ATE361529T1 - Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins - Google Patents
Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteinsInfo
- Publication number
- ATE361529T1 ATE361529T1 AT04799181T AT04799181T ATE361529T1 AT E361529 T1 ATE361529 T1 AT E361529T1 AT 04799181 T AT04799181 T AT 04799181T AT 04799181 T AT04799181 T AT 04799181T AT E361529 T1 ATE361529 T1 AT E361529T1
- Authority
- AT
- Austria
- Prior art keywords
- magnetorresistive
- magnetic field
- memory component
- during programming
- active field
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Measuring Magnetic Variables (AREA)
- Transceivers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03104338 | 2003-11-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE361529T1 true ATE361529T1 (de) | 2007-05-15 |
Family
ID=34610127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04799181T ATE361529T1 (de) | 2003-11-24 | 2004-11-17 | Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins |
Country Status (9)
Country | Link |
---|---|
US (1) | US7355882B2 (de) |
EP (1) | EP1692704B1 (de) |
JP (1) | JP2007513446A (de) |
KR (1) | KR20060111521A (de) |
CN (1) | CN1886801B (de) |
AT (1) | ATE361529T1 (de) |
DE (1) | DE602004006302T2 (de) |
TW (1) | TW200539176A (de) |
WO (1) | WO2005050660A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7692956B2 (en) * | 2005-10-03 | 2010-04-06 | Nec Corporation | Magnetic random access memory |
US7483295B2 (en) * | 2007-04-23 | 2009-01-27 | Mag Ic Technologies, Inc. | MTJ sensor including domain stable free layer |
EP2276034B1 (de) | 2009-07-13 | 2016-04-27 | Crocus Technology S.A. | Selbstbezogene Magnetdirektzugriffsspeicherzelle |
US8525709B2 (en) * | 2011-09-21 | 2013-09-03 | Qualcomm Incorporated | Systems and methods for designing ADC based on probabilistic switching of memories |
US8937841B2 (en) * | 2012-05-16 | 2015-01-20 | SK Hynix Inc. | Driver for semiconductor memory and method thereof |
KR20140021781A (ko) * | 2012-08-10 | 2014-02-20 | 삼성전자주식회사 | 가변 저항 메모리를 포함하는 반도체 메모리 장치 |
CN106098093B (zh) * | 2016-06-13 | 2019-06-04 | 中电海康集团有限公司 | 一种对多态磁性存储器进行磁场辅助再编程的操作方法 |
JP2022006539A (ja) * | 2020-06-24 | 2022-01-13 | キオクシア株式会社 | 磁気記憶装置および磁気記憶装置の制御方法 |
CN112014001B (zh) * | 2020-08-24 | 2022-06-10 | 歌尔微电子有限公司 | 微机电***力学传感器、传感器单体及电子设备 |
US11621026B2 (en) * | 2020-12-01 | 2023-04-04 | International Business Machines Corporation | Write driver with magnetic field compensation |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5289410A (en) * | 1992-06-29 | 1994-02-22 | California Institute Of Technology | Non-volatile magnetic random access memory |
US6097626A (en) * | 1999-07-28 | 2000-08-01 | Hewlett-Packard Company | MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells |
DE10053965A1 (de) * | 2000-10-31 | 2002-06-20 | Infineon Technologies Ag | Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung |
US6999339B2 (en) * | 2003-04-22 | 2006-02-14 | Micron Technology, Inc. | Integrated circuit including sensor to sense environmental data, method of compensating an MRAM integrated circuit for the effects of an external magnetic field, MRAM integrated circuit, and method of testing |
US7088612B2 (en) * | 2004-08-20 | 2006-08-08 | Infineon Technologies Ag | MRAM with vertical storage element in two layer-arrangement and field sensor |
-
2004
- 2004-11-17 JP JP2006540736A patent/JP2007513446A/ja not_active Withdrawn
- 2004-11-17 US US10/579,933 patent/US7355882B2/en active Active
- 2004-11-17 DE DE602004006302T patent/DE602004006302T2/de active Active
- 2004-11-17 CN CN2004800346199A patent/CN1886801B/zh not_active Expired - Fee Related
- 2004-11-17 KR KR1020067010031A patent/KR20060111521A/ko not_active Application Discontinuation
- 2004-11-17 AT AT04799181T patent/ATE361529T1/de not_active IP Right Cessation
- 2004-11-17 WO PCT/IB2004/052467 patent/WO2005050660A1/en active IP Right Grant
- 2004-11-17 EP EP04799181A patent/EP1692704B1/de active Active
- 2004-11-19 TW TW093135723A patent/TW200539176A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2007513446A (ja) | 2007-05-24 |
DE602004006302D1 (de) | 2007-06-14 |
EP1692704A1 (de) | 2006-08-23 |
WO2005050660A1 (en) | 2005-06-02 |
DE602004006302T2 (de) | 2007-09-13 |
CN1886801B (zh) | 2010-05-26 |
EP1692704B1 (de) | 2007-05-02 |
CN1886801A (zh) | 2006-12-27 |
TW200539176A (en) | 2005-12-01 |
US20070070686A1 (en) | 2007-03-29 |
US7355882B2 (en) | 2008-04-08 |
KR20060111521A (ko) | 2006-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EA200700624A1 (ru) | Способ и устройство для измерения магнитного поля с помощью магниторезистивного датчика | |
ATE361529T1 (de) | Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins | |
DE50115073D1 (de) | Vorrichtungen und verfahren zur kalibrierung von verstärkerstufen und zur kompensierung von fehlern in verstärkerstufen vorgeschalteten komponenten | |
JP5735233B2 (ja) | 磁気抵抗効果センサの経年変化補正方法 | |
ATE381706T1 (de) | Vorrichtung und verfahren zur vermessung von bauteilen | |
ATE291384T1 (de) | Vorrichtung und verfahren zum kalibrieren eines elements | |
TW200623019A (en) | Gamma voltage generating apparatus and method of testing a gamma voltage | |
ATE249908T1 (de) | Verfahren und anordnung zum kalibrieren einer laserbearbeitungsmaschine zum bearbeiten von werkstücken | |
NO20083587L (no) | Kompensasjon for magentisk pavirkning i et maling under boring system | |
DK1827167T3 (da) | Udskiftelig tilbehørsdel til et lille elektrisk apparat og fremgangsmåde til bestemmelse af tilbehørdelens driftstid | |
ATE541510T1 (de) | Verfahren zur positionsbestimmung einer magnetfeldquelle | |
ATE336068T1 (de) | Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers | |
WO2006033778A3 (en) | Method and apparatus for conditioning a sensor for measuring oxidation reduction potential | |
DE60141888D1 (de) | Verfahren zur kompensation eines kapazitiv gestörten schaltkreises und anwendung bei matrixbildschirmen | |
DE602004008377D1 (de) | Messgerät, Messverfahren, Messprogramm und Aufzeichnungsmedium für Oberflächenscan | |
ATE431544T1 (de) | Verfahren zum kombinieren von kontinuierlichen und diskontinuierlichen trägheitsinstrumentmessungen und trägheitsnavigationssystem damit | |
JP2021182016A (ja) | 磁気計測システム、及び磁気センサの校正方法 | |
JP2006266909A5 (de) | ||
TW200516383A (en) | Testing device, correction value managing method and program | |
RU2003135623A (ru) | Способ электрохимической размерной обработки с оптимальной длительностью обрабатывающего импульса | |
ATE428118T1 (de) | Messverfahren fur die magnetische permeabilitat und dafur verwendete bezugsprobe | |
GB0823675D0 (en) | Apparatus and method for testing a transducer and/or eletronic circuitry associated with a transducer | |
DE60317806D1 (de) | Verfahren zum Verhindern abrupter Spannungsänderungen am Ausgang eines Verstärkerpaars und Regelschaltung für ein selbstkonfigurierendes Verstärkerpaar in einer Brückenkonfiguration | |
ATE376246T1 (de) | Verfahren und einrichtung zur verhinderung einer falschen programmierung eines magnetoresistiven speicherelements | |
DE50108834D1 (de) | Verfahren und Vorrichtung zum Ermitteln der Qualität eines Kabels |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |