ATE528856T1 - Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem - Google Patents
Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystemInfo
- Publication number
- ATE528856T1 ATE528856T1 AT09008091T AT09008091T ATE528856T1 AT E528856 T1 ATE528856 T1 AT E528856T1 AT 09008091 T AT09008091 T AT 09008091T AT 09008091 T AT09008091 T AT 09008091T AT E528856 T1 ATE528856 T1 AT E528856T1
- Authority
- AT
- Austria
- Prior art keywords
- power module
- current
- current path
- input
- transient current
- Prior art date
Links
- 230000001052 transient effect Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20090008091 EP2264894B1 (de) | 2009-06-19 | 2009-06-19 | Leistungsmodul mit zusätzlichem transientem Strompfad und Leistungsmodulsystem |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE528856T1 true ATE528856T1 (de) | 2011-10-15 |
Family
ID=41130387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09008091T ATE528856T1 (de) | 2009-06-19 | 2009-06-19 | Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100328833A1 (de) |
EP (1) | EP2264894B1 (de) |
AT (1) | ATE528856T1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8441128B2 (en) * | 2011-08-16 | 2013-05-14 | Infineon Technologies Ag | Semiconductor arrangement |
US8648643B2 (en) | 2012-02-24 | 2014-02-11 | Transphorm Inc. | Semiconductor power modules and devices |
DE102012217905B3 (de) | 2012-10-01 | 2013-11-07 | Semikron Elektronik Gmbh & Co. Kg | 3-Level-Stromrichterhalbbrücke |
DE102013213986B4 (de) | 2013-07-17 | 2016-02-04 | Siemens Aktiengesellschaft | Dreipunkt-Stromrichter |
JP6483963B2 (ja) * | 2014-06-11 | 2019-03-13 | 株式会社日立製作所 | 電力変換装置 |
DE102014109385A1 (de) * | 2014-07-04 | 2016-01-07 | Karlsruher Institut für Technologie | Elektronische Bauteilanordnung |
US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
WO2016131693A1 (en) | 2015-02-17 | 2016-08-25 | Koninklijke Philips N.V. | Ceramic substrate and method for producing a ceramic substrate |
JP6637065B2 (ja) | 2015-03-13 | 2020-01-29 | トランスフォーム インコーポレーテッド | 高電力回路のためのスイッチングデバイスの並列化 |
DE102015216083A1 (de) * | 2015-08-24 | 2017-03-02 | Siemens Aktiengesellschaft | Modulanordnung zum induktivitätsarmen Betrieb eines Leistungshalbleitermoduls an einem Gleichspannungskreis |
US10250115B2 (en) | 2016-11-02 | 2019-04-02 | Ford Global Technologies, Llc | Inverter switching devices with common source inductance layout to avoid shoot-through |
US10410952B2 (en) | 2016-12-15 | 2019-09-10 | Infineon Technologies Ag | Power semiconductor packages having a substrate with two or more metal layers and one or more polymer-based insulating layers for separating the metal layers |
US10008411B2 (en) | 2016-12-15 | 2018-06-26 | Infineon Technologies Ag | Parallel plate waveguide for power circuits |
DE102017100528A1 (de) * | 2017-01-12 | 2018-07-12 | Danfoss Silicon Power Gmbh | Leistungsmodul mit optimierter Anschlussstiftanordnung |
US9813009B1 (en) | 2017-02-07 | 2017-11-07 | Ford Global Technologies, Llc | Active gate clamping for inverter switching devices using grounded gate terminals |
DE102017203053A1 (de) * | 2017-02-24 | 2018-08-30 | Siemens Aktiengesellschaft | Vorrichtung zur Spannungsbegrenzung für ein Gleichspannungsnetz |
EP3367567A1 (de) | 2017-02-28 | 2018-08-29 | Siemens Aktiengesellschaft | Schaltvorrichtung zum auftrennen eines strompfads |
US10319648B2 (en) | 2017-04-17 | 2019-06-11 | Transphorm Inc. | Conditions for burn-in of high power semiconductors |
JP6888456B2 (ja) * | 2017-07-24 | 2021-06-16 | 富士電機株式会社 | 電力変換装置 |
DE102017117888A1 (de) * | 2017-08-07 | 2019-02-07 | Infineon Technologies Austria Ag | Elektronische Schaltung mit einer Halbbrückenschaltung und einem Spannungsklemmelement |
WO2019043886A1 (ja) * | 2017-08-31 | 2019-03-07 | 東芝三菱電機産業システム株式会社 | 電力変換装置 |
EP3859778A1 (de) * | 2020-02-03 | 2021-08-04 | Siemens Aktiengesellschaft | Schneller elektronischer schalter |
EP3955717A1 (de) * | 2020-08-14 | 2022-02-16 | Siemens Aktiengesellschaft | Multilevel-stromrichter mit optimierter topologie |
US11678468B2 (en) * | 2020-09-24 | 2023-06-13 | Dana Tm4 Inc. | High density power module |
CN114884333B (zh) * | 2022-07-08 | 2022-09-30 | 深圳芯能半导体技术有限公司 | 驱动电路、智能功率模块及电子设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2658427B2 (ja) | 1989-01-17 | 1997-09-30 | 富士電機株式会社 | 電力変換用半導体素子のスナバ回路とそのモジュール装置 |
US5907475A (en) | 1996-04-16 | 1999-05-25 | Allen-Bradley Company, Llc | Circuit board system having a mounted board and a plurality of mounting boards |
DE19632173A1 (de) * | 1996-08-09 | 1998-02-12 | Asea Brown Boveri | Stromrichterschaltungsanordnung |
JP3633432B2 (ja) | 2000-03-30 | 2005-03-30 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
US20050225955A1 (en) | 2004-04-09 | 2005-10-13 | Hewlett-Packard Development Company, L.P. | Multi-layer printed circuit boards |
JPWO2006003936A1 (ja) * | 2004-07-01 | 2007-08-16 | 関西電力株式会社 | スナバ回路及びスナバ回路を有するパワー半導体装置 |
-
2009
- 2009-06-19 EP EP20090008091 patent/EP2264894B1/de active Active
- 2009-06-19 AT AT09008091T patent/ATE528856T1/de not_active IP Right Cessation
-
2010
- 2010-06-17 US US12/817,637 patent/US20100328833A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20100328833A1 (en) | 2010-12-30 |
EP2264894A1 (de) | 2010-12-22 |
EP2264894B1 (de) | 2011-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |