AU1320895A - High voltage thin film semiconductor device - Google Patents
High voltage thin film semiconductor deviceInfo
- Publication number
- AU1320895A AU1320895A AU13208/95A AU1320895A AU1320895A AU 1320895 A AU1320895 A AU 1320895A AU 13208/95 A AU13208/95 A AU 13208/95A AU 1320895 A AU1320895 A AU 1320895A AU 1320895 A AU1320895 A AU 1320895A
- Authority
- AU
- Australia
- Prior art keywords
- thin film
- semiconductor device
- high voltage
- film semiconductor
- voltage thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/GB1994/002801 WO1996019833A1 (en) | 1994-12-20 | 1994-12-20 | High voltage thin film semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU1320895A true AU1320895A (en) | 1996-07-10 |
Family
ID=10750349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU13208/95A Abandoned AU1320895A (en) | 1994-12-20 | 1994-12-20 | High voltage thin film semiconductor device |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU1320895A (en) |
WO (1) | WO1996019833A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19848828C2 (en) * | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Semiconductor device with low forward voltage and high blocking capability |
US20240234532A1 (en) * | 2021-12-27 | 2024-07-11 | Boe Technology Group Co., Ltd. | Thin film transistor, manufacturing method for the same, and display substrate |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0020164B1 (en) * | 1979-05-30 | 1983-05-11 | Xerox Corporation | Monolithic hvmosfet array |
JPS58115020A (en) * | 1981-12-28 | 1983-07-08 | Sharp Corp | Preparation of amorphous silicon film |
JPS61245558A (en) * | 1985-04-23 | 1986-10-31 | Hitachi Ltd | Resistance circuit element |
JP2581149B2 (en) * | 1988-04-22 | 1997-02-12 | 富士電機株式会社 | Thin film high voltage semiconductor device |
DE69233742D1 (en) * | 1991-01-31 | 2008-09-18 | Toshiba Kk | Semiconductor device with high breakdown voltage |
-
1994
- 1994-12-20 WO PCT/GB1994/002801 patent/WO1996019833A1/en unknown
- 1994-12-20 AU AU13208/95A patent/AU1320895A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1996019833A1 (en) | 1996-06-27 |
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