ATE371263T1 - Verfahren zur herstellung von siliziumnitridfilmen und siliziumoxinitridfilmen durch thermische chemische aufdampfung - Google Patents
Verfahren zur herstellung von siliziumnitridfilmen und siliziumoxinitridfilmen durch thermische chemische aufdampfungInfo
- Publication number
- ATE371263T1 ATE371263T1 AT03772312T AT03772312T ATE371263T1 AT E371263 T1 ATE371263 T1 AT E371263T1 AT 03772312 T AT03772312 T AT 03772312T AT 03772312 T AT03772312 T AT 03772312T AT E371263 T1 ATE371263 T1 AT E371263T1
- Authority
- AT
- Austria
- Prior art keywords
- film
- silicon nitride
- chemical vapor
- nitride film
- thermal chemical
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 235000019270 ammonium chloride Nutrition 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002279880A JP4358492B2 (ja) | 2002-09-25 | 2002-09-25 | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE371263T1 true ATE371263T1 (de) | 2007-09-15 |
Family
ID=32040471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03772312T ATE371263T1 (de) | 2002-09-25 | 2003-09-23 | Verfahren zur herstellung von siliziumnitridfilmen und siliziumoxinitridfilmen durch thermische chemische aufdampfung |
Country Status (9)
Country | Link |
---|---|
US (2) | US7192626B2 (de) |
EP (1) | EP1547138B1 (de) |
JP (1) | JP4358492B2 (de) |
KR (1) | KR101042133B1 (de) |
CN (1) | CN100347834C (de) |
AT (1) | ATE371263T1 (de) |
DE (1) | DE60315850T2 (de) |
TW (1) | TWI274790B (de) |
WO (1) | WO2004030071A1 (de) |
Families Citing this family (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294582B2 (en) * | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
WO2004009861A2 (en) * | 2002-07-19 | 2004-01-29 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
JP2005213633A (ja) * | 2004-02-02 | 2005-08-11 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
JP4470023B2 (ja) * | 2004-08-20 | 2010-06-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン窒化物膜の製造方法 |
US7966969B2 (en) * | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
US7629267B2 (en) * | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
US20060226442A1 (en) * | 2005-04-07 | 2006-10-12 | An-Ping Zhang | GaN-based high electron mobility transistor and method for making the same |
US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
US7648927B2 (en) * | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
WO2007008653A2 (en) * | 2005-07-08 | 2007-01-18 | Aviza Technology, Inc. | Method for depositing silicon-containing films |
US20070010072A1 (en) * | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
US20070135552A1 (en) * | 2005-12-09 | 2007-06-14 | General Atomics | Gas barrier |
WO2007075369A1 (en) * | 2005-12-16 | 2007-07-05 | Asm International N.V. | Low temperature doped silicon layer formation |
KR100748355B1 (ko) * | 2005-12-29 | 2007-08-09 | 성균관대학교산학협력단 | 재료 합성과 연속 도핑을 수행하기 위한 이중영역 열 화학기상 증착 장치 |
US7875312B2 (en) | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
US8530361B2 (en) | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
US7825038B2 (en) * | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US8232176B2 (en) * | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
US7867923B2 (en) * | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US8357435B2 (en) * | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8105648B2 (en) | 2008-05-13 | 2012-01-31 | United Microelectronics Corp. | Method for operating a chemical deposition chamber |
US20100081293A1 (en) * | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
US8980382B2 (en) * | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8741788B2 (en) * | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US7989365B2 (en) * | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
CN102021531B (zh) * | 2009-09-09 | 2012-12-05 | 北大方正集团有限公司 | 一种氮化硅薄膜的生成装置及方法 |
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
US8449942B2 (en) * | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
JP2013516763A (ja) * | 2009-12-30 | 2013-05-13 | アプライド マテリアルズ インコーポレイテッド | フレキシブルな窒素/水素比を使用して生成されるラジカルを用いる誘電体膜成長 |
US20110159213A1 (en) * | 2009-12-30 | 2011-06-30 | Applied Materials, Inc. | Chemical vapor deposition improvements through radical-component modification |
US8329262B2 (en) * | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
SG182336A1 (en) * | 2010-01-06 | 2012-08-30 | Applied Materials Inc | Flowable dielectric using oxide liner |
CN102714156A (zh) | 2010-01-07 | 2012-10-03 | 应用材料公司 | 自由基成分cvd的原位臭氧固化 |
KR101853802B1 (ko) * | 2010-03-05 | 2018-05-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 라디칼성분 cvd에 의한 컨포멀 층들 |
US8236708B2 (en) * | 2010-03-09 | 2012-08-07 | Applied Materials, Inc. | Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor |
US7994019B1 (en) | 2010-04-01 | 2011-08-09 | Applied Materials, Inc. | Silicon-ozone CVD with reduced pattern loading using incubation period deposition |
US8476142B2 (en) | 2010-04-12 | 2013-07-02 | Applied Materials, Inc. | Preferential dielectric gapfill |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8912353B2 (en) | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
US8524004B2 (en) | 2010-06-16 | 2013-09-03 | Applied Materials, Inc. | Loadlock batch ozone cure |
US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
DE102011075974A1 (de) * | 2011-05-17 | 2012-11-22 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Trisilylamin in der Gasphase |
US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
DE102011078749A1 (de) | 2011-07-06 | 2013-01-10 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Trisilylamin aus Monochlorsilan und Ammoniak |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
ES2467145T3 (es) * | 2011-07-18 | 2014-06-12 | Essilor International (Compagnie Générale d'Optique) | Máquina para revestir un artículo óptico con una composición de revestimiento antisuciedad y procedimiento para utilizar la máquina |
KR101725446B1 (ko) | 2011-08-24 | 2017-04-12 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US9701540B2 (en) | 2011-10-07 | 2017-07-11 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Apparatus and method for the condensed phase production of trisilylamine |
JP6175439B2 (ja) * | 2011-10-07 | 2017-08-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 濃縮相によるトリシリルアミンの製造のための装置及び方法 |
US9446958B2 (en) | 2011-10-07 | 2016-09-20 | L'Air Liquide Societe Anonyme L'Etude Et L'Exploitation Des Procedes Georges Claude | Apparatus and method for the condensed phase production of trisilylamine |
DE102011088814A1 (de) | 2011-12-16 | 2013-06-20 | Evonik Industries Ag | Verfahren zur Herstellung von Trisilylamin aus Monochlorsilan und Ammoniak unter Verwendung von inertem Lösungsmittel |
US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
US20130209343A1 (en) * | 2012-02-10 | 2013-08-15 | American Air Liquide, Inc. | Liquid phase synthesis of trisilylamine |
US9064694B2 (en) | 2012-07-12 | 2015-06-23 | Tokyo Electron Limited | Nitridation of atomic layer deposited high-k dielectrics using trisilylamine |
EP2875166B1 (de) | 2012-07-20 | 2018-04-11 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Organosilanvorläufer für ald/cvd-siliciumhaltige filmanwendungen |
DE102012214290A1 (de) | 2012-08-10 | 2014-02-13 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
SG2013083654A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Methods for depositing films on sensitive substrates |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
WO2014181194A2 (en) | 2013-03-28 | 2014-11-13 | L'air Liquide Societe Anonyme Pour I'etude Et L'exploitation Des Procedes Georges Claude | Apparatus and method for the condensed phase production of trisilylamine |
DE102013209802A1 (de) | 2013-05-27 | 2014-11-27 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol |
TW201509799A (zh) | 2013-07-19 | 2015-03-16 | Air Liquide | 用於ald/cvd含矽薄膜應用之六配位含矽前驅物 |
US9382268B1 (en) | 2013-07-19 | 2016-07-05 | American Air Liquide, Inc. | Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications |
US20150024152A1 (en) * | 2013-07-19 | 2015-01-22 | Agilent Technologies, Inc. | Metal components with inert vapor phase coating on internal surfaces |
KR102326396B1 (ko) | 2013-09-27 | 2021-11-12 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물 |
DE102014204785A1 (de) | 2014-03-14 | 2015-09-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von reinem Trisilylamin |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
CN107002236B (zh) | 2014-09-23 | 2019-04-05 | 乔治洛德方法研究和开发液化空气有限公司 | 用于沉积含Si膜的碳硅烷取代的胺前体以及其方法 |
WO2016054566A1 (en) | 2014-10-02 | 2016-04-07 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organodisilane precursors for ald/cvd silicon-containing film applications |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US9589790B2 (en) * | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
US10570513B2 (en) | 2014-12-13 | 2020-02-25 | American Air Liquide, Inc. | Organosilane precursors for ALD/CVD silicon-containing film applications and methods of using the same |
US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
TWI716333B (zh) | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
US10087521B2 (en) * | 2015-12-15 | 2018-10-02 | Silcotek Corp. | Silicon-nitride-containing thermal chemical vapor deposition coating |
DE102016203082A1 (de) * | 2016-02-26 | 2017-08-31 | Wacker Chemie Ag | Verfahren zur Abscheidung einer In Situ-Beschichtung auf thermisch und chemisch beanspruchten Bauteilen eines Wirbelschichtreaktors zur Herstellung von hochreinem Polysilicium |
TWI753794B (zh) | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
US10629435B2 (en) | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
US10790140B2 (en) | 2017-02-14 | 2020-09-29 | Applied Materials, Inc. | High deposition rate and high quality nitride |
US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
KR102347201B1 (ko) | 2017-10-25 | 2022-01-04 | 한국화학연구원 | 실리콘 아미노아미드 이미드 화합물, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
KR20200118504A (ko) | 2018-03-02 | 2020-10-15 | 램 리써치 코포레이션 | 가수분해를 사용한 선택적인 증착 |
WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
TWI792005B (zh) * | 2019-07-23 | 2023-02-11 | 美商應用材料股份有限公司 | 可流動cvd薄膜之表面粗糙度 |
US20240117495A1 (en) * | 2019-10-14 | 2024-04-11 | Silcotek Corp. | Cold thermal chemical vapor deposition |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4200666A (en) * | 1978-08-02 | 1980-04-29 | Texas Instruments Incorporated | Single component monomer for silicon nitride deposition |
US4720395A (en) * | 1986-08-25 | 1988-01-19 | Anicon, Inc. | Low temperature silicon nitride CVD process |
EP0423884A1 (de) * | 1989-10-16 | 1991-04-24 | Koninklijke Philips Electronics N.V. | Verfahren zur Abscheidung von Siliziumnitridschichten auf Glassubstraten |
CN1055014A (zh) * | 1990-03-17 | 1991-10-02 | 西安电子科技大学 | 低温光化学气相淀积二氧化硅、氮化硅薄膜技术 |
JP2508581B2 (ja) * | 1993-05-28 | 1996-06-19 | 日本電気株式会社 | 化学気相成長法 |
FR2708924B1 (fr) * | 1993-08-12 | 1995-10-20 | Saint Gobain Vitrage Int | Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent. |
US5888579A (en) * | 1996-07-29 | 1999-03-30 | Texas Instruments-Acer Incorporated | Method and apparatus for preventing particle contamination in a process chamber |
US6566281B1 (en) * | 1997-10-15 | 2003-05-20 | International Business Machines Corporation | Nitrogen-rich barrier layer and structures formed |
US5968611A (en) * | 1997-11-26 | 1999-10-19 | The Research Foundation Of State University Of New York | Silicon nitrogen-based films and method of making the same |
US5976991A (en) * | 1998-06-11 | 1999-11-02 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane |
JP2000080476A (ja) * | 1998-06-26 | 2000-03-21 | Toshiba Corp | 気相成長方法および気相成長装置およびハロゲン化アンモニウム除去装置 |
US6365231B2 (en) * | 1998-06-26 | 2002-04-02 | Kabushiki Kaisha Toshiba | Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process |
US6645884B1 (en) * | 1999-07-09 | 2003-11-11 | Applied Materials, Inc. | Method of forming a silicon nitride layer on a substrate |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
US6630413B2 (en) * | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
SG89410A1 (en) * | 2000-07-31 | 2002-06-18 | Hitachi Ulsi Sys Co Ltd | Manufacturing method of semiconductor integrated circuit device |
WO2002080244A2 (en) * | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
JP4021653B2 (ja) * | 2001-11-30 | 2007-12-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Cvd法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US20030111678A1 (en) * | 2001-12-14 | 2003-06-19 | Luigi Colombo | CVD deposition of M-SION gate dielectrics |
US6982230B2 (en) * | 2002-11-08 | 2006-01-03 | International Business Machines Corporation | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures |
JP4259247B2 (ja) * | 2003-09-17 | 2009-04-30 | 東京エレクトロン株式会社 | 成膜方法 |
US6974781B2 (en) * | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
TW200526804A (en) * | 2003-10-30 | 2005-08-16 | Tokyo Electron Ltd | Method of manufacturing semiconductor device, film-forming apparatus, and storage medium |
US7098150B2 (en) * | 2004-03-05 | 2006-08-29 | Air Liquide America L.P. | Method for novel deposition of high-k MSiON dielectric films |
-
2002
- 2002-09-25 JP JP2002279880A patent/JP4358492B2/ja not_active Expired - Lifetime
-
2003
- 2003-09-19 TW TW092125883A patent/TWI274790B/zh not_active IP Right Cessation
- 2003-09-23 EP EP03772312A patent/EP1547138B1/de not_active Expired - Lifetime
- 2003-09-23 AT AT03772312T patent/ATE371263T1/de not_active IP Right Cessation
- 2003-09-23 WO PCT/EP2003/012395 patent/WO2004030071A1/en active IP Right Grant
- 2003-09-23 CN CNB038228548A patent/CN100347834C/zh not_active Expired - Fee Related
- 2003-09-23 DE DE60315850T patent/DE60315850T2/de not_active Expired - Lifetime
- 2003-09-23 KR KR1020057005036A patent/KR101042133B1/ko active IP Right Review Request
- 2003-09-24 US US10/669,623 patent/US7192626B2/en active Active
-
2007
- 2007-02-14 US US11/674,895 patent/US20070134433A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1547138A1 (de) | 2005-06-29 |
JP2004119629A (ja) | 2004-04-15 |
TWI274790B (en) | 2007-03-01 |
CN1685486A (zh) | 2005-10-19 |
WO2004030071A1 (en) | 2004-04-08 |
US20070134433A1 (en) | 2007-06-14 |
US7192626B2 (en) | 2007-03-20 |
US20050100670A1 (en) | 2005-05-12 |
EP1547138B1 (de) | 2007-08-22 |
KR101042133B1 (ko) | 2011-06-16 |
DE60315850D1 (de) | 2007-10-04 |
DE60315850T2 (de) | 2008-05-21 |
JP4358492B2 (ja) | 2009-11-04 |
KR20050060074A (ko) | 2005-06-21 |
TW200406503A (en) | 2004-05-01 |
CN100347834C (zh) | 2007-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE371263T1 (de) | Verfahren zur herstellung von siliziumnitridfilmen und siliziumoxinitridfilmen durch thermische chemische aufdampfung | |
ATE482301T1 (de) | Verfahren zur herstellung von siliziumoxidhaltigen schichten | |
TWI345592B (en) | Process for producing silicon oxide films from organoaminosilane precursors | |
WO2004059707A3 (en) | A method and apparatus for forming a high quality low temperature silicon nitride film | |
WO2005066386A3 (en) | A method and apparatus for forming a high quality low temperature silicon nitride layer | |
JP2508581B2 (ja) | 化学気相成長法 | |
TW200619416A (en) | Method and apparatus for low temperature dielectric deposition using monomolecular precursors | |
WO2005080628A3 (en) | Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition | |
JP2006060091A (ja) | シリコン窒化物膜の製造方法 | |
TW200704819A (en) | Method for silicon based dielectric chemical vapor deposition | |
ATE385265T1 (de) | Verfahren zur abscheidung von siliciumnitridfilmen und siliciumoxidnitridfilmen mittels cvd | |
KR102293802B1 (ko) | 후속하는 다단의 세정 단계를 갖는 mocvd-층 성장 방법 | |
TWI260326B (en) | Process for the production and purification of bis(tertiary-butylamino) silane | |
WO2005038871A3 (en) | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same | |
JP2003166060A (ja) | Cvd法によるシリコン窒化物膜、シリコンオキシ窒化物膜、またはシリコン酸化物膜の製造方法 | |
ATE511555T1 (de) | Atomlagenabscheidungsverfahren zur bildung von siliciumdioxid enthaltenden schichten | |
KR920008876A (ko) | Cvd실리콘 산화질화막의 제조방법 | |
ATE307914T1 (de) | Cvd-abscheidung von hf und zr enthaltenden oxinitride filmen | |
TW200500490A (en) | Methods for producing silicon nitride films by vapor-phase growth | |
JP2008258614A5 (de) | ||
ATE312055T1 (de) | Verfahren zur herstellung von siliciumnitrid | |
KR100623800B1 (ko) | 질화규소의 증착방법 | |
JP2005347653A (ja) | 薄膜形成方法 | |
KR950001946A (ko) | 티탄산납 박막 형성방법 | |
JPS62281417A (ja) | 気相成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |