ATE396497T1 - THICKNESS MEASURING APPARATUS, THICKNESS MEASURING METHOD AND WET ETCHING APPARATUS AND WET ETCHING METHODS USING THE SAME - Google Patents
THICKNESS MEASURING APPARATUS, THICKNESS MEASURING METHOD AND WET ETCHING APPARATUS AND WET ETCHING METHODS USING THE SAMEInfo
- Publication number
- ATE396497T1 ATE396497T1 AT01900776T AT01900776T ATE396497T1 AT E396497 T1 ATE396497 T1 AT E396497T1 AT 01900776 T AT01900776 T AT 01900776T AT 01900776 T AT01900776 T AT 01900776T AT E396497 T1 ATE396497 T1 AT E396497T1
- Authority
- AT
- Austria
- Prior art keywords
- wet etching
- light
- thickness measuring
- thickness
- light intensity
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000001039 wet etching Methods 0.000 title abstract 5
- 238000005259 measurement Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Weting (AREA)
- A Measuring Device Byusing Mechanical Method (AREA)
- Processing Of Meat And Fish (AREA)
- Length-Measuring Instruments Using Mechanical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
At each measurement time, measurement light is supplied from a measurement light source 11, and interference light obtained when reflected light from a semiconductor wafer W and reference light from a reference light generating section 14 are coupled is detected by a photodetector 15. A thickness calculating section 16 obtains a light intensity distribution representing the correlation between the light intensity of the interference light and the reference optical path length, selects a wafer upper surface peak and wafer lower surface peak from a plurality of light intensity peaks in the light intensity distribution using a predetermined selection criterion, and calculates the thickness of the semiconductor wafer W from the optical path length difference between the light intensity peaks. With this arrangement, a thickness measuring apparatus and thickness measuring method capable of measuring the thickness of a semiconductor wafer during execution of wet etching independently of the presence of an etchant, and a wet etching apparatus and wet etching method using the thickness measuring apparatus and method are implemented. <IMAGE>
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000013151A JP4347484B2 (en) | 2000-01-21 | 2000-01-21 | Thickness measuring apparatus, wet etching apparatus using the same, and wet etching method |
JP2000371621A JP4347517B2 (en) | 2000-12-06 | 2000-12-06 | Thickness measuring apparatus, wet etching apparatus using the same, and wet etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE396497T1 true ATE396497T1 (en) | 2008-06-15 |
Family
ID=26583934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01900776T ATE396497T1 (en) | 2000-01-21 | 2001-01-16 | THICKNESS MEASURING APPARATUS, THICKNESS MEASURING METHOD AND WET ETCHING APPARATUS AND WET ETCHING METHODS USING THE SAME |
Country Status (6)
Country | Link |
---|---|
US (1) | US6897964B2 (en) |
EP (1) | EP1258916B1 (en) |
AT (1) | ATE396497T1 (en) |
AU (1) | AU2001225543A1 (en) |
DE (1) | DE60134120D1 (en) |
WO (1) | WO2001059830A1 (en) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003315017A (en) * | 2002-04-25 | 2003-11-06 | Hamamatsu Photonics Kk | Thickness measuring apparatus |
WO2004034894A1 (en) * | 2002-10-16 | 2004-04-29 | Campbell Science Group, Inc. | Cornea characteristics measuring device |
US7130061B2 (en) * | 2003-03-31 | 2006-10-31 | Council Of Scientific And Industrial Research | System and method for monitoring properties of a medium by fiber optics |
GB0415766D0 (en) * | 2004-07-14 | 2004-08-18 | Taylor Hobson Ltd | Apparatus for and a method of determining a characteristic of a layer or layers |
CN100516772C (en) * | 2004-09-09 | 2009-07-22 | 鸿富锦精密工业(深圳)有限公司 | Optical signall processor and process thereof |
TWI247096B (en) * | 2004-12-17 | 2006-01-11 | Hon Hai Prec Ind Co Ltd | Optical fiber interference device used for thickness measuring and the method of the same |
CN100395516C (en) * | 2004-12-25 | 2008-06-18 | 鸿富锦精密工业(深圳)有限公司 | Optical fiber interference type device and method for measuring thickness |
JP2007204286A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | Method for manufacturing epitaxial wafer |
US20090065478A1 (en) * | 2007-09-11 | 2009-03-12 | Dockery Kevin P | Measuring etching rates using low coherence interferometry |
JP5490462B2 (en) * | 2009-08-17 | 2014-05-14 | 横河電機株式会社 | Film thickness measuring device |
DE102010015944B4 (en) * | 2010-01-14 | 2016-07-28 | Dusemund Pte. Ltd. | A thinning apparatus having a wet etcher and a monitor, and methods for in-situ measuring wafer thicknesses for monitoring thinning of semiconductor wafers |
GB2478590A (en) * | 2010-03-12 | 2011-09-14 | Precitec Optronik Gmbh | Apparatus and method for monitoring a thickness of a silicon wafer |
FR2959305B1 (en) * | 2010-04-26 | 2014-09-05 | Nanotec Solution | OPTICAL DEVICE AND METHOD FOR INSPECTING STRUCTURED OBJECTS. |
KR101233687B1 (en) * | 2010-10-28 | 2013-02-15 | 삼성디스플레이 주식회사 | Apparatus of etching a glass substrate |
CN102812157B (en) * | 2010-11-30 | 2014-08-20 | 深圳市华星光电技术有限公司 | Method For Etching Metal, Control Method For Etching Metal And Apparatus Thereof |
GB2489722B (en) | 2011-04-06 | 2017-01-18 | Precitec Optronik Gmbh | Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer |
DE102011051146B3 (en) | 2011-06-17 | 2012-10-04 | Precitec Optronik Gmbh | Test method for testing a bonding layer between wafer-shaped samples |
JP6150490B2 (en) * | 2012-10-19 | 2017-06-21 | キヤノン株式会社 | Detection apparatus, exposure apparatus, and device manufacturing method using the same |
DE102012111008B4 (en) | 2012-11-15 | 2014-05-22 | Precitec Optronik Gmbh | Optical measuring method and optical measuring device for detecting a surface topography |
JP6107353B2 (en) * | 2013-04-12 | 2017-04-05 | 株式会社島津製作所 | Surface treatment status monitoring device |
US9500471B2 (en) | 2013-06-17 | 2016-11-22 | Precitec Optronik Gmbh | Optical measuring device and method for acquiring in situ a stage height between a support and an edge region of an object |
ITBO20130403A1 (en) | 2013-07-26 | 2015-01-27 | Marposs Spa | METHOD AND EQUIPMENT FOR OPTICAL CONTROL BY INTERFEROMETRY OF THE THICKNESS OF A PROCESSED OBJECT |
US10026660B2 (en) | 2014-10-31 | 2018-07-17 | Veeco Precision Surface Processing Llc | Method of etching the back of a wafer to expose TSVs |
US10207489B2 (en) * | 2015-09-30 | 2019-02-19 | Sigma Labs, Inc. | Systems and methods for additive manufacturing operations |
TWI629720B (en) * | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | Method and apparatus for dynamic control of the temperature of a wet etch process |
TWI738757B (en) * | 2016-04-05 | 2021-09-11 | 美商維克儀器公司 | An apparatus and method to control etch rate through adaptive spiking of chemistry |
US10234265B2 (en) | 2016-12-12 | 2019-03-19 | Precitec Optronik Gmbh | Distance measuring device and method for measuring distances |
WO2018160461A1 (en) | 2017-03-03 | 2018-09-07 | Veeco Precision Surface Processing Llc | An apparatus and method for wafer thinning in advanced packaging applications |
DE102017126310A1 (en) | 2017-11-09 | 2019-05-09 | Precitec Optronik Gmbh | Distance measuring device |
DE102018117470A1 (en) * | 2018-07-19 | 2020-01-23 | Carl Zeiss Microscopy Gmbh | Method for determining the thickness and refractive index of a layer |
CN110797272B (en) * | 2018-08-01 | 2022-08-26 | 上海祖强能源有限公司 | Chip cutting method and chip cutting device |
DE102018130901A1 (en) | 2018-12-04 | 2020-06-04 | Precitec Optronik Gmbh | Optical measuring device |
CN111426273A (en) * | 2019-01-29 | 2020-07-17 | 法国圣戈班玻璃公司 | Measuring method and measuring device for measuring the thickness of a substrate |
CN112599458A (en) * | 2021-03-03 | 2021-04-02 | 西安奕斯伟硅片技术有限公司 | Silicon wafer etching device and method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5220405A (en) | 1991-12-20 | 1993-06-15 | International Business Machines Corporation | Interferometer for in situ measurement of thin film thickness changes |
US5392124A (en) * | 1993-12-17 | 1995-02-21 | International Business Machines Corporation | Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control |
US5956142A (en) | 1997-09-25 | 1999-09-21 | Siemens Aktiengesellschaft | Method of end point detection using a sinusoidal interference signal for a wet etch process |
JPH11354489A (en) * | 1998-06-05 | 1999-12-24 | Toshiba Corp | Production system of semiconductor and etching method for semiconductor device |
JP4486217B2 (en) * | 2000-05-01 | 2010-06-23 | 浜松ホトニクス株式会社 | Thickness measuring apparatus, wet etching apparatus using the same, and wet etching method |
-
2001
- 2001-01-16 US US10/181,557 patent/US6897964B2/en not_active Expired - Lifetime
- 2001-01-16 AU AU2001225543A patent/AU2001225543A1/en not_active Abandoned
- 2001-01-16 EP EP01900776A patent/EP1258916B1/en not_active Expired - Lifetime
- 2001-01-16 DE DE60134120T patent/DE60134120D1/en not_active Expired - Lifetime
- 2001-01-16 AT AT01900776T patent/ATE396497T1/en active
- 2001-01-16 WO PCT/JP2001/000212 patent/WO2001059830A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20030090671A1 (en) | 2003-05-15 |
WO2001059830A1 (en) | 2001-08-16 |
DE60134120D1 (en) | 2008-07-03 |
AU2001225543A1 (en) | 2001-08-20 |
EP1258916A4 (en) | 2006-10-25 |
US6897964B2 (en) | 2005-05-24 |
EP1258916A1 (en) | 2002-11-20 |
EP1258916B1 (en) | 2008-05-21 |
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