ATA119098A - Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat - Google Patents

Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat

Info

Publication number
ATA119098A
ATA119098A AT0119098A AT119098A ATA119098A AT A119098 A ATA119098 A AT A119098A AT 0119098 A AT0119098 A AT 0119098A AT 119098 A AT119098 A AT 119098A AT A119098 A ATA119098 A AT A119098A
Authority
AT
Austria
Prior art keywords
producing
substrate
carbon film
carbon
film
Prior art date
Application number
AT0119098A
Other languages
English (en)
Inventor
Hans Dr Loeschner
Ivaylo W Rangelow
Pavol Dipl Ing Dr Hrkut
Peter Dipl Ing Dr Hudek
Original Assignee
Ims Ionen Mikrofab Syst
Univ Gesamthochschule Kassel
Ustav Pocitacovych Systemov Sl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ims Ionen Mikrofab Syst, Univ Gesamthochschule Kassel, Ustav Pocitacovych Systemov Sl filed Critical Ims Ionen Mikrofab Syst
Priority to AT0119098A priority Critical patent/ATA119098A/de
Publication of ATA119098A publication Critical patent/ATA119098A/de
Priority to DE19930133A priority patent/DE19930133A1/de
Priority to US09/349,936 priority patent/US6136160A/en
Priority to JP11194696A priority patent/JP2000073166A/ja

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
AT0119098A 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat ATA119098A (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT0119098A ATA119098A (de) 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat
DE19930133A DE19930133A1 (de) 1998-07-09 1999-06-30 Verfahren zur Erzeugung eines Kohlenstoffilmes auf einem Substrat
US09/349,936 US6136160A (en) 1998-07-09 1999-07-08 Process for producing a carbon film on a substrate
JP11194696A JP2000073166A (ja) 1998-07-09 1999-07-08 基板上への炭素皮膜の生成方法及びそれによって得られた炭素皮膜を有する基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0119098A ATA119098A (de) 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat

Publications (1)

Publication Number Publication Date
ATA119098A true ATA119098A (de) 1999-05-15

Family

ID=3508564

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0119098A ATA119098A (de) 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat

Country Status (4)

Country Link
US (1) US6136160A (de)
JP (1) JP2000073166A (de)
AT (1) ATA119098A (de)
DE (1) DE19930133A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118200A1 (de) * 2001-04-11 2002-10-24 Infineon Technologies Ag Gas-Sensorelement, Verfahren zum Herstellen eines Gas-Sensorelements und Verfahren zur Detektion von Gasen
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
GB2399676B (en) * 2003-03-21 2006-02-22 Ims Ionen Mikrofab Syst Apparatus for enhancing the lifetime of stencil masks
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
CA2526946A1 (en) 2003-05-14 2005-04-07 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
WO2005001899A2 (en) 2003-06-09 2005-01-06 Nantero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7989067B2 (en) * 2003-06-12 2011-08-02 Georgia Tech Research Corporation Incorporation of functionalizing molecules in nanopatterned epitaxial graphene electronics
US7015142B2 (en) * 2003-06-12 2006-03-21 Georgia Tech Research Corporation Patterned thin film graphite devices and method for making same
WO2005048296A2 (en) 2003-08-13 2005-05-26 Nantero, Inc. Nanotube-based switching elements with multiple controls and circuits made from same
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
JP2011507131A (ja) * 2007-12-06 2011-03-03 インテバック・インコーポレイテッド パターン化媒体を商業的に製造するシステム及び方法
US8460764B2 (en) * 2008-03-06 2013-06-11 Georgia Tech Research Corporation Method and apparatus for producing ultra-thin graphitic layers
US20090236608A1 (en) * 2008-03-18 2009-09-24 Georgia Tech Research Corporation Method for Producing Graphitic Patterns on Silicon Carbide
US8497499B2 (en) * 2009-10-12 2013-07-30 Georgia Tech Research Corporation Method to modify the conductivity of graphene
US9171907B2 (en) 2011-09-27 2015-10-27 Georgia Tech Research Corporation Graphene transistor
US9627790B2 (en) 2012-10-04 2017-04-18 Fci Americas Technology Llc Electrical contact including corrosion-resistant coating
JP6472016B2 (ja) * 2014-09-25 2019-02-20 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置の製造方法
CN113088913B (zh) * 2021-04-13 2022-03-29 安徽工程大学 一种碳纤维改性方法及其产品

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252367A (en) * 1989-10-27 1993-10-12 Kabushiki Kaisha Kobe Seiko Sho Method of manufacturing a magnetic recording medium
US5232570A (en) * 1991-06-28 1993-08-03 Digital Equipment Corporation Nitrogen-containing materials for wear protection and friction reduction
JPH06145975A (ja) * 1992-03-20 1994-05-27 Komag Inc 炭素フィルムをスパタリングする方法及びその製造物
US5573864A (en) * 1994-10-25 1996-11-12 The United States Of America As Represented By The Secretary Of Commerce Transparent carbon nitride films and compositions of matter comprising transparent carbon nitride films
FR2726579A1 (fr) * 1994-11-07 1996-05-10 Neuville Stephane Procede de depot d'un revetement protecteur de type pseudo carbonne diamant amorphe

Also Published As

Publication number Publication date
US6136160A (en) 2000-10-24
JP2000073166A (ja) 2000-03-07
DE19930133A1 (de) 2000-01-13

Similar Documents

Publication Publication Date Title
ATA119098A (de) Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat
DE59309438D1 (de) Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
DE69941652D1 (de) Verfahren zur Herstellung eines Silizium-auf-Isolator-Substrats
DE69528611T2 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69910614D1 (de) Verfahren zur herstellung einer verbundbeschichtung auf einem substrat
DE69711702T2 (de) Verfahren und vorrichtung zur herstellung einer kohlenstoffreichen beschichtung auf einem beweglichen substrat
DE69306110D1 (de) Verfahren zur herstellung eines bohrloches in einer untergrundformation
DE69531854D1 (de) Verfahren zur wiederholten abbildung eines maskenmusters auf einem substrat
DE69928198D1 (de) Verfahren zur erzeugung eines überzugsfilms und überzugszusammensetzung
DE69817881D1 (de) Verfahren zur herstellung eines laminats
DE69919742D1 (de) Verfahren zur herstellung eines bauteiles
DE69604235T2 (de) Verfahren zur herstellung eines siliziumeinkristalles mit niediger fehlerdichte
DE69819445D1 (de) Verfahren zur Herstellung eines Musters auf einem Substrat
DE69332511D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69209896D1 (de) Verfahren zur Herstellung degradierter Beschichtung auf einem Substrat
DE69333282D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE60003651D1 (de) Verfahren zur herstellung eines bohrloches in einer untergrundformation
DE19781838T1 (de) Verfahren zur Beschichtung eines Substrats
DE69835469D1 (de) Verfahren zur Herstellung eines geklebten Substrates
DE19758977B8 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE10081808T1 (de) Verfahren und Vorrichtung zur Ausbildung eines Filmes auf einem Substrat
DE69722185D1 (de) Verfahren zur nach-ätzung eines mechanisch behandelten substrats
DE69218276T2 (de) Verfahren zur Herstellung eines zusammengesetzten Films auf einem metallischen Substrat
DE69806551D1 (de) Verfahren zur Herstellung eines Mehrschicht-Überzugfilms
DE69802250D1 (de) Verfahren zur herstellung einer leitschicht auf einem substrat

Legal Events

Date Code Title Description
A1J Withdrawal paragraph 166 lit. 6