ATE462200T1 - Bildung von solarzellen auf foliensubstraten - Google Patents
Bildung von solarzellen auf foliensubstratenInfo
- Publication number
- ATE462200T1 ATE462200T1 AT05796064T AT05796064T ATE462200T1 AT E462200 T1 ATE462200 T1 AT E462200T1 AT 05796064 T AT05796064 T AT 05796064T AT 05796064 T AT05796064 T AT 05796064T AT E462200 T1 ATE462200 T1 AT E462200T1
- Authority
- AT
- Austria
- Prior art keywords
- formation
- solar cells
- film substrates
- substrate
- absorber layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000006096 absorbing agent Substances 0.000 abstract 3
- 239000011888 foil Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/943,658 US7858151B2 (en) | 2004-02-19 | 2004-09-18 | Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment |
US10/943,685 US20060060237A1 (en) | 2004-09-18 | 2004-09-18 | Formation of solar cells on foil substrates |
PCT/US2005/032151 WO2006033858A1 (en) | 2004-09-18 | 2005-09-06 | Formation of solar cells on foil substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE462200T1 true ATE462200T1 (de) | 2010-04-15 |
Family
ID=36072640
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05796064T ATE462200T1 (de) | 2004-09-18 | 2005-09-06 | Bildung von solarzellen auf foliensubstraten |
AT10003020T ATE540428T1 (de) | 2004-09-18 | 2005-09-06 | Bildung von solarzellen auf foliensubstraten |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10003020T ATE540428T1 (de) | 2004-09-18 | 2005-09-06 | Bildung von solarzellen auf foliensubstraten |
Country Status (6)
Country | Link |
---|---|
US (3) | US20060060237A1 (de) |
EP (2) | EP2348540B1 (de) |
CN (2) | CN102136522A (de) |
AT (2) | ATE462200T1 (de) |
DE (1) | DE602005020174D1 (de) |
ES (2) | ES2342091T3 (de) |
Families Citing this family (39)
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---|---|---|---|---|
US8642455B2 (en) * | 2004-02-19 | 2014-02-04 | Matthew R. Robinson | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
US8613973B2 (en) | 2007-12-06 | 2013-12-24 | International Business Machines Corporation | Photovoltaic device with solution-processed chalcogenide absorber layer |
EP2232576A2 (de) * | 2007-12-06 | 2010-09-29 | Craig Leidholm | Verfahren und einrichtungen zum verarbeiten einer vorläuferschicht in einer gruppe über umwelt |
EP2268855A1 (de) * | 2008-03-18 | 2011-01-05 | Solexant Corp. | Verbesserter rückkontakt in dünnen solarzellen |
US8410357B2 (en) * | 2008-03-18 | 2013-04-02 | Solexant Corp. | Back contact for thin film solar cells |
AU2009229339A1 (en) * | 2008-03-26 | 2009-10-01 | Solexant Corp. | Improved junctions in substrate solar cells |
JP2009259872A (ja) * | 2008-04-11 | 2009-11-05 | Rohm Co Ltd | 光電変換装置およびその製造方法、および固体撮像装置 |
US20100059385A1 (en) * | 2008-09-06 | 2010-03-11 | Delin Li | Methods for fabricating thin film solar cells |
US8418418B2 (en) | 2009-04-29 | 2013-04-16 | 3Form, Inc. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
US8067262B2 (en) * | 2009-08-04 | 2011-11-29 | Precursor Energetics, Inc. | Polymeric precursors for CAIGS silver-containing photovoltaics |
US8512603B2 (en) * | 2009-08-04 | 2013-08-20 | Precursor Energetics, Inc. | Polymeric precursors for CIS and CIGS photovoltaics |
CA2768612A1 (en) * | 2009-08-04 | 2011-02-10 | Precursor Energetics, Inc. | Methods for photovoltaic absorbers with controlled stoichiometry |
AU2010279662A1 (en) * | 2009-08-04 | 2012-03-01 | Precursor Energetics, Inc. | Polymeric precursors for CAIGAS aluminum-containing photovoltaics |
US8575471B2 (en) * | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
US8961687B2 (en) * | 2009-08-31 | 2015-02-24 | Alliance For Sustainable Energy, Llc | Lattice matched crystalline substrates for cubic nitride semiconductor growth |
KR102321565B1 (ko) | 2009-09-24 | 2021-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
WO2011084171A1 (en) * | 2009-12-17 | 2011-07-14 | Precursor Energetics, Inc. | Molecular precursors for optoelectronics |
US8507365B2 (en) * | 2009-12-21 | 2013-08-13 | Alliance For Sustainable Energy, Llc | Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates |
CN101838788A (zh) * | 2010-05-06 | 2010-09-22 | 深圳丹邦投资集团有限公司 | 一种原位生长Cu2SixSn1-xS3光伏薄膜的方法 |
CN101882640B (zh) * | 2010-06-28 | 2011-08-10 | 普尼太阳能(杭州)有限公司 | 一种CuInSe2基薄膜太阳能电池 |
TW201203584A (en) | 2010-07-02 | 2012-01-16 | Adpv Technology Ltd | Rapid thermal process heating system and method thereof |
WO2012037389A2 (en) | 2010-09-15 | 2012-03-22 | Precursor Energetics, Inc. | Inks with alkali metals for thin film solar cell processes |
US8748216B2 (en) | 2010-10-25 | 2014-06-10 | Imra America, Inc. | Non-vacuum method for fabrication of a photovoltaic absorber layer |
US8409906B2 (en) | 2010-10-25 | 2013-04-02 | Imra America, Inc. | Non-vacuum method for fabrication of a photovoltaic absorber layer |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
US8343267B2 (en) * | 2011-02-18 | 2013-01-01 | Rohm And Haas Electronic Materials Llc | Gallium formulated ink and methods of making and using same |
EP2720279A4 (de) * | 2011-06-13 | 2014-12-24 | Posco | Solarzellensubstrat und solarzelle damit |
JP5536153B2 (ja) * | 2011-09-16 | 2014-07-02 | 新日光能源科技股▲ふん▼有限公司 | カルコゲナイド半導体膜の形成方法及び光起電力装置 |
CN102412319A (zh) * | 2011-09-30 | 2012-04-11 | 陈聪茂 | 一种制作在金属薄膜的砷化镓高效能太阳能电池及其制作方法 |
JP6002207B2 (ja) * | 2012-02-27 | 2016-10-05 | 株式会社日本マイクロニクス | Cigs系太陽電池用合金の作製方法 |
MA20150060A1 (fr) * | 2012-02-29 | 2015-02-27 | Abengoa Solar New Tech Sa | Systèmes et procédés de formation de cellules solaires avec des films cuinse2 et cu(in,ga)se |
CN103296129A (zh) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | 柔性cigs太阳电池背电极层的制备工艺 |
CN104737301B (zh) * | 2012-07-19 | 2017-03-01 | 法国圣戈班玻璃厂 | 在热工艺中玻璃弯曲的避免 |
US9130113B2 (en) | 2012-12-14 | 2015-09-08 | Tsmc Solar Ltd. | Method and apparatus for resistivity and transmittance optimization in TCO solar cell films |
CN103268899B (zh) * | 2012-12-18 | 2015-10-28 | 深圳首创光伏有限公司 | 制造薄膜太阳能电池的方法 |
US9105799B2 (en) * | 2013-06-10 | 2015-08-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
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-
2004
- 2004-09-18 US US10/943,685 patent/US20060060237A1/en not_active Abandoned
-
2005
- 2005-09-06 CN CN2010105225893A patent/CN102136522A/zh active Pending
- 2005-09-06 CN CN2005800369091A patent/CN101061588B/zh not_active Expired - Fee Related
- 2005-09-06 EP EP10184761A patent/EP2348540B1/de not_active Not-in-force
- 2005-09-06 AT AT05796064T patent/ATE462200T1/de not_active IP Right Cessation
- 2005-09-06 ES ES05796064T patent/ES2342091T3/es active Active
- 2005-09-06 EP EP10003020A patent/EP2230693B1/de not_active Not-in-force
- 2005-09-06 DE DE602005020174T patent/DE602005020174D1/de active Active
- 2005-09-06 ES ES10003020T patent/ES2380564T3/es active Active
- 2005-09-06 AT AT10003020T patent/ATE540428T1/de active
-
2009
- 2009-05-07 US US12/437,532 patent/US20090305455A1/en not_active Abandoned
-
2012
- 2012-08-31 US US13/602,023 patent/US20120329195A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101061588B (zh) | 2010-12-22 |
EP2230693A1 (de) | 2010-09-22 |
CN102136522A (zh) | 2011-07-27 |
ATE540428T1 (de) | 2012-01-15 |
US20090305455A1 (en) | 2009-12-10 |
ES2380564T3 (es) | 2012-05-16 |
CN101061588A (zh) | 2007-10-24 |
EP2348540A2 (de) | 2011-07-27 |
ES2342091T3 (es) | 2010-07-01 |
US20120329195A1 (en) | 2012-12-27 |
DE602005020174D1 (de) | 2010-05-06 |
EP2230693B1 (de) | 2012-01-04 |
EP2348540A3 (de) | 2011-11-09 |
US20060060237A1 (en) | 2006-03-23 |
EP2348540B1 (de) | 2013-02-13 |
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