WO2021153450A1 - 電子部品搭載用パッケージおよび電子装置 - Google Patents
電子部品搭載用パッケージおよび電子装置 Download PDFInfo
- Publication number
- WO2021153450A1 WO2021153450A1 PCT/JP2021/002225 JP2021002225W WO2021153450A1 WO 2021153450 A1 WO2021153450 A1 WO 2021153450A1 JP 2021002225 W JP2021002225 W JP 2021002225W WO 2021153450 A1 WO2021153450 A1 WO 2021153450A1
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- Prior art keywords
- electronic component
- outer edge
- insulating substrate
- recess
- component mounting
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- 239000000758 substrate Substances 0.000 claims abstract description 132
- 239000000463 material Substances 0.000 claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 238000005304 joining Methods 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 76
- 239000011241 protective layer Substances 0.000 description 20
- 238000005219 brazing Methods 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000007606 doctor blade method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- This disclosure relates to a package for mounting electronic components and an electronic device.
- the electronic component mounting package of the present disclosure includes a metal substrate having a recess and an insulating substrate having an electronic component mounting surface, and the insulating substrate is located on the bottom surface of the recess via a bonding material.
- the bonding material is located within the insulating substrate in frontal perspective with respect to the opening of the recess.
- the electronic device of the present disclosure includes an electronic component mounting package having the above configuration and an electronic component mounted in the electronic component mounting package.
- FIG. 1A is a top view showing a package for mounting electronic components according to the first embodiment.
- FIG. 1B is a bottom view showing the electronic component mounting package in FIG. 1A.
- FIG. 2A is a cross-sectional view taken along the line AA of the electronic component mounting package shown in FIG. 1A.
- FIG. 2B is an enlarged cross-sectional view of a main part in part A of FIG. 2A.
- 1A and 1B are cross-sectional views showing an electronic device in which an electronic component is mounted in the package for mounting the electronic component in FIGS. 1A and 1B.
- FIG. 4A is a cross-sectional view showing another example of the electronic component mounting package according to the first embodiment.
- FIG. 4A is a cross-sectional view showing another example of the electronic component mounting package according to the first embodiment.
- FIG. 4B is an enlarged cross-sectional view of a main part of the part A of FIG. 4A.
- FIG. 5A is a cross-sectional view showing another example of the electronic component mounting package according to the first embodiment.
- FIG. 5B is an enlarged cross-sectional view of a main part in part A of FIG. 5A.
- FIG. 6A is a top view showing a package for mounting electronic components in the second embodiment.
- FIG. 6B is a top view showing the metal substrate of the electronic component mounting package in FIG. 6A.
- FIG. 7A is a cross-sectional view taken along the line AA of the electronic component mounting package shown in FIG. 6A.
- FIG. 7B is an enlarged cross-sectional view of a main part of the part A of FIG. 7A.
- FIG. 8A is a cross-sectional view showing a package for mounting electronic components according to the third embodiment.
- FIG. 8B is an enlarged cross-sectional view of a main part of the part A of FIG
- the electronic component mounting package 1 in the present embodiment includes a metal substrate 11 having a recess 12 and an insulating substrate 21 having a mounting surface for the electronic component 2.
- the insulating substrate 21 is located on the bottom surface 12a in the recess 12 via the bonding material 31.
- the joining material 31 is located within the insulating substrate 21 in frontal perspective with respect to the opening of the recess 12.
- the insulating substrate 21 has a wiring layer 22 located on the third surface described later and a bonding layer 23 located on the fourth surface described later.
- the upward direction means the positive direction of the virtual z-axis. It should be noted that the distinction between the upper and lower parts in the following description is for convenience, and does not limit the upper and lower parts when the electronic component mounting package 1 and the like are actually used.
- the metal substrate 11 has a first surface (upper surface in FIGS. 1A to 2B), a second surface (lower surface in FIGS. 1A to 2B) and a side surface opposite to the first surface in the thickness direction.
- a material having high thermal conductivity for example, a metal material such as aluminum (Al) or copper (Cu) or copper-tungsten (Cu-W) can be used.
- the metal substrate 11 may be aluminum because it has excellent reflectance to a light emitting element for UV (Ultraviolet) and is lightweight.
- the metal substrate 11 has a frame-shaped recess 12 which is open to the first surface and has a bottom surface 12a and an inner side surface and an outer surface.
- the recess 12 functions as an indicator for mounting and supporting the insulating substrate 21 on the bottom surface 12a of the recess 12.
- the recess 12 is formed on the first surface of the metal substrate 11 by cutting, laser processing, or the like.
- the metal substrate 11 is made of copper (Cu) or copper-tungsten, a metal film such as aluminum having excellent reflectance for a light emitting element for UV may be adhered to the inner surface of the recess 12.
- the recess 12 has a wider opening side of the recess 12 than the bottom surface 12a side of the recess 12 (in FIGS. 1A to 2B, a square base having a large opening side on the first surface of the metal substrate 11).
- the inner surface of the recess 12 is inclined so as to be a space of shape).
- the insulating substrate 21 has a third surface (upper surface in FIGS. 1A to 2B), a fourth surface (lower surface in FIGS. 1A to 2B) and a side surface opposite to the third surface in the thickness direction.
- the insulating substrate 21 is composed of a single layer or a plurality of insulating layers, and the insulating substrate 21 has a rectangular shape when viewed in a plan view, that is, when viewed from a direction perpendicular to a third surface.
- the insulating substrate 21 functions as a support for supporting the electronic component 2.
- the insulating substrate 21 has a wiring layer 22 for mounting the electronic component 2 on the third surface side in a plan view, and a bonding layer 23 for joining the metal substrate 11 on the fourth surface side in a plan view. is doing.
- ceramics such as an aluminum oxide sintered body (alumina ceramics), an aluminum nitride material sintered body, a silicon nitride material sintered body, a mulite material sintered body, or a glass ceramics sintered body may be used.
- ceramics such as an aluminum oxide sintered body (alumina ceramics), an aluminum nitride material sintered body, a silicon nitride material sintered body, a mulite material sintered body, or a glass ceramics sintered body may be used.
- alumina ceramics aluminum oxide sintered body
- an aluminum nitride material sintered body, a silicon nitride material sintered body, a mulite material sintered body, or a glass ceramics sintered body may be used.
- the insulating substrate 21 is an organic material suitable for raw material powders such as aluminum nitride (AlN), erbium oxide (Er 2 O 3 ), and yttrium oxide (Y 2 O 3).
- AlN aluminum nitride
- Er 2 O 3 erbium oxide
- Y 2 O 3 yttrium oxide
- a binder, a solvent, etc. are added and mixed to prepare a slurry.
- a ceramic green sheet is produced by molding the above-mentioned slurry into a sheet shape by adopting a conventionally known doctor blade method, calendar roll method, or the like. If necessary, a plurality of ceramic green sheets are laminated and fired at a high temperature (about 1800 ° C.) to produce an insulating substrate 21 composed of a single layer or a plurality of insulating layers.
- the wiring layer 22 is located on the third surface of the insulating substrate 21 as shown in the examples of FIGS. 1A to 2B.
- the wiring layer 22 is used as a connecting portion of a connecting member 3 such as a solder bump, and is for electrically connecting the electronic component 2 and the connecting pad of the module substrate.
- the bonding layer 23 is located on the fourth surface of the insulating substrate 21 as shown in the examples of FIGS. 2A and 2B.
- the joining layer 23 is used as a joining portion of the joining material 31 and the like, and is for joining the metal substrate 11 and the insulating substrate 21.
- the wiring layer 22 and the bonding layer 23 include a thin film layer and a plating layer.
- the thin film layer has, for example, an adhesive metal layer and a barrier layer.
- the close contact metal layer constituting the thin film layer is formed on the third surface or the fourth surface of the insulating substrate 21.
- the adhesive metal layer is composed of, for example, tantalum nitride, nickel-chromium, nickel-chromium-silicon, tungsten-silicon, molybdenum-silicon, tungsten, molybdenum, titanium, chromium, etc., and is composed of a vapor deposition method, an ion plating method, a sputtering method, etc.
- the insulating substrate 21 is installed in the film forming chamber of the vacuum vapor deposition apparatus, and a metal piece to be an adhesive metal layer is arranged at the vapor deposition source in the film forming chamber. After that, the film forming chamber is put into a vacuum state (pressure of 10-2 Pa or less), and the metal pieces arranged in the vapor deposition source are heated and vapor-deposited, and the molecules of the vapor-deposited metal pieces are covered on the insulating substrate 21. By attaching, a thin film metal layer to be an adhesive metal layer is formed.
- a resist pattern is formed on the insulating substrate 21 on which the thin film metal layer is formed by a photolithography method, and then the excess thin film metal layer is removed by etching to form an adhesive metal layer.
- a barrier layer is adhered to the upper surface of the adhesive metal layer, and the barrier layer has good bondability and wettability between the adhesive metal layer and the plating layer. It acts to make it difficult for mutual diffusion with the layer.
- the barrier layer is made of, for example, nickel-chromium, platinum, palladium, nickel, cobalt, etc., and is adhered to the surface of the adhesion metal layer by a thin film forming technique such as a thin film deposition method, an ion plating method, or a sputtering method.
- the thickness of the adhesive metal layer should be about 0.01 to 0.5 ⁇ m. If it is less than 0.01 ⁇ m, it tends to be difficult to firmly adhere the adherent metal layer on the metal substrate 11. If it exceeds 0.5 ⁇ m, the adhesive metal layer is likely to be peeled off due to the internal stress during film formation of the adhesive metal layer.
- the thickness of the barrier layer is preferably about 0.05 to 1 ⁇ m. If it is less than 0.05 ⁇ m, defects such as pinholes tend to occur, making it difficult to function as a barrier layer. If it exceeds 1 ⁇ m, the barrier layer is likely to be peeled off due to the internal stress during film formation.
- the plating layer is adhered to the exposed surface of the thin film layer by an electrolytic plating method or an electroless plating method.
- the plating layer is made of a metal such as nickel, copper, gold or silver, which has excellent corrosion resistance and connectivity with the connecting member 3.
- the plating layer and the plating layer are sequentially adhered. As a result, the wiring layer 22 and the bonding layer 23 can be effectively prevented from corroding, and the bonding between the wiring layer 22 and the connecting member 3 and the bonding between the bonding layer 23 and the metal substrate 11 can be strengthened.
- a metal layer such as copper (Cu) or gold (Au) may be arranged on the barrier layer so that the plating layer can be formed well.
- the metal layer is formed by the same method as the thin film layer.
- the bonding material 31 is located between the bottom surface 12a of the recess 12 of the metal substrate 11 and the surface opposite to the mounting surface of the insulating substrate 21, and is formed between the bottom surface 12a of the recess 12 of the metal substrate 11 and the bonding layer 23 of the insulating substrate 21.
- the joining material 31 is located in the insulating substrate 21 as in the examples shown in FIGS. 1A to 2B in frontal perspective with respect to the opening of the recess 12. That is, the outer edge 31a of the joining material 31 is located inside the outer edge 21a of the insulating substrate 21.
- the metal substrate 11 has a protective layer 13 on the inner surface of the recess 12 as shown in the example shown in FIG. 2B.
- the inner end of the protective layer 13 is located inside the outer edge 21a of the insulating substrate 21.
- the outer edge 31a of the joining material 31 on the bottom surface 12a side of the recess 12 is located so as to be in contact with the inner end of the protective layer 13, and the outer edge 31a of the joining member 31 is located inside the outer edge 21a of the insulating substrate 21. is doing.
- the protective layer 13 is made of, for example, aluminum oxide.
- the protective layer 13 is formed to have a thickness of about 0.1 nm to 10 nm.
- the protective layer 13 has a metal film such as aluminum having excellent reflectance to a light emitting element for UV on the inner surface of the recess 12.
- the protective layer 13 may be formed on the surface of the metal film. Since the protective layer 13 is used as a reflecting surface for the UV light emitting element on the inner surface of the recess 12, it may be located on the entire inner surface of the recess 12.
- the inner surface (inner side surface and bottom surface 12a) of the recess 12 of the metal substrate 11 is oxidized to form the protective layer 13 made of aluminum oxide.
- the protective layer 13 formed on the bottom surface 12a of the recess 12 may be removed.
- the inner surface of the recess 12 is oxidized to form a protective layer 13 made of aluminum oxide, and a bonding material 31 such as solder is placed on the bottom surface 12a of the recess 12. ..
- energy such as ultrasonic waves may be applied to the bottom surface 12a of the recess 12 to remove the protective layer 13 from a part of the bottom surface 12a of the recess 12.
- Solder or the like to be placed on the bottom surface 12a of the recess 12 is individually placed with the joining material 31 to remove the protective layer 13, and then the joining material 31 is added to join the joining materials 31 to each other. It doesn't matter.
- the electronic component 2 can be mounted on the third surface of the insulating substrate 21 of the electronic component mounting package 1 to manufacture an electronic device.
- the electronic component 2 mounted on the electronic component mounting package 1 is, for example, a light emitting element such as an LED (Light Emitting Diode) for UV.
- the electronic component 2 is a flip-chip type electronic component 2
- the electronic component is electronic via a connecting member 3 such as a solder bump, a gold bump, or a conductive resin (anisometric conductive resin or the like).
- the electrodes of the component 2 and the wiring layer 22 are electrically and mechanically connected to be mounted on the electronic component mounting package 1.
- the semiconductor element 2 is fixed on the insulating substrate 21 by a bonding member such as a low melting point brazing material or a conductive resin, and then the bonding wire is used.
- the electrodes of the semiconductor element and the wiring layer 22 are electrically connected to each other via a connecting member such as the above, so that the semiconductor element is mounted on the electronic component mounting package 1.
- the electronic component 2 is electrically connected to the wiring layer 22.
- a connecting member such as a bonding wire
- a bonding wire made of aluminum or the like may be used.
- a plurality of electronic components 2 may be mounted on the third surface of the insulating substrate 21.
- a region surrounding the plurality of electronic components 2 in a plan view may be considered as a mounting portion.
- the electronic component 2 is sealed with a sealing material made of resin, glass or the like, or with a lid made of resin, glass, ceramics, metal or the like, if necessary.
- the metal substrate 11 having the recess 12 and the insulating substrate 21 having the mounting surface of the electronic component 2 are provided, and the insulating substrate 21 is provided via the bonding material 31. It is located on the bottom surface 12a of the recess 12, and the bonding material 31 is located inside the insulating substrate 21 in frontal perspective with respect to the opening of the recess 12.
- the joining material 31 is located in the insulating substrate 21 over the entire circumference of the outer edge 31a of the joining material 31 in front perspective with respect to the opening of the recess 12.
- a light emitting element for UV is mounted over the entire circumference of the recess 12, and when the light is emitted, the light emitted is less likely to be irradiated to the bonding material 31 such as a brazing material, and the brazing material having a low reflectance or the like has a low reflectance.
- the light reflected by the bonding material 31 is less likely to be radiated to the outside. As a result, it is possible to obtain the electronic component mounting package 1 capable of emitting good light.
- the outer edge of the bonding layer 23 is located away from the outer edge 21a of the insulating substrate 21 in frontal perspective with respect to the opening of the recess 12.
- the bonding material 31 is less likely to flow out to the outer edge of the insulating substrate 21, and the light of the light emitting element is less likely to be satisfactorily irradiated by the bonding material 31, so that good light can be emitted for mounting electronic components. It can be package 1.
- the outer edge of the bonding layer 23 is located away from the outer edge 21a of the insulating substrate 21 over the entire circumference of the outer edge 31a of the bonding material 31 in front perspective with respect to the opening of the recess 12.
- the bonding material 31 is less likely to flow out to the outer edge of the insulating substrate 21 over the entire circumference, and the light of the light emitting element is less likely to be better irradiated to the bonding material 31 to emit good light.
- It can be a package 1 for mounting electronic components.
- the outer edge of the wiring layer 22 is located inside the outer edge 31a of the joining material 31 in front perspective with respect to the opening of the recess 12.
- the joining material 31 has a first outer edge 31a1 located near the insulating substrate 21, a second outer edge 31a2 located far away from the insulating substrate 21, and a first outer edge. It has a fifth outer edge 31a3 located between the 31a1 and the second outer edge 31a2. In the joining material 31, the fifth outer edge 31a3 is located outside the first outer edge 31a1 and the second outer edge 31a2.
- the fifth outer edge 31a3 may be located outside the outer edge of the wiring layer 22 and the inner end of the protective layer 13.
- the first outer edge 31a1 located near the insulating substrate 21 is located inside the second outer edge 31a2 located far from the insulating substrate 21.
- the inside is a direction from the outer edge of the electronic component mounting package 1 toward the center in the front view.
- the heat of the electronic component 2 mounted on the insulating substrate 21 can be satisfactorily transferred to the metal substrate 11 side via the wiring layer 22, the insulating substrate 21, the bonding layer 23, and the bonding material 31.
- the electronic component mounting package 1 capable of emitting good light for a long period of time.
- the first outer edge 31a1 located near the insulating substrate 21 over the entire circumference may be located inside the second outer edge 31a2 located far from the insulating substrate 21.
- the wiring layer 22 of the electronic device is electrically connected to the wiring conductor of the external device or the connection pad of the module board.
- the heat of the electronic device can be radiated better to the radiator, and the electrons can be used satisfactorily for a long period of time. It can be a device.
- a through hole is provided outside the joint portion between the electronic device and the radiator in a plane perspective, and the electronic device is held by the external device by screwing the inside of the through hole to obtain electrons.
- the wiring layer 22 of the device and the wiring conductor of the external device are electrically connected by a connecting material.
- the electronic device is held on the module board, and the wiring layer 22 of the electronic device and the connection pad of the module board are electrically connected by a connecting material.
- the electronic component mounting package 1 of the second embodiment differs from the electronic component mounting package 1 of the above-described embodiment in that the insulating substrate 21 has an outer edge 21a in the recess 12 in front perspective with respect to the opening of the recess 12. It is a point located outside the bottom surface 12a. Here, the outside is a direction away from the center of the electronic component mounting package 1 in the front view.
- FIG. 7B is an example in which the outer edge 21a of the insulating substrate 21 is located outside the boundary between the bottom surface 12a and the inner surface connected to the bottom surface 12a in the recess 12.
- the thickness of the metal substrate 11 including the bottom surface 12a in the recess 12 is 5 of the thickness of the metal substrate 11 in the portion where the bonding material 31 exists.
- the bottom surface 12a is up to the portion where the percentage is increased.
- the electronic component mounting package 1 in the second embodiment as in the electronic component mounting package 1 of the above-described embodiment, when a light emitting element for UV is mounted as the electronic component 2 and the light is emitted. , The emitted light is less likely to be radiated to the bonding material 31 such as a brazing material, and the light reflected by the bonding material 31 such as a brazing material having a low reflectance is less likely to be radiated to the outside. As a result, it is possible to obtain the electronic component mounting package 1 capable of emitting good light.
- the outer edge 21a of the insulating substrate 21 is located outside the bottom surface 12a of the recess 12 in frontal perspective with respect to the opening of the recess 12.
- the inner end portion of the protective layer 13 is insulated in front perspective with respect to the opening of the recess 12.
- the bonding material 31 is located inside the insulating substrate 21 in frontal perspective with respect to the opening of the recess 12.
- the inner end of the protective layer 13 may be located on the bottom surface 12a of the recess 12, or may be located on the inner surface of the recess 12 near the boundary with the bottom surface 12a of the recess 12. ..
- the inner end of the protective layer 13 When the inner end of the protective layer 13 is located on the inner side surface of the recess 12 near the boundary with the bottom surface 12a of the recess 12, it is bonded to the metal substrate 11 over the entire surface of the bottom surface 12a of the recess 12, so that it is insulated.
- the heat of the electronic component 2 mounted on the substrate 21 can be satisfactorily transferred to the metal substrate 11.
- the outer end of the protective layer 13 may be located on the entire circumference of the inner surface of the recess 12 on the opening side of the recess 12.
- the electronic component mounting package 1 of the second embodiment can be manufactured by using the same manufacturing method as the electronic component mounting package 1 of the above-described embodiment other than the above.
- the electronic component mounting package 1 of the third embodiment differs from the electronic component mounting package 1 of the above-described embodiment in that the insulating substrate 21 is the outer edge of the mounting surface (upper surface in FIGS. 8A and 8B).
- the third outer edge 21a1 is located outside the fourth outer edge 21a2, which is the outer edge of the opposite surface (lower surface in FIGS. 8A and 8B) of the mounting surface.
- the outside is a direction away from the center of the electronic component mounting package 1 in the front view.
- the outer edge 21a of the insulating substrate 21 has a third outer edge 21a1 and a fourth outer edge 21a2.
- the electronic component mounting package 1 in the third embodiment as in the electronic component mounting package 1 of the above-described embodiment, when a light emitting element for UV is mounted as the electronic component 2 and the light is emitted. , The emitted light is less likely to be radiated to the bonding material 31 such as a brazing material, and the light reflected by the bonding material 31 such as a brazing material having a low reflectance is less likely to be radiated to the outside. As a result, it is possible to obtain the electronic component mounting package 1 capable of emitting good light.
- the third outer edge 21a1 which is the outer edge of the mounting surface is located outside the fourth outer edge 21a2 which is the outer edge of the opposite surface of the mounting surface.
- the outer edge 21a of the insulating substrate 21 may have an inclined portion, but as in the examples shown in FIGS. 8A and 8B, the outer edge 21a of the insulating substrate 21 may have a stepped portion. ..
- the insulating substrate 21 is less likely to come into contact with the inner side surface of the recess 12, the third outer edge 21a1 can be located on the outer side, and the emitted light is the third outer edge. It becomes easy to be blocked by 21a1.
- the third outer edge 21a1 can be located on the outer side farther from the bottom surface 12a in the recess 12.
- the third outer edge 21a1 which is the outer edge of the mounting surface, is located outside the fourth outer edge 21a2, which is the outer edge of the opposite surface of the mounting surface, over the entire circumference of the outer edge 21a of the insulating substrate 21.
- the bonding material 31 when the first outer edge 31a1 of the bonding material 31 located near the insulating substrate 21 is located inside the second outer edge 31a2 located far from the insulating substrate 21, the bonding material 31 is recessed 12 It can be easily located in the insulating substrate 21 in the front perspective with respect to the opening of.
- the electronic component 2 is located inside the fourth outer edge 21a2, which is the outer edge of the opposite surface of the mounting surface.
- the electronic component mounting package 1 of the third embodiment can be manufactured by using the same manufacturing method as the electronic component mounting package 1 of the above-described embodiment other than the above.
- the present invention is not limited to the example of the above-described embodiment, and various modifications can be made.
- the insulating substrate 21 may have a rectangular shape having notches or chamfers on the side surfaces or corners in a plan view.
- the recess 12 is formed as a square trapezoidal space having a large opening side on the first surface of the metal substrate 11 in the electronic component mounting package 1 to the third electronic component mounting package 1 of the first embodiment. However, it may be formed as a truncated cone-shaped space having a large opening side on the first surface of the metal substrate 11. Further, it may be formed as a rectangular parallelepiped space on the first surface of the metal substrate 11. The recess 12 is formed on the first surface of the metal substrate 11 so that the opening side is large, as in the electronic component mounting package 1 to the third embodiment of the electronic component mounting package 1 of the first embodiment. Then, the light of the light emitting element mounted on the insulating substrate 21 can be satisfactorily emitted to the outside.
- the package 1 for mounting electronic components in the above-described embodiment has one recess 12 on the first surface of the metal substrate 11 and an insulating substrate 21 in the recess 12, but the first surface of the metal substrate 11 has an insulating substrate 21. It may be an electronic component mounting package 1 in which a plurality of recesses 12 are formed and an insulating substrate 21 is bonded to the bottom surface 12a of each recess 12 via a bonding material 31. In the above case, the electronic component 2 may be mounted on the insulating substrate 21 mounted on the bottom surface 12a of each recess 12.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
Description
本実施形態における電子部品搭載用パッケージ1は、凹部12を有する金属基体11と、電子部品2の搭載面を有する絶縁基板21と、を備えている。絶縁基板21は、接合材31を介して凹部12における底面12aに位置している。接合材31は、凹部12の開口に対する正面透視において、絶縁基板21内に位置している。絶縁基板21は、後述する第3面に位置する配線層22と、後述する第4面に位置する接合層23とを有している。図1A~図2Bにおいて、上方向とは、仮想のz軸の正方向のことをいう。なお、以下の説明における上下の区別は便宜的なものであり、実際に電子部品搭載用パッケージ1等が使用される際の上下を限定するものではない。
次に、第2の実施形態による電子部品搭載用パッケージ1について、図6A~図7Bを参照しつつ説明する。
次に、第3の実施形態による電子部品搭載用パッケージ1について、図8A、図8Bを参照しつつ説明する。
11・・・・金属基体
12・・・・凹部
13・・・・保護層
21・・・・絶縁基板
21a・・・絶縁基板の外縁
21a1・・第3外縁
21a2・・第4外縁
22・・・・配線層
23・・・・接合層
31・・・・接合材
31a・・・接合材の外縁
31a1・・第1外縁
31a2・・第2外縁
2・・・・電子部品
3・・・・接続部材
Claims (5)
- 凹部を有する金属基体と、
電子部品の搭載面を有する絶縁基板と、
を備え、
前記絶縁基板は、接合材を介して前記凹部における底面に位置し、
前記接合材は、前記凹部の開口に対する正面透視において、前記絶縁基板内に位置する、電子部品搭載用パッケージ。 - 前記接合材は、前記絶縁基板の近くに位置する第1外縁が、前記絶縁基板の遠くに位置する第2外縁より内側に位置する、請求項1に記載の電子部品搭載用パッケージ。
- 前記絶縁基板は、前記正面透視において、外縁が前記凹部における底面より外側に位置する、請求項1または請求項2に記載の電子部品搭載用パッケージ。
- 前記絶縁基板は、前記搭載面の外縁である第3外縁が、前記搭載面の反対面の外縁である第4外縁より外側に位置する、請求項1乃至請求項3のいずれかに記載の電子部品搭載用パッケージ。
- 請求項1乃至請求項4のいずれかに記載の電子部品搭載用パッケージと、
該電子部品搭載用パッケージに搭載された電子部品と、を有する、電子装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/795,770 US20230076271A1 (en) | 2020-01-28 | 2021-01-22 | Electronic component mounting package and electronic device |
JP2021573992A JP7259091B2 (ja) | 2020-01-28 | 2021-01-22 | 電子部品搭載用パッケージおよび電子装置 |
CN202180010765.1A CN114981957A (zh) | 2020-01-28 | 2021-01-22 | 电子部件搭载用封装体以及电子装置 |
KR1020227025579A KR20220119695A (ko) | 2020-01-28 | 2021-01-22 | 전자 부품 탑재용 패키지 및 전자 장치 |
EP21747526.8A EP4099375A4 (en) | 2020-01-28 | 2021-01-22 | MOUNTING HOUSING FOR ELECTRONIC COMPONENTS AND ELECTRONIC DEVICE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2020-011715 | 2020-01-28 | ||
JP2020011715 | 2020-01-28 |
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WO2021153450A1 true WO2021153450A1 (ja) | 2021-08-05 |
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PCT/JP2021/002225 WO2021153450A1 (ja) | 2020-01-28 | 2021-01-22 | 電子部品搭載用パッケージおよび電子装置 |
Country Status (6)
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US (1) | US20230076271A1 (ja) |
EP (1) | EP4099375A4 (ja) |
JP (1) | JP7259091B2 (ja) |
KR (1) | KR20220119695A (ja) |
CN (1) | CN114981957A (ja) |
WO (1) | WO2021153450A1 (ja) |
Citations (4)
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JP2005035864A (ja) * | 2002-10-15 | 2005-02-10 | Kenichiro Miyahara | 発光素子搭載用基板 |
JP2006173392A (ja) * | 2004-12-16 | 2006-06-29 | Koha Co Ltd | 発光装置 |
JP2008060167A (ja) * | 2006-08-29 | 2008-03-13 | Nichia Chem Ind Ltd | 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置 |
JP2013122189A (ja) | 2011-12-11 | 2013-06-20 | Oga:Kk | 水門着脱式水力発電システム |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH09121018A (ja) * | 1995-10-26 | 1997-05-06 | Hitachi Ltd | 半導体装置 |
KR101463075B1 (ko) * | 2008-02-04 | 2014-11-20 | 페어차일드코리아반도체 주식회사 | 히트 싱크 패키지 |
JP5588956B2 (ja) * | 2011-11-30 | 2014-09-10 | 株式会社 日立パワーデバイス | パワー半導体装置 |
JP6019706B2 (ja) * | 2012-04-24 | 2016-11-02 | ダイキン工業株式会社 | パワーモジュール |
JP6138500B2 (ja) * | 2013-01-30 | 2017-05-31 | 株式会社 日立パワーデバイス | パワー半導体装置 |
JP2017199829A (ja) * | 2016-04-28 | 2017-11-02 | 日産自動車株式会社 | パワーモジュール構造 |
-
2021
- 2021-01-22 KR KR1020227025579A patent/KR20220119695A/ko not_active Application Discontinuation
- 2021-01-22 US US17/795,770 patent/US20230076271A1/en active Pending
- 2021-01-22 EP EP21747526.8A patent/EP4099375A4/en active Pending
- 2021-01-22 JP JP2021573992A patent/JP7259091B2/ja active Active
- 2021-01-22 CN CN202180010765.1A patent/CN114981957A/zh active Pending
- 2021-01-22 WO PCT/JP2021/002225 patent/WO2021153450A1/ja unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005035864A (ja) * | 2002-10-15 | 2005-02-10 | Kenichiro Miyahara | 発光素子搭載用基板 |
JP2006173392A (ja) * | 2004-12-16 | 2006-06-29 | Koha Co Ltd | 発光装置 |
JP2008060167A (ja) * | 2006-08-29 | 2008-03-13 | Nichia Chem Ind Ltd | 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置 |
JP2013122189A (ja) | 2011-12-11 | 2013-06-20 | Oga:Kk | 水門着脱式水力発電システム |
Non-Patent Citations (1)
Title |
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See also references of EP4099375A4 |
Also Published As
Publication number | Publication date |
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US20230076271A1 (en) | 2023-03-09 |
CN114981957A (zh) | 2022-08-30 |
JPWO2021153450A1 (ja) | 2021-08-05 |
EP4099375A1 (en) | 2022-12-07 |
JP7259091B2 (ja) | 2023-04-17 |
EP4099375A4 (en) | 2024-02-21 |
KR20220119695A (ko) | 2022-08-30 |
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