ATE544233T1 - Progressive stromerzeugungsverstärker - Google Patents
Progressive stromerzeugungsverstärkerInfo
- Publication number
- ATE544233T1 ATE544233T1 AT09156926T AT09156926T ATE544233T1 AT E544233 T1 ATE544233 T1 AT E544233T1 AT 09156926 T AT09156926 T AT 09156926T AT 09156926 T AT09156926 T AT 09156926T AT E544233 T1 ATE544233 T1 AT E544233T1
- Authority
- AT
- Austria
- Prior art keywords
- power level
- amplifier
- level signal
- power
- power generation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/192—A hybrid coupler being used at the input of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/118,202 US7936212B2 (en) | 2008-05-09 | 2008-05-09 | Progressive power generating amplifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE544233T1 true ATE544233T1 (de) | 2012-02-15 |
Family
ID=40848410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09156926T ATE544233T1 (de) | 2008-05-09 | 2009-03-31 | Progressive stromerzeugungsverstärker |
Country Status (5)
Country | Link |
---|---|
US (1) | US7936212B2 (de) |
EP (1) | EP2117119B1 (de) |
JP (1) | JP5297881B2 (de) |
CN (1) | CN101577528B (de) |
AT (1) | ATE544233T1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100962628B1 (ko) * | 2009-10-01 | 2010-06-11 | 박정규 | 방송 신호 레벨링 장치 및 방법 |
US9484613B1 (en) * | 2010-01-29 | 2016-11-01 | United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Ka-band waveguide 2-way hybrid combiner for MMIC amplifiers with unequal and arbitrary power output ratio |
JP5510122B2 (ja) * | 2010-06-30 | 2014-06-04 | アイコム株式会社 | 高周波回路 |
US8400216B2 (en) | 2010-11-05 | 2013-03-19 | Postech Academy-Industry Foundation | 3-way Doherty power amplifier using driving amplifier |
KR101145666B1 (ko) * | 2011-02-24 | 2012-05-25 | 포항공과대학교 산학협력단 | 고주파용 3-스테이지 질화 갈륨계 고전자 이동도 트랜지스터(GaN HEMT) 도허티 전력증폭기 |
WO2012118874A2 (en) * | 2011-03-03 | 2012-09-07 | Thomson Licensing | Apparatus and method for processing a radio frequency signal |
US20120281737A1 (en) * | 2011-05-05 | 2012-11-08 | Liang Hung | Wireless communications including distributed feedback architecture |
US8744396B2 (en) * | 2011-05-09 | 2014-06-03 | Bae Systems Information And Electronic Systems Integration Inc. | Compact modular upgrade for GMR software defined tactical radio |
US9270227B2 (en) * | 2011-07-29 | 2016-02-23 | Freescale Semiconductor, Inc. | Oscillator systems having annular resonant circuitry |
US8718580B2 (en) * | 2011-11-11 | 2014-05-06 | Hbc Solutions, Inc. | Broadband high efficiency amplifier system incorporating dynamic modulation of load impedance |
US8717099B2 (en) | 2012-03-16 | 2014-05-06 | Infineon Technologies Ag | Wideband doherty amplifier circuit with peaking impedance absorption |
KR101712254B1 (ko) * | 2012-05-29 | 2017-03-03 | 닛본 덴끼 가부시끼가이샤 | 다계통 증폭 장치 |
CN103580613B (zh) * | 2012-08-10 | 2018-05-08 | 中兴通讯股份有限公司 | 一种多路功放装置及其实现方法 |
US9407214B2 (en) * | 2013-06-28 | 2016-08-02 | Cree, Inc. | MMIC power amplifier |
US10033111B2 (en) * | 2013-07-12 | 2018-07-24 | Commscope Technologies Llc | Wideband twin beam antenna array |
US9912298B2 (en) | 2014-05-13 | 2018-03-06 | Skyworks Solutions, Inc. | Systems and methods related to linear load modulated power amplifiers |
US9800207B2 (en) | 2014-08-13 | 2017-10-24 | Skyworks Solutions, Inc. | Doherty power amplifier combiner with tunable impedance termination circuit |
US9712119B2 (en) * | 2014-10-25 | 2017-07-18 | Skyworks Solutions, Inc. | Doherty power amplifier with tunable input network |
WO2016086974A1 (en) * | 2014-12-02 | 2016-06-09 | Huawei Technologies Co.,Ltd | An amplifying system for amplifying a communication signal |
KR102140192B1 (ko) * | 2015-05-29 | 2020-08-03 | 삼성전기주식회사 | 도허티 전력 증폭기 |
EP3121960B1 (de) * | 2015-07-22 | 2019-10-23 | Ampleon Netherlands B.V. | Verstärkerbaugruppe |
JP6332565B2 (ja) | 2015-09-01 | 2018-05-30 | 日本電気株式会社 | 電力増幅装置およびテレビジョン信号送信システム |
CN105897181B (zh) * | 2016-05-24 | 2018-11-09 | 桂林市思奇通信设备有限公司 | 一种高速率数字信号发射机功率放大装置 |
US9974038B2 (en) * | 2016-06-30 | 2018-05-15 | Macom Technology Solutions Holdings, Inc. | Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices |
CN107241073B (zh) * | 2017-05-25 | 2020-05-05 | 江苏大学 | 一种提高线性度的并行结构功率放大器 |
CN107947744B (zh) * | 2017-11-28 | 2021-04-16 | 广东工业大学 | 一种功率合成型的功率放大器及毫米波芯片 |
JP6658788B2 (ja) * | 2018-04-12 | 2020-03-04 | 日本電気株式会社 | 電力増幅装置およびテレビジョン信号送信システム |
US11190154B2 (en) * | 2019-06-14 | 2021-11-30 | Murata Manufacturing Co., Ltd. | Power amplifier circuit |
CN113325788B (zh) * | 2021-08-03 | 2021-10-01 | 成都沃特塞恩电子技术有限公司 | 应用于加速器的高精度幅相检测的功率源控制***和方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4305043A (en) * | 1980-03-03 | 1981-12-08 | Ford Aerospace & Communications Corporation | Coupler having arbitrary impedance transformation ratio and arbitrary coubling ratio |
US6316793B1 (en) * | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
TW468271B (en) * | 1999-03-26 | 2001-12-11 | United Microelectronics Corp | Thin film resistor used in a semiconductor chip and its manufacturing method |
US6548333B2 (en) * | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
US6849882B2 (en) | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
US6515541B2 (en) * | 2001-06-13 | 2003-02-04 | Skyworks Solutions, Inc. | Multi-level power amplifier |
JP4183941B2 (ja) * | 2001-12-13 | 2008-11-19 | 株式会社エヌ・ティ・ティ・ドコモ | 高効率増幅器 |
US6737922B2 (en) * | 2002-01-28 | 2004-05-18 | Cree Microwave, Inc. | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division |
US6791417B2 (en) * | 2002-01-28 | 2004-09-14 | Cree Microwave, Inc. | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances |
US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
WO2004088837A2 (en) | 2003-03-28 | 2004-10-14 | Andrew Corporation | Doherty amplifier with output hybrid coupler |
US6922102B2 (en) * | 2003-03-28 | 2005-07-26 | Andrew Corporation | High efficiency amplifier |
WO2006003608A1 (en) * | 2004-06-29 | 2006-01-12 | Koninklijke Philips Electronics N.V. | Integrated doherty type amplifier arrangement with high power efficiency |
JP4141422B2 (ja) | 2004-08-11 | 2008-08-27 | 東洋エクステリア株式会社 | カーポートのサポート支柱用地表埋込支持金具 |
JP2006157900A (ja) | 2004-11-05 | 2006-06-15 | Hitachi Kokusai Electric Inc | 増幅器 |
US7248108B2 (en) * | 2004-12-29 | 2007-07-24 | Agere Systems Inc. | Power amplifier employing thin film ferroelectric phase shift element |
KR20060077818A (ko) * | 2004-12-31 | 2006-07-05 | 학교법인 포항공과대학교 | 비대칭 전력 구동을 이용한 전력 증폭 장치 |
JP2006339981A (ja) * | 2005-06-01 | 2006-12-14 | Toshiba Corp | ドハティ増幅器 |
US7362170B2 (en) * | 2005-12-01 | 2008-04-22 | Andrew Corporation | High gain, high efficiency power amplifier |
US7382194B2 (en) * | 2006-01-18 | 2008-06-03 | Triquint Semiconductor, Inc. | Switched distributed power amplifier |
-
2008
- 2008-05-09 US US12/118,202 patent/US7936212B2/en active Active
-
2009
- 2009-03-31 EP EP09156926A patent/EP2117119B1/de active Active
- 2009-03-31 AT AT09156926T patent/ATE544233T1/de active
- 2009-05-11 JP JP2009114907A patent/JP5297881B2/ja active Active
- 2009-05-11 CN CN200910141031.8A patent/CN101577528B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP5297881B2 (ja) | 2013-09-25 |
EP2117119A1 (de) | 2009-11-11 |
US20090278599A1 (en) | 2009-11-12 |
EP2117119B1 (de) | 2012-02-01 |
JP2009273134A (ja) | 2009-11-19 |
US7936212B2 (en) | 2011-05-03 |
CN101577528A (zh) | 2009-11-11 |
CN101577528B (zh) | 2015-12-09 |
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