ATE509398T1 - Verfahren und vorrichtung zur erzeugung einer terahertz-strahlung - Google Patents

Verfahren und vorrichtung zur erzeugung einer terahertz-strahlung

Info

Publication number
ATE509398T1
ATE509398T1 AT08825821T AT08825821T ATE509398T1 AT E509398 T1 ATE509398 T1 AT E509398T1 AT 08825821 T AT08825821 T AT 08825821T AT 08825821 T AT08825821 T AT 08825821T AT E509398 T1 ATE509398 T1 AT E509398T1
Authority
AT
Austria
Prior art keywords
radiation
qcl
frequency
terahertz radiation
dfg
Prior art date
Application number
AT08825821T
Other languages
English (en)
Inventor
Mikhail Belkin
Federico Capasso
Alexey Belyanin
Original Assignee
Harvard College
Texas A & M Univ Sys
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College, Texas A & M Univ Sys filed Critical Harvard College
Application granted granted Critical
Publication of ATE509398T1 publication Critical patent/ATE509398T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
AT08825821T 2007-03-16 2008-03-14 Verfahren und vorrichtung zur erzeugung einer terahertz-strahlung ATE509398T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89525807P 2007-03-16 2007-03-16
PCT/US2008/003431 WO2008143737A2 (en) 2007-03-16 2008-03-14 Methods and apparatus for generating terahertz radiation

Publications (1)

Publication Number Publication Date
ATE509398T1 true ATE509398T1 (de) 2011-05-15

Family

ID=40032332

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08825821T ATE509398T1 (de) 2007-03-16 2008-03-14 Verfahren und vorrichtung zur erzeugung einer terahertz-strahlung

Country Status (6)

Country Link
US (2) US7974325B2 (de)
EP (1) EP2127047B1 (de)
JP (1) JP2010521815A (de)
CN (1) CN101730961A (de)
AT (1) ATE509398T1 (de)
WO (1) WO2008143737A2 (de)

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EP2127047B1 (de) * 2007-03-16 2011-05-11 The President and Fellows of Harvard College Verfahren und vorrichtung zur erzeugung einer terahertz-strahlung
US8238702B2 (en) * 2008-06-05 2012-08-07 Colorado School Of Mines Hybrid dielectric/surface plasmon polariton waveguide with grating coupling
JP2010080902A (ja) * 2008-08-29 2010-04-08 Nippon Germanium Kenkyusho:Kk ファイバ型発光素子
CN101713687B (zh) * 2009-11-17 2011-03-16 中国科学院上海微***与信息技术研究所 一种太赫兹波段的无线发射接收装置及其发射接收方法
JP5709562B2 (ja) 2010-03-04 2015-04-30 キヤノン株式会社 テラヘルツ波発生素子、およびテラヘルツ時間領域分光装置
JP5909089B2 (ja) * 2011-02-01 2016-04-26 アークレイ株式会社 光学結晶、テラヘルツ波発生装置及び方法
US9389344B2 (en) 2011-06-28 2016-07-12 Colorado School Of Mines Spectroscopic polarimeter
KR101897257B1 (ko) * 2012-05-14 2018-09-11 한국전자통신연구원 광 검출기 및 그를 구비한 광학 소자
EP2878044A4 (de) * 2012-07-24 2016-04-13 Univ Texas Terahertz-quantenkaskadenlaser mit differenzfrequenzerzeugung
JP6139327B2 (ja) * 2012-08-30 2017-05-31 アークレイ株式会社 テラヘルツ波分光測定装置及び方法、非線形光学結晶の検査装置及び方法
JP6124293B2 (ja) * 2013-04-16 2017-05-10 国立研究開発法人情報通信研究機構 テラヘルツ帯光素子導波路
WO2014189015A1 (ja) * 2013-05-23 2014-11-27 浜松ホトニクス株式会社 量子カスケードレーザ
JP6244668B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
JP6244667B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
CN103560395A (zh) * 2013-10-31 2014-02-05 北京工业大学 一种双波长输出光混频产生太赫兹波的半导体激光器及制造方法
US20160352072A1 (en) * 2014-02-04 2016-12-01 Board Of Regents, The University Of Texas System Monolithic tunable terahertz radiation source using nonlinear frequency mixing in quantum cascade lasers
US10230216B1 (en) 2014-05-02 2019-03-12 The United States of America as Represented by the Admin of the National Aeronautics and Space Administration Tunable multi-frequency terahertz quantum cascade laser source
US9733545B2 (en) * 2014-07-30 2017-08-15 Board Of Regents, The University Of Texas System Nonlinear metasurfaces based on plasmonic resonators coupled to intersubband transitions
CN104505458B (zh) * 2014-11-27 2017-10-20 南京大学 一种便携式连续可调太赫兹发生器
CN104538844B (zh) * 2015-01-27 2018-10-26 中国科学院上海微***与信息技术研究所 太赫兹量子级联激光器器件结构及其制作方法
JP6559000B2 (ja) 2015-07-29 2019-08-14 浜松ホトニクス株式会社 量子カスケードレーザ
JP6506663B2 (ja) 2015-08-31 2019-04-24 浜松ホトニクス株式会社 量子カスケードレーザ
JP2017050308A (ja) 2015-08-31 2017-03-09 浜松ホトニクス株式会社 量子カスケードレーザ
US9742151B1 (en) 2016-05-04 2017-08-22 Wisconsin Alumni Research Foundation Terahertz quantum cascade lasers
CN109196397B (zh) * 2016-09-06 2019-11-29 华为技术有限公司 用于生成单光子的器件及***、固定单光子源方法
EP3602700A4 (de) * 2017-03-24 2020-12-23 Macquarie University Verbesserungen an terahertzlasern und terahertzextraktion
CN108365518A (zh) * 2018-03-13 2018-08-03 中国科学院半导体研究所 差频太赫兹量子级联激光器
CN108923258B (zh) * 2018-07-12 2020-11-03 华南师范大学 太赫兹量子级联激光器中陷阱式双声子有源区能级结构的设计方法
CN110292711A (zh) * 2019-07-05 2019-10-01 鲍玉珍 用于老年人小脑萎缩疾病的太赫兹波理疗装置
JP6893591B1 (ja) * 2019-12-20 2021-06-23 浜松ホトニクス株式会社 レーザモジュール
JP7475924B2 (ja) * 2020-03-30 2024-04-30 浜松ホトニクス株式会社 量子カスケードレーザ
JP2021177520A (ja) * 2020-05-08 2021-11-11 浜松ホトニクス株式会社 量子カスケードレーザ素子
CN113589275B (zh) * 2021-07-01 2024-04-30 中国科学院国家空间科学中心 一种海面风场、海浪和海流的联合观测方法

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JP5084540B2 (ja) * 2008-02-06 2012-11-28 キヤノン株式会社 垂直共振器型面発光レーザ

Also Published As

Publication number Publication date
US7974325B2 (en) 2011-07-05
JP2010521815A (ja) 2010-06-24
EP2127047A2 (de) 2009-12-02
CN101730961A (zh) 2010-06-09
EP2127047B1 (de) 2011-05-11
WO2008143737A3 (en) 2009-09-17
US20110222564A1 (en) 2011-09-15
US20100135337A1 (en) 2010-06-03
WO2008143737A2 (en) 2008-11-27

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