AU1218401A - Fluid processing system - Google Patents

Fluid processing system

Info

Publication number
AU1218401A
AU1218401A AU12184/01A AU1218401A AU1218401A AU 1218401 A AU1218401 A AU 1218401A AU 12184/01 A AU12184/01 A AU 12184/01A AU 1218401 A AU1218401 A AU 1218401A AU 1218401 A AU1218401 A AU 1218401A
Authority
AU
Australia
Prior art keywords
processing system
fluid processing
fluid
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU12184/01A
Inventor
Michael F. Brunelli
James F. Loan
Jack P. Salerno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CVD Systems Inc
Original Assignee
CVD Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/421,823 external-priority patent/US6296711B1/en
Application filed by CVD Systems Inc filed Critical CVD Systems Inc
Publication of AU1218401A publication Critical patent/AU1218401A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00—Actuating devices; Operating means; Releasing devices
    • F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
    • F16K31/122—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston
    • F16K31/1221—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston one side of the piston being spring-loaded
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00—Actuating devices; Operating means; Releasing devices
    • F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
    • F16K31/126—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a diaphragm, bellows, or the like
    • F16K31/1262—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a diaphragm, bellows, or the like one side of the diaphragm being spring loaded
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
    • F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU12184/01A 1999-10-20 2000-10-20 Fluid processing system Abandoned AU1218401A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US42182899A 1999-10-20 1999-10-20
US09421823 1999-10-20
US09421828 1999-10-20
US09/421,823 US6296711B1 (en) 1998-04-14 1999-10-20 Film processing system
US67846000A 2000-10-03 2000-10-03
US09678460 2000-10-03
PCT/US2000/028998 WO2001029282A2 (en) 1999-10-20 2000-10-20 Fluid processing system

Publications (1)

Publication Number Publication Date
AU1218401A true AU1218401A (en) 2001-04-30

Family

ID=27411324

Family Applications (1)

Application Number Title Priority Date Filing Date
AU12184/01A Abandoned AU1218401A (en) 1999-10-20 2000-10-20 Fluid processing system

Country Status (2)

Country Link
AU (1) AU1218401A (en)
WO (1) WO2001029282A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BRPI0414547A (en) * 2003-09-19 2006-11-07 Akzo Nobel Nv substrate (s) metallization by a liquid / vapor deposition process
US7918938B2 (en) 2006-01-19 2011-04-05 Asm America, Inc. High temperature ALD inlet manifold
EP2026889A4 (en) * 2006-06-12 2011-09-07 Semequip Inc Vapor delivery to devices under vacuum
KR101084275B1 (en) 2009-09-22 2011-11-16 삼성모바일디스플레이주식회사 Source gas supplying unit, deposition device having the same and method thereof
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
EP3111204A4 (en) * 2014-02-24 2017-12-06 Mocon, Inc. Rugged target-analyte permeation testing instrument employing a consolidating block manifold
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10927459B2 (en) 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
KR20210048408A (en) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. Semiconductor deposition reactor manifolds
CN110767668B (en) * 2019-12-30 2020-03-27 杭州美迪凯光电科技股份有限公司 CLCC packaging body cover plate with nanoscale surface, packaging body and camera module

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243314A (en) * 1962-09-14 1966-03-29 Ibm Silicon oxide film formation
US3556841A (en) * 1967-04-11 1971-01-19 Matsushita Electronics Corp Process for forming silicon dioxide films
JPS6089575A (en) * 1983-10-21 1985-05-20 Seiko Epson Corp Production of silicon nitride film
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
US4780334A (en) * 1987-03-13 1988-10-25 General Electric Company Method and composition for depositing silicon dioxide layers
JPS6422050A (en) * 1987-07-17 1989-01-25 Matsushita Electric Ind Co Ltd Method for filling groove
JPH01300528A (en) * 1988-05-30 1989-12-05 Fujitsu Ltd Thin-film forming method
US4925259A (en) * 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
US5100599A (en) * 1989-06-15 1992-03-31 The Boeing Company Method for producing thin film particulates of controlled shape
NL9002164A (en) * 1990-10-05 1992-05-06 Philips Nv METHOD FOR PROVIDING A SUBSTRATE OF A SURFACE LAYER FROM A VAPOR AND AN APPARATUS FOR APPLYING SUCH A METHOD
DE4124018C1 (en) * 1991-07-19 1992-11-19 Leybold Ag, 6450 Hanau, De
DE4236324C1 (en) * 1992-10-28 1993-09-02 Schott Glaswerke, 55122 Mainz, De
US5630878A (en) * 1994-02-20 1997-05-20 Stec Inc. Liquid material-vaporizing and supplying apparatus
JPH07254590A (en) * 1994-03-15 1995-10-03 Fujitsu Ltd Manufacture of semiconductor device
US5776254A (en) * 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
CA2167957A1 (en) * 1995-01-27 1996-07-28 Hongwen Li Method of making a tantala/silica interference filter on a vitreous substrate and an electric lamp made thereby
US5868159A (en) * 1996-07-12 1999-02-09 Mks Instruments, Inc. Pressure-based mass flow controller
US6074691A (en) * 1997-06-24 2000-06-13 Balzers Aktiengesellschaft Method for monitoring the flow of a gas into a vacuum reactor
US5966499A (en) * 1997-07-28 1999-10-12 Mks Instruments, Inc. System for delivering a substantially constant vapor flow to a chemical process reactor
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
AU3642599A (en) * 1998-04-14 1999-11-01 Cvd Systems, Inc. Film deposition system

Also Published As

Publication number Publication date
WO2001029282A3 (en) 2001-11-22
WO2001029282A2 (en) 2001-04-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase