ATE323787T1 - Plasmaunterstützte filmabscheidung - Google Patents
Plasmaunterstützte filmabscheidungInfo
- Publication number
- ATE323787T1 ATE323787T1 AT03816980T AT03816980T ATE323787T1 AT E323787 T1 ATE323787 T1 AT E323787T1 AT 03816980 T AT03816980 T AT 03816980T AT 03816980 T AT03816980 T AT 03816980T AT E323787 T1 ATE323787 T1 AT E323787T1
- Authority
- AT
- Austria
- Prior art keywords
- electrode
- certain embodiments
- interior cavity
- deposition chamber
- plasma
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Saccharide Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43452202P | 2002-12-18 | 2002-12-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE323787T1 true ATE323787T1 (de) | 2006-05-15 |
Family
ID=33449676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03816980T ATE323787T1 (de) | 2002-12-18 | 2003-12-18 | Plasmaunterstützte filmabscheidung |
Country Status (8)
Country | Link |
---|---|
US (2) | US7157123B2 (de) |
EP (1) | EP1579027B1 (de) |
JP (1) | JP2006521462A (de) |
AT (1) | ATE323787T1 (de) |
AU (1) | AU2003304125A1 (de) |
CA (1) | CA2509952A1 (de) |
DE (1) | DE60304745T2 (de) |
WO (1) | WO2004101844A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10352144B8 (de) * | 2003-11-04 | 2008-11-13 | Von Ardenne Anlagentechnik Gmbh | Vakuumbeschichtungsanlage zum Beschichten von längserstreckten Substraten |
FR2865420B1 (fr) * | 2004-01-28 | 2007-09-14 | Saint Gobain | Procede de nettoyage d'un substrat |
TWI390062B (zh) * | 2004-03-05 | 2013-03-21 | Tosoh Corp | 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法 |
DE102004020768A1 (de) * | 2004-04-16 | 2005-11-17 | Centrotherm Photovoltaics Gmbh + Co. Kg | Plasmareaktor mit hoher Produktivität |
DE602005003234T2 (de) | 2004-07-12 | 2008-08-28 | Cardinal Cg Co., Eden Prairie | Wartungsarme beschichtungen |
JP2008520525A (ja) * | 2004-11-15 | 2008-06-19 | 日本板硝子株式会社 | 配列構造を有するコーティングの蒸着方法および設備 |
US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
US20070089982A1 (en) * | 2005-10-24 | 2007-04-26 | Hendryk Richert | Sputtering target and method/apparatus for cooling the target |
CN101297059A (zh) * | 2005-10-24 | 2008-10-29 | 索莱拉斯有限公司 | 结合固定或者旋转靶的阴极与移动磁体组件的组合及其应用 |
EP1783815A1 (de) * | 2005-11-07 | 2007-05-09 | ARCELOR France | Verfahren und Anlage zum Ätzen eines Metallbandes mittels Vakuum-Magnetron-Zerstäubung |
JP5177958B2 (ja) * | 2006-03-31 | 2013-04-10 | Hoya株式会社 | 処理データ管理システム、磁気ディスク製造装置用の処理システム、および、磁気ディスク製造装置のデータ管理方法 |
WO2007124291A2 (en) | 2006-04-19 | 2007-11-01 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
EP2261186B1 (de) | 2007-09-14 | 2017-11-22 | Cardinal CG Company | Pflegeleichte beschichtungstechnologie |
US9175383B2 (en) * | 2008-01-16 | 2015-11-03 | Applied Materials, Inc. | Double-coating device with one process chamber |
CN102272065B (zh) | 2008-11-04 | 2015-06-03 | 顶峰企业公司 | 经涂布的玻璃表面和涂布玻璃基片的方法 |
DE102009015737B4 (de) * | 2009-03-31 | 2013-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren |
CN101988189B (zh) * | 2009-08-07 | 2012-10-10 | 鸿富锦精密工业(深圳)有限公司 | 磁控溅射靶及采用该磁控溅射靶的磁控溅射装置 |
JP2013503974A (ja) * | 2009-09-05 | 2013-02-04 | ジェネラル・プラズマ・インコーポレーテッド | プラズマ化学気相成長装置 |
JP5270505B2 (ja) * | 2009-10-05 | 2013-08-21 | 株式会社神戸製鋼所 | プラズマcvd装置 |
DE102010063685B4 (de) * | 2010-02-21 | 2012-07-12 | Von Ardenne Anlagentechnik Gmbh | Magnetronanordnung mit einem Hohltarget |
US9142392B2 (en) * | 2013-04-29 | 2015-09-22 | Varian Semiconductor Equipment Associates, Inc. | Self-cleaning radio frequency plasma source |
CN103993274A (zh) * | 2014-05-09 | 2014-08-20 | 浙江上方电子装备有限公司 | 一种磁控溅射***及其清洁方法 |
US10816703B2 (en) | 2015-09-28 | 2020-10-27 | Tru Vue, Inc. | Near infrared reflective coatings |
CN109311740B (zh) | 2016-04-19 | 2022-01-11 | 顶峰实业股份有限公司 | 涂覆的玻璃表面和用于涂覆玻璃基板的方法 |
WO2018093985A1 (en) | 2016-11-17 | 2018-05-24 | Cardinal Cg Company | Static-dissipative coating technology |
KR102565397B1 (ko) | 2017-05-04 | 2023-08-09 | 어포지 엔터프라이지즈, 인크. | 저방사율 코팅, 그를 포함하는 유리 표면, 및 그를 제조하는 방법 |
CN112820619A (zh) * | 2021-03-06 | 2021-05-18 | 东莞市峰谷纳米科技有限公司 | 一种等离子表面清洁装置 |
DE102022000838A1 (de) | 2022-03-10 | 2023-09-14 | Helmut Popp | Anlage zum Herstellen von wenigstens einer dünnsten Schicht |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6089573A (ja) * | 1983-10-20 | 1985-05-20 | Ricoh Co Ltd | 透明導電膜 |
DE3521318A1 (de) | 1985-06-14 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung |
US5512102A (en) | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
DE3709177A1 (de) | 1987-03-20 | 1988-09-29 | Leybold Ag | Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden |
US4849087A (en) | 1988-02-11 | 1989-07-18 | Southwall Technologies | Apparatus for obtaining transverse uniformity during thin film deposition on extended substrate |
JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマcvd装置 |
US5082685A (en) | 1989-07-24 | 1992-01-21 | Tdk Corporation | Method of conducting plasma treatment |
US5047131A (en) * | 1989-11-08 | 1991-09-10 | The Boc Group, Inc. | Method for coating substrates with silicon based compounds |
US5096562A (en) | 1989-11-08 | 1992-03-17 | The Boc Group, Inc. | Rotating cylindrical magnetron structure for large area coating |
US5045166A (en) | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
US5262032A (en) | 1991-05-28 | 1993-11-16 | Leybold Aktiengesellschaft | Sputtering apparatus with rotating target and target cooling |
DE4126236C2 (de) * | 1991-08-08 | 2000-01-05 | Leybold Ag | Rotierende Magnetron-Kathode und Verwendung einer rotierenden Magnetron-Kathode |
JPH0768620B2 (ja) | 1991-09-30 | 1995-07-26 | 中外炉工業株式会社 | 金属ストリップの表面清浄化装置 |
GB9121665D0 (en) | 1991-10-11 | 1991-11-27 | Boc Group Plc | Sputtering processes and apparatus |
FR2703073B1 (fr) * | 1993-03-26 | 1995-05-05 | Lorraine Laminage | Procédé et dispositif pour le revêtement en continu d'un matériau métallique en défilement par un dépôt de polymère à gradient de composition, et produit obtenu par ce procédé. |
JP3319023B2 (ja) * | 1993-04-15 | 2002-08-26 | カシオ電子工業株式会社 | 記録装置 |
CA2123479C (en) | 1993-07-01 | 1999-07-06 | Peter A. Sieck | Anode structure for magnetron sputtering systems |
US5531834A (en) | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
US5433786A (en) * | 1993-08-27 | 1995-07-18 | The Dow Chemical Company | Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein |
TW296534B (de) | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
DE4418906B4 (de) | 1994-05-31 | 2004-03-25 | Unaxis Deutschland Holding Gmbh | Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung |
CA2218279A1 (en) * | 1995-04-25 | 1996-10-31 | The Boc Group, Inc. | Sputtering system using cylindrical rotating magnetron electrically powered using alternating current |
JPH09106899A (ja) * | 1995-10-11 | 1997-04-22 | Anelva Corp | プラズマcvd装置及び方法並びにドライエッチング装置及び方法 |
US5743966A (en) * | 1996-05-31 | 1998-04-28 | The Boc Group, Inc. | Unwinding of plastic film in the presence of a plasma |
US6110540A (en) * | 1996-07-12 | 2000-08-29 | The Boc Group, Inc. | Plasma apparatus and method |
BE1010420A3 (fr) | 1996-07-12 | 1998-07-07 | Cockerill Rech & Dev | Procede pour la formation d'un revetement sur un substrat et installation pour la mise en oeuvre de ce procede. |
DE19740793C2 (de) | 1997-09-17 | 2003-03-20 | Bosch Gmbh Robert | Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens |
US6055929A (en) | 1997-09-24 | 2000-05-02 | The Dow Chemical Company | Magnetron |
TW460599B (en) * | 1998-01-14 | 2001-10-21 | Toshiba Corp | Method for forming fine wiring pattern |
US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
JP2002535825A (ja) * | 1999-01-20 | 2002-10-22 | エヌ・ケー・ティー リサーチ センター アクティーゼルスカブ | プラズマ励起方法及びその使用 |
JP3088721B1 (ja) * | 1999-08-11 | 2000-09-18 | キヤノン販売株式会社 | 不純物処理装置及び不純物処理装置のクリーニング方法 |
US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
JP3953247B2 (ja) * | 2000-01-11 | 2007-08-08 | 株式会社日立国際電気 | プラズマ処理装置 |
CN1293026C (zh) * | 2000-07-03 | 2007-01-03 | 斯皮德尔药品公司 | 制备(r)-2-烷基-3-苯基-1-丙醇的方法 |
WO2002084702A2 (en) | 2001-01-16 | 2002-10-24 | Lampkin Curtis M | Sputtering deposition apparatus and method for depositing surface films |
SG149680A1 (en) * | 2001-12-12 | 2009-02-27 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
KR100846484B1 (ko) * | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rmim 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치 |
US6812648B2 (en) * | 2002-10-21 | 2004-11-02 | Guardian Industries Corp. | Method of cleaning ion source, and corresponding apparatus/system |
-
2003
- 2003-12-18 CA CA002509952A patent/CA2509952A1/en not_active Abandoned
- 2003-12-18 AU AU2003304125A patent/AU2003304125A1/en not_active Abandoned
- 2003-12-18 US US10/739,887 patent/US7157123B2/en active Active
- 2003-12-18 AT AT03816980T patent/ATE323787T1/de not_active IP Right Cessation
- 2003-12-18 WO PCT/US2003/041981 patent/WO2004101844A1/en active IP Right Grant
- 2003-12-18 EP EP03816980A patent/EP1579027B1/de not_active Expired - Lifetime
- 2003-12-18 JP JP2004571910A patent/JP2006521462A/ja not_active Withdrawn
- 2003-12-18 DE DE60304745T patent/DE60304745T2/de not_active Expired - Lifetime
-
2006
- 2006-11-22 US US11/562,689 patent/US20070102291A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2006521462A (ja) | 2006-09-21 |
DE60304745D1 (de) | 2006-05-24 |
US20040163945A1 (en) | 2004-08-26 |
US20070102291A1 (en) | 2007-05-10 |
CA2509952A1 (en) | 2004-11-25 |
WO2004101844A1 (en) | 2004-11-25 |
EP1579027B1 (de) | 2006-04-19 |
EP1579027A1 (de) | 2005-09-28 |
AU2003304125A1 (en) | 2004-12-03 |
US7157123B2 (en) | 2007-01-02 |
DE60304745T2 (de) | 2007-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE323787T1 (de) | Plasmaunterstützte filmabscheidung | |
WO2005087974A3 (en) | Cvd processes for the deposition of amorphous carbon films | |
TW368688B (en) | Method and apparatus for plasma-assisted film deposition | |
WO2002084702A3 (en) | Sputtering deposition apparatus and method for depositing surface films | |
EP1340835A3 (de) | Mit einem Kohlenstofffilm beschichteter Gegenstand und Verfahren zu dessen Herstellung | |
CA2573485A1 (en) | Method and system for coating internal surfaces of prefabricated process piping in the field | |
DE60334650D1 (de) | Dünnfilmbeschichtung mit einer transparenten Grundierungsschicht | |
PH12015500539B1 (en) | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition | |
EP1630142A3 (de) | Dünnfilmbeschichtung mit einer transparenten grundierungsschicht | |
AU2003263819A1 (en) | Bond layer for coatings on plastic substrates | |
DK1147065T3 (da) | Smudsresistent coating til glasoverflader | |
WO2007112179A3 (en) | Method and apparatus for improving uniformity of large-area substrates | |
EP1424405A3 (de) | Verfahren und Anlage zur Herstellung beschichteter Werkstücke | |
AU2002232397A1 (en) | Method of depositing dlc inclusive coating system on substrate including step of heating substrate during ion beam deposition of dlc inclusive coating system | |
DE602004011062D1 (de) | Konzentrationsmodulierte beschichtungen | |
WO2000005745A8 (en) | Physical vapor processing of a surface with non-uniformity compensation | |
SG139761A1 (en) | A method and apparatus for providing a substrate coating having a predetermined resistivity, and uses therefor | |
WO2005021832A3 (en) | Method and appartus for depositing materials with tunable properties | |
WO2006002429A3 (en) | Chamberless plasma deposition of coatings | |
MY152144A (en) | System and method for deposition of a material on a substrate | |
DE502004010751D1 (de) | Verfahren und vorrichtung zum magnetronsputtern | |
AU2002304649A1 (en) | Vacuum deposition apparatus and method for depositing thin optical films on high curvature substrates | |
AU2003233581A1 (en) | Method of depositing an oxide film by chemical vapor deposition | |
IT1298891B1 (it) | Impianto da vuoto portatile provvisto di precamera per la deposizione di film sottili su superfici anche inamovibili. | |
AU3573995A (en) | Low surface energy coatings |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |