ATE504076T1 - Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen - Google Patents
Verfahren zur steuerung der ionenenergie in radiofrequenzplasmenInfo
- Publication number
- ATE504076T1 ATE504076T1 AT08786101T AT08786101T ATE504076T1 AT E504076 T1 ATE504076 T1 AT E504076T1 AT 08786101 T AT08786101 T AT 08786101T AT 08786101 T AT08786101 T AT 08786101T AT E504076 T1 ATE504076 T1 AT E504076T1
- Authority
- AT
- Austria
- Prior art keywords
- plasms
- radio frequency
- ion energy
- controlling ion
- components
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3826308P | 2008-03-20 | 2008-03-20 | |
PCT/EP2008/059133 WO2009115135A1 (en) | 2008-03-20 | 2008-07-11 | Method for controlling ion energy in radio frequency plasmas |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE504076T1 true ATE504076T1 (de) | 2011-04-15 |
Family
ID=39831709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08786101T ATE504076T1 (de) | 2008-03-20 | 2008-07-11 | Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen |
Country Status (7)
Country | Link |
---|---|
US (2) | US8643280B2 (de) |
EP (2) | EP2249372B1 (de) |
CN (1) | CN101978461B (de) |
AT (1) | ATE504076T1 (de) |
DE (1) | DE602008005858D1 (de) |
TW (1) | TW200952560A (de) |
WO (1) | WO2009115135A1 (de) |
Families Citing this family (68)
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WO2009115135A1 (en) | 2008-03-20 | 2009-09-24 | RUHR-UNIVERSITäT BOCHUM | Method for controlling ion energy in radio frequency plasmas |
DE102009020436A1 (de) | 2008-11-04 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats |
US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
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US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
US9105447B2 (en) * | 2012-08-28 | 2015-08-11 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
JP6207880B2 (ja) * | 2012-09-26 | 2017-10-04 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
DE102014105445A1 (de) * | 2013-04-26 | 2014-10-30 | Mks Instruments Inc. | Frequenz- und Phasensteuerung einer Multi-Radiofrequenz-Leistungsversorgung |
US9336995B2 (en) | 2013-04-26 | 2016-05-10 | Mks Instruments, Inc. | Multiple radio frequency power supply control of frequency and phase |
US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
US20150107618A1 (en) * | 2013-10-21 | 2015-04-23 | Applied Materials, Inc. | Oxygen containing plasma cleaning to remove contamination from electronic device components |
KR102133895B1 (ko) * | 2013-11-06 | 2020-07-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Dc 바이어스 변조에 의한 입자 발생 억제기 |
FR3020718B1 (fr) | 2014-05-02 | 2016-06-03 | Ecole Polytech | Procede et systeme pour controler des flux d'ions dans un plasma rf. |
US9026407B1 (en) | 2014-10-16 | 2015-05-05 | Christine Marie Kennefick | Method of making and using a material model of elements with planar faces |
US9595424B2 (en) * | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
KR20170024922A (ko) * | 2015-08-26 | 2017-03-08 | 삼성전자주식회사 | 플라즈마 발생 장치 |
US10395895B2 (en) * | 2015-08-27 | 2019-08-27 | Mks Instruments, Inc. | Feedback control by RF waveform tailoring for ion energy distribution |
US10008366B2 (en) | 2015-09-08 | 2018-06-26 | Applied Materials, Inc. | Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing |
US9644271B1 (en) * | 2016-05-13 | 2017-05-09 | Lam Research Corporation | Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication |
US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
US10026592B2 (en) | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
JP6643212B2 (ja) * | 2016-09-16 | 2020-02-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
EP3309815B1 (de) * | 2016-10-12 | 2019-03-20 | Meyer Burger (Germany) AG | Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung |
US9812295B1 (en) | 2016-11-15 | 2017-11-07 | Lyten, Inc. | Microwave chemical processing |
US9767992B1 (en) | 2017-02-09 | 2017-09-19 | Lyten, Inc. | Microwave chemical processing reactor |
US9997334B1 (en) | 2017-02-09 | 2018-06-12 | Lyten, Inc. | Seedless particles with carbon allotropes |
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US10920035B2 (en) | 2017-03-16 | 2021-02-16 | Lyten, Inc. | Tuning deformation hysteresis in tires using graphene |
JP7018288B2 (ja) * | 2017-10-10 | 2022-02-10 | 東京エレクトロン株式会社 | 成膜方法 |
US10777386B2 (en) * | 2017-10-17 | 2020-09-15 | Lam Research Corporation | Methods for controlling plasma glow discharge in a plasma chamber |
JP7289313B2 (ja) * | 2017-11-17 | 2023-06-09 | エーイーエス グローバル ホールディングス, プライベート リミテッド | プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御 |
CN111788654B (zh) | 2017-11-17 | 2023-04-14 | 先进工程解决方案全球控股私人有限公司 | 等离子体处理***中的调制电源的改进应用 |
WO2019099870A1 (en) * | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Synchronized pulsing of plasma processing source and substrate bias |
WO2019126196A1 (en) | 2017-12-22 | 2019-06-27 | Lyten, Inc. | Structured composite materials |
EP3735582A4 (de) * | 2018-01-04 | 2021-11-10 | Lyten, Inc. | Resonanter gassensor |
WO2019143559A1 (en) | 2018-01-16 | 2019-07-25 | Lyten, Inc. | Microwave transparent pressure barrier |
US10304669B1 (en) * | 2018-01-21 | 2019-05-28 | Mks Instruments, Inc. | Adaptive counter measure control thwarting IMD jamming impairments for RF plasma systems |
TWI826925B (zh) * | 2018-03-01 | 2023-12-21 | 美商應用材料股份有限公司 | 電漿源組件和氣體分配組件 |
US20190311884A1 (en) * | 2018-04-04 | 2019-10-10 | Applied Materials, Inc. | Rf tailored voltage on bias operation |
CN111373504B (zh) * | 2018-04-04 | 2023-01-06 | 应用材料公司 | 偏置操作上的rf定制电压 |
US10998170B2 (en) * | 2018-04-13 | 2021-05-04 | Tokyo Electron Limited | Method for ion mass separation and ion energy control in process plasmas |
US20190318913A1 (en) * | 2018-04-13 | 2019-10-17 | Tokyo Electron Limited | Apparatus and Method for Controlling Ion Energy Distribution in Process Plasmas |
WO2019199635A1 (en) * | 2018-04-13 | 2019-10-17 | Tokyo Electron Limited | Apparatus and method for controlling ion energy distribution in process plasmas |
US10916409B2 (en) * | 2018-06-18 | 2021-02-09 | Lam Research Corporation | Active control of radial etch uniformity |
CN111092008A (zh) * | 2018-10-24 | 2020-05-01 | 江苏鲁汶仪器有限公司 | 一种感应耦合等离子体刻蚀设备及刻蚀方法 |
TW202109611A (zh) | 2019-07-12 | 2021-03-01 | 新加坡商Aes全球公司 | 具有單一控制開關之偏壓供應器 |
CN110310878B (zh) | 2019-08-28 | 2019-11-12 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器及其处理方法 |
JP7262375B2 (ja) * | 2019-11-26 | 2023-04-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
CN113035677B (zh) * | 2019-12-09 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备以及等离子体处理方法 |
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Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US5325019A (en) * | 1992-08-21 | 1994-06-28 | Sematech, Inc. | Control of plasma process by use of harmonic frequency components of voltage and current |
JP2001516963A (ja) * | 1997-09-17 | 2001-10-02 | 東京エレクトロン株式会社 | ガスプラズマ処理を監視しかつ管理するためのシステムおよび方法 |
DE60023964T2 (de) * | 1999-02-01 | 2006-06-22 | Ohmi, Tadahiro, Sendai | Laservorrichtung, Belichtungsapparat unter Verwendung derselben und Herstellungsverfahren |
US20030079983A1 (en) * | 2000-02-25 | 2003-05-01 | Maolin Long | Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources |
WO2002054835A2 (en) * | 2001-01-08 | 2002-07-11 | Tokyo Electron Limited | Addition of power at selected harmonics of plasma processor drive frequency |
JP4877884B2 (ja) * | 2001-01-25 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6841943B2 (en) | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
JP4773079B2 (ja) | 2004-11-26 | 2011-09-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法 |
JP4804824B2 (ja) * | 2005-07-27 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR100777151B1 (ko) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | 하이브리드형 플라즈마 반응장치 |
US7645357B2 (en) * | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
WO2009115135A1 (en) | 2008-03-20 | 2009-09-24 | RUHR-UNIVERSITäT BOCHUM | Method for controlling ion energy in radio frequency plasmas |
-
2008
- 2008-07-11 WO PCT/EP2008/059133 patent/WO2009115135A1/en active Application Filing
- 2008-07-11 EP EP10170734A patent/EP2249372B1/de not_active Not-in-force
- 2008-07-11 AT AT08786101T patent/ATE504076T1/de active
- 2008-07-11 CN CN200880128271.8A patent/CN101978461B/zh not_active Expired - Fee Related
- 2008-07-11 DE DE602008005858T patent/DE602008005858D1/de active Active
- 2008-07-11 EP EP08786101A patent/EP2122657B8/de active Active
- 2008-07-11 US US12/864,123 patent/US8643280B2/en not_active Expired - Fee Related
-
2009
- 2009-02-20 TW TW098105368A patent/TW200952560A/zh unknown
-
2013
- 2013-11-08 US US14/075,026 patent/US8933629B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200952560A (en) | 2009-12-16 |
US8933629B2 (en) | 2015-01-13 |
WO2009115135A1 (en) | 2009-09-24 |
EP2122657B1 (de) | 2011-03-30 |
CN101978461B (zh) | 2013-09-11 |
EP2122657B8 (de) | 2011-06-22 |
US8643280B2 (en) | 2014-02-04 |
US20140103808A1 (en) | 2014-04-17 |
DE602008005858D1 (de) | 2011-05-12 |
CN101978461A (zh) | 2011-02-16 |
EP2122657A1 (de) | 2009-11-25 |
US20110248634A1 (en) | 2011-10-13 |
EP2249372A1 (de) | 2010-11-10 |
EP2249372B1 (de) | 2013-01-02 |
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