ATE498901T1 - Endpunkterkennung für die atzung von photomasken - Google Patents
Endpunkterkennung für die atzung von photomaskenInfo
- Publication number
- ATE498901T1 ATE498901T1 AT07021045T AT07021045T ATE498901T1 AT E498901 T1 ATE498901 T1 AT E498901T1 AT 07021045 T AT07021045 T AT 07021045T AT 07021045 T AT07021045 T AT 07021045T AT E498901 T1 ATE498901 T1 AT E498901T1
- Authority
- AT
- Austria
- Prior art keywords
- endpoint detection
- etching
- photomask
- support member
- substrate support
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000012544 monitoring process Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000691 measurement method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Weting (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86349006P | 2006-10-30 | 2006-10-30 | |
US11/844,868 US20080099436A1 (en) | 2006-10-30 | 2007-08-24 | Endpoint detection for photomask etching |
US11/844,838 US20080099435A1 (en) | 2006-10-30 | 2007-08-24 | Endpoint detection for photomask etching |
US96932807P | 2007-08-31 | 2007-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE498901T1 true ATE498901T1 (de) | 2011-03-15 |
Family
ID=39279419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07021045T ATE498901T1 (de) | 2006-10-30 | 2007-10-26 | Endpunkterkennung für die atzung von photomasken |
Country Status (7)
Country | Link |
---|---|
EP (2) | EP1926125B1 (de) |
JP (1) | JP5441332B2 (de) |
KR (1) | KR100932574B1 (de) |
CN (2) | CN104614932A (de) |
AT (1) | ATE498901T1 (de) |
DE (1) | DE602007012503D1 (de) |
TW (1) | TWI388936B (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080099450A1 (en) * | 2006-10-30 | 2008-05-01 | Applied Materials, Inc. | Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution |
KR101631615B1 (ko) * | 2008-12-31 | 2016-06-17 | 엘지디스플레이 주식회사 | 롤 프린트용 인쇄판의 제조방법 및 이를 이용한 액정표시장치의 제조방법 |
US9347132B2 (en) * | 2011-04-29 | 2016-05-24 | Applied Materials, Inc. | Optical endpoint detection system |
JP2012253142A (ja) * | 2011-06-01 | 2012-12-20 | Shibaura Mechatronics Corp | 基板の製造装置および基板の製造方法 |
US9887071B2 (en) * | 2011-12-16 | 2018-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-zone EPD detectors |
US8900469B2 (en) * | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
TWI582837B (zh) | 2012-06-11 | 2017-05-11 | 應用材料股份有限公司 | 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定 |
CN103943447B (zh) * | 2013-01-17 | 2017-02-08 | 中微半导体设备(上海)有限公司 | 一种等离子处理装置及其处理方法 |
CN103472542B (zh) * | 2013-09-13 | 2016-01-20 | 河南仕佳光子科技有限公司 | 用于定位光纤阵列的梯形槽的制作方法 |
US9299614B2 (en) * | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
CN104733336B (zh) * | 2013-12-19 | 2017-11-03 | 中微半导体设备(上海)有限公司 | 等离子体去胶工艺的终点检测***和方法 |
CN103811291B (zh) | 2013-12-20 | 2018-01-23 | 京东方科技集团股份有限公司 | 一种阵列基板制作方法、膜层刻蚀防损伤监控方法及设备 |
JP6329790B2 (ja) * | 2014-03-25 | 2018-05-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
DE102014115708A1 (de) * | 2014-10-29 | 2016-05-04 | Aixtron Se | Verfahren zum Trennen einer Kohlenstoffstruktur von einer Keimstruktur |
TWI795918B (zh) | 2015-01-15 | 2023-03-11 | 美商Mks儀器公司 | 製造測量裝置之方法 |
US9953886B2 (en) * | 2015-08-21 | 2018-04-24 | Microchip Technology Incorporated | Single-wafer real-time etch rate and uniformity predictor for plasma etch processes |
US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
WO2017142523A1 (en) | 2016-02-17 | 2017-08-24 | Accustrata, Inc. | System and method for monitoring atomic absorption during a surface modification process |
US10184183B2 (en) * | 2016-06-21 | 2019-01-22 | Applied Materials, Inc. | Substrate temperature monitoring |
CN107546141B (zh) * | 2016-06-28 | 2020-12-04 | 中微半导体设备(上海)股份有限公司 | 监测等离子体工艺制程的装置和方法 |
CN107546094B (zh) * | 2016-06-28 | 2019-05-03 | 中微半导体设备(上海)股份有限公司 | 监测等离子体工艺制程的等离子体处理装置和方法 |
CN107644811B (zh) * | 2016-07-20 | 2020-05-22 | 中微半导体设备(上海)股份有限公司 | 博世工艺的刻蚀终点监测方法以及博世刻蚀方法 |
CN107993946B (zh) * | 2016-10-27 | 2020-11-20 | 中微半导体设备(上海)股份有限公司 | 宽带光谱光学测量装置及等离子体处理装置 |
JP6820717B2 (ja) * | 2016-10-28 | 2021-01-27 | 株式会社日立ハイテク | プラズマ処理装置 |
JP6808596B2 (ja) * | 2017-03-10 | 2021-01-06 | キオクシア株式会社 | センシングシステム |
US11022877B2 (en) * | 2017-03-13 | 2021-06-01 | Applied Materials, Inc. | Etch processing system having reflective endpoint detection |
KR101966806B1 (ko) * | 2017-09-01 | 2019-04-09 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN108461412A (zh) * | 2018-03-22 | 2018-08-28 | 北京北方华创微电子装备有限公司 | 在线监测***及半导体加工设备 |
TWI659258B (zh) * | 2018-05-23 | 2019-05-11 | 亞智科技股份有限公司 | 蝕刻時間偵測方法及蝕刻時間偵測系統 |
US10978278B2 (en) * | 2018-07-31 | 2021-04-13 | Tokyo Electron Limited | Normal-incident in-situ process monitor sensor |
US10867110B2 (en) * | 2018-11-06 | 2020-12-15 | Samsung Electronics Co., Ltd. | Method of fabricating a semiconductor device |
CN113447243B (zh) * | 2020-05-26 | 2023-03-10 | 重庆康佳光电技术研究院有限公司 | 一种终点检测装置、蚀刻设备以及检测方法 |
CN111975191B (zh) * | 2020-08-17 | 2023-01-24 | 北京中科镭特电子有限公司 | 一种加工腔组件及激光加工装置 |
CN112078237B (zh) * | 2020-08-25 | 2022-05-27 | 北京黎马敦太平洋包装有限公司 | 一种具有自动烫印质量检测装置的烫印*** |
CN117043545A (zh) * | 2021-05-20 | 2023-11-10 | 应用材料公司 | 原位膜生长传感器组件、设备及方法 |
CN115097570B (zh) * | 2022-08-22 | 2023-04-07 | 上海羲禾科技有限公司 | 一种波导的刻蚀方法 |
CN117270317B (zh) * | 2023-11-20 | 2024-02-09 | 深圳市龙图光罩股份有限公司 | 图形辅助的干法刻蚀装置及方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS625107A (ja) * | 1985-07-01 | 1987-01-12 | Nippon Kogaku Kk <Nikon> | レジストパタ−ン測定装置 |
JPH08316279A (ja) * | 1995-02-14 | 1996-11-29 | Internatl Business Mach Corp <Ibm> | 半導体基体の厚さ測定方法及びその測定装置 |
JPH10298787A (ja) * | 1997-04-25 | 1998-11-10 | Shibaura Eng Works Co Ltd | ドライエッチング装置 |
JP2000200783A (ja) * | 1999-01-06 | 2000-07-18 | Hitachi Ltd | プラズマ処理装置および方法 |
US6251217B1 (en) | 1999-01-27 | 2001-06-26 | Applied Materials, Inc. | Reticle adapter for a reactive ion etch system |
JP2001176851A (ja) | 1999-12-15 | 2001-06-29 | Matsushita Electric Ind Co Ltd | ドライエッチング装置およびドライエッチングの終点検出方法 |
US6534756B1 (en) | 2000-06-22 | 2003-03-18 | Applied Materials Inc. | Ultra-stable, compact, high intensity fiber-coupled light source for use in monitoring and process control |
JP3924427B2 (ja) | 2000-12-14 | 2007-06-06 | 松下電器産業株式会社 | ドライエッチング方法及び装置 |
JP2002270588A (ja) * | 2001-03-09 | 2002-09-20 | Sony Corp | エッチング装置およびエッチング方法 |
JP2003232678A (ja) * | 2002-02-08 | 2003-08-22 | Olympus Optical Co Ltd | 光強度測定装置 |
TWI303090B (en) * | 2002-08-13 | 2008-11-11 | Lam Res Corp | Method for in-situ monitoring of patterned substrate processing using reflectometry |
US8257546B2 (en) * | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
US7077973B2 (en) * | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
US6905624B2 (en) * | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
US7158221B2 (en) * | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
-
2007
- 2007-10-26 TW TW096140359A patent/TWI388936B/zh active
- 2007-10-26 AT AT07021045T patent/ATE498901T1/de not_active IP Right Cessation
- 2007-10-26 EP EP07021045A patent/EP1926125B1/de not_active Not-in-force
- 2007-10-26 DE DE602007012503T patent/DE602007012503D1/de active Active
- 2007-10-26 JP JP2007278649A patent/JP5441332B2/ja active Active
- 2007-10-26 CN CN201510024454.7A patent/CN104614932A/zh active Pending
- 2007-10-26 CN CNA2007101653556A patent/CN101174082A/zh active Pending
- 2007-10-26 KR KR1020070108159A patent/KR100932574B1/ko active IP Right Grant
- 2007-10-26 EP EP11152646A patent/EP2309533A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR100932574B1 (ko) | 2009-12-17 |
EP1926125B1 (de) | 2011-02-16 |
EP1926125A1 (de) | 2008-05-28 |
KR20080039251A (ko) | 2008-05-07 |
EP2309533A1 (de) | 2011-04-13 |
JP2008112167A (ja) | 2008-05-15 |
DE602007012503D1 (de) | 2011-03-31 |
CN101174082A (zh) | 2008-05-07 |
CN104614932A (zh) | 2015-05-13 |
TWI388936B (zh) | 2013-03-11 |
JP5441332B2 (ja) | 2014-03-12 |
TW200844667A (en) | 2008-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |