WO2016194337A1 - Organic photoelectric conversion element, optical area sensor, imaging device, and imaging apparatus - Google Patents
Organic photoelectric conversion element, optical area sensor, imaging device, and imaging apparatus Download PDFInfo
- Publication number
- WO2016194337A1 WO2016194337A1 PCT/JP2016/002520 JP2016002520W WO2016194337A1 WO 2016194337 A1 WO2016194337 A1 WO 2016194337A1 JP 2016002520 W JP2016002520 W JP 2016002520W WO 2016194337 A1 WO2016194337 A1 WO 2016194337A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- organic compound
- organic
- conversion element
- compound layer
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 136
- 238000003384 imaging method Methods 0.000 title claims description 57
- 230000003287 optical effect Effects 0.000 title claims description 22
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 174
- 150000001875 compounds Chemical class 0.000 claims description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- -1 acridinylidene Chemical class 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 103
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 239000000203 mixture Substances 0.000 description 20
- 229910003472 fullerene Inorganic materials 0.000 description 14
- 125000003118 aryl group Chemical group 0.000 description 13
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical class CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 13
- 239000002904 solvent Substances 0.000 description 13
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000003756 stirring Methods 0.000 description 12
- 238000003786 synthesis reaction Methods 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 238000011084 recovery Methods 0.000 description 9
- 125000001424 substituent group Chemical group 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000003153 chemical reaction reagent Substances 0.000 description 8
- 125000005843 halogen group Chemical group 0.000 description 8
- 125000001792 phenanthrenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000002194 synthesizing effect Effects 0.000 description 7
- SFHYNDMGZXWXBU-LIMNOBDPSA-N 6-amino-2-[[(e)-(3-formylphenyl)methylideneamino]carbamoylamino]-1,3-dioxobenzo[de]isoquinoline-5,8-disulfonic acid Chemical compound O=C1C(C2=3)=CC(S(O)(=O)=O)=CC=3C(N)=C(S(O)(=O)=O)C=C2C(=O)N1NC(=O)N\N=C\C1=CC=CC(C=O)=C1 SFHYNDMGZXWXBU-LIMNOBDPSA-N 0.000 description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000001840 matrix-assisted laser desorption--ionisation time-of-flight mass spectrometry Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 125000001624 naphthyl group Chemical group 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003480 eluent Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- CYPYTURSJDMMMP-WVCUSYJESA-N (1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].[Pd].C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 CYPYTURSJDMMMP-WVCUSYJESA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 239000012295 chemical reaction liquid Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 125000001725 pyrenyl group Chemical group 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 238000010898 silica gel chromatography Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- GKASDNZWUGIAMG-UHFFFAOYSA-N triethyl orthoformate Chemical compound CCOC(OCC)OCC GKASDNZWUGIAMG-UHFFFAOYSA-N 0.000 description 4
- BWHDROKFUHTORW-UHFFFAOYSA-N tritert-butylphosphane Chemical compound CC(C)(C)P(C(C)(C)C)C(C)(C)C BWHDROKFUHTORW-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000002484 cyclic voltammetry Methods 0.000 description 3
- 125000003914 fluoranthenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC=C4C1=C23)* 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 229910021397 glassy carbon Inorganic materials 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 125000002911 monocyclic heterocycle group Chemical group 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000104 sodium hydride Inorganic materials 0.000 description 3
- 239000012312 sodium hydride Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 3
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 2
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 125000002676 chrysenyl group Chemical group C1(=CC=CC=2C3=CC=C4C=CC=CC4=C3C=CC12)* 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004988 dibenzothienyl group Chemical group C1(=CC=CC=2SC3=C(C21)C=CC=C3)* 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthene Chemical class C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical class [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 2
- 150000002790 naphthalenes Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 2
- 125000002080 perylenyl group Chemical class C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 125000004309 pyranyl group Chemical class O1C(C=CC=C1)* 0.000 description 2
- 150000003220 pyrenes Chemical class 0.000 description 2
- 150000003233 pyrroles Chemical class 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000003518 tetracenes Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 125000005259 triarylamine group Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- UGOMMVLRQDMAQQ-UHFFFAOYSA-N xphos Chemical group CC(C)C1=CC(C(C)C)=CC(C(C)C)=C1C1=CC=CC=C1P(C1CCCCC1)C1CCCCC1 UGOMMVLRQDMAQQ-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical class [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- AGIJRRREJXSQJR-UHFFFAOYSA-N 2h-thiazine Chemical compound N1SC=CC=C1 AGIJRRREJXSQJR-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ATLMFJTZZPOKLC-UHFFFAOYSA-N C70 fullerene Chemical compound C12=C(C3=C4C5=C67)C8=C9C%10=C%11C%12=C%13C(C%14=C%15C%16=%17)=C%18C%19=C%20C%21=C%22C%23=C%24C%21=C%21C(C=%25%26)=C%20C%18=C%12C%26=C%10C8=C4C=%25C%21=C5C%24=C6C(C4=C56)=C%23C5=C5C%22=C%19C%14=C5C=%17C6=C5C6=C4C7=C3C1=C6C1=C5C%16=C3C%15=C%13C%11=C4C9=C2C1=C34 ATLMFJTZZPOKLC-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LWLSVNFEVKJDBZ-UHFFFAOYSA-N N-[4-(trifluoromethoxy)phenyl]-4-[[3-[5-(trifluoromethyl)pyridin-2-yl]oxyphenyl]methyl]piperidine-1-carboxamide Chemical compound FC(OC1=CC=C(C=C1)NC(=O)N1CCC(CC1)CC1=CC(=CC=C1)OC1=NC=C(C=C1)C(F)(F)F)(F)F LWLSVNFEVKJDBZ-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- FQRWAZOLUJHNDT-UHFFFAOYSA-N c12c3c4c5c6c7c8c9c%10c%11c%12c%13c%14c%15c%16c%17c(c1c1c4c7c%10c%13c%161)c1c2c2c4c7c%10c%13c%16c%18c%19c%20c%21c%22c%23c%24c%25c%26c%27c%28c%29c(c7c7c%13c%19c%22c%25c%287)c4c1c1c%17c%15c(c%27c%291)c1c%14c%12c(c%24c%261)c1c%11c9c(c%21c%231)c1c8c6c(c%18c%201)c1c5c3c2c%10c%161 Chemical compound c12c3c4c5c6c7c8c9c%10c%11c%12c%13c%14c%15c%16c%17c(c1c1c4c7c%10c%13c%161)c1c2c2c4c7c%10c%13c%16c%18c%19c%20c%21c%22c%23c%24c%25c%26c%27c%28c%29c(c7c7c%13c%19c%22c%25c%287)c4c1c1c%17c%15c(c%27c%291)c1c%14c%12c(c%24c%261)c1c%11c9c(c%21c%231)c1c8c6c(c%18c%201)c1c5c3c2c%10c%161 FQRWAZOLUJHNDT-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical group C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 1
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 description 1
- 125000005509 dibenzothiophenyl group Chemical group 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 150000002219 fluoranthenes Chemical class 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- IUTZKZLVPUPHDA-UHFFFAOYSA-N n-(4-chlorophenyl)-2h-triazol-4-amine Chemical compound C1=CC(Cl)=CC=C1NC1=NNN=C1 IUTZKZLVPUPHDA-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920000548 poly(silane) polymer Chemical class 0.000 description 1
- 229920000768 polyamine Chemical class 0.000 description 1
- 229920000412 polyarylene Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 125000005412 pyrazyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- VELSFHQDWXAPNK-UHFFFAOYSA-N tetracontacyclo[25.6.5.516,28.44,32.35,11.321,34.28,10.212,15.222,35.229,31.113,20.124,38.02,6.014,19.017,25.018,23.030,37.033,36.547,54.446,53.448,58.126,51.150,52.03,45.07,42.09,61.039,40.041,43.044,63.049,76.055,78.056,62.057,68.059,64.060,67.065,69.066,71.070,73.072,75.074,77]octaheptaconta-1,3(45),4(48),5(61),6,8,10,12,14,16,18,20,22,24(39),25,27(38),28,30,32,34(42),35(40),36,41(43),44(63),46,49(76),50(77),51,53,55(78),56(62),57,59,64,66,68,70(73),71,74-nonatriacontaene Chemical compound c12c3c4c5c6c1c1c7c8c2c2c3c3c9c4c4c5c5c%10c%11c%12c%13c%14c%15c%12c%12c%16c%17c%18c%19c%20c%21c%17c%17c%22c%21c%21c%23c%20c%20c%19c%19c%24c%18c%16c%15c%15c%24c%16c(c7c%15c%14c1c6c5%13)c8c1c2c2c3c3c(c%21c5c%22c(c%11c%12%17)c%10c4c5c93)c%23c2c%20c1c%19%16 VELSFHQDWXAPNK-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to an organic photoelectric conversion element, an optical area sensor, an imaging device, and an imaging apparatus.
- Two-dimensional light-receiving devices are widely used as an imaging device.
- This type of imaging device includes pixels defined by photoelectric conversion portions two-dimensionally arranged in a semiconductor, and singles produced in the pixels by photoelectric conversion are transferred as charges and read out by a CCD circuit or a CMOS circuit.
- a photodiode including a photoelectric conversion portion containing an organic compound has been known.
- PTL 1 discloses a highly sensitive, fast-response organic photoelectric conversion element with a high S/N ratio of light current to dark current.
- the organic photoelectric conversion element includes a hole blocking layer containing a fullerene derivative and an organic compound having an ionization potential of 5.5 eV or more.
- the holes generated from the photoelectric conversion layer do not efficiently reach a hole-collecting electrode. Thus, this organic photoelectric conversion element has room for improvement.
- the present invention provides an organic photoelectric conversion element in which holes generated by photoelectric conversion can efficiently move to the cathode.
- an organic photoelectric conversion element including an anode, a cathode, and a photoelectric conversion portion.
- the organic photoelectric conversion portion includes a first organic compound layer.
- the organic photoelectric conversion element also includes a second organic compound layer between the cathode and the photoelectric conversion portion.
- the second organic compound layer contains an organic compound having an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more.
- Fig. 1 is a schematic sectional view of an organic photoelectric conversion element according to an embodiment of the present invention.
- Fig. 2 is a diagram illustrating the energy between the electrodes of an organic photoelectric conversion element according to an embodiment of the present invention.
- the present invention provides an organic photoelectric conversion element including an anode, a cathode, and a photoelectric conversion portion between the anode and the cathode.
- the photoelectric conversion portion includes a first organic compound layer, and a second organic compound layer is disposed between the cathode and the photoelectric conversion portion.
- the organic compound contained in the second organic compound layer has an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more.
- this organic compound layer has an ionization potential of 5.1 eV or less, holes can be efficiently transferred from the photoelectric conversion portion to the cathode. Also, since the organic compound of the second organic compound layer has a band gap of 2.5 eV or more, electrons are prevented from flowing into the photoelectric conversion portion from the cathode.
- Fig. 1 is a schematic sectional view of an organic photoelectric conversion element according to an embodiment of the present invention.
- the organic photoelectric conversion element includes a first organic compound layer 1 between a cathode 4 and an anode 5.
- the first organic compound layer 1 acts as a photoelectric conversion portion that converts light into charges. Since the first organic compound layer is intended to convert light into charges, it may be called a photoelectric conversion layer.
- the organic photoelectric conversion element further includes a second organic compound layer 2 between the first organic compound layer and the cathode, and a third organic compound layer 3 between the first organic compound layer and the anode.
- the anode 5 is connected to a readout circuit 6.
- the readout circuit 6 reads information according to the charge generated from the organic conversion portion and transmits the information to, for example, a signal processing section (not shown) disposed at the downstream side.
- the readout circuit 6 may be connected to the cathode.
- the organic photoelectric conversion element also includes an inorganic protective layer 7 over the cathode.
- the inorganic protective layer is made of, for example, silicon oxide, silicon nitride, aluminum oxide, or the like.
- the protective layer may be formed by vapor deposition, sputtering, ALD (atomic layer deposition), or the like.
- a color filter 8 is disposed on the inorganic protective layer.
- the color filter may transmit red light of visible light. If a plurality of organic photoelectric conversion elements are arranged, a plurality of color filters may be provided, one for each organic photoelectric conversion element. Alternatively, a single color filter may be shared by the plurality of organic photoelectric conversion elements.
- the color filters may be arranged for example, in a Bayer array.
- a microlens 9 is disposed on the color filter.
- the microlens focuses incoming light on the organic photoelectric conversion element. If a plurality of organic photoelectric conversion elements are arranged, a plurality of microlenses may be provided, one for each organic photoelectric conversion element. Alternatively, a single microlens may be shared by the plurality of organic photoelectric conversion elements.
- the voltage is desirably in the range of 0.5 V to 15 V.
- Fig. 2 is an energy diagram of an organic photoelectric conversion element according to an embodiment of the present invention.
- Fig. 2 shows only the cathode 4, the first organic compound layer 1, and the second organic compound layer 2, omitting other members or components.
- the line denoted by reference numeral 4 represents the energy level of the work function of the cathode.
- the length in the vertical direction represents the band gap of the organic compound contained in the corresponding organic compound layer; the position of the lower side of the rectangular shape represents the ionization potential of the organic compound; and the position of the upper side of the rectangular shape represents the electron affinity.
- any of the organic compound layers contains a plurality of organic compounds, the energy of the organic compound contained with the highest proportion is shown.
- the organic compound of the second organic compound layer has a lower ionization potential than the organic compound of the first organic compound layer. In this condition, holes can efficiently move from the first organic compound layer to the cathode.
- the ionization potential of the organic compound in the second organic compound layer is desirably 0.5 eV or more lower than that in the first organic compound layer. Also, the ionization potential of the organic compound in the second organic compound layer is desirably higher than the work function of the cathode.
- the ionization potential of the organic compound in the second organic compound layer be higher than the work function of the cathode and lower than the ionization potential of the organic compound in the first organic compound layer.
- the organic compound in the second organic compound layer has a lower electron affinity than the organic compound in the first organic compound layer. In this condition, electrons can be prevented from flowing into the first organic compound layer from the cathode. More specifically, the electron affinity of the organic compound in the second organic compound layer is desirably 0.5 eV or more lower than that in the first organic compound layer. Also, the electron affinity of the organic compound in the second organic compound layer is desirably 1.0 eV or more lower than the work function of the cathode.
- the organic compound in the second organic compound layer is resistant to water. This is because the second organic compound layer is disposed closer to the outside than the first organic compound layer, accordingly, more liable to be affected by moisture entering from the outside. More specifically, it is desirable that the organic compound in the second organic compound layer be less soluble in water or less reactive to water.
- the organic compound in the second organic compound layer is more resistant to water than the organic compound contained in the hole blocking layer disclosed in PTL 1.
- the water resistance of organic compounds can be estimated in accordance with the following procedure.
- An organic compound layer is formed to a thickness of 50 nm or more on a silicon substrate by vacuum deposition using resistance heating at 5 ⁇ 10 -3 Pa in a vacuum chamber of a vapor deposition apparatus. Water is dropped onto the organic compound layer and is allowed to stand for 10 minutes.
- the thickness of the organic compound layer is measured 10 minutes after water has been dropped.
- the water resistance thus can be estimated by comparing the thicknesses before and after dropping water.
- the rate of decrease in thickness at this time can be measured with, for example, an instrument P-16 manufactured by KLA-Tencor. This is calculated using the average of measurements at two points at both ends of a droplet trace.
- the rate of decrease in thickness of the water-resistant organic compound layer is desirably in the range of 0% to 50%, more desirably in the range of 0% to 30%, such as in the range of 0% to 10%.
- the water resistance may be estimated by measuring the contact angle of the water droplet with the organic compound layer, instead of measuring the rate of decrease in thickness.
- the contact angle can be measured by a known method.
- the contact angle may be measured with, for example, a contact angle meter DropMaster 700 and an analysis software program FAMAS (each manufactured by Kyowa Interface Science).
- the contact angle with the water-resistant organic compound layer is desirably in the range of 50° to 120°, such as in the range of 70° to 100°.
- a high water resistance of an organic compound layer suggests that the organic compound in the organic compound layer is resistant to water.
- Water-resistant organic compound layers are unlikely to be altered in surface profile of the organic compound layer even if water is dropped thereon. Therefore the contact angle of the water droplet is large or the rate of decrease in thickness is low.
- the second organic compound layer contains at least one selected from the group consisting of imidazolidene derivatives, benzoimidazolidene derivatives, and acridinylidene derivatives.
- the second organic compound layer may be in contact with the cathode.
- the ionization potential can be measured in accordance with the following procedure.
- An organic compound layer is formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 ⁇ 10 -3 Pa in a vacuum chamber. Desirably, the layer is deposited to a thickness in the range of about 150 nm to 200 nm. Then, the ionization potential of the resulting layer is measured with an atmospheric photoelectron spectrometer, for example, AC-2 manufactured by Riken Keiki.
- an atmospheric photoelectron spectrometer for example, AC-2 manufactured by Riken Keiki.
- the band gap can be measured in accordance with the following procedure.
- An organic compound layer is formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 ⁇ 10 -3 Pa in a vacuum chamber. Desirably, the layer is deposited to a thickness in the range of about 150 nm to 200 nm.
- an absorption spectrum is measured with an ultraviolet-visible spectrophotometer or the like. The band gap is determined from the absorption edge of the absorption spectrum.
- the ultraviolet-visible spectrophotometer may be, for example, V-560 manufactured by JASCO Corporation.
- the first organic compound layer of the organic photoelectric conversion element is intended to receive light and generate charges according to the amount of the light.
- the first organic compound layer may be called a photoelectric conversion layer because of the function thereof.
- the first organic compound layer may contain a plurality of organic compounds.
- the first organic compound layer contains a plurality of organic compounds
- a mixture of the plurality of organic compounds may form a single layer, or the plurality of organic compounds may form a multilayer composition including a plurality of layers.
- the plurality of organic compounds form a multilayer composite, it is desirable to form the layers of the composite in the direction from the anode to the cathode.
- the first organic compound layer contains a p-type organic semiconductor or an n-type organic semiconductor. More advantageously, the first organic compound layer has, at least in part, a bulk hetero layer (mixed layer) containing a mixture of a p-type organic compound and an n-type organic compound.
- the bulk hetero layer of the first organic compound layer can increase the photoelectric conversion efficiency (sensitivity) of the photoelectric conversion element.
- the bulk hetero layer contains organic compounds with an optimum proportion, the mobilities of electrons and holes in the first organic compound layer are increased, and accordingly the optical response speed of the organic photoelectric conversion element can be increased.
- the first organic compound layer contains fullerene or a fullerene derivative as the n-type organic semiconductor.
- a chain of molecules of the fullerene or fullerene derivative in the first organic compound layer defines a path of electrons and thus increases electron transportability, consequently increasing the optical response speed of the organic photoelectric conversion element.
- the fullerene or fullerene derivative content is desirably in the range of 40% by volume to 85% by volume relative to the total volume of the materials of the photoelectric conversion layer or the first organic compound layer.
- fullerenes or fullerene derivatives include Fullerene C60, Fullerene C70, Fullerene C76, Fullerene C78, Fullerene C80, Fullerene C82, Fullerene C84, Fullerene C90, Fullerene C96, Fullerene C240, Fullerene 540, mixed fullerenes, and fullerene nanotubes.
- the fullerene derivative is a fullerene having a substituent.
- the substituent may be an alkyl group, an aryl group, a heterocyclic group, or the like.
- the p-type organic semiconductor that may be contained in the first organic compound layer can act as an organic semiconductor donor, and is typically a hole-transporting, electron-donating organic compound. More specifically, the p-type organic semiconductor is one of the two organic compounds, having a lower ionization potential than the other.
- Examples of the p-type organic semiconductor that can be used in the first organic compound layer include triarylamine compounds, pyran compounds, quinacridone compounds, benzidine compounds, pyrazoline compounds, styrylamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, cyanine compounds, merocyanine compounds, oxonol compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyarylene compounds, condensed aromatic hydrocarbons (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives), and metal complexes having nitrogen-containing heterocyclic compounds as ligands.
- triarylamine compounds pyran compounds, quinacridone compounds, pyrrole compounds, phthalo
- Fluoranthene derivatives are compounds having a fluoranthene skeleton in the chemical structure thereof.
- naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, and perylene derivatives are each a compound having the skeleton of the corresponding chemical compound in the chemical structure thereof.
- the first organic compound layer is not luminescent. More specifically, “not luminescent” implies that the layer has a luminescent quantum efficiency of 1% or less, desirably 0.5% or less, such as 0.1% or less, in the visible wavelength region (400 nm to 730 nm). If the luminescent quantum efficiency of the photoelectric conversion portion exceeds 1%, sensing performance or imaging performance is adversely affected when the organic photoelectric conversion element is applied to a censor or an imaging device.
- the organic photoelectric conversion element according to an embodiment of the present invention may further include a third organic compound layer between the anode and the first organic compound layer.
- the third organic compound layer is intended to prevent holes from entering the first organic compound layer from the anode and desirably has a high ionization potential.
- the organic compound layer according to an embodiment may include a substrate.
- the substrate may be a silicon substrate, a glass substrate, a flexible substrate, or the like.
- the cathode of the organic photoelectric conversion element is an electrode that collects holes of the charges generated in the photoelectric conversion portion.
- the cathode may be made of an electrically conductive transparent material. In a structure where the cathode is disposed near the side of the organic photoelectric conversion element through which light enters, it is desirable that the cathode be optically transparent.
- the cathode may be called a hole-collecting electrode or a negative electrode.
- cathode material examples include metals, metal oxides, metal nitrides, metal borides, organic electroconductive compounds, and mixture thereof. More specifically, cathode materials include elemental metals, such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, aluminum, titanium, and manganese; mixtures or alloys of these elemental metals; antimony- or fluorine-doped tin oxide (ATO, FTO); electroconductive metal oxides, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); inorganic electroconductive compounds, such as copper iodide and copper sulfide; organic electroconductive materials, such as polyaniline, polythiophene, and polypyrrole; and composites including an organic electroconductive material layer and an ITO or titanium nitride layer.
- elemental metals such as gold, platinum, silver, copper, nickel, palladium,
- the anode of the organic photoelectric conversion element is an electrode that collects electrons of the charges generated in the photoelectric conversion portion.
- the anode In a structure where the anode is disposed on the side of the organic photoelectric conversion element through which light enters, it is desirable that the anode be optically transparent.
- the anode may be called an electron-collecting electrode or a positive electrode.
- cathode material examples include metals, metal oxides, metal nitrides, metal borides, organic electroconductive compounds, and mixture thereof. More specifically, cathode materials include elemental metals, such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, aluminum, titanium, and manganese; mixtures or alloys of these elemental metals; antimony- or fluorine-doped tin oxide (ATO, FTO); electroconductive metal oxides, such as tin oxide, zinc oxide, indium oxide, Al-doped zinc oxide (AZO), indium tin oxide (ITO), indium zinc oxide (IZO), and TiO 2 ; inorganic electroconductive compounds, such as copper iodide and copper sulfide; organic electroconductive materials, such as polyaniline, polythiophene, and polypyrrole; and composites including an organic electroconductive material layer and an ITO or titanium nitride layer.
- elemental metals
- One of the anode and the cathode that is connected to the readout circuit may be called the pixel electrode.
- the anode and the cathode may be called the pixel electrode and the opposing electrode, respectively.
- the ITO electrode can be formed by an electron beam method, sputtering, resistance heating vapor deposition, a chemical reaction method (for example, sol-gel method), coating with an indium tin oxide dispersion, and so forth.
- the resulting ITO electrode may be subjected to UV-ozone treatment, plasma treatment, or the like.
- the TiN electrode can be formed by reactive sputtering or any other method, and the resulting TiN electrode may be subjected to annealing, UV-ozone treatment, plasma treatment, or the like.
- the organic compound layer of the photoelectric conversion element according to an embodiment of the present invention may contain an organic compound represented by any one of general formulas (1) to (6):
- R 1 to R 4 each represent a group selected from the groups consisting of substituted or unsubstituted phenyl groups, substituted or unsubstituted benzyl groups, substituted or unsubstituted biphenyl groups, substituted or unsubstituted naphthyl groups, substituted or unsubstituted phenanthrenyl groups, substituted or unsubstituted fluorenyl groups, substituted or unsubstituted triphenylenyl groups, substituted or unsubstituted dibenzofuranyl groups, and substituted or unsubstituted dibenzothiophenyl groups.
- R 5 to R 12 each represent a hydrogen atom or a group selected from the group consisting of alkyl groups having a carbon number in the range of 1 to 4 and substituted or unsubstituted aryl groups.
- the aryl group may have an alkyl group having a carbon number in the range of 1 to 4 as a substituent.
- R 1 to R 4 each represent a group selected from the groups consisting of substituted or unsubstituted phenyl groups, substituted or unsubstituted biphenyl groups, substituted or unsubstituted naphthyl groups, substituted or unsubstituted phenanthrene groups, substituted or unsubstituted fluorenyl groups, substituted or unsubstituted triphenylene groups, substituted or unsubstituted dibenzofuran groups, and substituted or unsubstituted dibenzothiophene groups.
- X 1 and X 2 each represent an aryl group.
- the aryl group may have a halogen atom or an alkyl group.
- R 1 to R 16 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups, and aryl groups.
- R 1 to R 28 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups having a carbon number in the range of 1 to 8, and substituted or unsubstituted aryl groups.
- Ar 1 to Ar 4 each represent a substituted or unsubstituted condensed ring.
- R 1 to R 8 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups having a carbon number in the range of 1 to 8, and substituted or unsubstituted aryl groups.
- Ar 1 to Ar 4 each represent a substituted or unsubstituted heteromonocyclic group.
- R 1 to R 8 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups having a carbon number in the range of 1 to 8, and substituted or unsubstituted aryl groups.
- the halogen atoms in general formulas (1) to (6) include fluorine, chlorine, bromine, and iodine. Fluorine is advantageous.
- the alkyl groups in the above general formulas have a carbon number in the range of 1 to 8.
- Examples of the alkyl groups having a carbon number in the range of 1 to 8 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, and n-octyl.
- aryl groups examples include phenyl, naphthyl, phenanthrenyl, chrysenyl, pyrenyl, fluorenyl, and fluoranthenyl. Phenyl is particularly advantageous.
- condensed rings examples include naphthyl, indenyl, phenanthrenyl, anthracenyl, pyrenyl, fluorenyl, quinolinyl, isoquinolinyl, azaphenanthrenyl, phenanthronyl, benzothienyl, dibenzothienyl, benzofuranyl, and dibenzofuranyl.
- naphthyl, indenyl, phenanthrenyl, anthracenyl, pyrenyl, and fluorenyl are hydrocarbons consisting entirely of hydrogen and carbon.
- quinolinyl, isoquinolinyl, azaphenanthrenyl, phenanthronyl, benzothienyl, dibenzothienyl, benzofuranyl, and dibenzofuranyl are condensed rings each containing a heteroatom.
- the condensed rings each consist entirely of hydrogen and carbon.
- Each heteromonocyclic group may be a 6-membered aromatic ring including carbon and nitrogen atoms or a 5-membered ring including a carbon atom and any of nitrogen, sulfur, and oxygen atoms. More specifically, examples of the heteromonocyclic groups include pyridyl, pyrazyl, pyrimidyl, pyrididazoyl, triazyl, pyrrole, furanyl, thienyl, imidazole, pyrazole, oxazole, thiazole, imidazoline, and thiazine.
- the substituent is selected from the group consisting of halogen atoms, alkyl groups, and aryl groups.
- the halogen atom is desirably fluorine.
- the alkyl group desirably has a carbon number in the range of 1 to 8.
- the aryl group is desirably phenyl, naphthyl, phenanthrenyl, chrysenyl, pyrenyl, fluorenyl, and fluoranthenyl, and more desirably phenyl.
- a process for synthesizing an organic compound of general formula (1) is disclosed by David M. Lemal in "Journal of American Chemical Society, 1964, 86 (12), pp 2518-2519".
- a variety of organic compounds represented by general formula (1) can be synthesized by appropriately replacing the reagent used in the disclosed process.
- a process for synthesizing an organic compound of general formula (2) is disclosed by H. W. Wanzlick in "Organic Syntheses, Coll. Vol. 5, p. 115 (1973) and Vol. 47, p. 14 (1967)".
- a variety of organic compounds represented by general formula (2) can be synthesized by appropriately replacing the reagents used in the disclosed process.
- An organic compound of general formula (3) may be synthesized by, for example, the following process.
- a variety of organic compounds represented by general formula (3) can be synthesized by appropriately replacing the reagents corresponding to R 1 to R 4 , X 1 and X 2 .
- Exemplified Compound A-1 of general formula (3) was synthesized by the following scheme.
- An organic compound of general formula (4) may be synthesized by, for example, the following scheme.
- CV measurement was performed in 0.1 M solution of tetrabutylammonium perchlorate in N,N-dimethylformamide with a Ag/Ag + reference electrode, a Pt counter electrode, and a glassy carbon working electrode.
- the potential scan rate was 0.5 V/s.
- Oxidation potential was -0.85 V.
- An organic compound of general formula (5) may be synthesized by, for example, the following process.
- a variety of organic compounds represented by general formula (5) can be synthesized by appropriately replacing the reagents corresponding to R 1 and R 2 .
- CV measurement was performed in 0.1 M solution of tetrabutylammonium perchlorate in N,N-dimethylformamide with a Ag/Ag + reference electrode, a Pt counter electrode, and a glassy carbon working electrode.
- the potential scan rate was 0.5 V/s.
- Oxidation potential was -0.98 V.
- CV measurement was performed in 0.1 M solution of tetrabutylammonium perchlorate in N,N-dimethylformamide with a Ag/Ag + reference electrode, a Pt counter electrode, and a glassy carbon working electrode.
- the potential scan rate was 0.5 V/s.
- Oxidation potential was -0.74V.
- an organic photoelectric conversion element for light having a different color By replacing the organic compound used in the first organic compound layer, another organic photoelectric conversion element for light having a different color can be produced.
- An organic photoelectric conversion element for light having a different color implies that the element converts light in a different wavelength range from the light to be photoelectrically converted by other photoelectric conversion elements.
- the organic photoelectric conversion element of an embodiment of the present invention may be used in an optical area sensor.
- the optical area sensor includes a plurality of organic photoelectric conversion elements arranged in a two-dimensional array defined by rows and columns.
- the organic photoelectric conversion elements each generate charges and independently output the charges, and thus the optical area sensor provides information representing the distribution of light intensity in a specific light-receiving area.
- Each of the plurality of organic photoelectric conversion elements of the optical area sensor may be provided with an additional optical photoelectric conversion element capable of converting light having a different color into electric energy.
- the additional organic photoelectric conversion element is disposed on the other organic photoelectric conversion element.
- the additional organic photoelectric conversion element photoelectrically converts light having a wavelength different from the light to be converted by the other organic photoelectric conversion element.
- the organic photoelectric conversion element of an embodiment of the present invention may be used in an imaging device.
- the imaging device includes a plurality of pixels and a signal processing section.
- the plurality of pixels are arranged in a matrix manner including a plurality of rows and a plurality of columns.
- Each pixel in this structure outputs a signal to provide an image signal.
- each pixel includes at least one organic photoelectric conversion element.
- the pixel may include a readout circuit connected to the organic photoelectric conversion element.
- the readout circuit includes a transistor that outputs, for example, signals according to the charge generated in the organic photoelectric conversion element.
- the pixel may further include an additional organic photoelectric conversion element capable of photoelectrically converting light having a different color from the light to be converted by the other organic photoelectric conversion element.
- the additional organic photoelectric conversion element is disposed on the other organic photoelectric conversion element.
- the additional organic photoelectric conversion element photoelectrically converts light having a wavelength different from the light to be converted by the other organic photoelectric conversion element.
- the pixel may include a plurality of organic photoelectric conversion elements. Such a structure enables phase difference auto-focusing on an imaging surface. Two or more of the plurality of pixels may share a readout circuit.
- the imaging device may include a wavelength selecting section.
- the wavelength selecting section may be a color filter.
- the color filter is disposed near the side through which light enters.
- a specific color refers to light in a range of specific wavelengths.
- a plurality of color filters may be provided, one for each pixel, or a single color filter may be shared by the plurality of pixels.
- the wavelength selecting section may be a prism that separates out light having a specific wavelength.
- the imaging device may include a microlens.
- the microlens is disposed near the side through which light enters and is adapted to collect incoming light to a photoelectric conversion portion.
- a plurality of microlenses may be provided, one for each pixel, or a single microlens may be shared by the plurality of pixels.
- an optical filter may be disposed near the side of the imaging device through which light enters.
- the optical filter may be a low-pass filter, a UV-cut filter capable of removing light having wavelengths lower than or equal to the wavelengths of ultraviolet radiation, or an IR-cut filter capable of removing infrared radiation. Since the optical filter reduces noise, the imaging device can form high-quality images.
- the organic photoelectric conversion element of an embodiment of the present invention may be used in an imaging apparatus.
- An imaging apparatus includes an imaging optical system having a plurality of lenses, and an imaging device capable of receiving light that has passed through the imaging optical system.
- the imaging apparatus includes a joint section that can be connected to an imaging optical system, and an imaging device.
- the imaging apparatus may be a digital camera or a digital still camera.
- the imaging apparatus may further include a receiver adapted to receive a signal from the outside.
- the signal that the receiver receives is used for controlling at least the imaging range, imaging start point and imaging end point of the imaging apparatus.
- the imaging apparatus may further include a transmitter adapted to transmit an obtained image to the outside. The transmission is performed in a wired manner or a wireless manner.
- a known communication system may be used, such as Wi-Fi or Bluetooth (registered trademark).
- the presence of the receiver and the transmitter enables the imaging apparatus to be used as a network camera.
- a layer of the organic compound was formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 ⁇ 10 -3 Pa in a vacuum chamber.
- the organic compound layer was formed to a thickness of 150 nm to 200 nm.
- the ionization potential of the resulting layer was measured with an atmospheric photoelectron spectrometer (AC-2 manufactured by Riken Keiki).
- a layer of the organic compound was formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 ⁇ 10 -3 Pa in a vacuum chamber.
- the organic compound layer was formed to a thickness of 150 nm to 200 nm.
- the absorption spectrum of the organic compound layer was measured with an ultraviolet-visible spectrophotometer (V-560 manufactured by JASCO Corporation). The band gap was determined from the absorption edge of the absorption spectrum.
- a 50 nm-thick organic compound layer was formed of Exemplified Compound A3 on a silicon substrate by vapor deposition.
- an organic photoelectric conversion element in which holes generated by photoelectric conversion can efficiently move to the cathode.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
Abstract
An organic photoelectric conversion element includes an anode, a cathode, and a photoelectric conversion portion between the anode and the cathode. The photoelectric conversion portion includes a first organic compound layer containing an organic compound. Also, a second organic compound layer is disposed between the cathode and the photoelectric conversion portion. The second organic compound layer contains an organic compound having an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more.
Description
The present invention relates to an organic photoelectric conversion element, an optical area sensor, an imaging device, and an imaging apparatus.
Two-dimensional light-receiving devices are widely used as an imaging device. This type of imaging device includes pixels defined by photoelectric conversion portions two-dimensionally arranged in a semiconductor, and singles produced in the pixels by photoelectric conversion are transferred as charges and read out by a CCD circuit or a CMOS circuit.
A photodiode including a photoelectric conversion portion containing an organic compound has been known.
In the organic photoelectric conversion element disclosed in PTL 1, the holes generated from the photoelectric conversion layer do not efficiently reach a hole-collecting electrode. Thus, this organic photoelectric conversion element has room for improvement.
The present invention provides an organic photoelectric conversion element in which holes generated by photoelectric conversion can efficiently move to the cathode.
According to an aspect of the present invention, there is provided an organic photoelectric conversion element including an anode, a cathode, and a photoelectric conversion portion. The organic photoelectric conversion portion includes a first organic compound layer. The organic photoelectric conversion element also includes a second organic compound layer between the cathode and the photoelectric conversion portion. The second organic compound layer contains an organic compound having an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
The present invention provides an organic photoelectric conversion element including an anode, a cathode, and a photoelectric conversion portion between the anode and the cathode. The photoelectric conversion portion includes a first organic compound layer, and a second organic compound layer is disposed between the cathode and the photoelectric conversion portion. The organic compound contained in the second organic compound layer has an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more.
Since this organic compound layer has an ionization potential of 5.1 eV or less, holes can be efficiently transferred from the photoelectric conversion portion to the cathode. Also, since the organic compound of the second organic compound layer has a band gap of 2.5 eV or more, electrons are prevented from flowing into the photoelectric conversion portion from the cathode.
Fig. 1 is a schematic sectional view of an organic photoelectric conversion element according to an embodiment of the present invention. The organic photoelectric conversion element includes a first organic compound layer 1 between a cathode 4 and an anode 5. The first organic compound layer 1 acts as a photoelectric conversion portion that converts light into charges. Since the first organic compound layer is intended to convert light into charges, it may be called a photoelectric conversion layer.
The organic photoelectric conversion element further includes a second organic compound layer 2 between the first organic compound layer and the cathode, and a third organic compound layer 3 between the first organic compound layer and the anode.
The anode 5 is connected to a readout circuit 6. The readout circuit 6 reads information according to the charge generated from the organic conversion portion and transmits the information to, for example, a signal processing section (not shown) disposed at the downstream side. The readout circuit 6 may be connected to the cathode.
The organic photoelectric conversion element also includes an inorganic protective layer 7 over the cathode. The inorganic protective layer is made of, for example, silicon oxide, silicon nitride, aluminum oxide, or the like. The protective layer may be formed by vapor deposition, sputtering, ALD (atomic layer deposition), or the like.
A color filter 8 is disposed on the inorganic protective layer. The color filter may transmit red light of visible light. If a plurality of organic photoelectric conversion elements are arranged, a plurality of color filters may be provided, one for each organic photoelectric conversion element. Alternatively, a single color filter may be shared by the plurality of organic photoelectric conversion elements. The color filters may be arranged for example, in a Bayer array.
A microlens 9 is disposed on the color filter. The microlens focuses incoming light on the organic photoelectric conversion element. If a plurality of organic photoelectric conversion elements are arranged, a plurality of microlenses may be provided, one for each organic photoelectric conversion element. Alternatively, a single microlens may be shared by the plurality of organic photoelectric conversion elements.
For photoelectric conversion in the organic photoelectric conversion element, it is desirable to apply a voltage between the cathode and the anode. The voltage is desirably in the range of 0.5 V to 15 V.
Fig. 2 is an energy diagram of an organic photoelectric conversion element according to an embodiment of the present invention. Fig. 2 shows only the cathode 4, the first organic compound layer 1, and the second organic compound layer 2, omitting other members or components. In Fig. 2, the line denoted by reference numeral 4 represents the energy level of the work function of the cathode. For the rectangular shapes denoted by reference numerals 1 and 2, the length in the vertical direction represents the band gap of the organic compound contained in the corresponding organic compound layer; the position of the lower side of the rectangular shape represents the ionization potential of the organic compound; and the position of the upper side of the rectangular shape represents the electron affinity.
If any of the organic compound layers contains a plurality of organic compounds, the energy of the organic compound contained with the highest proportion is shown.
In Fig. 2, the lower the position, the higher the energy. Also, the larger the length in the vertical direction of the rectangular shape, the wider the band gap.
Desirably, the organic compound of the second organic compound layer has a lower ionization potential than the organic compound of the first organic compound layer. In this condition, holes can efficiently move from the first organic compound layer to the cathode.
More specifically, the ionization potential of the organic compound in the second organic compound layer is desirably 0.5 eV or more lower than that in the first organic compound layer. Also, the ionization potential of the organic compound in the second organic compound layer is desirably higher than the work function of the cathode.
Hence, it is desirable that the ionization potential of the organic compound in the second organic compound layer be higher than the work function of the cathode and lower than the ionization potential of the organic compound in the first organic compound layer.
Desirably, the organic compound in the second organic compound layer has a lower electron affinity than the organic compound in the first organic compound layer. In this condition, electrons can be prevented from flowing into the first organic compound layer from the cathode. More specifically, the electron affinity of the organic compound in the second organic compound layer is desirably 0.5 eV or more lower than that in the first organic compound layer. Also, the electron affinity of the organic compound in the second organic compound layer is desirably 1.0 eV or more lower than the work function of the cathode.
Desirably, the organic compound in the second organic compound layer is resistant to water. This is because the second organic compound layer is disposed closer to the outside than the first organic compound layer, accordingly, more liable to be affected by moisture entering from the outside. More specifically, it is desirable that the organic compound in the second organic compound layer be less soluble in water or less reactive to water.
The organic compound in the second organic compound layer is more resistant to water than the organic compound contained in the hole blocking layer disclosed in PTL 1.
The water resistance of organic compounds can be estimated in accordance with the following procedure. An organic compound layer is formed to a thickness of 50 nm or more on a silicon substrate by vacuum deposition using resistance heating at 5 × 10-3 Pa in a vacuum chamber of a vapor deposition apparatus. Water is dropped onto the organic compound layer and is allowed to stand for 10 minutes.
Then, the thickness of the organic compound layer is measured 10 minutes after water has been dropped. The water resistance thus can be estimated by comparing the thicknesses before and after dropping water. The rate of decrease in thickness at this time can be measured with, for example, an instrument P-16 manufactured by KLA-Tencor. This is calculated using the average of measurements at two points at both ends of a droplet trace.
The rate of decrease in thickness of the water-resistant organic compound layer is desirably in the range of 0% to 50%, more desirably in the range of 0% to 30%, such as in the range of 0% to 10%.
Alternatively, the water resistance may be estimated by measuring the contact angle of the water droplet with the organic compound layer, instead of measuring the rate of decrease in thickness. The contact angle can be measured by a known method. For example, the contact angle may be measured with, for example, a contact angle meter DropMaster 700 and an analysis software program FAMAS (each manufactured by Kyowa Interface Science).
The contact angle with the water-resistant organic compound layer is desirably in the range of 50° to 120°, such as in the range of 70° to 100°.
A high water resistance of an organic compound layer suggests that the organic compound in the organic compound layer is resistant to water. Water-resistant organic compound layers are unlikely to be altered in surface profile of the organic compound layer even if water is dropped thereon. Therefore the contact angle of the water droplet is large or the rate of decrease in thickness is low.
Desirably, the second organic compound layer contains at least one selected from the group consisting of imidazolidene derivatives, benzoimidazolidene derivatives, and acridinylidene derivatives.
The second organic compound layer may be in contact with the cathode.
The ionization potential can be measured in accordance with the following procedure.
An organic compound layer is formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 × 10-3 Pa in a vacuum chamber. Desirably, the layer is deposited to a thickness in the range of about 150 nm to 200 nm. Then, the ionization potential of the resulting layer is measured with an atmospheric photoelectron spectrometer, for example, AC-2 manufactured by Riken Keiki.
The band gap can be measured in accordance with the following procedure.
An organic compound layer is formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 × 10-3 Pa in a vacuum chamber. Desirably, the layer is deposited to a thickness in the range of about 150 nm to 200 nm. For determining band gap, an absorption spectrum is measured with an ultraviolet-visible spectrophotometer or the like. The band gap is determined from the absorption edge of the absorption spectrum. The ultraviolet-visible spectrophotometer may be, for example, V-560 manufactured by JASCO Corporation.
The first organic compound layer of the organic photoelectric conversion element according to an embodiment of the present invention is intended to receive light and generate charges according to the amount of the light. The first organic compound layer may be called a photoelectric conversion layer because of the function thereof. The first organic compound layer may contain a plurality of organic compounds.
When the first organic compound layer contains a plurality of organic compounds, a mixture of the plurality of organic compounds may form a single layer, or the plurality of organic compounds may form a multilayer composition including a plurality of layers.
If the plurality of organic compounds form a multilayer composite, it is desirable to form the layers of the composite in the direction from the anode to the cathode.
Advantageously, the first organic compound layer contains a p-type organic semiconductor or an n-type organic semiconductor. More advantageously, the first organic compound layer has, at least in part, a bulk hetero layer (mixed layer) containing a mixture of a p-type organic compound and an n-type organic compound.
The bulk hetero layer of the first organic compound layer can increase the photoelectric conversion efficiency (sensitivity) of the photoelectric conversion element. When the bulk hetero layer contains organic compounds with an optimum proportion, the mobilities of electrons and holes in the first organic compound layer are increased, and accordingly the optical response speed of the organic photoelectric conversion element can be increased.
Advantageously, the first organic compound layer contains fullerene or a fullerene derivative as the n-type organic semiconductor. A chain of molecules of the fullerene or fullerene derivative in the first organic compound layer defines a path of electrons and thus increases electron transportability, consequently increasing the optical response speed of the organic photoelectric conversion element. The fullerene or fullerene derivative content is desirably in the range of 40% by volume to 85% by volume relative to the total volume of the materials of the photoelectric conversion layer or the first organic compound layer.
Exemplary fullerenes or fullerene derivatives include Fullerene C60, Fullerene C70, Fullerene C76, Fullerene C78, Fullerene C80, Fullerene C82, Fullerene C84, Fullerene C90, Fullerene C96, Fullerene C240, Fullerene 540, mixed fullerenes, and fullerene nanotubes.
The fullerene derivative is a fullerene having a substituent. The substituent may be an alkyl group, an aryl group, a heterocyclic group, or the like.
The p-type organic semiconductor that may be contained in the first organic compound layer can act as an organic semiconductor donor, and is typically a hole-transporting, electron-donating organic compound. More specifically, the p-type organic semiconductor is one of the two organic compounds, having a lower ionization potential than the other.
Examples of the p-type organic semiconductor that can be used in the first organic compound layer include triarylamine compounds, pyran compounds, quinacridone compounds, benzidine compounds, pyrazoline compounds, styrylamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, cyanine compounds, merocyanine compounds, oxonol compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyarylene compounds, condensed aromatic hydrocarbons (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives), and metal complexes having nitrogen-containing heterocyclic compounds as ligands. Among these advantageous are triarylamine compounds, pyran compounds, quinacridone compounds, pyrrole compounds, phthalocyanine compounds, merocyanine compounds, and condensed aromatic hydrocarbons.
Fluoranthene derivatives are compounds having a fluoranthene skeleton in the chemical structure thereof. Similarly, naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, and perylene derivatives are each a compound having the skeleton of the corresponding chemical compound in the chemical structure thereof.
Desirably, the first organic compound layer is not luminescent. More specifically, "not luminescent" implies that the layer has a luminescent quantum efficiency of 1% or less, desirably 0.5% or less, such as 0.1% or less, in the visible wavelength region (400 nm to 730 nm). If the luminescent quantum efficiency of the photoelectric conversion portion exceeds 1%, sensing performance or imaging performance is adversely affected when the organic photoelectric conversion element is applied to a censor or an imaging device.
The organic photoelectric conversion element according to an embodiment of the present invention may further include a third organic compound layer between the anode and the first organic compound layer. The third organic compound layer is intended to prevent holes from entering the first organic compound layer from the anode and desirably has a high ionization potential.
The organic compound layer according to an embodiment may include a substrate. The substrate may be a silicon substrate, a glass substrate, a flexible substrate, or the like.
The cathode of the organic photoelectric conversion element is an electrode that collects holes of the charges generated in the photoelectric conversion portion. The cathode may be made of an electrically conductive transparent material. In a structure where the cathode is disposed near the side of the organic photoelectric conversion element through which light enters, it is desirable that the cathode be optically transparent. The cathode may be called a hole-collecting electrode or a negative electrode.
Examples of the cathode material include metals, metal oxides, metal nitrides, metal borides, organic electroconductive compounds, and mixture thereof. More specifically, cathode materials include elemental metals, such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, aluminum, titanium, and manganese; mixtures or alloys of these elemental metals; antimony- or fluorine-doped tin oxide (ATO, FTO); electroconductive metal oxides, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); inorganic electroconductive compounds, such as copper iodide and copper sulfide; organic electroconductive materials, such as polyaniline, polythiophene, and polypyrrole; and composites including an organic electroconductive material layer and an ITO or titanium nitride layer.
The anode of the organic photoelectric conversion element is an electrode that collects electrons of the charges generated in the photoelectric conversion portion. In a structure where the anode is disposed on the side of the organic photoelectric conversion element through which light enters, it is desirable that the anode be optically transparent. The anode may be called an electron-collecting electrode or a positive electrode.
Examples of the cathode material include metals, metal oxides, metal nitrides, metal borides, organic electroconductive compounds, and mixture thereof. More specifically, cathode materials include elemental metals, such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, aluminum, titanium, and manganese; mixtures or alloys of these elemental metals; antimony- or fluorine-doped tin oxide (ATO, FTO); electroconductive metal oxides, such as tin oxide, zinc oxide, indium oxide, Al-doped zinc oxide (AZO), indium tin oxide (ITO), indium zinc oxide (IZO), and TiO2; inorganic electroconductive compounds, such as copper iodide and copper sulfide; organic electroconductive materials, such as polyaniline, polythiophene, and polypyrrole; and composites including an organic electroconductive material layer and an ITO or titanium nitride layer.
One of the anode and the cathode that is connected to the readout circuit may be called the pixel electrode.
If a capacitor element including an insulating layer is disposed between the anode and the cathode, the anode and the cathode may be called the pixel electrode and the opposing electrode, respectively.
If either electrode is made of ITO, the ITO electrode can be formed by an electron beam method, sputtering, resistance heating vapor deposition, a chemical reaction method (for example, sol-gel method), coating with an indium tin oxide dispersion, and so forth. The resulting ITO electrode may be subjected to UV-ozone treatment, plasma treatment, or the like. If either electrode is made of TiN, the TiN electrode can be formed by reactive sputtering or any other method, and the resulting TiN electrode may be subjected to annealing, UV-ozone treatment, plasma treatment, or the like.
The organic compound layer of the photoelectric conversion element according to an embodiment of the present invention may contain an organic compound represented by any one of general formulas (1) to (6):
In formula (1), R1 to R4 each represent a group selected from the groups consisting of substituted or unsubstituted phenyl groups, substituted or unsubstituted benzyl groups, substituted or unsubstituted biphenyl groups, substituted or unsubstituted naphthyl groups, substituted or unsubstituted phenanthrenyl groups, substituted or unsubstituted fluorenyl groups, substituted or unsubstituted triphenylenyl groups, substituted or unsubstituted dibenzofuranyl groups, and substituted or unsubstituted dibenzothiophenyl groups.
R5 to R12 each represent a hydrogen atom or a group selected from the group consisting of alkyl groups having a carbon number in the range of 1 to 4 and substituted or unsubstituted aryl groups.
The aryl group may have an alkyl group having a carbon number in the range of 1 to 4 as a substituent.
In formula (2), R1 to R4 each represent a group selected from the groups consisting of substituted or unsubstituted phenyl groups, substituted or unsubstituted biphenyl groups, substituted or unsubstituted naphthyl groups, substituted or unsubstituted phenanthrene groups, substituted or unsubstituted fluorenyl groups, substituted or unsubstituted triphenylene groups, substituted or unsubstituted dibenzofuran groups, and substituted or unsubstituted dibenzothiophene groups.
In formula (3), X1 and X2 each represent an aryl group. The aryl group may have a halogen atom or an alkyl group. R1 to R16 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups, and aryl groups.
In formula (4), R1 to R28 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups having a carbon number in the range of 1 to 8, and substituted or unsubstituted aryl groups.
In formula (5), Ar1 to Ar4 each represent a substituted or unsubstituted condensed ring.
R1 to R8 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups having a carbon number in the range of 1 to 8, and substituted or unsubstituted aryl groups.
In general formula (6), Ar1 to Ar4 each represent a substituted or unsubstituted heteromonocyclic group.
R1 to R8 each represent a hydrogen atom or a substituent selected from the group consisting of halogen atoms, alkyl groups having a carbon number in the range of 1 to 8, and substituted or unsubstituted aryl groups.
The halogen atoms in general formulas (1) to (6) include fluorine, chlorine, bromine, and iodine. Fluorine is advantageous.
Advantageously, the alkyl groups in the above general formulas have a carbon number in the range of 1 to 8. Examples of the alkyl groups having a carbon number in the range of 1 to 8 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, and n-octyl.
Examples of the aryl groups include phenyl, naphthyl, phenanthrenyl, chrysenyl, pyrenyl, fluorenyl, and fluoranthenyl. Phenyl is particularly advantageous.
Examples of the condensed rings include naphthyl, indenyl, phenanthrenyl, anthracenyl, pyrenyl, fluorenyl, quinolinyl, isoquinolinyl, azaphenanthrenyl, phenanthronyl, benzothienyl, dibenzothienyl, benzofuranyl, and dibenzofuranyl.
Among these condensed rings, naphthyl, indenyl, phenanthrenyl, anthracenyl, pyrenyl, and fluorenyl are hydrocarbons consisting entirely of hydrogen and carbon.
On the other hand, quinolinyl, isoquinolinyl, azaphenanthrenyl, phenanthronyl, benzothienyl, dibenzothienyl, benzofuranyl, and dibenzofuranyl are condensed rings each containing a heteroatom. Advantageously, the condensed rings each consist entirely of hydrogen and carbon.
Each heteromonocyclic group may be a 6-membered aromatic ring including carbon and nitrogen atoms or a 5-membered ring including a carbon atom and any of nitrogen, sulfur, and oxygen atoms. More specifically, examples of the heteromonocyclic groups include pyridyl, pyrazyl, pyrimidyl, pyrididazoyl, triazyl, pyrrole, furanyl, thienyl, imidazole, pyrazole, oxazole, thiazole, imidazoline, and thiazine.
If the above-described groups of general formulas (1) to (6) have a substituent, the substituent is selected from the group consisting of halogen atoms, alkyl groups, and aryl groups. In this instance, the halogen atom is desirably fluorine. The alkyl group desirably has a carbon number in the range of 1 to 8. The aryl group is desirably phenyl, naphthyl, phenanthrenyl, chrysenyl, pyrenyl, fluorenyl, and fluoranthenyl, and more desirably phenyl.
Examples of the organic compound expressed by general formula (1) are shown below.
Examples of the organic compound expressed by general formula (2) are shown below.
Examples of the organic compound expressed by general formula (3) are shown below.
Examples of the organic compound expressed by general formula (4) are shown below.
Examples of the organic compound expressed by general formula (5) are shown below.
Examples of the organic compound expressed by general formula (6) are shown below.
A process for synthesizing an organic compound of general formula (1) is disclosed by David M. Lemal in "Journal of American Chemical Society, 1964, 86 (12), pp 2518-2519". A variety of organic compounds represented by general formula (1) can be synthesized by appropriately replacing the reagent used in the disclosed process.
A process for synthesizing an organic compound of general formula (2) is disclosed by H. W. Wanzlick in "Organic Syntheses, Coll. Vol. 5, p. 115 (1973) and Vol. 47, p. 14 (1967)". A variety of organic compounds represented by general formula (2) can be synthesized by appropriately replacing the reagents used in the disclosed process.
An organic compound of general formula (3) may be synthesized by, for example, the following process.
A variety of organic compounds represented by general formula (3) can be synthesized by appropriately replacing the reagents corresponding to R1 to R4, X1 and X2. For example, Exemplified Compound A-1 of general formula (3) was synthesized by the following scheme.
First, a 200 mL three-neck flask was charged with the following reagents:
Compound b-11: 1.50 g (7.68 mmol)
Compound b-12: 2.41 g (15.36 mmol)
Sodium tert-butoxide: 1.47g (15.36 mmol)
Compound b-11: 1.50 g (7.68 mmol)
Compound b-12: 2.41 g (15.36 mmol)
Sodium tert-butoxide: 1.47g (15.36 mmol)
Then, after adding 100 mL of chlorobenzene, 155 mg of tri-tert-butyl phosphine was added to the mixture with stirring in a nitrogen atmosphere at room temperature. Subsequently, 86 mg of palladium acetate was added. After being heated to 131°C, the reaction liquid is stirred at this temperature (131°C) for 5 hours for reaction. After the completion of the reaction, 100 mL of water was added, and the organic phase was extracted with chloroform. Then, the organic phase was dried with anhydrous sodium sulfate and was subsequently concentrated under reduced pressure to yield a crude product. The crude product was purified through a silica gel column (toluene + ethyl acetate mixed eluent) to yield 1.31 g (yield 63%) of compound b-13 in white solid.
(2) Synthesis of Exemplified Compound A-1
(2) Synthesis of Exemplified Compound A-1
A 50 mL three-neck flask was charged with 30 mL of acetone. The acetone was subjected to bubbling with argon for 15 minutes. Then, the following reagents were added into the flask:
Compound b-13: 271 mg (1.0 mmol)
Zinc powder: 1.30 g (20.0 mmol)
Compound b-13: 271 mg (1.0 mmol)
Zinc powder: 1.30 g (20.0 mmol)
Subsequently, the reaction liquid was heated to 50°C and then stirred at this temperature (50°C) for 30 minutes. After 12.0 mL of concentrated hydrochloric acid was added over a period of 30 minutes while the reaction liquid was cooled with ice. Then, the reaction liquid was stirred at room temperature for 20 hours for reaction. After the completion of the reaction, 30 mL of water was added, and the resulting yellow solid precipitate was separated out by filtration. The separated solid was rinsed with water. Thus, 177 mg (yield: 69%) of Exemplified Compound A-1 was obtained in yellow solid.
An organic compound of general formula (4) may be synthesized by, for example, the following scheme.
A variety of organic compounds represented by general formula (4) can be synthesized by appropriately replacing the reagents corresponding to R1 and R2. For example, Exemplified Compound A1 of general formula (4) was synthesized by the following scheme.
(1) Synthesis of Compound E3
(1) Synthesis of Compound E3
The following compounds and solvents were added to a 100 mL recovery flask:
E1: 2.36 g (10.0 mmol)
E2: 2.33 g (21.0 mmol)
Palladium acetate: 67 mg (0.3 mmol)
Tri-tert-butylphosphine: 0.17 mL (0.7 mol)
Sodium tert-butoxide: 2.31 g (24.0 mmol)
Toluene: 50 mL
E1: 2.36 g (10.0 mmol)
E2: 2.33 g (21.0 mmol)
Palladium acetate: 67 mg (0.3 mmol)
Tri-tert-butylphosphine: 0.17 mL (0.7 mol)
Sodium tert-butoxide: 2.31 g (24.0 mmol)
Toluene: 50 mL
The resulting solution was heated to reflux with stirring for 8 hours. After the completion of the reaction, water was added for separation. The reaction product was purified by silica gel column chromatography (eluent: heptane/chloroform = 3/1) to yield 2.34 g (yield: 79%) of Compound E3.
(2) Synthesis of Compound E4
(2) Synthesis of Compound E4
The following compound and solvent were added to a 100 mL recovery flask:
Compound E3: 1.48 g (5.00 mmol)
Triethyl orthoformate: 25 mL
Compound E3: 1.48 g (5.00 mmol)
Triethyl orthoformate: 25 mL
To the resulting solution, 0.5 mL of 12 N hydrochloric acid was added, and the mixture was stirred for 5 minutes. Then, 0.05 mL of formic acid was added, and the mixture was heated at 80°C for 4 hours with stirring. After the completion of the reaction, triethyl orthoformate was removed under reduced pressure. Then, the resulting product was dissolved in chloroform and purified by silica gel column chromatography (eluent: chloroform/methanol = 20/1) to yield 1.20 g (yield: 70%) of Compound E4.
(3) Synthesis of Exemplified Compound A1
(3) Synthesis of Exemplified Compound A1
In a nitrogen flow, the following compound and solvent were added to a 100 mL recovery flask:
E4: 342 mg (1.00 mmol)
Dehydrated THF: 20 mL
E4: 342 mg (1.00 mmol)
Dehydrated THF: 20 mL
To the resulting solution, 48 mg (2.00 mmol) of sodium hydride was added, and the mixture was stirred for 2 minutes. Then, 1 mg (0.01 mmol) of tBuOK was added, and the mixture was heated at 80°C for 10 hours with stirring. After the completion of the reaction, 20 mL of dehydrated toluene was added and the sample was filtered through celite. The filtrate was concentrated to yield powder. The powder was washed by being dispersed in dehydrated hexane and filtered to yield 160 mg (yield: 52%) of Exemplified Compound A1 in yellow powder.
The resulting compound was subjected to matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) using Autoflex LRF manufactured by Bruker.
Measured value: m/z = 612.38; Calculated value: 612.19
The resulting compound was subjected to matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) using Autoflex LRF manufactured by Bruker.
Measured value: m/z = 612.38; Calculated value: 612.19
CV measurement was performed in 0.1 M solution of tetrabutylammonium perchlorate in N,N-dimethylformamide with a Ag/Ag+ reference electrode, a Pt counter electrode, and a glassy carbon working electrode. The potential scan rate was 0.5 V/s.
For this measurement, an electrochemical analyzer Model 660C manufactured by ALS was used. Oxidation potential was -0.85 V.
An organic compound of general formula (5) may be synthesized by, for example, the following process.
A variety of organic compounds represented by general formula (5) can be synthesized by appropriately replacing the reagents corresponding to R1 and R2.
For example, Exemplified Compound A2 of general formula (5) was synthesized by the following scheme.
(1) Synthesis of Compound E3
(1) Synthesis of Compound E3
The following compounds and solvents were added to a 100 mL recovery flask:
E11: 1.36 g (10.0 mmol)
E15: 4.35 g (21.0 mmol)
Tris(dibenzylideneacetone)dipalladium (0): 274 mg (0.3 mmol)
2-Dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl: 333 mg (0.7 mmol)
Sodium tert-butoxide: 2.31 g (24.0 mmol)
Toluene: 50 mL
E11: 1.36 g (10.0 mmol)
E15: 4.35 g (21.0 mmol)
Tris(dibenzylideneacetone)dipalladium (0): 274 mg (0.3 mmol)
2-Dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl: 333 mg (0.7 mmol)
Sodium tert-butoxide: 2.31 g (24.0 mmol)
Toluene: 50 mL
The resulting solution was heated to reflux for 8 hours with stirring. After the completion of the reaction, the reaction mixture was filtered through celite and then subjected to separation by adding water. The separated reaction product was purified by silica gel column chromatography (eluent: heptane/chloroform = 3/1 to 2/1) to yield 2.53 g (yield: 65%) of Compound E3.
(2) Synthesis of Compound E4
(2) Synthesis of Compound E4
The following compound and solvent were added to a 100 mL recovery flask:
E27: 1.94 g (5.00 mmol)
Triethyl orthoformate: 50 mL
E27: 1.94 g (5.00 mmol)
Triethyl orthoformate: 50 mL
To the resulting solution, 0.8 mL of 12 N hydrochloric acid was added, and the mixture was stirred for 5 minutes. Then, 0.05 mL of formic acid was added, and the mixture was heated at 80°C for 4 hours with stirring. After the completion of the reaction, 20 mL of diethyl ether was added to the cooled reaction mixture. Precipitated crystals were collected by filtration. After being washed with diethyl ether, the crystals were dried at 120°C under reduced pressure to yield 1.73 g (yield: 80%) of Compound E28.
(3) Synthesis of Exemplified Compound A2
(3) Synthesis of Exemplified Compound A2
In a nitrogen flow, the following compound and solvent were added to a 100 mL recovery flask:
E4: 435 mg (1.00 mmol)
Dehydrated DMF: 5 mL
E4: 435 mg (1.00 mmol)
Dehydrated DMF: 5 mL
After degassing the resulting solution with nitrogen, 96 mg (4.00 mmol) of sodium hydride was added, and the mixture was stirred for 2 minutes. Then, 44 mg (0.4 mmol) of tBuOK was added, and the mixture was heated at 30°C for 24 hours with stirring. After the completion of the reaction, 10 mL of water degassed with nitrogen was gradually added to the sample with stirring to precipitate the reaction product, and then the solvent was removed using a syringe. After the operation of adding 10 mL of water degassed with nitrogen and then removing the solvent using the syringe was performed twice, 10 mL of degassed hexane was added, and the sample was washed and dispersed with ultrasonic waves. Then, the reaction product was collected by filtration through a membrane filter and washed with hexane to yield 267 mg (yield: 67%) of Exemplified Compound A2 in yellow powder.
The resulting compound was subjected to matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) using Autoflex LRF manufactured by Bruker.
Measured value: m/z = 796.33; Calculated value: 796.36
Measured value: m/z = 796.33; Calculated value: 796.36
CV measurement was performed in 0.1 M solution of tetrabutylammonium perchlorate in N,N-dimethylformamide with a Ag/Ag+ reference electrode, a Pt counter electrode, and a glassy carbon working electrode. The potential scan rate was 0.5 V/s.
For this measurement, an electrochemical analyzer Model 660C manufactured by ALS was used. Oxidation potential was -0.98 V.
A variety of organic compounds represented by general formula (6) can be synthesized by appropriately replacing the reagents corresponding to R1 and R2. For example, Exemplified Compound A2 of general formula (6) was synthesized by the following scheme.
(1) Synthesis of Compound E3
(1) Synthesis of Compound E3
The following compounds and solvents were added to a 100 mL recovery flask:
E1: 1.36 g (10.0 mmol)
E2: 3.30 g (21.0 mmol)
Tris(dibenzylideneacetone)dipalladium (0): 274 mg (0.3 mmol)
2-Dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl: 333 mg (0.7 mmol)
Sodium tert-butoxide: 2.31 g (24.0 mmol)
Toluene: 50 mL
E1: 1.36 g (10.0 mmol)
E2: 3.30 g (21.0 mmol)
Tris(dibenzylideneacetone)dipalladium (0): 274 mg (0.3 mmol)
2-Dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl: 333 mg (0.7 mmol)
Sodium tert-butoxide: 2.31 g (24.0 mmol)
Toluene: 50 mL
The resulting solution was heated to reflux for 8 hours with stirring. After the completion of the reaction, the reaction mixture was filtered through celite and then subjected to separation by adding water. The separated reaction product was purified by silica gel column chromatography (eluent: heptane/chloroform = 3/1 to 2/1) to yield 1.77g (yield: 61%) of Compound E3.
(2) Synthesis of Compound E4
(2) Synthesis of Compound E4
The following compound and solvent were added to a 100 mL recovery flask:
E27: 1.45 g (5.00 mmol)
Triethyl orthoformate: 50 mL
E27: 1.45 g (5.00 mmol)
Triethyl orthoformate: 50 mL
To the resulting solution, 0.8 mL of 12 N hydrochloric acid was added, and the mixture was stirred for 5 minutes. Then, 0.05 mL of formic acid was added, and the mixture was heated at 80°C for 4 hours with stirring. After the completion of the reaction, 20 mL of diethyl ether was added to the cooled reaction mixture. Precipitated crystals were collected by filtration. After being washed with diethyl ether, the crystals were dried at 120°C under reduced pressure to yield 1.51 g (yield: 90%) of Compound E4.
(3) Synthesis of Exemplified Compound A2
(3) Synthesis of Exemplified Compound A2
In a nitrogen flow, the following compound and solvent were added to a 100 mL recovery flask:
E4: 336 mg (1.00 mmol)
Dehydrated DMF: 5 mL
E4: 336 mg (1.00 mmol)
Dehydrated DMF: 5 mL
After degassing the resulting solution with nitrogen, 96 mg (4.00 mmol) of sodium hydride was added, and the mixture was stirred for 2 minutes. Then, 44 mg (0.4 mmol) of tBuOK was added, and the mixture was heated at 30°C for 24 hours with stirring. After the completion of the reaction, 10 mL of water degassed with nitrogen was gradually added to the sample with stirring to precipitate the reaction product, and then the solvent was removed using a syringe. After the operation of adding 10 mL of water degassed with nitrogen and then removing the solvent using the syringe was performed twice, 10 mL of degassed hexane was added, and the sample was washed and dispersed with ultrasonic waves. Then, the reaction product was collected by filtration through a membrane filter and washed with hexane to yield 210 mg (yield: 77%) of Exemplified Compound A2 in yellow powder.
The resulting compound was subjected to matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) using Autoflex LRF manufactured by Bruker.
Measured value: m/z = 600.29; Calculated value: 600.27
Measured value: m/z = 600.29; Calculated value: 600.27
CV measurement was performed in 0.1 M solution of tetrabutylammonium perchlorate in N,N-dimethylformamide with a Ag/Ag+ reference electrode, a Pt counter electrode, and a glassy carbon working electrode. The potential scan rate was 0.5 V/s.
For this measurement, an electrochemical analyzer Model 660C manufactured by ALS was used. Oxidation potential was -0.74V.
By replacing the organic compound used in the first organic compound layer, another organic photoelectric conversion element for light having a different color can be produced. An organic photoelectric conversion element for light having a different color implies that the element converts light in a different wavelength range from the light to be photoelectrically converted by other photoelectric conversion elements.
The organic photoelectric conversion element of an embodiment of the present invention may be used in an optical area sensor. The optical area sensor includes a plurality of organic photoelectric conversion elements arranged in a two-dimensional array defined by rows and columns. In this structure, the organic photoelectric conversion elements each generate charges and independently output the charges, and thus the optical area sensor provides information representing the distribution of light intensity in a specific light-receiving area.
Each of the plurality of organic photoelectric conversion elements of the optical area sensor may be provided with an additional optical photoelectric conversion element capable of converting light having a different color into electric energy. The additional organic photoelectric conversion element is disposed on the other organic photoelectric conversion element. The additional organic photoelectric conversion element photoelectrically converts light having a wavelength different from the light to be converted by the other organic photoelectric conversion element.
The organic photoelectric conversion element of an embodiment of the present invention may be used in an imaging device. The imaging device includes a plurality of pixels and a signal processing section. The plurality of pixels are arranged in a matrix manner including a plurality of rows and a plurality of columns. Each pixel in this structure outputs a signal to provide an image signal.
In the imaging device, each pixel includes at least one organic photoelectric conversion element.
The pixel may include a readout circuit connected to the organic photoelectric conversion element. The readout circuit includes a transistor that outputs, for example, signals according to the charge generated in the organic photoelectric conversion element.
The pixel may further include an additional organic photoelectric conversion element capable of photoelectrically converting light having a different color from the light to be converted by the other organic photoelectric conversion element. The additional organic photoelectric conversion element is disposed on the other organic photoelectric conversion element. The additional organic photoelectric conversion element photoelectrically converts light having a wavelength different from the light to be converted by the other organic photoelectric conversion element. When these two types of organic photoelectric conversion elements are combined, the imaging device does not need color filters.
The pixel may include a plurality of organic photoelectric conversion elements. Such a structure enables phase difference auto-focusing on an imaging surface. Two or more of the plurality of pixels may share a readout circuit.
The imaging device may include a wavelength selecting section. The wavelength selecting section may be a color filter. The color filter is disposed near the side through which light enters. For an organic photoelectric conversion element for a specific color, it is desirable that the color filter transmit light having the specific color. A specific color refers to light in a range of specific wavelengths. In the imaging device, a plurality of color filters may be provided, one for each pixel, or a single color filter may be shared by the plurality of pixels.
Alternatively, the wavelength selecting section may be a prism that separates out light having a specific wavelength.
The imaging device may include a microlens. The microlens is disposed near the side through which light enters and is adapted to collect incoming light to a photoelectric conversion portion. A plurality of microlenses may be provided, one for each pixel, or a single microlens may be shared by the plurality of pixels.
When the organic photoelectric conversion element of an embodiment of the present invention is used in an imaging device, an optical filter may be disposed near the side of the imaging device through which light enters. The optical filter may be a low-pass filter, a UV-cut filter capable of removing light having wavelengths lower than or equal to the wavelengths of ultraviolet radiation, or an IR-cut filter capable of removing infrared radiation. Since the optical filter reduces noise, the imaging device can form high-quality images.
The organic photoelectric conversion element of an embodiment of the present invention may be used in an imaging apparatus. An imaging apparatus includes an imaging optical system having a plurality of lenses, and an imaging device capable of receiving light that has passed through the imaging optical system. Alternatively, the imaging apparatus includes a joint section that can be connected to an imaging optical system, and an imaging device.
More specifically, the imaging apparatus may be a digital camera or a digital still camera.
The imaging apparatus may further include a receiver adapted to receive a signal from the outside. The signal that the receiver receives is used for controlling at least the imaging range, imaging start point and imaging end point of the imaging apparatus. The imaging apparatus may further include a transmitter adapted to transmit an obtained image to the outside. The transmission is performed in a wired manner or a wireless manner. For the wireless transmission, a known communication system may be used, such as Wi-Fi or Bluetooth (registered trademark).
The presence of the receiver and the transmitter enables the imaging apparatus to be used as a network camera.
The ionization potential of Exemplified Compound A1, which is represented by general formula (1), was measured in accordance with the following procedure.
A layer of the organic compound was formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 × 10-3 Pa in a vacuum chamber. The organic compound layer was formed to a thickness of 150 nm to 200 nm. The ionization potential of the resulting layer was measured with an atmospheric photoelectron spectrometer (AC-2 manufactured by Riken Keiki).
The band gap of Exemplified Compound A1, which is represented by general formula (1), was measured in accordance with the following procedure.
A layer of the organic compound was formed on an Al/Nd substrate by vacuum deposition using resistance heating at 5 × 10-3 Pa in a vacuum chamber. The organic compound layer was formed to a thickness of 150 nm to 200 nm.
The absorption spectrum of the organic compound layer was measured with an ultraviolet-visible spectrophotometer (V-560 manufactured by JASCO Corporation). The band gap was determined from the absorption edge of the absorption spectrum.
A 50 nm-thick organic compound layer was formed of Exemplified Compound A3 on a silicon substrate by vapor deposition.
Water was dropped onto the resulting organic compound layer and was allowed to stand for 10 minutes. The thickness of the organic compound layer was however not reduced. This suggests that the rate of decrease in thickness was 1% or less. It was confirmed that Exemplified Compound A3 has a high water resistance.
According to the present invention, there is provided an organic photoelectric conversion element in which holes generated by photoelectric conversion can efficiently move to the cathode.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. 2015-115237, filed June 5, 2015, which is hereby incorporated by reference herein in its entirety.
Claims (21)
- An organic photoelectric conversion element comprising:
an anode;
a cathode;
a photoelectric conversion portion between the anode and the cathode, the photoelectric conversion portion including a first organic compound layer containing an organic compound; and
a second organic compound layer between the cathode and the photoelectric conversion portion, the second organic compound layer containing an organic compound having an ionization potential of 5.1 eV or less and a band gap of 2.5 eV or more. - The organic photoelectric conversion element according to Claim 1, wherein when water is dropped onto a layer formed by depositing the organic compound of the second organic compound layer, the rate of decrease in thickness of the layer of the organic compound, measured 10 minutes after dropping water is in the range of 0% to 50%.
- The organic photoelectric conversion element according to Claim 1, wherein the electron affinity of the compound of the second organic compound layer is 0.5 eV or more lower than the electron affinity of the compound of the first organic compound layer.
- The organic photoelectric conversion element according to Claim 1, wherein the electron affinity of the compound of the second organic compound layer is 1.0 eV or more lower than the work function of the cathode.
- The organic photoelectric conversion element according to Claim 1, wherein the organic compound of the second organic compound layer has a lower ionization potential than the organic compound of the first organic compound layer.
- The organic photoelectric conversion element according to Claim 5, wherein the ionization potential of the organic compound of the second organic compound layer is 0.5 eV or more lower than the ionization potential of the organic compound of the first organic compound layer.
- The organic photoelectric conversion element according to Claim 1, wherein the first organic compound layer contains a plurality of organic compounds.
- The organic photoelectric conversion element according to Claim 1, wherein the photoelectric conversion portion further includes a third organic compound layer in contact with the first organic compound layer in such a manner that the first organic compound layer and the third organic compound layer are disposed in that order in the direction from the cathode to the anode.
- The organic photoelectric conversion element according to Claim 1, wherein the second organic compound layer contains at least one selected from the group consisting of imidazolidene derivatives, benzoimidazolidene derivatives, and acridinylidene derivatives.
- The organic photoelectric conversion element according to Claim 1, wherein the second organic compound layer is in contact with the cathode.
- An optical area sensor comprising a plurality of organic photoelectric conversion elements as set forth in Claim 1, the organic photoelectric conversion elements being arranged in a two-dimensional array including a plurality of rows and a plurality of columns.
- The optical area sensor according to Claim 11, wherein each of the plurality of organic photoelectric conversion elements is provided with an additional organic photoelectric conversion element capable of photoelectrically converting light having a different color from the light to be converted by the other photoelectric conversion element, and wherein each of the organic photoelectric conversion element and the corresponding additional organic photoelectric conversion element are disposed one on the other.
- An imaging device comprising:
a plurality of pixels arranged in a two-dimensional array including a plurality of rows and a plurality of columns; and
a signal processing section connected to the pixels,
wherein each of the pixels includes the organic photoelectric conversion element as set forth in Claim 1, and a readout circuit connected to the organic photoelectric conversion element. - The imaging device according to Claim 13, wherein each of the pixels further includes an additional organic photoelectric conversion element capable of photoelectrically converting light having a different color from the light to be converted by the other organic photoelectric conversion element, wherein the organic photoelectric conversion elements of each pixel are disposed one on the other.
- The imaging device according to Claim 14, further comprising at least one member selected from the group consisting of a wavelength selecting section, a microlens, and an optical filter near a side through which light enters.
- The imaging device according to Claim 15, wherein the at least one member is provided for each of the plurality of pixels.
- An imaging apparatus comprising:
an imaging optical system; and
an imaging device as set forth in Claim 13, the imaging device being capable of receiving light that has passed through the imaging optical system. - An imaging apparatus comprising:
a joint section capable of being connected to an imaging optical system; and
an imaging device as set forth in Claim 13. - The imaging apparatus according to Claim 17, wherein the imaging apparatus is a digital camera or a digital still camera.
- The imaging apparatus according to Claim 17, further comprising a receiver adapted to receive a signal from the outside, the signal being used for at least one control of an imaging range thereof, an imaging start point thereof, and an imaging end point thereof.
- The imaging apparatus according to Claim 17, further comprising a transmitter adapted to transmit an obtained image to the outside.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/578,654 US10541260B2 (en) | 2015-06-05 | 2016-05-24 | Organic photoelectric conversion element, optical area sensor, imaging device, and imaging apparatus |
CN201680032778.8A CN107615489B (en) | 2015-06-05 | 2016-05-24 | Organic photoelectric conversion element, optical area array sensor, imaging device, and imaging apparatus |
EP16802779.5A EP3304599A4 (en) | 2015-06-05 | 2016-05-24 | Organic photoelectric conversion element, optical area sensor, imaging device, and imaging apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-115237 | 2015-06-05 | ||
JP2015115237 | 2015-06-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016194337A1 true WO2016194337A1 (en) | 2016-12-08 |
Family
ID=57440930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/002520 WO2016194337A1 (en) | 2015-06-05 | 2016-05-24 | Organic photoelectric conversion element, optical area sensor, imaging device, and imaging apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US10541260B2 (en) |
EP (1) | EP3304599A4 (en) |
JP (1) | JP6833351B2 (en) |
CN (1) | CN107615489B (en) |
WO (1) | WO2016194337A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180213205A1 (en) * | 2017-01-20 | 2018-07-26 | Semiconductor Components Industries, Llc | Image sensors with hybrid three-dimensional imaging |
US20190119258A1 (en) * | 2017-10-25 | 2019-04-25 | Canon Kabushiki Kaisha | Organic compound and photoelectric conversion element |
CN111039924A (en) * | 2019-11-26 | 2020-04-21 | 武汉华星光电半导体显示技术有限公司 | Hole transport material with ethylene bisacridine as core and organic light-emitting diode |
US12058877B2 (en) | 2019-02-08 | 2024-08-06 | Panasonic Intellectual Property Management Co., Ltd. | Imaging apparatus including organic photoelectric conversion layer and hole blocking layer |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6552257B2 (en) * | 2015-04-30 | 2019-07-31 | キヤノン株式会社 | 2,2'-bibenzo [d] imidazolidene compound having a heterocyclic monocyclic group at the 1-position, 1'-position, 3-position, 3'-position, organic light-emitting device having the same, and display device |
JP6932564B2 (en) | 2017-06-23 | 2021-09-08 | キヤノン株式会社 | Organic photoelectric conversion element, image sensor and image sensor |
JP7346011B2 (en) | 2017-09-20 | 2023-09-19 | キヤノン株式会社 | Organic compounds and photoelectric conversion elements |
JPWO2020090989A1 (en) * | 2018-10-31 | 2021-09-24 | 日産化学株式会社 | Method for Producing Fluoroaromatic Secondary or Tertiary Amine Compound |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070063156A1 (en) | 2005-09-20 | 2007-03-22 | Fuji Photo Film Co., Ltd. | Organic photoelectric conversion element and image element |
US20070267970A1 (en) * | 2006-03-27 | 2007-11-22 | Idemitsu Kosan Co., Ltd. | Nitrogen-containing heterocyclic derivatives and organic electroluminescence device using the same |
US20080035965A1 (en) * | 2006-08-14 | 2008-02-14 | Fujifilm Corporation | Photoelectric conversion element and solid-state image pickup device |
US20090189058A1 (en) | 2008-01-25 | 2009-07-30 | Fujifilm Corporation | Photoelectric conversion element and imaging device |
US20120193612A1 (en) * | 2010-12-24 | 2012-08-02 | Lg Chem, Ltd. | Organic light emitting diode and manufacturing method thereof |
JP2013236008A (en) | 2012-05-10 | 2013-11-21 | Fujifilm Corp | Photoelectric conversion element and image sensor using the same |
US20150162549A1 (en) * | 2013-12-06 | 2015-06-11 | Canon Kabushiki Kaisha | Organic light emitting element and display device |
US20150162545A1 (en) * | 2013-12-06 | 2015-06-11 | Canon Kabushiki Kaisha | Organic light emitting element and display device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003303683A (en) * | 2002-04-09 | 2003-10-24 | Semiconductor Energy Lab Co Ltd | Luminous device |
US20040118444A1 (en) * | 2002-12-20 | 2004-06-24 | General Electric Company | Large-area photovoltaic devices and methods of making same |
FI20070063A0 (en) * | 2007-01-24 | 2007-01-24 | Ronald Oesterbacka | Organic field effect transistor |
JP2009200752A (en) * | 2008-02-20 | 2009-09-03 | Panasonic Corp | Camera module |
US8664518B2 (en) * | 2009-12-11 | 2014-03-04 | Konica Minolta Holdngs, Inc. | Organic photoelectric conversion element and producing method of the same |
JP5585232B2 (en) * | 2010-06-18 | 2014-09-10 | ソニー株式会社 | Solid-state imaging device, electronic equipment |
US9178832B2 (en) * | 2013-07-11 | 2015-11-03 | International Business Machines Corporation | Queue credit management |
JP2015050446A (en) * | 2013-09-05 | 2015-03-16 | ソニー株式会社 | Imaging element and imaging device |
DE102013111785A1 (en) * | 2013-10-25 | 2015-04-30 | Osram Oled Gmbh | Optoelectronic component and method for producing an optoelectronic component |
-
2016
- 2016-05-24 US US15/578,654 patent/US10541260B2/en active Active
- 2016-05-24 EP EP16802779.5A patent/EP3304599A4/en active Pending
- 2016-05-24 WO PCT/JP2016/002520 patent/WO2016194337A1/en active Application Filing
- 2016-05-24 CN CN201680032778.8A patent/CN107615489B/en active Active
- 2016-06-03 JP JP2016112161A patent/JP6833351B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070063156A1 (en) | 2005-09-20 | 2007-03-22 | Fuji Photo Film Co., Ltd. | Organic photoelectric conversion element and image element |
US20070267970A1 (en) * | 2006-03-27 | 2007-11-22 | Idemitsu Kosan Co., Ltd. | Nitrogen-containing heterocyclic derivatives and organic electroluminescence device using the same |
US20080035965A1 (en) * | 2006-08-14 | 2008-02-14 | Fujifilm Corporation | Photoelectric conversion element and solid-state image pickup device |
US20090189058A1 (en) | 2008-01-25 | 2009-07-30 | Fujifilm Corporation | Photoelectric conversion element and imaging device |
US20120193612A1 (en) * | 2010-12-24 | 2012-08-02 | Lg Chem, Ltd. | Organic light emitting diode and manufacturing method thereof |
JP2013236008A (en) | 2012-05-10 | 2013-11-21 | Fujifilm Corp | Photoelectric conversion element and image sensor using the same |
US20150162549A1 (en) * | 2013-12-06 | 2015-06-11 | Canon Kabushiki Kaisha | Organic light emitting element and display device |
US20150162545A1 (en) * | 2013-12-06 | 2015-06-11 | Canon Kabushiki Kaisha | Organic light emitting element and display device |
Non-Patent Citations (1)
Title |
---|
See also references of EP3304599A4 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180213205A1 (en) * | 2017-01-20 | 2018-07-26 | Semiconductor Components Industries, Llc | Image sensors with hybrid three-dimensional imaging |
US10271037B2 (en) * | 2017-01-20 | 2019-04-23 | Semiconductor Components Industries, Llc | Image sensors with hybrid three-dimensional imaging |
US20190119258A1 (en) * | 2017-10-25 | 2019-04-25 | Canon Kabushiki Kaisha | Organic compound and photoelectric conversion element |
US11555028B2 (en) * | 2017-10-25 | 2023-01-17 | Canon Kabushiki Kaisha | Organic compound and photoelectric conversion element |
US12058877B2 (en) | 2019-02-08 | 2024-08-06 | Panasonic Intellectual Property Management Co., Ltd. | Imaging apparatus including organic photoelectric conversion layer and hole blocking layer |
CN111039924A (en) * | 2019-11-26 | 2020-04-21 | 武汉华星光电半导体显示技术有限公司 | Hole transport material with ethylene bisacridine as core and organic light-emitting diode |
Also Published As
Publication number | Publication date |
---|---|
EP3304599A4 (en) | 2019-02-27 |
CN107615489A (en) | 2018-01-19 |
US20180108691A1 (en) | 2018-04-19 |
US10541260B2 (en) | 2020-01-21 |
EP3304599A1 (en) | 2018-04-11 |
CN107615489B (en) | 2020-08-11 |
JP2017005249A (en) | 2017-01-05 |
JP6833351B2 (en) | 2021-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2016194337A1 (en) | Organic photoelectric conversion element, optical area sensor, imaging device, and imaging apparatus | |
WO2017149958A1 (en) | Organic photoelectric conversion element, two-dimensional sensor, image sensor, and imaging device | |
US9842884B2 (en) | Photoelectric conversion element and image sensor | |
JP7379444B2 (en) | Organic compounds and organic photoelectric conversion elements | |
KR20220028957A (en) | Composition for photoelectric device, and image sensor and electronic device including the same | |
KR102196696B1 (en) | Photoelectric conversion element, two-dimensional sensor, image sensor and imaging device | |
JP6610257B2 (en) | Photoelectric conversion element and image sensor, solar cell, single color detection sensor and flexible sensor using the same | |
JP7013163B2 (en) | Organic compounds and photoelectric conversion elements | |
US11557727B2 (en) | Organic photoelectric conversion element, image pickup element, and image pickup apparatus | |
US20200136063A1 (en) | Compound and film and photoelectric diode and organic sensor and electronic device | |
US11895910B2 (en) | Organic compound and photoelectric conversion element | |
EP3643712B1 (en) | Compound and film and photoelectric diode and organic sensor and electronic device | |
JP7016662B2 (en) | Organic compounds, photoelectric conversion elements and imaging devices using them | |
EP3819955A1 (en) | Photoelectric conversion devices and sensors and electronic devices | |
WO2024062997A1 (en) | Compound, organic thin film, and photoelectric conversion element | |
US10468614B2 (en) | Photoelectric conversion element, image pick-up element, and image pick-up apparatus | |
KR20220115517A (en) | Material for photoelectric conversion element having dicarbazole, organic thin-film, photoelectric conversion element and imaging element | |
KR20220098602A (en) | Composition for photoelectric device, and image sensor and electronic device including the same | |
JP2020107736A (en) | Photoelectric conversion film, photoelectric conversion element and imaging device | |
JP2019006718A (en) | Organic compound, organic electronic device having the same, photoelectric conversion element having the same, imaging element and imaging device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16802779 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15578654 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2016802779 Country of ref document: EP |