ATE499745T1 - Auf nanometrischem oder mikrometrischem massstab vibrierende elektromechanische komponente mit verbessertem detektionsniveau - Google Patents
Auf nanometrischem oder mikrometrischem massstab vibrierende elektromechanische komponente mit verbessertem detektionsniveauInfo
- Publication number
- ATE499745T1 ATE499745T1 AT08805144T AT08805144T ATE499745T1 AT E499745 T1 ATE499745 T1 AT E499745T1 AT 08805144 T AT08805144 T AT 08805144T AT 08805144 T AT08805144 T AT 08805144T AT E499745 T1 ATE499745 T1 AT E499745T1
- Authority
- AT
- Austria
- Prior art keywords
- nanometric
- electromechanical component
- detection level
- improved detection
- vibrating
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2436—Disk resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
- H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Gyroscopes (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Geophysics And Detection Of Objects (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0758173A FR2921916B1 (fr) | 2007-10-09 | 2007-10-09 | Composant electromecanique vibrant a l'echelle nanometrique ou micrometrique a niveau de detection augmente |
PCT/EP2008/063468 WO2009047266A1 (fr) | 2007-10-09 | 2008-10-08 | Composant electromecanique vibrant a l'echelle nanometrique ou micrometrique a niveau de detection augmente |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE499745T1 true ATE499745T1 (de) | 2011-03-15 |
Family
ID=39447963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08805144T ATE499745T1 (de) | 2007-10-09 | 2008-10-08 | Auf nanometrischem oder mikrometrischem massstab vibrierende elektromechanische komponente mit verbessertem detektionsniveau |
Country Status (7)
Country | Link |
---|---|
US (1) | US8607630B2 (de) |
EP (1) | EP2201681B1 (de) |
JP (1) | JP2010540266A (de) |
AT (1) | ATE499745T1 (de) |
DE (1) | DE602008005177D1 (de) |
FR (1) | FR2921916B1 (de) |
WO (1) | WO2009047266A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8916942B2 (en) * | 2010-05-13 | 2014-12-23 | Valtion Teknillinen Tutkimuskeskus | Microelectromechanical resonator and a method for producing the same |
IT201700124320A1 (it) * | 2017-10-31 | 2019-05-01 | St Microelectronics Srl | Sistema di risonatore microelettromeccanico con migliorata stabilita' rispetto a variazioni di temperatura |
CN109617435A (zh) * | 2019-01-28 | 2019-04-12 | 北京航空航天大学 | 一种基于机械振动的电能变换电路和变换方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003290513A1 (en) * | 2002-08-07 | 2004-04-08 | Georgia Tech Research Corporation | Capacitive resonators and methods of fabrication |
FR2872501B1 (fr) * | 2004-07-01 | 2006-11-03 | Commissariat Energie Atomique | Microresonateur composite a forte deformation |
JP2006210843A (ja) * | 2005-01-31 | 2006-08-10 | Fujitsu Ltd | 可変キャパシタ及びその製造方法 |
US7578189B1 (en) * | 2006-05-10 | 2009-08-25 | Qualtre, Inc. | Three-axis accelerometers |
FR2906238B1 (fr) * | 2006-09-27 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation d'un composant electromecanique sur un substrat plan |
US7610809B2 (en) * | 2007-01-18 | 2009-11-03 | Freescale Semiconductor, Inc. | Differential capacitive sensor and method of making same |
-
2007
- 2007-10-09 FR FR0758173A patent/FR2921916B1/fr not_active Expired - Fee Related
-
2008
- 2008-10-08 EP EP08805144A patent/EP2201681B1/de not_active Not-in-force
- 2008-10-08 AT AT08805144T patent/ATE499745T1/de not_active IP Right Cessation
- 2008-10-08 DE DE602008005177T patent/DE602008005177D1/de active Active
- 2008-10-08 WO PCT/EP2008/063468 patent/WO2009047266A1/fr active Application Filing
- 2008-10-08 US US12/680,687 patent/US8607630B2/en active Active
- 2008-10-08 JP JP2010528386A patent/JP2010540266A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2009047266A1 (fr) | 2009-04-16 |
US8607630B2 (en) | 2013-12-17 |
JP2010540266A (ja) | 2010-12-24 |
US20100289096A1 (en) | 2010-11-18 |
EP2201681A1 (de) | 2010-06-30 |
DE602008005177D1 (de) | 2011-04-07 |
FR2921916B1 (fr) | 2011-04-29 |
FR2921916A1 (fr) | 2009-04-10 |
EP2201681B1 (de) | 2011-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |