AU2001226100A1 - Method for high yield reticle formation - Google Patents
Method for high yield reticle formationInfo
- Publication number
- AU2001226100A1 AU2001226100A1 AU2001226100A AU2610001A AU2001226100A1 AU 2001226100 A1 AU2001226100 A1 AU 2001226100A1 AU 2001226100 A AU2001226100 A AU 2001226100A AU 2610001 A AU2610001 A AU 2610001A AU 2001226100 A1 AU2001226100 A1 AU 2001226100A1
- Authority
- AU
- Australia
- Prior art keywords
- high yield
- reticle formation
- reticle
- formation
- yield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/676,400 US6557162B1 (en) | 2000-09-29 | 2000-09-29 | Method for high yield reticle formation |
US09676400 | 2000-09-29 | ||
PCT/US2000/035653 WO2002029491A1 (en) | 2000-09-29 | 2000-12-30 | Method for high yield reticle formation |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001226100A1 true AU2001226100A1 (en) | 2002-04-15 |
Family
ID=24714351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001226100A Abandoned AU2001226100A1 (en) | 2000-09-29 | 2000-12-30 | Method for high yield reticle formation |
Country Status (6)
Country | Link |
---|---|
US (2) | US6557162B1 (en) |
EP (1) | EP1320784A1 (en) |
JP (1) | JP3957631B2 (en) |
KR (1) | KR100668192B1 (en) |
AU (1) | AU2001226100A1 (en) |
WO (1) | WO2002029491A1 (en) |
Families Citing this family (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6529621B1 (en) * | 1998-12-17 | 2003-03-04 | Kla-Tencor | Mechanisms for making and inspecting reticles |
US6557162B1 (en) | 2000-09-29 | 2003-04-29 | Numerical Technologies, Inc. | Method for high yield reticle formation |
US6505327B2 (en) | 2001-04-13 | 2003-01-07 | Numerical Technologies, Inc. | Generating an instance-based representation of a design hierarchy |
JP4451575B2 (en) * | 2001-05-22 | 2010-04-14 | パナソニック株式会社 | WIRING BOARD DESIGN SUPPORT DEVICE, DESIGN SUPPORT METHOD, PROGRAM RECORDING MEDIUM, AND PROGRAM |
US6721928B2 (en) | 2001-07-26 | 2004-04-13 | Numerical Technologies, Inc. | Verification utilizing instance-based hierarchy management |
US6560766B2 (en) | 2001-07-26 | 2003-05-06 | Numerical Technologies, Inc. | Method and apparatus for analyzing a layout using an instance-based representation |
US6738958B2 (en) | 2001-09-10 | 2004-05-18 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process composite gates |
US6735752B2 (en) | 2001-09-10 | 2004-05-11 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process features created by interactions between cells |
US7159197B2 (en) | 2001-12-31 | 2007-01-02 | Synopsys, Inc. | Shape-based geometry engine to perform smoothing and other layout beautification operations |
US6709879B2 (en) * | 2002-01-02 | 2004-03-23 | United Microelectronics Corporation | Method for inspecting a pattern defect process |
US7386433B2 (en) | 2002-03-15 | 2008-06-10 | Synopsys, Inc. | Using a suggested solution to speed up a process for simulating and correcting an integrated circuit layout |
US6687895B2 (en) | 2002-07-03 | 2004-02-03 | Numerical Technologies Inc. | Method and apparatus for reducing optical proximity correction output file size |
EP1543451A4 (en) * | 2002-07-12 | 2010-11-17 | Cadence Design Systems Inc | Method and system for context-specific mask writing |
US6792592B2 (en) | 2002-08-30 | 2004-09-14 | Numerical Technologies, Inc. | Considering mask writer properties during the optical proximity correction process |
US7005215B2 (en) | 2002-10-28 | 2006-02-28 | Synopsys, Inc. | Mask repair using multiple exposures |
US6996790B2 (en) * | 2003-01-30 | 2006-02-07 | Synopsys, Inc. | System and method for generating a two-dimensional yield map for a full layout |
US7149999B2 (en) * | 2003-02-25 | 2006-12-12 | The Regents Of The University Of California | Method for correcting a mask design layout |
JP4040515B2 (en) | 2003-03-26 | 2008-01-30 | 株式会社東芝 | Mask setting, mask data creating method and pattern forming method |
US9002497B2 (en) * | 2003-07-03 | 2015-04-07 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of wafers and reticles using designer intent data |
JP4068541B2 (en) * | 2003-09-25 | 2008-03-26 | 株式会社東芝 | Integrated circuit pattern verification apparatus and verification method |
US7315990B2 (en) | 2004-01-12 | 2008-01-01 | International Business Machines Corporation | Method and system for creating, viewing, editing, and sharing output from a design checking system |
US7568180B2 (en) * | 2004-02-26 | 2009-07-28 | Pdf Solutions | Generalization of the photo process window and its application to OPC test pattern design |
US7275226B2 (en) * | 2004-04-21 | 2007-09-25 | International Business Machines Corporation | Method of performing latch up check on an integrated circuit design |
US7117476B2 (en) * | 2004-06-04 | 2006-10-03 | Texas Instruments Incorporated | Determining feasibility of IC edits |
US7307001B2 (en) * | 2005-01-05 | 2007-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer repair method using direct-writing |
US7730432B1 (en) | 2005-03-30 | 2010-06-01 | Tela Innovations, Inc. | Method and system for reshaping a transistor gate in an integrated circuit to achieve a target objective |
US7441211B1 (en) * | 2005-05-06 | 2008-10-21 | Blaze Dfm, Inc. | Gate-length biasing for digital circuit optimization |
US8490043B2 (en) | 2005-05-06 | 2013-07-16 | Tela Innovations, Inc. | Standard cells having transistors annotated for gate-length biasing |
WO2007035166A2 (en) * | 2005-09-26 | 2007-03-29 | Micronic Laser Systems Ab | Methods and systems for pattern generation based on multiple forms of design data |
US7266798B2 (en) * | 2005-10-12 | 2007-09-04 | International Business Machines Corporation | Designer's intent tolerance bands for proximity correction and checking |
US7943967B2 (en) | 2006-03-09 | 2011-05-17 | Tela Innovations, Inc. | Semiconductor device and associated layouts including diffusion contact placement restriction based on relation to linear conductive segments |
US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
US8225261B2 (en) | 2006-03-09 | 2012-07-17 | Tela Innovations, Inc. | Methods for defining contact grid in dynamic array architecture |
US8247846B2 (en) | 2006-03-09 | 2012-08-21 | Tela Innovations, Inc. | Oversized contacts and vias in semiconductor chip defined by linearly constrained topology |
US7932545B2 (en) | 2006-03-09 | 2011-04-26 | Tela Innovations, Inc. | Semiconductor device and associated layouts including gate electrode level region having arrangement of six linear conductive segments with side-to-side spacing less than 360 nanometers |
US8839175B2 (en) | 2006-03-09 | 2014-09-16 | Tela Innovations, Inc. | Scalable meta-data objects |
US8448102B2 (en) | 2006-03-09 | 2013-05-21 | Tela Innovations, Inc. | Optimizing layout of irregular structures in regular layout context |
US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
US8225239B2 (en) | 2006-03-09 | 2012-07-17 | Tela Innovations, Inc. | Methods for defining and utilizing sub-resolution features in linear topology |
US8658542B2 (en) | 2006-03-09 | 2014-02-25 | Tela Innovations, Inc. | Coarse grid design methods and structures |
US9009641B2 (en) | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
US7917879B2 (en) | 2007-08-02 | 2011-03-29 | Tela Innovations, Inc. | Semiconductor device with dynamic array section |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
US8245180B2 (en) | 2006-03-09 | 2012-08-14 | Tela Innovations, Inc. | Methods for defining and using co-optimized nanopatterns for integrated circuit design and apparatus implementing same |
US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
US7870517B1 (en) | 2006-04-28 | 2011-01-11 | Cadence Design Systems, Inc. | Method and mechanism for implementing extraction for an integrated circuit design |
DE102006037162B4 (en) * | 2006-08-01 | 2008-08-21 | Qimonda Ag | Method and apparatus and their use for testing the layout of an electronic circuit |
KR101591100B1 (en) * | 2007-01-18 | 2016-02-02 | 가부시키가이샤 니콘 | Scanner based optical proximity correction system and method of use |
US8286107B2 (en) | 2007-02-20 | 2012-10-09 | Tela Innovations, Inc. | Methods and systems for process compensation technique acceleration |
US7979829B2 (en) | 2007-02-20 | 2011-07-12 | Tela Innovations, Inc. | Integrated circuit cell library with cell-level process compensation technique (PCT) application and associated methods |
US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
US8453094B2 (en) | 2008-01-31 | 2013-05-28 | Tela Innovations, Inc. | Enforcement of semiconductor structure regularity for localized transistors and interconnect |
US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
US20090300572A1 (en) * | 2008-05-30 | 2009-12-03 | Martin Keck | Method of Correcting Etch and Lithographic Processes |
MY167970A (en) | 2008-07-16 | 2018-10-09 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US8473875B2 (en) * | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
US7901850B2 (en) | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
US8039176B2 (en) | 2009-08-26 | 2011-10-18 | D2S, Inc. | Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography |
US8057970B2 (en) | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
US20120278770A1 (en) | 2011-04-26 | 2012-11-01 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
US9159627B2 (en) | 2010-11-12 | 2015-10-13 | Tela Innovations, Inc. | Methods for linewidth modification and apparatus implementing the same |
US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
US9057956B2 (en) | 2011-02-28 | 2015-06-16 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
US9034542B2 (en) | 2011-06-25 | 2015-05-19 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
JP6234998B2 (en) | 2012-04-18 | 2017-11-22 | ディー・ツー・エス・インコーポレイテッドD2S, Inc. | Method and system for forming a pattern using charged particle beam lithography |
US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
US9038003B2 (en) | 2012-04-18 | 2015-05-19 | D2S, Inc. | Method and system for critical dimension uniformity using charged particle beam lithography |
US8959463B2 (en) | 2012-11-08 | 2015-02-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
US9141746B1 (en) * | 2014-03-31 | 2015-09-22 | Cadence Design Systems, Inc. | System and method to drag instance master physical shell |
CN107871034A (en) * | 2017-09-22 | 2018-04-03 | 湖北汽车工业学院 | Tolerance assignment multi-objective optimization design of power method based on mutative scale learning aid algorithm |
US10290354B1 (en) | 2017-10-31 | 2019-05-14 | Sandisk Technologies Llc | Partial memory die |
US10776277B2 (en) | 2017-10-31 | 2020-09-15 | Sandisk Technologies Llc | Partial memory die with inter-plane re-mapping |
EP4264372A1 (en) * | 2020-12-17 | 2023-10-25 | Applied Materials, Inc. | Use of adaptive replacement maps in digital lithography for local cell replacement |
CN113420525B (en) * | 2021-08-23 | 2021-11-19 | 苏州贝克微电子有限公司 | Modeling method for establishing chip three-dimensional diffusion model in EDA (electronic design automation) software |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0043863B1 (en) | 1980-07-10 | 1984-05-16 | International Business Machines Corporation | Process for compensating the proximity effect in electron beam projection devices |
US4520269A (en) * | 1982-11-03 | 1985-05-28 | International Business Machines Corporation | Electron beam lithography proximity correction method |
US4692579A (en) | 1984-05-18 | 1987-09-08 | Hitachi, Ltd. | Electron beam lithography apparatus |
US4895780A (en) | 1987-05-13 | 1990-01-23 | General Electric Company | Adjustable windage method and mask for correction of proximity effect in submicron photolithography |
US5051598A (en) | 1990-09-12 | 1991-09-24 | International Business Machines Corporation | Method for correcting proximity effects in electron beam lithography |
IL97022A0 (en) | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
US5282140A (en) * | 1992-06-24 | 1994-01-25 | Intel Corporation | Particle flux shadowing for three-dimensional topography simulation |
EP0608657A1 (en) | 1993-01-29 | 1994-08-03 | International Business Machines Corporation | Apparatus and method for preparing shape data for proximity correction |
US5533148A (en) | 1993-09-30 | 1996-07-02 | International Business Machines Corporation | Method for restructuring physical design images into hierarchical data models |
KR0163471B1 (en) | 1994-07-05 | 1998-12-15 | 가네꼬 히사시 | Process of fabrication photo-mask used for modified illumination, projection, aligner using photo-mask and method of transferring pattern image from the photomask to photosensitive layer |
JPH08297692A (en) | 1994-09-16 | 1996-11-12 | Mitsubishi Electric Corp | Device and method for correcting optical proximity, and pattern forming method |
JP3934719B2 (en) | 1995-12-22 | 2007-06-20 | 株式会社東芝 | Optical proximity correction method |
JP3469422B2 (en) | 1996-02-23 | 2003-11-25 | 株式会社東芝 | Charged beam writing method and writing apparatus |
US5705301A (en) * | 1996-02-27 | 1998-01-06 | Lsi Logic Corporation | Performing optical proximity correction with the aid of design rule checkers |
US6269472B1 (en) * | 1996-02-27 | 2001-07-31 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
US5795682A (en) * | 1996-03-08 | 1998-08-18 | Lsi Logic Corporation | Guard rings to compensate for side lobe ringing in attenuated phase shift reticles |
US5885734A (en) | 1996-08-15 | 1999-03-23 | Micron Technology, Inc. | Process for modifying a hierarchical mask layout |
US5847959A (en) | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
US5923566A (en) | 1997-03-25 | 1999-07-13 | International Business Machines Corporation | Phase shifted design verification routine |
JPH10282635A (en) | 1997-04-09 | 1998-10-23 | Sony Corp | Method for correcting pattern data, electron beam writing method, photomask and its manufacture, exposure method, semiconductor device and its production and pattern data correcting device |
US6282696B1 (en) * | 1997-08-15 | 2001-08-28 | Lsi Logic Corporation | Performing optical proximity correction with the aid of design rule checkers |
US6009250A (en) | 1997-09-30 | 1999-12-28 | Synopsys, Inc. | Selective flattening in layout areas in computer implemented integrated circuit design |
US6011911A (en) | 1997-09-30 | 2000-01-04 | Synopsys, Inc. | Layout overlap detection with selective flattening in computer implemented integrated circuit design |
US6009251A (en) | 1997-09-30 | 1999-12-28 | Synopsys, Inc. | Method and system for layout verification of an integrated circuit design with reusable subdesigns |
US5974243A (en) * | 1997-10-31 | 1999-10-26 | Hewlett-Packard Company | Adjustable and snap back design-rule halos for computer aided design software |
US6077307A (en) * | 1997-10-31 | 2000-06-20 | Hewlett Packard Company | Forced conformance design-rule halos for computer aided design software |
US6045584A (en) * | 1997-10-31 | 2000-04-04 | Hewlett-Packard Company | Multilevel and beveled-corner design-rule halos for computer aided design software |
US6081658A (en) | 1997-12-31 | 2000-06-27 | Avant! Corporation | Proximity correction system for wafer lithography |
US5922497A (en) | 1998-01-13 | 1999-07-13 | Micron Technology, Inc. | Lithographic imaging system |
JP3241010B2 (en) | 1998-11-18 | 2001-12-25 | 日本電気株式会社 | Optical proximity correction method for semiconductor manufacturing process |
US6529621B1 (en) | 1998-12-17 | 2003-03-04 | Kla-Tencor | Mechanisms for making and inspecting reticles |
US6301697B1 (en) * | 1999-04-30 | 2001-10-09 | Nicolas B. Cobb | Streamlined IC mask layout optical and process correction through correction reuse |
US6778695B1 (en) * | 1999-12-23 | 2004-08-17 | Franklin M. Schellenberg | Design-based reticle defect prioritization |
US6665857B2 (en) | 2000-07-24 | 2003-12-16 | Ronald Frederick Ayres | System and method of generating integrated circuit mask data |
US6557162B1 (en) | 2000-09-29 | 2003-04-29 | Numerical Technologies, Inc. | Method for high yield reticle formation |
-
2000
- 2000-09-29 US US09/676,400 patent/US6557162B1/en not_active Expired - Lifetime
- 2000-12-30 EP EP00989614A patent/EP1320784A1/en not_active Withdrawn
- 2000-12-30 JP JP2002533003A patent/JP3957631B2/en not_active Expired - Fee Related
- 2000-12-30 AU AU2001226100A patent/AU2001226100A1/en not_active Abandoned
- 2000-12-30 WO PCT/US2000/035653 patent/WO2002029491A1/en not_active Application Discontinuation
- 2000-12-30 KR KR1020037004536A patent/KR100668192B1/en active IP Right Grant
-
2003
- 2003-02-19 US US10/369,713 patent/US6968527B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20040004385A (en) | 2004-01-13 |
KR100668192B1 (en) | 2007-01-11 |
US6557162B1 (en) | 2003-04-29 |
WO2002029491A1 (en) | 2002-04-11 |
US6968527B2 (en) | 2005-11-22 |
JP2004511013A (en) | 2004-04-08 |
EP1320784A1 (en) | 2003-06-25 |
US20030154461A1 (en) | 2003-08-14 |
JP3957631B2 (en) | 2007-08-15 |
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