ATE495547T1 - BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF - Google Patents

BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF

Info

Publication number
ATE495547T1
ATE495547T1 AT06701807T AT06701807T ATE495547T1 AT E495547 T1 ATE495547 T1 AT E495547T1 AT 06701807 T AT06701807 T AT 06701807T AT 06701807 T AT06701807 T AT 06701807T AT E495547 T1 ATE495547 T1 AT E495547T1
Authority
AT
Austria
Prior art keywords
region
bipolar transistor
collector
base
base region
Prior art date
Application number
AT06701807T
Other languages
German (de)
Inventor
Johannes Donkers
Noort Wibo Van
Philippe Meunier-Beillard
Sebastien Nuttinck
Erwin Hijzen
Francois Neuilly
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE495547T1 publication Critical patent/ATE495547T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Consistent with an example embodiment, there is a bipolar transistor with a reduced collector series resistance integrated in a trench of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region manufactured in one fabrication step, therefore having a shorter conductive path with a reduced collector series resistance, improving the high frequency performance of the bipolar transistor. The bipolar transistor further includes a base region with a first part on a selected portion of the collector region (6, 34), which is on the bottom of the trench, and an emitter region on a selected portion of the first part of the base region. A base contact electrically contacts the base region on a second part of the base region, which is on an insulating region. The collector region is electrically contacted on top of a protrusion with a collector contact.
AT06701807T 2005-01-18 2006-01-12 BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF ATE495547T1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05100274 2005-01-18
EP05103967 2005-05-12
PCT/IB2006/050107 WO2006077502A1 (en) 2005-01-18 2006-01-12 Bipolar transistor and method of fabricating the same

Publications (1)

Publication Number Publication Date
ATE495547T1 true ATE495547T1 (en) 2011-01-15

Family

ID=36283955

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06701807T ATE495547T1 (en) 2005-01-18 2006-01-12 BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF

Country Status (7)

Country Link
US (1) US7906403B2 (en)
EP (1) EP1842229B1 (en)
JP (1) JP2008527734A (en)
AT (1) ATE495547T1 (en)
DE (1) DE602006019549D1 (en)
TW (1) TW200639944A (en)
WO (1) WO2006077502A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010020897A1 (en) * 2008-08-19 2010-02-25 Nxp B.V. Gringo heterojunction bipolar transistor with a metal extrinsic base region
EP2458624A1 (en) * 2010-11-26 2012-05-30 Nxp B.V. Heterojunction Bipolar Transistor Manufacturing Method and Integrated Circuit Comprising a Heterojunction Bipolar Transistor
US9553145B2 (en) * 2014-09-03 2017-01-24 Globalfoundries Inc. Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness
US9842834B2 (en) * 2015-12-21 2017-12-12 Marko Koricic Horizontal current bipolar transistors with improved breakdown voltages
US9799603B2 (en) * 2016-01-27 2017-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US9935186B1 (en) * 2016-09-21 2018-04-03 International Business Machines Corporation Method of manufacturing SOI lateral Si-emitter SiGe base HBT
EP3664151A1 (en) * 2018-12-06 2020-06-10 Nexperia B.V. Bipolar transistor with polysilicon emitter and method of manufacturing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333227A (en) * 1979-11-29 1982-06-08 International Business Machines Corporation Process for fabricating a self-aligned micrometer bipolar transistor device
US4982257A (en) * 1988-08-01 1991-01-01 International Business Machines Corporation Vertical bipolar transistor with collector and base extensions
JP2971246B2 (en) 1992-04-15 1999-11-02 株式会社東芝 Method for manufacturing hetero bipolar transistor
US5234846A (en) * 1992-04-30 1993-08-10 International Business Machines Corporation Method of making bipolar transistor with reduced topography
US6506657B1 (en) * 2000-04-19 2003-01-14 National Semiconductor Corporation Process for forming damascene-type isolation structure for BJT device formed in trench
US6548364B2 (en) * 2001-03-29 2003-04-15 Sharp Laboratories Of America, Inc. Self-aligned SiGe HBT BiCMOS on SOI substrate and method of fabricating the same
WO2002080281A1 (en) * 2001-04-02 2002-10-10 The Regent Of The University Of California Horizontal current bipolar transistor
AU2003232968A1 (en) 2002-05-29 2003-12-12 Koninklijke Philips Electronics N.V. Method of fabrication sige heterojunction bipolar transistor
FR2845522A1 (en) * 2002-10-03 2004-04-09 St Microelectronics Sa INTEGRATED HIGHLY CONDUCTIVE LAYER CIRCUIT
KR100604527B1 (en) * 2003-12-31 2006-07-24 동부일렉트로닉스 주식회사 Method for fabricating bipolar transistor
US7342293B2 (en) * 2005-12-05 2008-03-11 International Business Machines Corporation Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same

Also Published As

Publication number Publication date
US20100025808A1 (en) 2010-02-04
EP1842229A1 (en) 2007-10-10
TW200639944A (en) 2006-11-16
JP2008527734A (en) 2008-07-24
EP1842229B1 (en) 2011-01-12
DE602006019549D1 (en) 2011-02-24
WO2006077502A1 (en) 2006-07-27
US7906403B2 (en) 2011-03-15

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Legal Events

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