ATE495553T1 - METHOD FOR PRODUCING A STRUCTURED SEMICONDUCTOR FILM - Google Patents

METHOD FOR PRODUCING A STRUCTURED SEMICONDUCTOR FILM

Info

Publication number
ATE495553T1
ATE495553T1 AT00959768T AT00959768T ATE495553T1 AT E495553 T1 ATE495553 T1 AT E495553T1 AT 00959768 T AT00959768 T AT 00959768T AT 00959768 T AT00959768 T AT 00959768T AT E495553 T1 ATE495553 T1 AT E495553T1
Authority
AT
Austria
Prior art keywords
providing
gate dielectric
contiguous
electrode
substrate
Prior art date
Application number
AT00959768T
Other languages
German (de)
Inventor
Karl Amundson
Paul Drzaic
Jianna Wang
Gregg Duthaler
Peter Kazlas
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/621,000 external-priority patent/US6842657B1/en
Application filed by E Ink Corp filed Critical E Ink Corp
Priority claimed from PCT/US2000/024091 external-priority patent/WO2001017041A1/en
Application granted granted Critical
Publication of ATE495553T1 publication Critical patent/ATE495553T1/en

Links

Abstract

PROBLEM TO BE SOLVED: To provide a method of patterning a semiconductor film in manufacturing of a transistor array which is used in a display device.SOLUTION: A method of manufacturing a transistor includes a step for providing a substrate, a step for providing a gate electrode contiguous to the substrate, a step for providing a gate dielectric contiguous to the substrate and the gate electrode, a step for providing a source electrode and a drain electrode contiguous to the gate dielectric, a step for providing a mask contiguous to the gate dielectric in such a pattern as the source electrode, the drain electrode and a part of the gate dielectric remain exposed, and a step for providing a semiconductor layer containing an organic semiconductor and one of multiple inorganic colloidal particles contiguously to the source electrode, the drain electrode, a part of the gate dielectric, and the mask.
AT00959768T 1999-08-31 2000-08-31 METHOD FOR PRODUCING A STRUCTURED SEMICONDUCTOR FILM ATE495553T1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15171599P 1999-08-31 1999-08-31
US15171699P 1999-08-31 1999-08-31
US09/621,000 US6842657B1 (en) 1999-04-09 2000-07-21 Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication
PCT/US2000/024091 WO2001017041A1 (en) 1999-08-31 2000-08-31 Method for forming a patterned semiconductor film

Publications (1)

Publication Number Publication Date
ATE495553T1 true ATE495553T1 (en) 2011-01-15

Family

ID=43426167

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00959768T ATE495553T1 (en) 1999-08-31 2000-08-31 METHOD FOR PRODUCING A STRUCTURED SEMICONDUCTOR FILM

Country Status (3)

Country Link
JP (1) JP5677266B2 (en)
AT (1) ATE495553T1 (en)
DE (1) DE60045513D1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937494B2 (en) * 1977-05-27 1984-09-10 三菱電機株式会社 Thin film pattern formation method
JPH03159175A (en) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd Liquid crystal display device
JPH03159134A (en) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd Manufacture of liquid crystal display device
JPH04199638A (en) * 1990-11-29 1992-07-20 Ricoh Co Ltd Field effect transistor, display device using the same and manufacture thereof
JPH0821718B2 (en) * 1992-07-30 1996-03-04 日本電気株式会社 Field effect transistor and method of manufacturing the same
US6124851A (en) * 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
JPH09116163A (en) * 1995-10-23 1997-05-02 Sharp Corp Field effect transistor, and its manufacture

Also Published As

Publication number Publication date
JP2012028818A (en) 2012-02-09
JP5677266B2 (en) 2015-02-25
DE60045513D1 (en) 2011-02-24

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