ATE85160T1 - Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren. - Google Patents
Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren.Info
- Publication number
- ATE85160T1 ATE85160T1 AT90310563T AT90310563T ATE85160T1 AT E85160 T1 ATE85160 T1 AT E85160T1 AT 90310563 T AT90310563 T AT 90310563T AT 90310563 T AT90310563 T AT 90310563T AT E85160 T1 ATE85160 T1 AT E85160T1
- Authority
- AT
- Austria
- Prior art keywords
- light
- emitting
- receiving device
- manufacture
- light emitting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- -1 diallyl compound Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000178 monomer Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000011342 resin composition Substances 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Multi-Process Working Machines And Systems (AREA)
- Led Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Light Receiving Elements (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1254538A JPH03116857A (ja) | 1989-09-29 | 1989-09-29 | 発光または受光装置 |
EP90310563A EP0420629B1 (de) | 1989-09-29 | 1990-09-27 | Lichtemittierende oder lichtempfangende Vorrichtung und ihr Herstellungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE85160T1 true ATE85160T1 (de) | 1993-02-15 |
Family
ID=17266437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT90310563T ATE85160T1 (de) | 1989-09-29 | 1990-09-27 | Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren. |
Country Status (9)
Country | Link |
---|---|
US (1) | US5126826A (de) |
EP (1) | EP0420629B1 (de) |
JP (1) | JPH03116857A (de) |
KR (1) | KR910007166A (de) |
CN (1) | CN1052221A (de) |
AT (1) | ATE85160T1 (de) |
CA (1) | CA2026375A1 (de) |
DE (1) | DE69000824T2 (de) |
DK (1) | DK0420629T3 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198786A (ja) * | 1992-01-22 | 1993-08-06 | Sharp Corp | クリアモールドccd固体撮像素子 |
US5514627A (en) * | 1994-01-24 | 1996-05-07 | Hewlett-Packard Company | Method and apparatus for improving the performance of light emitting diodes |
KR100643442B1 (ko) | 1996-06-26 | 2006-11-10 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
JP3173586B2 (ja) * | 1998-03-26 | 2001-06-04 | 日本電気株式会社 | 全モールド型固体撮像装置およびその製造方法 |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6204523B1 (en) * | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
AU5717400A (en) * | 1999-06-14 | 2001-01-02 | Cancer Research Ventures Limited | Cancer therapy |
US6387723B1 (en) * | 2001-01-19 | 2002-05-14 | Silicon Light Machines | Reduced surface charging in silicon-based devices |
JP4275889B2 (ja) * | 2001-02-09 | 2009-06-10 | 株式会社カネカ | 発光ダイオード及びその製造方法 |
JP4275890B2 (ja) * | 2001-02-13 | 2009-06-10 | 株式会社カネカ | 発光ダイオード及びその製造方法 |
JP2002252375A (ja) * | 2001-02-23 | 2002-09-06 | Kanegafuchi Chem Ind Co Ltd | 発光ダイオード及びその製造方法 |
JP4101468B2 (ja) | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US6747781B2 (en) | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
US6646778B2 (en) | 2001-08-01 | 2003-11-11 | Silicon Light Machines | Grating light valve with encapsulated dampening gas |
US6829092B2 (en) | 2001-08-15 | 2004-12-07 | Silicon Light Machines, Inc. | Blazed grating light valve |
US6800238B1 (en) | 2002-01-15 | 2004-10-05 | Silicon Light Machines, Inc. | Method for domain patterning in low coercive field ferroelectrics |
US6767751B2 (en) | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
US6728023B1 (en) | 2002-05-28 | 2004-04-27 | Silicon Light Machines | Optical device arrays with optimized image resolution |
US6822797B1 (en) | 2002-05-31 | 2004-11-23 | Silicon Light Machines, Inc. | Light modulator structure for producing high-contrast operation using zero-order light |
US6829258B1 (en) | 2002-06-26 | 2004-12-07 | Silicon Light Machines, Inc. | Rapidly tunable external cavity laser |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
US6801354B1 (en) | 2002-08-20 | 2004-10-05 | Silicon Light Machines, Inc. | 2-D diffraction grating for substantially eliminating polarization dependent losses |
US6712480B1 (en) | 2002-09-27 | 2004-03-30 | Silicon Light Machines | Controlled curvature of stressed micro-structures |
JP4360595B2 (ja) * | 2002-10-18 | 2009-11-11 | ペルノックス株式会社 | 光電変換装置 |
JP2004186168A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
US6806997B1 (en) | 2003-02-28 | 2004-10-19 | Silicon Light Machines, Inc. | Patterned diffractive light modulator ribbon for PDL reduction |
US6829077B1 (en) | 2003-02-28 | 2004-12-07 | Silicon Light Machines, Inc. | Diffractive light modulator with dynamically rotatable diffraction plane |
JP2006049533A (ja) * | 2004-08-04 | 2006-02-16 | Wacker Asahikasei Silicone Co Ltd | 樹脂封止発光ダイオード装置及び封止方法 |
CN101308836B (zh) * | 2007-05-18 | 2011-11-02 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管、发光二极管组件及发光二极管灯串 |
JP4807522B2 (ja) * | 2007-09-18 | 2011-11-02 | 株式会社朝日ラバー | 半導体光学素子部品のはんだ付け方法及び半導体光学素子部品 |
TWI370216B (en) * | 2009-06-29 | 2012-08-11 | Lextar Electronics Corp | Led lighting device |
US9349927B2 (en) * | 2011-10-18 | 2016-05-24 | Nitto Denko Corporation | Encapsulating sheet and optical semiconductor element device |
US9153755B2 (en) * | 2011-10-18 | 2015-10-06 | Nitto Denko Corporation | Silicone resin sheet, cured sheet, and light emitting diode device and producing method thereof |
EP2682738B1 (de) * | 2012-07-05 | 2020-12-23 | Atlas Material Testing Technology GmbH | Detektion der Emissionsstrahlung einer UV-Lichtemissionsdiode durch eine baugleiche UV-Lichtempfangsdiode |
DE102012108413A1 (de) * | 2012-09-10 | 2014-03-13 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauteil, Optoelektronisches Bauelement und Verfahren zur Herstellung des optoelektronischen Bauelements |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032963A (en) * | 1974-09-03 | 1977-06-28 | Motorola, Inc. | Package and method for a semiconductor radiant energy emitting device |
GB1585477A (en) * | 1976-01-26 | 1981-03-04 | Gen Electric | Semiconductors |
US4278784A (en) * | 1980-02-06 | 1981-07-14 | Western Electric Company, Inc. | Encapsulated electronic devices and encapsulating compositions |
IT1130285B (it) * | 1980-03-05 | 1986-06-11 | Anic Spa | Procedimento per la sintesi di allil carbonati di alcoli poliidrici e loro derivati |
US4480009A (en) * | 1980-12-15 | 1984-10-30 | M&T Chemicals Inc. | Siloxane-containing polymers |
EP0076656B1 (de) * | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden |
JPS5987840A (ja) * | 1982-11-10 | 1984-05-21 | Toray Silicone Co Ltd | 半導体装置 |
FR2549291B2 (fr) * | 1982-10-29 | 1986-05-09 | Radiotechnique Compelec | Procede d'encapsulation de composants electroniques par extrusion de matiere plastique et applications a la fabrication de voyants lumineux et a l'encapsulation de circuits electroniques |
IT1160172B (it) * | 1983-01-13 | 1987-03-04 | Anic Spa | Composizione liquida polimerizzabile, atta a produrre polimeri con elevate caratteristiche ottiche e meccaniche e polimeri e manufatti ottenuti da detta composizione |
US4777520A (en) * | 1986-03-27 | 1988-10-11 | Oki Electric Industry Co. Ltd. | Heat-resistant plastic semiconductor device |
US5101264A (en) * | 1988-03-31 | 1992-03-31 | Mitsui Petrochemical Ind. | Light-emitting or receiving device with smooth and hard encapsulant resin |
-
1989
- 1989-09-29 JP JP1254538A patent/JPH03116857A/ja active Pending
-
1990
- 1990-09-27 US US07/588,835 patent/US5126826A/en not_active Expired - Fee Related
- 1990-09-27 DK DK90310563.3T patent/DK0420629T3/da active
- 1990-09-27 EP EP90310563A patent/EP0420629B1/de not_active Expired - Lifetime
- 1990-09-27 DE DE9090310563T patent/DE69000824T2/de not_active Expired - Fee Related
- 1990-09-27 CA CA002026375A patent/CA2026375A1/en not_active Abandoned
- 1990-09-27 AT AT90310563T patent/ATE85160T1/de not_active IP Right Cessation
- 1990-09-29 CN CN90109000A patent/CN1052221A/zh active Pending
- 1990-09-29 KR KR1019900015692A patent/KR910007166A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0420629B1 (de) | 1993-01-27 |
EP0420629A1 (de) | 1991-04-03 |
US5126826A (en) | 1992-06-30 |
CA2026375A1 (en) | 1991-03-30 |
DE69000824D1 (de) | 1993-03-11 |
JPH03116857A (ja) | 1991-05-17 |
DE69000824T2 (de) | 1993-05-19 |
KR910007166A (ko) | 1991-04-30 |
CN1052221A (zh) | 1991-06-12 |
DK0420629T3 (da) | 1993-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |