ATE528856T1 - Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem - Google Patents

Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem

Info

Publication number
ATE528856T1
ATE528856T1 AT09008091T AT09008091T ATE528856T1 AT E528856 T1 ATE528856 T1 AT E528856T1 AT 09008091 T AT09008091 T AT 09008091T AT 09008091 T AT09008091 T AT 09008091T AT E528856 T1 ATE528856 T1 AT E528856T1
Authority
AT
Austria
Prior art keywords
power module
current
current path
input
transient current
Prior art date
Application number
AT09008091T
Other languages
English (en)
Inventor
Michael Frisch
Ernoe Temesi
Original Assignee
Vincotech Holdings S A R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vincotech Holdings S A R L filed Critical Vincotech Holdings S A R L
Application granted granted Critical
Publication of ATE528856T1 publication Critical patent/ATE528856T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/642Capacitive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483Converters with outputs that each can have more than two voltages levels
    • H02M7/487Neutral point clamped inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
AT09008091T 2009-06-19 2009-06-19 Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem ATE528856T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP20090008091 EP2264894B1 (de) 2009-06-19 2009-06-19 Leistungsmodul mit zusätzlichem transientem Strompfad und Leistungsmodulsystem

Publications (1)

Publication Number Publication Date
ATE528856T1 true ATE528856T1 (de) 2011-10-15

Family

ID=41130387

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09008091T ATE528856T1 (de) 2009-06-19 2009-06-19 Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem

Country Status (3)

Country Link
US (1) US20100328833A1 (de)
EP (1) EP2264894B1 (de)
AT (1) ATE528856T1 (de)

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US8441128B2 (en) * 2011-08-16 2013-05-14 Infineon Technologies Ag Semiconductor arrangement
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
DE102012217905B3 (de) 2012-10-01 2013-11-07 Semikron Elektronik Gmbh & Co. Kg 3-Level-Stromrichterhalbbrücke
DE102013213986B4 (de) 2013-07-17 2016-02-04 Siemens Aktiengesellschaft Dreipunkt-Stromrichter
JP6483963B2 (ja) * 2014-06-11 2019-03-13 株式会社日立製作所 電力変換装置
DE102014109385A1 (de) * 2014-07-04 2016-01-07 Karlsruher Institut für Technologie Elektronische Bauteilanordnung
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
WO2016131693A1 (en) 2015-02-17 2016-08-25 Koninklijke Philips N.V. Ceramic substrate and method for producing a ceramic substrate
JP6637065B2 (ja) 2015-03-13 2020-01-29 トランスフォーム インコーポレーテッド 高電力回路のためのスイッチングデバイスの並列化
DE102015216083A1 (de) * 2015-08-24 2017-03-02 Siemens Aktiengesellschaft Modulanordnung zum induktivitätsarmen Betrieb eines Leistungshalbleitermoduls an einem Gleichspannungskreis
US10250115B2 (en) 2016-11-02 2019-04-02 Ford Global Technologies, Llc Inverter switching devices with common source inductance layout to avoid shoot-through
US10410952B2 (en) 2016-12-15 2019-09-10 Infineon Technologies Ag Power semiconductor packages having a substrate with two or more metal layers and one or more polymer-based insulating layers for separating the metal layers
US10008411B2 (en) 2016-12-15 2018-06-26 Infineon Technologies Ag Parallel plate waveguide for power circuits
DE102017100528A1 (de) * 2017-01-12 2018-07-12 Danfoss Silicon Power Gmbh Leistungsmodul mit optimierter Anschlussstiftanordnung
US9813009B1 (en) 2017-02-07 2017-11-07 Ford Global Technologies, Llc Active gate clamping for inverter switching devices using grounded gate terminals
DE102017203053A1 (de) * 2017-02-24 2018-08-30 Siemens Aktiengesellschaft Vorrichtung zur Spannungsbegrenzung für ein Gleichspannungsnetz
EP3367567A1 (de) 2017-02-28 2018-08-29 Siemens Aktiengesellschaft Schaltvorrichtung zum auftrennen eines strompfads
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
JP6888456B2 (ja) * 2017-07-24 2021-06-16 富士電機株式会社 電力変換装置
DE102017117888A1 (de) * 2017-08-07 2019-02-07 Infineon Technologies Austria Ag Elektronische Schaltung mit einer Halbbrückenschaltung und einem Spannungsklemmelement
WO2019043886A1 (ja) * 2017-08-31 2019-03-07 東芝三菱電機産業システム株式会社 電力変換装置
EP3859778A1 (de) * 2020-02-03 2021-08-04 Siemens Aktiengesellschaft Schneller elektronischer schalter
EP3955717A1 (de) * 2020-08-14 2022-02-16 Siemens Aktiengesellschaft Multilevel-stromrichter mit optimierter topologie
US11678468B2 (en) * 2020-09-24 2023-06-13 Dana Tm4 Inc. High density power module
CN114884333B (zh) * 2022-07-08 2022-09-30 深圳芯能半导体技术有限公司 驱动电路、智能功率模块及电子设备

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JP2658427B2 (ja) 1989-01-17 1997-09-30 富士電機株式会社 電力変換用半導体素子のスナバ回路とそのモジュール装置
US5907475A (en) 1996-04-16 1999-05-25 Allen-Bradley Company, Llc Circuit board system having a mounted board and a plurality of mounting boards
DE19632173A1 (de) * 1996-08-09 1998-02-12 Asea Brown Boveri Stromrichterschaltungsanordnung
JP3633432B2 (ja) 2000-03-30 2005-03-30 株式会社日立製作所 半導体装置及び電力変換装置
US20050225955A1 (en) 2004-04-09 2005-10-13 Hewlett-Packard Development Company, L.P. Multi-layer printed circuit boards
JPWO2006003936A1 (ja) * 2004-07-01 2007-08-16 関西電力株式会社 スナバ回路及びスナバ回路を有するパワー半導体装置

Also Published As

Publication number Publication date
US20100328833A1 (en) 2010-12-30
EP2264894A1 (de) 2010-12-22
EP2264894B1 (de) 2011-10-12

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