ATE434835T1 - Halbleiterphotodiode und herstellungsverfahren dafür - Google Patents

Halbleiterphotodiode und herstellungsverfahren dafür

Info

Publication number
ATE434835T1
ATE434835T1 AT06701208T AT06701208T ATE434835T1 AT E434835 T1 ATE434835 T1 AT E434835T1 AT 06701208 T AT06701208 T AT 06701208T AT 06701208 T AT06701208 T AT 06701208T AT E434835 T1 ATE434835 T1 AT E434835T1
Authority
AT
Austria
Prior art keywords
region
conductivity type
semiconductor
photodiode
photodiod
Prior art date
Application number
AT06701208T
Other languages
English (en)
Inventor
Radivoje Popovic
Zhen Xiao
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Application granted granted Critical
Publication of ATE434835T1 publication Critical patent/ATE434835T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT06701208T 2005-01-11 2006-01-10 Halbleiterphotodiode und herstellungsverfahren dafür ATE434835T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05100128A EP1679749A1 (de) 2005-01-11 2005-01-11 Halbleiter Photodiode und Verfahren zur Herstellung
PCT/EP2006/050103 WO2006074990A1 (en) 2005-01-11 2006-01-10 Semiconductor photodiode and method of making

Publications (1)

Publication Number Publication Date
ATE434835T1 true ATE434835T1 (de) 2009-07-15

Family

ID=34938502

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06701208T ATE434835T1 (de) 2005-01-11 2006-01-10 Halbleiterphotodiode und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US20080150069A1 (de)
EP (2) EP1679749A1 (de)
JP (1) JP2008527702A (de)
AT (1) ATE434835T1 (de)
DE (1) DE602006007438D1 (de)
WO (1) WO2006074990A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475831B2 (en) 2015-09-17 2019-11-12 Sony Semiconductor Solutions Corporation Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device

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CN101484999B (zh) 2006-07-03 2011-09-14 浜松光子学株式会社 光电二极管阵列
EP1936390A1 (de) * 2006-12-20 2008-06-25 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Halbleiterbauteil zum Messen von ultra kleinen elektrischen Strömen und kleinen Spannungen
US8969117B2 (en) 2007-03-07 2015-03-03 Princeton Lightwave, Inc. Method for forming a buried p-n junction and articles formed thereby
US7964435B2 (en) * 2007-03-07 2011-06-21 Princeton Lightware, Inc. Method for dopant diffusion
US8044436B2 (en) 2007-03-07 2011-10-25 Princeton Lightwave, Inc. Avalanche photodiode having controlled breakdown voltage
JP2008305857A (ja) * 2007-06-05 2008-12-18 Mitsubishi Electric Corp 光半導体装置
US8198650B2 (en) 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
JP5218610B2 (ja) * 2011-07-08 2013-06-26 三菱電機株式会社 光半導体装置
FR2994002A1 (fr) * 2012-07-28 2014-01-31 St Microelectronics Sa Procede de determination d'un modele mathematique du comportement d'une diode a jonction pn et dispositif correspondant
GB201311055D0 (en) 2013-06-21 2013-08-07 St Microelectronics Res & Dev Single-photon avalanche diode and an array thereof
GB2524044B (en) * 2014-03-12 2019-03-27 Teledyne E2V Uk Ltd CMOS Image sensor
US10192892B2 (en) 2015-05-29 2019-01-29 Palo Alto Research Center Incorporated Active matrix backplane formed using thin film optocouplers
US9946135B2 (en) * 2015-05-29 2018-04-17 Palo Alto Research Center Incorporated High voltage thin film optical switch
WO2017184226A1 (en) 2016-01-28 2017-10-26 Massachusetts Institute Of Technology Apparatus, systems, and methods for waveguide-coupled resonant photon detection
US10397529B2 (en) 2017-04-28 2019-08-27 Palo Alto Research Center Incorporated Transparent optical coupler active matrix array
EP3435419A1 (de) 2017-07-26 2019-01-30 ams AG Halbleiterbauelement mit einzelelektronenzählfunktion mit einem avalanche bipolartransistor
WO2019112046A1 (ja) * 2017-12-08 2019-06-13 国立大学法人静岡大学 光電変換素子及び固体撮像装置
JP2019212684A (ja) * 2018-05-31 2019-12-12 株式会社クオンタムドライブ 可視光無線通信用の受光装置
FR3121282B1 (fr) * 2021-03-25 2023-12-22 St Microelectronics Crolles 2 Sas Photodiode SPAD
CN113690336B (zh) * 2021-09-13 2024-02-27 武汉新芯集成电路制造有限公司 单光子雪崩二极管及其制作方法
CN114093962B (zh) * 2021-11-22 2024-04-09 季华实验室 单光子雪崩二极管和光电探测器阵列
CN114203852A (zh) * 2021-12-10 2022-03-18 季华实验室 单光子雪崩二极管和光电探测器阵列

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NL8101883A (nl) * 1981-04-16 1982-11-16 Philips Nv Ladingsgekoppelde inrichting.
WO1985004987A1 (en) * 1984-04-25 1985-11-07 Josef Kemmer Large-surface low-capacity semi-conductor radiation detector
JPH08125210A (ja) * 1994-10-24 1996-05-17 Jiyousuke Nakada 受光素子及び受光素子アレイ並びにそれらを用いた電解装置
EP1191598B1 (de) * 2000-01-18 2007-12-19 Siemens Schweiz AG Verfahren zur Herstellung eines Halbleiter-Photosensors
US6504158B2 (en) * 2000-12-04 2003-01-07 General Electric Company Imaging array minimizing leakage currents
JP2002286959A (ja) * 2000-12-28 2002-10-03 Canon Inc 半導体装置、光電融合基板、及びそれらの製造方法
IES20010616A2 (en) 2001-06-28 2002-05-15 Nat Microelectronics Res Ct Microelectronic device and method of its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475831B2 (en) 2015-09-17 2019-11-12 Sony Semiconductor Solutions Corporation Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device

Also Published As

Publication number Publication date
US20080150069A1 (en) 2008-06-26
WO2006074990A1 (en) 2006-07-20
EP1839343B1 (de) 2009-06-24
EP1839343A1 (de) 2007-10-03
DE602006007438D1 (de) 2009-08-06
JP2008527702A (ja) 2008-07-24
EP1679749A1 (de) 2006-07-12

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