ATE295601T1 - Aktivmatrix-lichtemittierende vorrichtung und herstellungsverfahren - Google Patents

Aktivmatrix-lichtemittierende vorrichtung und herstellungsverfahren

Info

Publication number
ATE295601T1
ATE295601T1 AT99905257T AT99905257T ATE295601T1 AT E295601 T1 ATE295601 T1 AT E295601T1 AT 99905257 T AT99905257 T AT 99905257T AT 99905257 T AT99905257 T AT 99905257T AT E295601 T1 ATE295601 T1 AT E295601T1
Authority
AT
Austria
Prior art keywords
sections
matrix light
light emitting
emitting device
production method
Prior art date
Application number
AT99905257T
Other languages
English (en)
Inventor
Ichio Yudasaka
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of ATE295601T1 publication Critical patent/ATE295601T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
AT99905257T 1998-03-12 1999-02-19 Aktivmatrix-lichtemittierende vorrichtung und herstellungsverfahren ATE295601T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6178698 1998-03-12
PCT/JP1999/000764 WO1999046748A1 (fr) 1998-03-12 1999-02-19 Dispositif d'emission de lumiere a matrice active et son procede de fabrication

Publications (1)

Publication Number Publication Date
ATE295601T1 true ATE295601T1 (de) 2005-05-15

Family

ID=13181133

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99905257T ATE295601T1 (de) 1998-03-12 1999-02-19 Aktivmatrix-lichtemittierende vorrichtung und herstellungsverfahren

Country Status (9)

Country Link
US (1) US6541918B1 (de)
EP (1) EP0989534B1 (de)
JP (1) JP3601059B2 (de)
KR (1) KR100473453B1 (de)
CN (1) CN1140886C (de)
AT (1) ATE295601T1 (de)
DE (1) DE69925216T2 (de)
TW (1) TW426842B (de)
WO (1) WO1999046748A1 (de)

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TW535454B (en) * 1999-10-21 2003-06-01 Semiconductor Energy Lab Electro-optical device
JP2001222256A (ja) * 1999-11-08 2001-08-17 Semiconductor Energy Lab Co Ltd 発光装置
TW465122B (en) * 1999-12-15 2001-11-21 Semiconductor Energy Lab Light-emitting device
TWM244584U (en) 2000-01-17 2004-09-21 Semiconductor Energy Lab Display system and electrical appliance
US6559594B2 (en) * 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4776792B2 (ja) * 2000-02-28 2011-09-21 株式会社半導体エネルギー研究所 発光装置および電気器具
TW521303B (en) 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
TW495812B (en) * 2000-03-06 2002-07-21 Semiconductor Energy Lab Thin film forming device, method of forming a thin film, and self-light-emitting device
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) * 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6847341B2 (en) 2000-04-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving the same
US6768258B2 (en) * 2000-08-11 2004-07-27 Seiko Epson Corporation Method for manufacturing organic EL device, organic EL device, and electronic apparatus
US7430025B2 (en) 2000-08-23 2008-09-30 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
US6864628B2 (en) * 2000-08-28 2005-03-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound
TW533446B (en) * 2000-12-22 2003-05-21 Koninkl Philips Electronics Nv Electroluminescent device and a method of manufacturing thereof
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7301279B2 (en) * 2001-03-19 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting apparatus and method of manufacturing the same
KR100448448B1 (ko) * 2001-07-12 2004-09-13 주식회사 디알텍 X선 센서용 스위칭소자 및 그 제조방법
JP3481231B2 (ja) 2002-03-05 2003-12-22 三洋電機株式会社 有機エレクトロルミネッセンス表示装置およびその製造方法
JP4120279B2 (ja) 2002-06-07 2008-07-16 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法及び電子機器
KR100909855B1 (ko) * 2002-07-15 2009-07-28 크로스텍 캐피탈, 엘엘씨 크로스토크를 방지할 수 있는 이미지센서 및 그 제조 방법
WO2004053816A1 (ja) * 2002-12-10 2004-06-24 Semiconductor Energy Laboratory Co., Ltd. 発光装置およびその作製方法
US7057208B2 (en) 2003-03-25 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2006523003A (ja) * 2003-04-08 2006-10-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 両面発光装置に係る発明
TWI605718B (zh) * 2003-06-17 2017-11-11 半導體能源研究所股份有限公司 具有攝像功能之顯示裝置及雙向通訊系統
US20040263072A1 (en) * 2003-06-24 2004-12-30 Joon-Young Park Flat panel display
KR100573138B1 (ko) 2003-06-24 2006-04-24 삼성에스디아이 주식회사 평판 표시 장치
US7291967B2 (en) * 2003-08-29 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting element including a barrier layer and a manufacturing method thereof
US7492090B2 (en) * 2003-09-19 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7205716B2 (en) * 2003-10-20 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7902747B2 (en) * 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
US7825021B2 (en) * 2004-01-16 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP4581408B2 (ja) * 2004-01-19 2010-11-17 ソニー株式会社 表示装置
US8772783B2 (en) * 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
EP2044637B1 (de) * 2006-07-25 2015-09-16 LG Chem, Ltd. Verfahren zum herstellen eines organischen leuchtbauelements und durch das verfahren hergestelltes organisches leuchtbauelement
CN101424846B (zh) * 2007-10-29 2010-08-25 北京京东方光电科技有限公司 薄膜晶体管液晶显示器阵列基板、液晶显示面板及其制造方法
KR101193184B1 (ko) * 2009-11-26 2012-10-19 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 이를 제조 하는 방법
CN102723351B (zh) * 2011-03-29 2015-02-04 京东方科技集团股份有限公司 一种oled基板及其制造方法、显示装置
KR101995700B1 (ko) * 2011-06-24 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 패널, 발광 패널을 사용한 발광 장치 및 발광 패널의 제작 방법
JP2018022036A (ja) * 2016-08-03 2018-02-08 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器

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JPS59232385A (ja) 1983-06-15 1984-12-27 株式会社東芝 アクテイブマトリクス型表示装置
JPS61128280A (ja) * 1984-11-27 1986-06-16 旭硝子株式会社 エレクトロクロミツク表示装置
JPS61142692A (ja) * 1984-12-15 1986-06-30 日立マクセル株式会社 マトリクス表示形エレクトロルミネセンス素子
JPH0666017B2 (ja) * 1987-06-26 1994-08-24 セイコーエプソン株式会社 液晶表示装置
JPH03110794U (de) * 1990-02-27 1991-11-13
JP3813217B2 (ja) * 1995-03-13 2006-08-23 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルの製造方法
US5684365A (en) * 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
JP3401356B2 (ja) 1995-02-21 2003-04-28 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルとその製造方法
JP2815004B2 (ja) 1996-10-30 1998-10-27 日本電気株式会社 表示装置およびその製造方法
JP2848371B2 (ja) 1997-02-21 1999-01-20 日本電気株式会社 有機el表示装置及びその製造方法
JPH1154268A (ja) * 1997-08-08 1999-02-26 Sanyo Electric Co Ltd 有機エレクトロルミネッセンスディスプレイ装置

Also Published As

Publication number Publication date
JP3601059B2 (ja) 2004-12-15
EP0989534A4 (de) 2003-07-16
EP0989534A1 (de) 2000-03-29
CN1269042A (zh) 2000-10-04
CN1140886C (zh) 2004-03-03
KR20010012361A (ko) 2001-02-15
TW426842B (en) 2001-03-21
DE69925216T2 (de) 2005-10-06
KR100473453B1 (ko) 2005-03-07
WO1999046748A1 (fr) 1999-09-16
EP0989534B1 (de) 2005-05-11
US6541918B1 (en) 2003-04-01
DE69925216D1 (de) 2005-06-16

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