ATE168819T1 - Makroteilchenfilter in lichtbogenquelle - Google Patents

Makroteilchenfilter in lichtbogenquelle

Info

Publication number
ATE168819T1
ATE168819T1 AT92907222T AT92907222T ATE168819T1 AT E168819 T1 ATE168819 T1 AT E168819T1 AT 92907222 T AT92907222 T AT 92907222T AT 92907222 T AT92907222 T AT 92907222T AT E168819 T1 ATE168819 T1 AT E168819T1
Authority
AT
Austria
Prior art keywords
pct
arc source
particles
sec
date
Prior art date
Application number
AT92907222T
Other languages
English (en)
Inventor
Philip James Martin
Roger Netterfield
Terence John Kinder
Original Assignee
Commw Scient Ind Res Org
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commw Scient Ind Res Org filed Critical Commw Scient Ind Res Org
Application granted granted Critical
Publication of ATE168819T1 publication Critical patent/ATE168819T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Materials For Photolithography (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Radiation-Therapy Devices (AREA)
  • Plasma Technology (AREA)
AT92907222T 1991-03-25 1992-03-25 Makroteilchenfilter in lichtbogenquelle ATE168819T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPK528291 1991-03-25

Publications (1)

Publication Number Publication Date
ATE168819T1 true ATE168819T1 (de) 1998-08-15

Family

ID=3775299

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92907222T ATE168819T1 (de) 1991-03-25 1992-03-25 Makroteilchenfilter in lichtbogenquelle

Country Status (7)

Country Link
US (1) US5433836A (de)
EP (1) EP0577667B1 (de)
JP (1) JPH06508235A (de)
AT (1) ATE168819T1 (de)
CA (1) CA2106598A1 (de)
DE (1) DE69226360T2 (de)
WO (1) WO1992016959A1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69227313T2 (de) * 1991-04-29 1999-04-08 Scientific-Industrial Enterprise Novatech, Moscow Verfahren und vorrichtung zur behandlung von bauteilen in einem gasentladungsplasma
DE4208764C2 (de) * 1992-03-19 1994-02-24 Kernforschungsz Karlsruhe Gasgefüllter Teilchenbeschleuniger
AUPM365594A0 (en) * 1994-02-02 1994-02-24 Australian National University, The Method and apparatus for coating a substrate
US5480527A (en) * 1994-04-25 1996-01-02 Vapor Technologies, Inc. Rectangular vacuum-arc plasma source
GB9503305D0 (en) 1995-02-20 1995-04-12 Univ Nanyang Filtered cathodic arc source
GB9503304D0 (en) * 1995-02-20 1995-04-12 Univ Nanyang Deposition apparatus
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5518597A (en) * 1995-03-28 1996-05-21 Minnesota Mining And Manufacturing Company Cathodic arc coating apparatus and method
US5738768A (en) * 1995-10-31 1998-04-14 Caterpillar Inc. Process for reducing particle defects in arc vapor deposition coatings
JPH10168565A (ja) * 1996-12-13 1998-06-23 Mitsubishi Electric Corp イオン化ｐｖｄ装置および半導体装置の製造方法
US6027619A (en) * 1996-12-19 2000-02-22 Micron Technology, Inc. Fabrication of field emission array with filtered vacuum cathodic arc deposition
WO1998045871A1 (en) 1997-04-04 1998-10-15 Alexander Igorevich Dodonov Producing electric arc plasma in a curvilinear plasmaguide and substrate coating
DE19739527C2 (de) * 1997-09-09 2003-10-16 Rossendorf Forschzent Vakuumbogen-Plasmaquelle mit Magnet-Partikelfilter
GB9722649D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
US7014738B2 (en) 1997-10-24 2006-03-21 Filplas Vacuum Technology Pte Ltd. Enhanced macroparticle filter and cathode arc source
GB9722645D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Enhanced macroparticle filter and cathode arc source
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US5976636A (en) * 1998-03-19 1999-11-02 Industrial Technology Research Institute Magnetic apparatus for arc ion plating
TWI242049B (en) * 1999-01-14 2005-10-21 Kobe Steel Ltd Vacuum arc evaporation source and vacuum arc vapor deposition apparatus
US6465793B1 (en) * 1999-03-31 2002-10-15 The Regents Of The University Of California Arc initiation in cathodic arc plasma sources
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
DE19924094C2 (de) * 1999-05-21 2003-04-30 Fraunhofer Ges Forschung Vakuumbogenverdampfer und Verfahren zu seinem Betrieb
RU2186151C2 (ru) * 1999-12-29 2002-07-27 Закрытое акционерное общество "Патинор Коутингс Лимитед" Устройство для нанесения покрытий в вакууме
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7300559B2 (en) * 2000-04-10 2007-11-27 G & H Technologies Llc Filtered cathodic arc deposition method and apparatus
CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US6758949B2 (en) * 2002-09-10 2004-07-06 Applied Materials, Inc. Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities
US6903511B2 (en) * 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
AU2003903532A0 (en) * 2003-07-09 2003-07-24 Cochlear Limited Conductive elements
US7381311B2 (en) * 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
US20060204861A1 (en) * 2005-03-14 2006-09-14 Eyal Ben-Eliezer Optical mask for all-optical extended depth-of-field for imaging systems under incoherent illumination
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
WO2008004240A2 (en) * 2006-07-06 2008-01-10 Ramot At Tel Aviv University Ltd. Device and method for thin film deposition using a vacuum arc in an enclosed cathode-anode assembly
US20090109387A1 (en) * 2006-12-08 2009-04-30 Canon Kabushiki Kaisha Liquid crystal optical device manufacturing process
US8157976B2 (en) * 2007-04-26 2012-04-17 Veeco Instruments, Inc. Apparatus for cathodic vacuum-arc coating deposition
JP2008304608A (ja) * 2007-06-06 2008-12-18 Canon Inc 液晶素子およびその製造方法
CN101321427B (zh) * 2008-07-22 2011-03-16 核工业西南物理研究院 直流磁过滤阴极真空弧等离子体源
US8461042B2 (en) * 2009-12-01 2013-06-11 Cochlear Limited Electrode contact contaminate removal
US20110130815A1 (en) * 2009-12-01 2011-06-02 Peter Gibson Contoured electrode contact surfaces
US8782884B2 (en) * 2009-12-01 2014-07-22 Cochlear Limited Manufacturing an electrode assembly having contoured electrode contact surfaces
US9683285B2 (en) * 2013-03-25 2017-06-20 The Regents Of The University Of California Filters for blocking macroparticles in plasma deposition apparatus
JP5923547B2 (ja) * 2014-04-21 2016-05-24 アドバンス理工株式会社 微粒子形成装置およびその方法
KR200487382Y1 (ko) 2014-08-04 2018-09-07 수라사크 수린퐁 음극 아크 플라즈마 증착 시스템에 사용되는 아크 이온 증발기용 필터 장치
CN111741582A (zh) * 2020-07-02 2020-10-02 安徽纯源镀膜科技有限公司 用于等离子体传送的传输通道装置及镀膜设备
CN114883164B (zh) * 2022-04-20 2024-07-02 华南理工大学 一种基于过滤弧源的离子注入沉积装置及沉积方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483110A (en) * 1967-05-19 1969-12-09 Bell Telephone Labor Inc Preparation of thin films of vanadium dioxide
US3899407A (en) * 1973-08-01 1975-08-12 Multi State Devices Ltd Method of producing thin film devices of doped vanadium oxide material
US4146810A (en) * 1977-12-29 1979-03-27 International Business Machines Corporation Radiation heated acceleration
US4371774A (en) * 1980-11-26 1983-02-01 The United States Of America As Represented By The United States Department Of Energy High power linear pulsed beam annealer
JPS57182864U (de) * 1981-05-18 1982-11-19
US4452686A (en) * 1982-03-22 1984-06-05 Axenov Ivan I Arc plasma generator and a plasma arc apparatus for treating the surfaces of work-pieces, incorporating the same arc plasma generator
IN160089B (de) * 1982-07-14 1987-06-27 Standard Oil Co Ohio
FR2560426A1 (fr) * 1984-02-28 1985-08-30 Commissariat Energie Atomique Dispositif de production d'ions d'une espece determinee, utilisant pour les separer d'autres ions, une selection en energie, application a l'implantation ionique
US4654231A (en) * 1985-05-21 1987-03-31 The United States Of America As Represented By The Secretary Of The Navy Vanadium dioxide film deposition
WO1987002072A1 (en) * 1985-09-30 1987-04-09 Union Carbide Corporation Apparatus and process for arc vapor depositing a coating in an evacuated chamber
JPS62108438A (ja) * 1985-11-01 1987-05-19 バリアン・アソシエイツ・インコ−ポレイテツド 空間電荷レンズを使用した高電流質量分光計
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
EP0309733A1 (de) * 1987-09-26 1989-04-05 Detlev Dr. Repenning Verfahren zur Herstellung von wenigstens 2-komponentigen Schichten mit hochharten und/oder reibarmen Eigenschaften
FI79351C (fi) * 1988-01-18 1989-12-11 Asko Anttila Foerfarande och anordning foer ytbelaeggning av material.
CS275226B2 (en) * 1989-09-13 1992-02-19 Fyzikalni Ustav Csav Method of arc discharge's cathode vaporization with cathode spots and macroparticles' reduced emission and device for realization of this method
US5126030A (en) * 1990-12-10 1992-06-30 Kabushiki Kaisha Kobe Seiko Sho Apparatus and method of cathodic arc deposition
US5279723A (en) * 1992-07-30 1994-01-18 As Represented By The United States Department Of Energy Filtered cathodic arc source
US5317235A (en) * 1993-03-22 1994-05-31 Ism Technolog Magnetically-filtered cathodic arc plasma apparatus

Also Published As

Publication number Publication date
EP0577667A4 (de) 1994-02-23
DE69226360T2 (de) 1999-02-25
JPH06508235A (ja) 1994-09-14
EP0577667B1 (de) 1998-07-22
WO1992016959A1 (en) 1992-10-01
DE69226360D1 (de) 1998-08-27
CA2106598A1 (en) 1992-09-26
EP0577667A1 (de) 1994-01-12
US5433836A (en) 1995-07-18

Similar Documents

Publication Publication Date Title
ATE168819T1 (de) Makroteilchenfilter in lichtbogenquelle
TW402759B (en) Plasma vapor deposition with the coil sputtering
US6026763A (en) Thin-film deposition apparatus using cathodic arc discharge
US5468363A (en) Magnetic-cusp, cathodic-arc source
CA2190086A1 (en) An Electron Jet Vapor Deposition System
DE69531240D1 (de) Rechteckige vakuumlichtbogenplasmaquelle
ATE104089T1 (de) Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage.
EP0093831A2 (de) Vorrichtung und Verfahren zur Erzeugung eines neutralisierten Niedrigenergie-Ionenstrahles, und Verfahren zur Erzeugung eines neutralisierten Hochenergie-Ionenstrahles
EP1094493A3 (de) Anwendung von modulierter induktiver Leistung und Vorspannungsleistung zur Reduzierung von Überhängen und zur Verbesserung der Bodenbeschichtung
ATE139268T1 (de) Einrichtung zum plasmagestützten elektronenstrahl-hochratebedampfen
GB2258343A (en) Magnetron sputter ion plating
GB2228268A (en) Facing targets sputtering device
DE69222211D1 (de) Elektronzyklotronresonanz-Ionentriebwerk
GB2347148A (en) Enhanced macroparticle filter and cathode arc source
ZA912916B (en) Spray deposition of metals
SG40883A1 (en) Apparatus for coating substrates in a vacuum
EP0413291A2 (de) Verfahren und Vorrichtung zum Sputterauftragen von Filmen
TW276348B (en) Apparatus for coating a substrate
JPS56116256A (en) Flat cathode ray tube
EP0099725A3 (de) Vorrichtung zur Erzeugung eines sich nicht im lokalen thermodynamischen Gleichgewicht befindenden, Hochdruck-Plasmabogens zum Aufbringen von Schichten auf Substraten
Robinson et al. Characteristics of a dual purpose cathodic arc/magnetron sputtering system
Zhang et al. Wall sheath and optimal bias in magnetic filters for vacuum arc plasma sources
CN1004558B (zh) 枪式磁控溅射源
JPS5668932A (en) Manufacture of magnetic recording medium
RU2032766C1 (ru) Магнетронное распылительное устройство

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties