AT345897B - TRANSISTOR MADE OF INDIUMANTIMONIDE - Google Patents

TRANSISTOR MADE OF INDIUMANTIMONIDE

Info

Publication number
AT345897B
AT345897B AT1067170A AT1067170A AT345897B AT 345897 B AT345897 B AT 345897B AT 1067170 A AT1067170 A AT 1067170A AT 1067170 A AT1067170 A AT 1067170A AT 345897 B AT345897 B AT 345897B
Authority
AT
Austria
Prior art keywords
indiumantimonide
transistor made
transistor
Prior art date
Application number
AT1067170A
Other languages
German (de)
Other versions
ATA1067170A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA1067170A publication Critical patent/ATA1067170A/en
Application granted granted Critical
Publication of AT345897B publication Critical patent/AT345897B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
AT1067170A 1970-01-30 1970-11-26 TRANSISTOR MADE OF INDIUMANTIMONIDE AT345897B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702004345 DE2004345C3 (en) 1970-01-30 1970-01-30 Method of amplifying '"*" "" "" electrical signals and using a transistor to carry them through

Publications (2)

Publication Number Publication Date
ATA1067170A ATA1067170A (en) 1978-02-15
AT345897B true AT345897B (en) 1978-10-10

Family

ID=5761019

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1067170A AT345897B (en) 1970-01-30 1970-11-26 TRANSISTOR MADE OF INDIUMANTIMONIDE

Country Status (8)

Country Link
JP (1) JPS5418111B1 (en)
AT (1) AT345897B (en)
CH (1) CH524283A (en)
DE (1) DE2004345C3 (en)
FR (1) FR2083047A5 (en)
GB (1) GB1297089A (en)
NL (1) NL7101149A (en)
SE (1) SE370830B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175443A (en) * 1985-05-15 1986-11-26 Philips Electronic Associated Bipolar semiconductor device
US7902919B2 (en) * 2006-08-03 2011-03-08 Hiroshima University Current amplifying element and current amplification method

Also Published As

Publication number Publication date
DE2004345B2 (en) 1978-03-09
JPS5418111B1 (en) 1979-07-05
GB1297089A (en) 1972-11-22
CH524283A (en) 1972-06-15
FR2083047A5 (en) 1971-12-10
SE370830B (en) 1974-10-28
DE2004345C3 (en) 1978-10-26
DE2004345A1 (en) 1971-08-05
ATA1067170A (en) 1978-02-15
NL7101149A (en) 1971-08-03

Similar Documents

Publication Publication Date Title
AT315132B (en) Combination column consisting of several segments
FI53495C (en) OEVERHOERNINGSDAEMPANDE TILL-LUFTS- OCH FRAON-LUFTSDON I VENTILATIONSANLAEGGNINGAR
BE761447A (en) TERMINER
CH538115A (en) thermometer
AT309996B (en) Skibob
BE760036A (en) REKLAMEZUIL
ATA818171A (en) BUASTER
DE2112817B2 (en) SEMI-CONDUCTOR ARRANGEMENT
BE761406A (en) LICHTPROJECTIE-APPARAAT
BE761752A (en) GLASMATERIAL MARMERACHTIGE
AR220504A1 (en) RULERO
FI53444C (en) VAETSKEVAETSKE-SEPARERING AV KOBOLT UR AMMONIAKALISKA LOESNINGAR
BE760221A (en) RESONATOR-PIEZO-ELECTRIC
ATA437571A (en) STALLTUR
FI45408C (en) EXTRAKTIONSANORDNING FOER VAETSKEVAETSKE-EXTRAKTION I MOTSTROEM
BE762183A (en) SPROEIBUSKLEP
AT324988B (en) BACKKOPEN
BE755973A (en) STYLOGRAPH
AT345897B (en) TRANSISTOR MADE OF INDIUMANTIMONIDE
CH506188A (en) Field effect transistor
CH545038A (en) Transistor amplifier
JPS5136245A (en) SHIGAISENNITAISHIHORI * ARUFUA * OREFUINOANTEIKASURUHOHO
IT943651B (en) 4 HYDROXES 2 6 OF THIRD ALCYLFE NILCIANATI
BE763318A (en) COORDINATENLEZER
CH516873A (en) Lateral transistor structure

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee