AU1088401A - Deposition of transition metal carbides - Google Patents

Deposition of transition metal carbides

Info

Publication number
AU1088401A
AU1088401A AU10884/01A AU1088401A AU1088401A AU 1088401 A AU1088401 A AU 1088401A AU 10884/01 A AU10884/01 A AU 10884/01A AU 1088401 A AU1088401 A AU 1088401A AU 1088401 A AU1088401 A AU 1088401A
Authority
AU
Australia
Prior art keywords
deposition
transition metal
metal carbides
carbides
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU10884/01A
Inventor
Kai-Erik Elers
Suvi P. Haukka
Sari Johanna Kaipio
Ville Antero Saanila
Pekka Juha Soininen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM Microchemistry Oy
Original Assignee
ASM America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FI992233A external-priority patent/FI118158B/en
Priority claimed from FI992234A external-priority patent/FI117944B/en
Priority claimed from FI992235A external-priority patent/FI117943B/en
Priority claimed from FI20000564A external-priority patent/FI119941B/en
Application filed by ASM America Inc filed Critical ASM America Inc
Publication of AU1088401A publication Critical patent/AU1088401A/en
Abandoned legal-status Critical Current

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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
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    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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AU10884/01A 1999-10-15 2000-10-16 Deposition of transition metal carbides Abandoned AU1088401A (en)

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Application Number Priority Date Filing Date Title
US15979999P 1999-10-15 1999-10-15
FI19992234 1999-10-15
FI992233A FI118158B (en) 1999-10-15 1999-10-15 Process for modifying the starting chemical in an ALD process
FI19992233 1999-10-15
FI992234A FI117944B (en) 1999-10-15 1999-10-15 A method for growing transition metal nitride thin films
FI19992235 1999-10-15
FI992235A FI117943B (en) 1999-10-15 1999-10-15 Deposition of metal carbide film on substrate, e.g. integrated circuit, involves atomic layer deposition
US60159799 1999-10-15
US17694800P 2000-01-18 2000-01-18
US60176948 2000-01-18
FI20000564A FI119941B (en) 1999-10-15 2000-03-10 A process for preparing nanolaminates
FI20000564 2000-03-10
PCT/US2000/028537 WO2001029280A1 (en) 1999-10-15 2000-10-16 Deposition of transition metal carbides

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