-01-11 Ultra-low temperature effusion cell

Publications (1)

Publication Number Publication Date
AU2001227824A1 true AU2001227824A1 (en) 2001-07-24

Family

ID=23912750

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001227824A Abandoned AU2001227824A1 (en) 2000-01-12 2001-01-11 Ultra-low temperature effusion cell

Country Status (2)

Country Link
AU (1) AU2001227824A1 (en)
WO (1) WO2001051160A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012064A (en) * 1990-06-29 1991-04-30 The Boc Group, Inc. Electron beam evaporation source
US5820681A (en) * 1995-05-03 1998-10-13 Chorus Corporation Unibody crucible and effusion cell employing such a crucible
US6162300A (en) * 1998-09-25 2000-12-19 Bichrt; Craig E. Effusion cell

Also Published As

Publication number Publication date
WO2001051160A1 (en) 2001-07-19

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