ATE545160T1 - Herstellung eines kohlenstoff-passivierten ovonic-schwellenschalters - Google Patents
Herstellung eines kohlenstoff-passivierten ovonic-schwellenschaltersInfo
- Publication number
- ATE545160T1 ATE545160T1 AT09180915T AT09180915T ATE545160T1 AT E545160 T1 ATE545160 T1 AT E545160T1 AT 09180915 T AT09180915 T AT 09180915T AT 09180915 T AT09180915 T AT 09180915T AT E545160 T1 ATE545160 T1 AT E545160T1
- Authority
- AT
- Austria
- Prior art keywords
- threshold switch
- carbon
- ovonic threshold
- production
- passivated
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052799 carbon Inorganic materials 0.000 title abstract 4
- 239000003292 glue Substances 0.000 abstract 2
- 239000003575 carbonaceous material Substances 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/346,705 US7939815B2 (en) | 2008-12-30 | 2008-12-30 | Forming a carbon passivated ovonic threshold switch |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE545160T1 true ATE545160T1 (de) | 2012-02-15 |
Family
ID=42104564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09180915T ATE545160T1 (de) | 2008-12-30 | 2009-12-29 | Herstellung eines kohlenstoff-passivierten ovonic-schwellenschalters |
Country Status (3)
Country | Link |
---|---|
US (1) | US7939815B2 (de) |
EP (1) | EP2204860B1 (de) |
AT (1) | ATE545160T1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8188454B2 (en) * | 2005-10-28 | 2012-05-29 | Ovonyx, Inc. | Forming a phase change memory with an ovonic threshold switch |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
US8093576B1 (en) * | 2009-11-30 | 2012-01-10 | Micron Technology, Inc. | Chemical-mechanical polish termination layer to build electrical device isolation |
US8765581B2 (en) | 2009-11-30 | 2014-07-01 | Micron Technology, Inc. | Self-aligned cross-point phase change memory-switch array |
US8530875B1 (en) * | 2010-05-06 | 2013-09-10 | Micron Technology, Inc. | Phase change memory including ovonic threshold switch with layered electrode and methods for forming same |
US9166158B2 (en) | 2013-02-25 | 2015-10-20 | Micron Technology, Inc. | Apparatuses including electrodes having a conductive barrier material and methods of forming same |
CN104518084B (zh) * | 2013-09-29 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
US10084016B2 (en) | 2013-11-21 | 2018-09-25 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US11223014B2 (en) | 2014-02-25 | 2022-01-11 | Micron Technology, Inc. | Semiconductor structures including liners comprising alucone and related methods |
US9577010B2 (en) | 2014-02-25 | 2017-02-21 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US9484196B2 (en) | 2014-02-25 | 2016-11-01 | Micron Technology, Inc. | Semiconductor structures including liners comprising alucone and related methods |
US9806129B2 (en) | 2014-02-25 | 2017-10-31 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US10249819B2 (en) | 2014-04-03 | 2019-04-02 | Micron Technology, Inc. | Methods of forming semiconductor structures including multi-portion liners |
US9768378B2 (en) | 2014-08-25 | 2017-09-19 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US10424619B2 (en) | 2016-01-13 | 2019-09-24 | Samsung Electronics Co., Ltd. | Variable resistance memory devices and methods of manufacturing the same |
CN108630806A (zh) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
KR102375588B1 (ko) * | 2017-07-06 | 2022-03-16 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US10374014B2 (en) * | 2017-10-16 | 2019-08-06 | Sandisk Technologies Llc | Multi-state phase change memory device with vertical cross-point structure |
US10593875B2 (en) * | 2018-06-15 | 2020-03-17 | Macronix International Co., Ltd. | Self-aligned 3D memory with confined cell |
US10937832B2 (en) * | 2018-06-21 | 2021-03-02 | Macronix International Co., Ltd. | 3D memory with confined cell |
KR102557911B1 (ko) * | 2018-08-31 | 2023-07-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4845533A (en) * | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
US5159661A (en) * | 1990-10-05 | 1992-10-27 | Energy Conversion Devices, Inc. | Vertically interconnected parallel distributed processor |
US5414271A (en) * | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
US6795338B2 (en) * | 2002-12-13 | 2004-09-21 | Intel Corporation | Memory having access devices using phase change material such as chalcogenide |
US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
EP1677357A1 (de) * | 2004-12-30 | 2006-07-05 | STMicroelectronics S.r.l. | Phasenübergangsspeichereinrichtung mit einer Haftschicht und Herstellungsverfahren dafür |
JP2006324501A (ja) * | 2005-05-19 | 2006-11-30 | Toshiba Corp | 相変化メモリおよびその製造方法 |
-
2008
- 2008-12-30 US US12/346,705 patent/US7939815B2/en active Active
-
2009
- 2009-12-29 AT AT09180915T patent/ATE545160T1/de active
- 2009-12-29 EP EP09180915A patent/EP2204860B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
EP2204860B1 (de) | 2012-02-08 |
EP2204860A1 (de) | 2010-07-07 |
US7939815B2 (en) | 2011-05-10 |
US20100163818A1 (en) | 2010-07-01 |
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