ATE391759T1 - Verfahren zur herstellung eines dicken films auf basis von siliciumdioxid - Google Patents

Verfahren zur herstellung eines dicken films auf basis von siliciumdioxid

Info

Publication number
ATE391759T1
ATE391759T1 AT02724627T AT02724627T ATE391759T1 AT E391759 T1 ATE391759 T1 AT E391759T1 AT 02724627 T AT02724627 T AT 02724627T AT 02724627 T AT02724627 T AT 02724627T AT E391759 T1 ATE391759 T1 AT E391759T1
Authority
AT
Austria
Prior art keywords
coating
coating film
producing
represented
film
Prior art date
Application number
AT02724627T
Other languages
English (en)
Inventor
Kenichi Motoyama
Takakazu Nakada
Hitoshi Furusho
Hiroyoshi Fukuro
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Application granted granted Critical
Publication of ATE391759T1 publication Critical patent/ATE391759T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02Polysilicates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/06Preparatory processes
    • C08G77/08Preparatory processes characterised by the catalysts used
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31667Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Silicon Compounds (AREA)
AT02724627T 2001-04-24 2002-04-19 Verfahren zur herstellung eines dicken films auf basis von siliciumdioxid ATE391759T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001125339 2001-04-24

Publications (1)

Publication Number Publication Date
ATE391759T1 true ATE391759T1 (de) 2008-04-15

Family

ID=18974580

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02724627T ATE391759T1 (de) 2001-04-24 2002-04-19 Verfahren zur herstellung eines dicken films auf basis von siliciumdioxid

Country Status (7)

Country Link
US (2) US7211522B2 (de)
EP (1) EP1391491B1 (de)
KR (1) KR100742557B1 (de)
AT (1) ATE391759T1 (de)
DE (1) DE60226022D1 (de)
TW (1) TWI299746B (de)
WO (1) WO2002088267A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100742557B1 (ko) 2001-04-24 2007-07-25 닛산 가가쿠 고교 가부시키 가이샤 실리카계 후막의 형성방법
US8614768B2 (en) 2002-03-18 2013-12-24 Raytheon Company Miniaturized imaging device including GRIN lens optically coupled to SSID
JP4887783B2 (ja) * 2003-12-18 2012-02-29 日産化学工業株式会社 低屈折率及び撥水性を有する被膜
TWI404776B (zh) * 2003-12-19 2013-08-11 Nissan Chemical Ind Ltd A film having a low refractive index and a large contact angle with respect to water
US7439111B2 (en) * 2004-09-29 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7550040B2 (en) * 2005-06-17 2009-06-23 Nissan Chemical Industries, Ltd. Coating fluid for forming film, and film thereof and film-forming process
DE112007003638T5 (de) * 2007-09-10 2010-08-12 Fujitsu Ltd., Kawasaki Prozess zum Herstellen einer siliziumhaltigen Beschichtung, siliziumhaltige Beschichtung und Halbleitervorrichtung
JP5596027B2 (ja) 2008-06-18 2014-09-24 レイセオン カンパニー カテーテル
WO2010014792A2 (en) 2008-07-30 2010-02-04 Sterling Lc Method and device for incremental wavelength variation to analyze tissue
US9060704B2 (en) * 2008-11-04 2015-06-23 Sarcos Lc Method and device for wavelength shifted imaging
WO2011041720A2 (en) 2009-10-01 2011-04-07 Jacobsen Stephen C Method and apparatus for manipulating movement of a micro-catheter
US8717428B2 (en) * 2009-10-01 2014-05-06 Raytheon Company Light diffusion apparatus
WO2011041728A2 (en) 2009-10-01 2011-04-07 Jacobsen Stephen C Needle delivered imaging device
US8828028B2 (en) 2009-11-03 2014-09-09 Raytheon Company Suture device and method for closing a planar opening
WO2013035911A1 (en) 2011-09-09 2013-03-14 Lg Innotek Co., Ltd. A method of fabricating thick film of large area substrate and thick film, backlihgt unit and liquid crystal display using the same
TWI483846B (zh) * 2011-09-13 2015-05-11 Lg Innotek Co Ltd 基板的薄膜之製造方法及薄膜,發光單元以及使用其之液晶顯示器
JP6191613B2 (ja) * 2012-10-19 2017-09-06 Jnc株式会社 熱硬化性組成物
JP6266230B2 (ja) * 2013-05-15 2018-01-24 日揮触媒化成株式会社 表面改質金属酸化物微粒子、薄膜形成用の塗布液、薄膜付き基材、光電気セル、及び表面改質金属酸化物微粒子の製造方法
US10676643B2 (en) 2016-03-31 2020-06-09 Nissan Chemical Industries, Ltd. Coating film-forming composition and process for producing the same
KR102169665B1 (ko) 2018-11-12 2020-10-23 주식회사 디엠티 공기압을 이용한 수지내 기포제어 코팅장치

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JPS5534258A (en) * 1978-09-01 1980-03-10 Tokyo Denshi Kagaku Kabushiki Coating solution for forming silica film
EP0218117A3 (de) 1985-10-11 1989-11-23 Allied Corporation Polycyclosilazanpolymere und ihre Verwendung als dielektrische Filme in integrierten Schaltkreisen
US4719125A (en) * 1985-10-11 1988-01-12 Allied Corporation Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology
JPH083074B2 (ja) * 1986-11-18 1996-01-17 東京応化工業株式会社 シリカ系被膜形成用塗布液
JPH03126612A (ja) 1989-10-06 1991-05-29 Toray Ind Inc ケイ素含有溶液および被膜形成用塗布液
JPH07233271A (ja) 1994-02-25 1995-09-05 Matsushita Electric Works Ltd 表面被覆成形品
JPH07286136A (ja) * 1994-04-19 1995-10-31 Mitsubishi Chem Corp シリカ系被膜形成用組成物
JPH0827419A (ja) 1994-07-12 1996-01-30 Mitsubishi Chem Corp シリカ被膜形成塗布液用組成物
TW376408B (en) * 1995-12-01 1999-12-11 Nissan Chemical Ind Ltd Coating film having water repellency and low refractive index
TW397927B (en) * 1996-02-16 2000-07-11 Nissan Chemical Ind Ltd Process for forming a liquid crystal alignment film
JP3757514B2 (ja) 1996-02-16 2006-03-22 日産化学工業株式会社 液晶垂直配向膜の形成方法
US5880187A (en) * 1996-04-24 1999-03-09 Toyota Jidosha Kabushiki Kaisha Top coating compositions
JPH115946A (ja) 1997-06-17 1999-01-12 Inax Corp 無機塗料の製造方法及び塗膜の形成方法
JP2000344894A (ja) 1999-06-02 2000-12-12 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物および絶縁膜形成用材料
JP3245136B2 (ja) 1999-09-01 2002-01-07 キヤノン販売株式会社 絶縁膜の膜質改善方法
TW468053B (en) * 1999-12-14 2001-12-11 Nissan Chemical Ind Ltd Antireflection film, process for forming the antireflection film, and antireflection glass
JP2001308089A (ja) 2000-04-25 2001-11-02 Hitachi Chem Co Ltd 低誘電率膜及びこの低誘電率膜を有する半導体素子
KR100742557B1 (ko) 2001-04-24 2007-07-25 닛산 가가쿠 고교 가부시키 가이샤 실리카계 후막의 형성방법

Also Published As

Publication number Publication date
US7211522B2 (en) 2007-05-01
EP1391491A4 (de) 2005-05-04
US20040115955A1 (en) 2004-06-17
DE60226022D1 (de) 2008-05-21
WO2002088267A1 (fr) 2002-11-07
KR100742557B1 (ko) 2007-07-25
KR20040030591A (ko) 2004-04-09
EP1391491B1 (de) 2008-04-09
TWI299746B (de) 2008-08-11
US20060189163A1 (en) 2006-08-24
EP1391491A1 (de) 2004-02-25
US7491651B2 (en) 2009-02-17

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