ATE195390T1 - Solarzelle - Google Patents

Solarzelle

Info

Publication number
ATE195390T1
ATE195390T1 AT91908786T AT91908786T ATE195390T1 AT E195390 T1 ATE195390 T1 AT E195390T1 AT 91908786 T AT91908786 T AT 91908786T AT 91908786 T AT91908786 T AT 91908786T AT E195390 T1 ATE195390 T1 AT E195390T1
Authority
AT
Austria
Prior art keywords
layer
electrode layer
insulation layer
electrode
divided
Prior art date
Application number
AT91908786T
Other languages
English (en)
Inventor
Soichiro Kawakami
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE195390T1 publication Critical patent/ATE195390T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electromechanical Clocks (AREA)
AT91908786T 1990-05-07 1991-05-07 Solarzelle ATE195390T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11582590 1990-05-07
PCT/JP1991/000603 WO1991017572A1 (en) 1990-05-07 1991-05-07 Solar cell

Publications (1)

Publication Number Publication Date
ATE195390T1 true ATE195390T1 (de) 2000-08-15

Family

ID=14672048

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91908786T ATE195390T1 (de) 1990-05-07 1991-05-07 Solarzelle

Country Status (5)

Country Link
US (1) US5328519A (de)
EP (1) EP0481094B1 (de)
AT (1) ATE195390T1 (de)
DE (1) DE69132358T2 (de)
WO (1) WO1991017572A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4413215C2 (de) * 1994-04-15 1996-03-14 Siemens Solar Gmbh Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6387726B1 (en) * 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US7276658B2 (en) * 2001-06-21 2007-10-02 Akzo Nobel N.V. Manufacturing a solar cell foil connected in series via a temporary substrate
JP2006528420A (ja) * 2003-07-22 2006-12-14 アクゾ　ノーベル　ナムローゼ　フェンノートシャップ 仮基板を用いた太陽電池箔の製造方法
WO2008126706A1 (en) * 2007-04-06 2008-10-23 Semiconductor Energy Laboratory Co., Ltd. Photovoltaic device and method for manufacturing the same
TWI483404B (zh) * 2007-08-10 2015-05-01 Hon Hai Prec Ind Co Ltd 太陽能電池組
CN101414643B (zh) * 2007-10-16 2011-03-30 鸿富锦精密工业（深圳）有限公司 太阳能电池装置
WO2009057669A1 (en) * 2007-11-01 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
WO2009060808A1 (en) * 2007-11-09 2009-05-14 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US8927971B2 (en) * 2009-04-06 2015-01-06 University Of Kentucky Research Foundation Semiconducting compounds and devices incorporating same
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
WO2015045242A1 (ja) 2013-09-25 2015-04-02 パナソニックＩｐマネジメント株式会社 太陽電池、太陽電池モジュールおよび太陽電池の製造方法
JP6337352B2 (ja) * 2014-09-25 2018-06-06 パナソニックＩｐマネジメント株式会社 太陽電池

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821827A (ja) * 1981-07-31 1983-02-08 Toshiba Corp 半導体装置の製造方法
JPS5854513A (ja) * 1981-09-29 1983-03-31 東芝ライテック株式会社 照明器具
DE3280455T3 (de) * 1981-11-04 2000-07-13 Kanegafuchi Kagaku Kogyo K.K., Osaka Biegsame photovoltaische Vorrichtung.
JPS58176977A (ja) * 1982-04-09 1983-10-17 Kanegafuchi Chem Ind Co Ltd 可撓性薄膜光起電力装置
JPS58103178A (ja) * 1981-12-15 1983-06-20 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜太陽電池
EP0103168A3 (de) * 1982-09-10 1986-07-02 Hitachi, Ltd. Solarbatterie aus amorphem Silizium
US4568409A (en) * 1983-11-17 1986-02-04 Chronar Corp. Precision marking of layers
JPS60117684A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 非晶質シリコン太陽電池の製造方法
JPS60123074A (ja) * 1983-12-08 1985-07-01 Fuji Electric Corp Res & Dev Ltd アモルファスシリコン太陽電池
US4754544A (en) * 1985-01-30 1988-07-05 Energy Conversion Devices, Inc. Extremely lightweight, flexible semiconductor device arrays
JPS63287076A (ja) * 1987-05-19 1988-11-24 Sanyo Electric Co Ltd 光起電力装置
JP2598967B2 (ja) * 1988-06-10 1997-04-09 三洋電機株式会社 光起電力装置の製造方法

Also Published As

Publication number Publication date
DE69132358D1 (de) 2000-09-14
EP0481094A1 (de) 1992-04-22
EP0481094B1 (de) 2000-08-09
DE69132358T2 (de) 2000-12-28
EP0481094A4 (de) 1994-03-30
US5328519A (en) 1994-07-12
WO1991017572A1 (en) 1991-11-14

Similar Documents

Publication Publication Date Title
ES8705706A1 (es) Un modulo fotovoltaico
DE69132358D1 (de) Solarzelle
ES8700801A1 (es) Un aparato para derivar electricamente,de forma condiciona- da,un segmento generador de potencia de una disposicion fo- tovoltaica
KR840003924A (ko) 태양전지 및 그 제조방법
EP0494090A3 (de) Fotovoltaische Vorrichtung
EP0265251A3 (en) Heterojunction p-i-n-photovoltaic cell
ATE29340T1 (de) Integrierbares hallelement.
CA1252874A (en) FAILURE-INSENSITIVE THIN-FILM PHOTOVOLTAIC CELL
US4454372A (en) Photovoltaic battery
DE3866899D1 (de) Solarzellenmodul mit parallel und seriell angeordneten solarzellen.
GB8414613D0 (en) Insulating for electrochemical cells
ES8305536A1 (es) Estructura de pila de combustible electroquimica mejorada.
DE60212594D1 (de) Solarzellenstruktur mit über der ganzen oberfläche verteilte, elektrische kontakte
DE3780817D1 (de) Sonnenzelle mit verbesserten elektrischen kontakten.
US6013870A (en) Thin-film solar module
WO2005004242A3 (en) Solar cell with an electrically insulating layer under the busbar
EP0311690A4 (de) Integrierte sonnenzelle und herstellungsverfahren.
US4533783A (en) AC solar cell with alternately generated pn junctions
JPS5685875A (en) Solar battery
JPS5617081A (en) Solar cell structure
JPS61199672A (ja) 光起電力装置
JPS5651880A (en) Amorphous semiconductor photocell
ES539483A0 (es) Pila de combustible consistente al menos en un anodo y un catodo
GB1387244A (en) Solar cells
ATE231651T1 (de) Brennstoffzelle mit eingebautem spannungswandler

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties