ATE151199T1 - Plasmaätzvorrichtung mit magnetfeldverstärkung - Google Patents

Plasmaätzvorrichtung mit magnetfeldverstärkung

Info

Publication number
ATE151199T1
ATE151199T1 AT93201991T AT93201991T ATE151199T1 AT E151199 T1 ATE151199 T1 AT E151199T1 AT 93201991 T AT93201991 T AT 93201991T AT 93201991 T AT93201991 T AT 93201991T AT E151199 T1 ATE151199 T1 AT E151199T1
Authority
AT
Austria
Prior art keywords
wafer
gas
electrode
magnetic field
pedestal
Prior art date
Application number
AT93201991T
Other languages
English (en)
Inventor
David Cheng
Dan Maydan
Sasson Somekh
Kenneth R Stalder
Dana L Andrews
Mei Chang
John M White
Jerry Yuen Kui Wong
Vladimir J Zeitlin
David Nin-Kou Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE151199T1 publication Critical patent/ATE151199T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Epidemiology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)
AT93201991T 1986-12-19 1987-12-18 Plasmaätzvorrichtung mit magnetfeldverstärkung ATE151199T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94484386A 1986-12-19 1986-12-19

Publications (1)

Publication Number Publication Date
ATE151199T1 true ATE151199T1 (de) 1997-04-15

Family

ID=25482161

Family Applications (2)

Application Number Title Priority Date Filing Date
AT87311195T ATE111261T1 (de) 1986-12-19 1987-12-18 Plasmaätzvorrichtung mit magnetfeldverstärkung.
AT93201991T ATE151199T1 (de) 1986-12-19 1987-12-18 Plasmaätzvorrichtung mit magnetfeldverstärkung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT87311195T ATE111261T1 (de) 1986-12-19 1987-12-18 Plasmaätzvorrichtung mit magnetfeldverstärkung.

Country Status (5)

Country Link
EP (2) EP0272142B1 (de)
JP (1) JP2624975B2 (de)
AT (2) ATE111261T1 (de)
DE (2) DE3752042T2 (de)
ES (1) ES2058132T3 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
ES2081806T3 (es) * 1987-06-26 1996-03-16 Applied Materials Inc Procedimiento de autolimpieza de una camara de reactor.
US4944860A (en) * 1988-11-04 1990-07-31 Eaton Corporation Platen assembly for a vacuum processing system
JP2886878B2 (ja) * 1989-03-01 1999-04-26 株式会社日立製作所 真空処理装置
KR0170391B1 (ko) * 1989-06-16 1999-03-30 다카시마 히로시 피처리체 처리장치 및 처리방법
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
JPH03142828A (ja) * 1989-10-27 1991-06-18 Tokyo Electron Ltd 処理装置
JP2875945B2 (ja) * 1993-01-28 1999-03-31 アプライド マテリアルズ インコーポレイテッド Ｃｖｄにより大面積のガラス基板上に高堆積速度でシリコン窒化薄膜を堆積する方法
KR960006958B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알 장비
US5427621A (en) * 1993-10-29 1995-06-27 Applied Materials, Inc. Method for removing particulate contaminants by magnetic field spiking
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US6391147B2 (en) 1994-04-28 2002-05-21 Tokyo Electron Limited Plasma treatment method and apparatus
US5738751A (en) * 1994-09-01 1998-04-14 Applied Materials, Inc. Substrate support having improved heat transfer
US5503676A (en) * 1994-09-19 1996-04-02 Lam Research Corporation Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber
TW347460B (en) * 1995-11-29 1998-12-11 Applied Materials Inc Flat bottom components and flat bottom architecture for fluid and gas systems
US6293749B1 (en) 1997-11-21 2001-09-25 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
EP1167572A3 (de) * 2000-06-22 2002-04-10 Applied Materials, Inc. Deckelanordnung für eine Halbleiterbehandlungskammer
JP4236873B2 (ja) * 2002-06-21 2009-03-11 東京エレクトロン株式会社 マグネトロンプラズマ処理装置
US7686918B2 (en) 2002-06-21 2010-03-30 Tokyo Electron Limited Magnetron plasma processing apparatus
WO2004088710A2 (en) * 2003-04-02 2004-10-14 Nkt Research & Innovation A/S Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof
FR2920912B1 (fr) * 2007-09-12 2010-08-27 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure par transfert de couche

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159799A (en) * 1977-12-14 1979-07-03 Bell Telephone Laboratories, Incorporated Cassette unit and fixture for loading the unit with a planar member
JPS5927212B2 (ja) * 1979-09-25 1984-07-04 三菱電機株式会社 プラズマ反応装置
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPH0669032B2 (ja) * 1984-07-24 1994-08-31 富士通株式会社 プラズマ処理装置
DE3580953D1 (de) * 1984-08-31 1991-01-31 Anelva Corp Entladungsvorrichtung.
US4657620A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Automated single slice powered load lock plasma reactor
JPS61119040A (ja) * 1984-11-15 1986-06-06 Tokyo Denshi Kagaku Kabushiki 真空処理装置
JPH054282Y2 (de) * 1984-12-04 1993-02-02
JPH0666300B2 (ja) * 1985-03-18 1994-08-24 株式会社日立製作所 ドライエッチング装置
US4624728A (en) * 1985-06-11 1986-11-25 Tegal Corporation Pin lift plasma processing
US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
US4677758A (en) * 1985-10-08 1987-07-07 Seiichiro Aigo Spin drier for semiconductor material
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
US4724621A (en) * 1986-04-17 1988-02-16 Varian Associates, Inc. Wafer processing chuck using slanted clamping pins

Also Published As

Publication number Publication date
DE3750502D1 (de) 1994-10-13
JPS63283024A (ja) 1988-11-18
EP0272142B1 (de) 1994-09-07
ATE111261T1 (de) 1994-09-15
EP0272142A3 (en) 1990-09-05
EP0566220A2 (de) 1993-10-20
JP2624975B2 (ja) 1997-06-25
EP0272142A2 (de) 1988-06-22
DE3752042D1 (de) 1997-05-07
EP0566220A3 (de) 1993-10-27
EP0566220B1 (de) 1997-04-02
DE3752042T2 (de) 1997-07-17
ES2058132T3 (es) 1994-11-01
DE3750502T2 (de) 1995-01-12

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