ATE511100T1 - Vorrichtung und verfahren zum testen und zur beurteilung von elektromigration - Google Patents

Vorrichtung und verfahren zum testen und zur beurteilung von elektromigration

Info

Publication number
ATE511100T1
ATE511100T1 AT08737637T AT08737637T ATE511100T1 AT E511100 T1 ATE511100 T1 AT E511100T1 AT 08737637 T AT08737637 T AT 08737637T AT 08737637 T AT08737637 T AT 08737637T AT E511100 T1 ATE511100 T1 AT E511100T1
Authority
AT
Austria
Prior art keywords
electromigration
interconnect structure
testing
test
interconnect
Prior art date
Application number
AT08737637T
Other languages
English (en)
Inventor
Xavier Federspiel
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE511100T1 publication Critical patent/ATE511100T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT08737637T 2007-04-02 2008-03-27 Vorrichtung und verfahren zum testen und zur beurteilung von elektromigration ATE511100T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07290395A EP1978371A1 (de) 2007-04-02 2007-04-02 Vorrichtungen und Verfahren zur Überprüfung und Bewertung von Elektromigration
PCT/IB2008/051154 WO2008120151A1 (en) 2007-04-02 2008-03-27 Electromigration testing and evaluation apparatus and methods

Publications (1)

Publication Number Publication Date
ATE511100T1 true ATE511100T1 (de) 2011-06-15

Family

ID=38521191

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08737637T ATE511100T1 (de) 2007-04-02 2008-03-27 Vorrichtung und verfahren zum testen und zur beurteilung von elektromigration

Country Status (5)

Country Link
US (1) US8237458B2 (de)
EP (2) EP1978371A1 (de)
AT (1) ATE511100T1 (de)
TW (1) TW200907367A (de)
WO (1) WO2008120151A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006049791A1 (de) * 2006-10-21 2008-04-30 X-Fab Semiconductor Foundries Ag Teststruktur für hochbeschleunigte Elektromigrationstests für dicke Metallisierungssysteme von Festkörperschaltkreisen
US20110285401A1 (en) * 2010-05-21 2011-11-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for Determining the Lifetime of Interconnects
US8917104B2 (en) 2011-08-31 2014-12-23 International Business Machines Corporation Analyzing EM performance during IC manufacturing
FR2980584B1 (fr) 2011-09-23 2013-10-25 Commissariat Energie Atomique Procede d'estimation de la longueur de diffusion d'especes metalliques au sein d'une structure integree tridimensionnelle, et structure integree tridimensionnelle correspondante
US8890556B2 (en) * 2011-10-26 2014-11-18 International Business Machines Corporation Real-time on-chip EM performance monitoring
US8656325B2 (en) 2012-01-12 2014-02-18 International Business Machines Corporation Integrated circuit design method and system
US10732216B2 (en) 2012-10-30 2020-08-04 Fifth Electronics Research Institute Of Ministry Of Industry And Information Technology Method and device of remaining life prediction for electromigration failure
CN102955121B (zh) * 2012-10-30 2014-11-19 工业和信息化部电子第五研究所 一种电迁移失效的剩余寿命预测方法和装置
RU2573176C2 (ru) * 2014-02-06 2016-01-20 Открытое акционерное общество "Ангстрем-Т" Способ оценки надежности металлической разводки интегральных схем
US9506977B2 (en) 2014-03-04 2016-11-29 International Business Machines Corporation Application of stress conditions for homogenization of stress samples in semiconductor product acceleration studies
RU2567016C1 (ru) * 2014-06-19 2015-10-27 Открытое акционерное общество "Ангстрем-Т" Способ оценки электромиграционных параметров металлических проводников
US9952272B2 (en) 2014-12-10 2018-04-24 Arizona Board Of Regents On Behalf Of Arizona State University Fixture for in situ electromigration testing during X-ray microtomography
US9851397B2 (en) 2015-03-02 2017-12-26 Globalfoundries Inc. Electromigration testing of interconnect analogues having bottom-connected sensory pins
US10043720B2 (en) 2015-12-02 2018-08-07 Arizona Board Of Regents Systems and methods for interconnect simulation and characterization
US9472477B1 (en) 2015-12-17 2016-10-18 International Business Machines Corporation Electromigration test structure for Cu barrier integrity and blech effect evaluations
US10365322B2 (en) * 2016-04-19 2019-07-30 Analog Devices Global Wear-out monitor device
CN107607214B (zh) * 2017-09-13 2019-12-24 上海华力微电子有限公司 一种温度的测量方法及电迁移的测试方法
CN109470377B (zh) * 2018-11-12 2020-09-25 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 多层阻变存储器的温度分布测试方法
CN111007387A (zh) * 2019-12-07 2020-04-14 苏州容启传感器科技有限公司 一种测试芯片及集成方法
CN116298603B (zh) * 2023-02-02 2024-03-26 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 电迁移测试参数获取方法、***、计算机设备和存储介质

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497076A (en) * 1993-10-25 1996-03-05 Lsi Logic Corporation Determination of failure criteria based upon grain boundary electromigration in metal alloy films
TWI221908B (en) * 2002-06-25 2004-10-11 Infineon Technologies Ag Electromigration test apparatus and an electromigration test method
US6867056B1 (en) * 2002-10-30 2005-03-15 Advanced Micro Devices, Inc. System and method for current-enhanced stress-migration testing of interconnect

Also Published As

Publication number Publication date
EP2135102A1 (de) 2009-12-23
TW200907367A (en) 2009-02-16
EP2135102B1 (de) 2011-05-25
WO2008120151A1 (en) 2008-10-09
US8237458B2 (en) 2012-08-07
US20100127719A1 (en) 2010-05-27
EP1978371A1 (de) 2008-10-08

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