AU1320895A - High voltage thin film semiconductor device - Google Patents

High voltage thin film semiconductor device

Info

Publication number
AU1320895A
AU1320895A AU13208/95A AU1320895A AU1320895A AU 1320895 A AU1320895 A AU 1320895A AU 13208/95 A AU13208/95 A AU 13208/95A AU 1320895 A AU1320895 A AU 1320895A AU 1320895 A AU1320895 A AU 1320895A
Authority
AU
Australia
Prior art keywords
thin film
semiconductor device
high voltage
film semiconductor
voltage thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU13208/95A
Inventor
Francis John Clough
Sankara Narayanan Ekkanath Madathil
William Ireland Milne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SANKARA NARAYANAN EKKANATH MAD
Original Assignee
SANKARA NARAYANAN EKKANATH MAD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SANKARA NARAYANAN EKKANATH MAD filed Critical SANKARA NARAYANAN EKKANATH MAD
Publication of AU1320895A publication Critical patent/AU1320895A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
AU13208/95A 1994-12-20 1994-12-20 High voltage thin film semiconductor device Abandoned AU1320895A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/GB1994/002801 WO1996019833A1 (en) 1994-12-20 1994-12-20 High voltage thin film semiconductor device

Publications (1)

Publication Number Publication Date
AU1320895A true AU1320895A (en) 1996-07-10

Family

ID=10750349

Family Applications (1)

Application Number Title Priority Date Filing Date
AU13208/95A Abandoned AU1320895A (en) 1994-12-20 1994-12-20 High voltage thin film semiconductor device

Country Status (2)

Country Link
AU (1) AU1320895A (en)
WO (1) WO1996019833A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19848828C2 (en) * 1998-10-22 2001-09-13 Infineon Technologies Ag Semiconductor device with low forward voltage and high blocking capability
US20240234532A1 (en) * 2021-12-27 2024-07-11 Boe Technology Group Co., Ltd. Thin film transistor, manufacturing method for the same, and display substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020164B1 (en) * 1979-05-30 1983-05-11 Xerox Corporation Monolithic hvmosfet array
JPS58115020A (en) * 1981-12-28 1983-07-08 Sharp Corp Preparation of amorphous silicon film
JPS61245558A (en) * 1985-04-23 1986-10-31 Hitachi Ltd Resistance circuit element
JP2581149B2 (en) * 1988-04-22 1997-02-12 富士電機株式会社 Thin film high voltage semiconductor device
DE69233742D1 (en) * 1991-01-31 2008-09-18 Toshiba Kk Semiconductor device with high breakdown voltage

Also Published As

Publication number Publication date
WO1996019833A1 (en) 1996-06-27

Similar Documents

Publication Publication Date Title
EP0702404A3 (en) Semiconductor device
AU631297B2 (en) Thin film electrical component
EP0778498A3 (en) Semiconductor exposure device
AU5659996A (en) Semiconductor device
AU3711897A (en) Semiconductor component for high voltage
AU7227896A (en) Semiconductor device
AU1040397A (en) Semiconductor device
AU1279297A (en) Electrical device
EP0616331A3 (en) Semiconductor memory device
EP0704900A3 (en) Film carrier semiconductor device
EP0776092A3 (en) Semiconductor device
AU2712597A (en) Piezoelectric thin film device
EP0714129A3 (en) Semiconductor device
AU659002B2 (en) Semiconductor device
EP0782141A3 (en) Voltage pumping circuit for semiconductor memory device
TW326969U (en) Thin film forming device
KR0135576B1 (en) Semiconductor device having planerizing insulating film
EP0715326A3 (en) Sealed contact device
AU7238194A (en) Semiconductor device and its manufacture
AU3393493A (en) Semiconductor device
EP0740406A3 (en) Switching semiconductor device
EP0496639A3 (en) Polysilicon thin film semiconductor device
EP0887693A4 (en) Thin film forming device
AU1416997A (en) Secure semiconductor device
AU3240195A (en) Improved semiconductor films