AT300958B - Verfahren zur Herstellung eines Selengleichrichters - Google Patents
Verfahren zur Herstellung eines SelengleichrichtersInfo
- Publication number
- AT300958B AT300958B AT275370A AT275370A AT300958B AT 300958 B AT300958 B AT 300958B AT 275370 A AT275370 A AT 275370A AT 275370 A AT275370 A AT 275370A AT 300958 B AT300958 B AT 300958B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- selenium rectifier
- selenium
- rectifier
- Prior art date
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052711 selenium Inorganic materials 0.000 title 1
- 239000011669 selenium Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/101—Application of the selenium or tellurium to the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691922140 DE1922140B2 (de) | 1969-04-25 | 1969-04-25 | Verfahren zur herstellung eines selengleichrichters |
Publications (1)
Publication Number | Publication Date |
---|---|
AT300958B true AT300958B (de) | 1972-08-10 |
Family
ID=5732924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT275370A AT300958B (de) | 1969-04-25 | 1970-03-25 | Verfahren zur Herstellung eines Selengleichrichters |
Country Status (6)
Country | Link |
---|---|
US (1) | US3694908A (de) |
JP (1) | JPS4948085B1 (de) |
AT (1) | AT300958B (de) |
DE (1) | DE1922140B2 (de) |
FR (1) | FR2040221B1 (de) |
GB (1) | GB1300237A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5377937A (en) * | 1991-09-03 | 1995-01-03 | The Boeing Company | Aircraft flare control system utilizing an envelope limiter |
JP6570173B2 (ja) * | 2015-07-01 | 2019-09-04 | 日本放送協会 | 光電変換素子、光電変換素子の製造方法、固体撮像素子 |
JP6575997B2 (ja) * | 2015-07-30 | 2019-09-18 | 日本放送協会 | 光電変換素子、光電変換素子の製造方法、固体撮像素子 |
CN109850856B (zh) * | 2018-12-18 | 2022-05-03 | 广东先导稀材股份有限公司 | 高纯硒的掺氯方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR837345A (fr) * | 1937-10-26 | 1939-02-08 | Westinghouse Freins & Signaux | Procédé pour la fabrication d'éléments conducteurs électriques |
DE820318C (de) * | 1948-10-02 | 1951-11-08 | Siemens & Halske A G | Selenkoerper, insbesondere fuer Trockengleichrichter, Fotoelemente und lichtempfindliche Widerstandszellen |
US2745047A (en) * | 1951-12-14 | 1956-05-08 | Itt | Selenium rectifiers and method of manufacture |
CH327896A (de) * | 1953-07-16 | 1958-02-15 | Siemens Ag | Verfahren zur Herstellung eines Störstellen-Halbleiterwerkstoffes hoher Leitfähigkeit |
US3484657A (en) * | 1966-07-11 | 1969-12-16 | Susanna Gukasovna Madoian | Semiconductor device having intermetallic compounds providing stable parameter vs. time characteristics |
-
1969
- 1969-04-25 DE DE19691922140 patent/DE1922140B2/de active Pending
-
1970
- 1970-03-25 AT AT275370A patent/AT300958B/de not_active IP Right Cessation
- 1970-04-15 US US31126A patent/US3694908A/en not_active Expired - Lifetime
- 1970-04-22 GB GB09382/70A patent/GB1300237A/en not_active Expired
- 1970-04-24 FR FR7014975A patent/FR2040221B1/fr not_active Expired
- 1970-04-25 JP JP45035843A patent/JPS4948085B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1300237A (en) | 1972-12-20 |
DE1922140A1 (de) | 1970-11-12 |
US3694908A (en) | 1972-10-03 |
JPS4948085B1 (de) | 1974-12-19 |
DE1922140B2 (de) | 1976-08-26 |
FR2040221B1 (de) | 1975-01-10 |
FR2040221A1 (de) | 1971-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |