ATE438922T1 - Vorrichtung zum erzeugen eines stromes von ladungsträgern - Google Patents

Vorrichtung zum erzeugen eines stromes von ladungsträgern

Info

Publication number
ATE438922T1
ATE438922T1 AT00302144T AT00302144T ATE438922T1 AT E438922 T1 ATE438922 T1 AT E438922T1 AT 00302144 T AT00302144 T AT 00302144T AT 00302144 T AT00302144 T AT 00302144T AT E438922 T1 ATE438922 T1 AT E438922T1
Authority
AT
Austria
Prior art keywords
charge carriers
generating
flow
source
nanometre
Prior art date
Application number
AT00302144T
Other languages
English (en)
Inventor
Haroon Ahmed
David Hasko
Alex Driskill-Smith
David Arfon Williams
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of ATE438922T1 publication Critical patent/ATE438922T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
AT00302144T 2000-03-16 2000-03-16 Vorrichtung zum erzeugen eines stromes von ladungsträgern ATE438922T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00302144A EP1134771B1 (de) 2000-03-16 2000-03-16 Vorrichtung zum Erzeugen eines Stromes von Ladungsträgern

Publications (1)

Publication Number Publication Date
ATE438922T1 true ATE438922T1 (de) 2009-08-15

Family

ID=8172796

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00302144T ATE438922T1 (de) 2000-03-16 2000-03-16 Vorrichtung zum erzeugen eines stromes von ladungsträgern

Country Status (4)

Country Link
US (1) US6771012B2 (de)
EP (1) EP1134771B1 (de)
AT (1) ATE438922T1 (de)
DE (1) DE60042679D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649431B2 (en) * 2001-02-27 2003-11-18 Ut. Battelle, Llc Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases
JP4830217B2 (ja) * 2001-06-18 2011-12-07 日本電気株式会社 電界放出型冷陰極およびその製造方法
US6958475B1 (en) * 2003-01-09 2005-10-25 Colby Steven M Electron source
US20060184843A1 (en) * 2003-02-14 2006-08-17 Oakley William S Data recording using carbon nanotube electron sources
JP4219724B2 (ja) * 2003-04-08 2009-02-04 三菱電機株式会社 冷陰極発光素子の製造方法
US8305861B2 (en) * 2003-07-03 2012-11-06 Oakley William S Adaptive read and read-after-write for carbon nanotube recorders
US7279686B2 (en) * 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
KR20060011668A (ko) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
EP1982346A4 (de) * 2006-02-02 2014-05-07 Cebt Co Ltd Einrichtung zum aufrechterhalten von differenzunterdruckgraden für eine elektronensäule
TWI314336B (en) * 2006-08-18 2009-09-01 Ind Tech Res Inst Field emission system and method for improving its vacuum
JP2011510431A (ja) * 2007-07-26 2011-03-31 シーイービーティー・カンパニー・リミティッド ナノ構造チップを備えた電子放出源及びこれを用いた電子カラム
EP2091065A1 (de) * 2008-02-18 2009-08-19 ETH Zürich Elektronenmikroskop zur Erfassung von Niedrigspannungsfeldemissionen
RU2494484C2 (ru) 2008-05-02 2013-09-27 Шайн Медикал Текнолоджис, Инк. Устройство и способ производства медицинских изотопов
GB0809331D0 (en) * 2008-05-22 2008-07-02 Nfab Ltd Improved electron beam generator
WO2012003009A2 (en) 2010-01-28 2012-01-05 Shine Medical Technologies, Inc. Segmented reaction chamber for radioisotope production
US10734126B2 (en) 2011-04-28 2020-08-04 SHINE Medical Technologies, LLC Methods of separating medical isotopes from uranium solutions
RU2649662C2 (ru) 2012-04-05 2018-04-05 Шайн Медикал Текнолоджиз, Инк. Водная сборка и способ управления
US8513619B1 (en) 2012-05-10 2013-08-20 Kla-Tencor Corporation Non-planar extractor structure for electron source
US9793089B2 (en) 2013-09-16 2017-10-17 Kla-Tencor Corporation Electron emitter device with integrated multi-pole electrode structure
US9934933B1 (en) * 2017-01-19 2018-04-03 Kla-Tencor Corporation Extractor electrode for electron source
CN115458379A (zh) * 2021-06-08 2022-12-09 清华大学 碳纳米管器件及其使用方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3887891T2 (de) * 1988-11-01 1994-08-11 Ibm Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel.
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system
US5654548A (en) * 1992-08-06 1997-08-05 International Business Machines Corporation Source for intense coherent electron pulses
JPH0721953A (ja) * 1993-06-30 1995-01-24 Hitachi Ltd 電子線源及びそれを用いた電子線応用装置と電子装置
US5478698A (en) * 1993-08-12 1995-12-26 Lsi Logic Corporation Direct-write afocal electron-beam semiconductor lithography
DE4405768A1 (de) * 1994-02-23 1995-08-24 Till Keesmann Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung
JP4093590B2 (ja) * 1994-10-03 2008-06-04 エフイーアイ カンパニー 針及び隔膜のような抽出電極を有する電子源を具えている粒子光学装置
WO1997018577A1 (en) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Process for making a field emitter cathode using a particulate field emitter material
JP3171121B2 (ja) 1996-08-29 2001-05-28 双葉電子工業株式会社 電界放出型表示装置
DE69834673T2 (de) * 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Verfahren zur Herstellung einer Elektronenemittierenden Quelle
US6019913A (en) * 1998-05-18 2000-02-01 The Regents Of The University Of California Low work function, stable compound clusters and generation process
US6283812B1 (en) * 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes

Also Published As

Publication number Publication date
EP1134771A1 (de) 2001-09-19
US6771012B2 (en) 2004-08-03
EP1134771B1 (de) 2009-08-05
US20010040215A1 (en) 2001-11-15
DE60042679D1 (de) 2009-09-17

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