WO2016080683A1 - 트리스(트리알킬실릴)포스핀의 제조방법 - Google Patents
트리스(트리알킬실릴)포스핀의 제조방법 Download PDFInfo
- Publication number
- WO2016080683A1 WO2016080683A1 PCT/KR2015/011872 KR2015011872W WO2016080683A1 WO 2016080683 A1 WO2016080683 A1 WO 2016080683A1 KR 2015011872 W KR2015011872 W KR 2015011872W WO 2016080683 A1 WO2016080683 A1 WO 2016080683A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phosphine
- triflate
- alkylsilyl
- tris
- ethane
- Prior art date
Links
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 51
- 229910000073 phosphorus hydride Inorganic materials 0.000 title claims abstract description 43
- 239000007983 Tris buffer Substances 0.000 title claims abstract description 29
- -1 alkylsilyl triflate Chemical compound 0.000 claims description 30
- 125000005103 alkyl silyl group Chemical group 0.000 claims description 29
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 27
- 150000008282 halocarbons Chemical class 0.000 claims description 25
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 101100482220 Sulfurisphaera tokodaii (strain DSM 16993 / JCM 10545 / NBRC 100140 / 7) triC gene Proteins 0.000 claims description 13
- FTVLMFQEYACZNP-UHFFFAOYSA-N trimethylsilyl trifluoromethanesulfonate Chemical compound C[Si](C)(C)OS(=O)(=O)C(F)(F)F FTVLMFQEYACZNP-UHFFFAOYSA-N 0.000 claims description 11
- 150000003512 tertiary amines Chemical class 0.000 claims description 10
- UMSVPCYSAUKCAZ-UHFFFAOYSA-N propane;hydrochloride Chemical compound Cl.CCC UMSVPCYSAUKCAZ-UHFFFAOYSA-N 0.000 claims description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- XGIAHMUOCFHQTI-UHFFFAOYSA-N Cl.Cl.Cl.Cl.CC Chemical compound Cl.Cl.Cl.Cl.CC XGIAHMUOCFHQTI-UHFFFAOYSA-N 0.000 claims description 6
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- BABPEPRNSRIYFA-UHFFFAOYSA-N silyl trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)O[SiH3] BABPEPRNSRIYFA-UHFFFAOYSA-N 0.000 claims description 4
- STMPXDBGVJZCEX-UHFFFAOYSA-N triethylsilyl trifluoromethanesulfonate Chemical compound CC[Si](CC)(CC)OS(=O)(=O)C(F)(F)F STMPXDBGVJZCEX-UHFFFAOYSA-N 0.000 claims description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical group CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 4
- RVHSTXJKKZWWDQ-UHFFFAOYSA-N 1,1,1,2-tetrabromoethane Chemical compound BrCC(Br)(Br)Br RVHSTXJKKZWWDQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 claims description 3
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 claims description 3
- LVGUZGTVOIAKKC-UHFFFAOYSA-N 1,1,1,2-tetrafluoroethane Chemical compound FCC(F)(F)F LVGUZGTVOIAKKC-UHFFFAOYSA-N 0.000 claims description 2
- WFZLZKMCANQVRC-UHFFFAOYSA-N O(S(=O)(=O)C(F)(F)F)[Si](CCC)(CCC)C Chemical compound O(S(=O)(=O)C(F)(F)F)[Si](CCC)(CCC)C WFZLZKMCANQVRC-UHFFFAOYSA-N 0.000 claims description 2
- SXBDHLZWPYKKLL-UHFFFAOYSA-N O(S(=O)(=O)C(F)(F)F)[Si](CCCC)(CCCC)C Chemical compound O(S(=O)(=O)C(F)(F)F)[Si](CCCC)(CCCC)C SXBDHLZWPYKKLL-UHFFFAOYSA-N 0.000 claims description 2
- OEGAMYZOUWNLEO-UHFFFAOYSA-N [butyl(dimethyl)silyl] trifluoromethanesulfonate Chemical compound CCCC[Si](C)(C)OS(=O)(=O)C(F)(F)F OEGAMYZOUWNLEO-UHFFFAOYSA-N 0.000 claims description 2
- DBNRFRBSFAOVBK-UHFFFAOYSA-N [diethyl(propyl)silyl] trifluoromethanesulfonate Chemical compound CCC[Si](CC)(CC)OS(=O)(=O)C(F)(F)F DBNRFRBSFAOVBK-UHFFFAOYSA-N 0.000 claims description 2
- 238000009835 boiling Methods 0.000 claims description 2
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- ZPTLEHPHXMMEDS-UHFFFAOYSA-N ethane;molecular chlorine Chemical compound CC.ClCl ZPTLEHPHXMMEDS-UHFFFAOYSA-N 0.000 claims description 2
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 claims description 2
- ZUHZZVMEUAUWHY-UHFFFAOYSA-N n,n-dimethylpropan-1-amine Chemical compound CCCN(C)C ZUHZZVMEUAUWHY-UHFFFAOYSA-N 0.000 claims description 2
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 claims description 2
- SMBYUOXUISCLCF-UHFFFAOYSA-N n-ethyl-n-methylpropan-1-amine Chemical compound CCCN(C)CC SMBYUOXUISCLCF-UHFFFAOYSA-N 0.000 claims description 2
- XWCCTMBMQUCLSI-UHFFFAOYSA-N n-ethyl-n-propylpropan-1-amine Chemical compound CCCN(CC)CCC XWCCTMBMQUCLSI-UHFFFAOYSA-N 0.000 claims description 2
- UVBMZKBIZUWTLV-UHFFFAOYSA-N n-methyl-n-propylpropan-1-amine Chemical compound CCCN(C)CCC UVBMZKBIZUWTLV-UHFFFAOYSA-N 0.000 claims description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- VYCUQEFOPNMQJI-UHFFFAOYSA-N propane;tetrahydrochloride Chemical compound Cl.Cl.Cl.Cl.CCC VYCUQEFOPNMQJI-UHFFFAOYSA-N 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims description 2
- 125000002306 tributylsilyl group Chemical group C(CCC)[Si](CCCC)(CCCC)* 0.000 claims description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims description 2
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 claims description 2
- VHHHONWQHHHLTI-UHFFFAOYSA-N hexachloroethane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)Cl VHHHONWQHHHLTI-UHFFFAOYSA-N 0.000 claims 2
- KQFILOWBMBNHPN-UHFFFAOYSA-N ClCl.CCC Chemical compound ClCl.CCC KQFILOWBMBNHPN-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims 1
- ZMVAWNCSXGFEDX-UHFFFAOYSA-N methane hydrobromide Chemical compound Br.C[H] ZMVAWNCSXGFEDX-UHFFFAOYSA-N 0.000 claims 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 1
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims 1
- 238000004880 explosion Methods 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 18
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 11
- OUMZKMRZMVDEOF-UHFFFAOYSA-N tris(trimethylsilyl)phosphane Chemical compound C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C OUMZKMRZMVDEOF-UHFFFAOYSA-N 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 125000004665 trialkylsilyl group Chemical group 0.000 description 8
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 7
- 238000001914 filtration Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000007810 chemical reaction solvent Substances 0.000 description 4
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910000799 K alloy Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000003003 phosphines Chemical class 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- OIIWPAYIXDCDNL-UHFFFAOYSA-M sodium 3-(trimethylsilyl)propionate Chemical compound [Na+].C[Si](C)(C)CCC([O-])=O OIIWPAYIXDCDNL-UHFFFAOYSA-M 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KIMGOVHKPNIKNW-UHFFFAOYSA-N BrC(C)(Br)Br.C Chemical compound BrC(C)(Br)Br.C KIMGOVHKPNIKNW-UHFFFAOYSA-N 0.000 description 2
- ZHPVBVYZVOVWMY-UHFFFAOYSA-N C[Si](CC)(C)P([Si](C)(C)CC)[Si](C)(C)CC Chemical compound C[Si](CC)(C)P([Si](C)(C)CC)[Si](C)(C)CC ZHPVBVYZVOVWMY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910000528 Na alloy Inorganic materials 0.000 description 2
- SODLQGXXYWQFFE-UHFFFAOYSA-N [ethyl(dimethyl)silyl] trifluoromethanesulfonate Chemical compound CC[Si](C)(C)OS(=O)(=O)C(F)(F)F SODLQGXXYWQFFE-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000011085 pressure filtration Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- DDQMTQUVWRTBIV-UHFFFAOYSA-N tris(triethylsilyl)phosphane Chemical compound CC[Si](CC)(CC)P([Si](CC)(CC)CC)[Si](CC)(CC)CC DDQMTQUVWRTBIV-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- WAYPXNCLNNMQKY-UHFFFAOYSA-N CC.Br.Br.Br.Br.Br.Br Chemical compound CC.Br.Br.Br.Br.Br.Br WAYPXNCLNNMQKY-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- WOVBEVIZAPKISH-UHFFFAOYSA-N O(S(=O)(=O)C(F)(F)F)[Si](CCC)(C)C Chemical compound O(S(=O)(=O)C(F)(F)F)[Si](CCC)(C)C WOVBEVIZAPKISH-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PQZTVWVYCLIIJY-UHFFFAOYSA-N diethyl(propyl)amine Chemical compound CCCN(CC)CC PQZTVWVYCLIIJY-UHFFFAOYSA-N 0.000 description 1
- IHRWBOYWQCGMDV-UHFFFAOYSA-N ethane 1,1,1,2,2,2-hexafluoroethane Chemical compound CC.FC(C(F)(F)F)(F)F IHRWBOYWQCGMDV-UHFFFAOYSA-N 0.000 description 1
- ZHLPVZFVNWLJBM-UHFFFAOYSA-N ethane hexahydrochloride Chemical compound Cl.Cl.Cl.Cl.Cl.Cl.CC ZHLPVZFVNWLJBM-UHFFFAOYSA-N 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012813 ignitable substance Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- QKVSGGHFHKAEHN-UHFFFAOYSA-N trifluoromethanesulfonic acid trimethylsilane Chemical compound C[SiH](C)C.OS(=O)(=O)C(F)(F)F QKVSGGHFHKAEHN-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/062—Organo-phosphoranes without P-C bonds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
Definitions
- the present invention relates to a process for the production of tris (trialkylsilyl) phosphine [trissil (trialkylsilyl) phosphine] with high yield and high purity without risk of fire.
- Tris (trialkylsilyl) phosphines are being considered for use in semiconductor and display related products.
- the tris (trialkylsilyl) phosphines the most known is tris (trimethylsilyl) phosphine (hereinafter also referred to as 'TMSP'), which has recently been increasingly used as a precursor for providing phosphorus.
- TMSPs TMSPs
- solvents for reaction uniformity, yield, and purity typically include: 1) white phosphorus and sodium / potassium alloy (Na) under diglyme solvent. / K alloy) by dropping funnel followed by addition of chlorotrimethylsilane (G. Becker, W. Holderch, Chem . Ber .
- Sodium phosphide was prepared by reacting sodium and whites in THF solvent, followed by addition of trimethylsilane chloride in DME solvent (FR Askham, GG Stanley, EC Marques, J. Am. Chem . Soc. 107, 7423, 1985); And 5) reacting phosphine with trimethylsilane triflate (TMSOTf) and triethylamine in dimethyl ether solvent (W. Uhlig, A. Tzschach, Z. Anorg, Allgem . Chem . 576, 281, 1988).
- the filtration process is one of the most dangerous processes in the manufacture of pyrophoric materials. Positive pressure filtration may present a risk of fire due to the release of the pyrophoric material into the air, and negative pressure filtration may cause an explosion or fire due to inflow of external air.
- tris (trialkylsilyl) phosphine itself is a substance having a strong ignition property by reacting with oxygen in the air. Therefore, when handling this, it should be handled in an inert gas environment, such as nitrogen-blocked nitrogen or helium gas, and when oxygen is introduced during the manufacturing, storage, or transportation process, the purity of the product decreases and spontaneous ignition occurs. There is a risk of fire. Therefore, in the case of using organic solvents, since the process design and operation and handling are necessary because there is a greater risk of fire and explosion, the above methods have a disadvantage of high facility investment cost and operation cost.
- step 2) C 1 tree with a mixture prepared in-provides a process for the preparation of tris (tri-C 1-5 alkylsilyl), comprising the step of adding a 5 alkylsilyl triflate phosphine.
- Tris (tri-C 1-5 alkylsilyl) production method of a phosphine according to the present invention 1) a halogenated hydrocarbon group, tri C 1 - to prepare a mixture of 5 alkylsilyl triflate and a tertiary amine; 2) adding phosphine to the mixture prepared in step 1); And a step of adding a 5 alkylsilyl triflate - and 3) C 1 tree with a mixture prepared in Step 2).
- the method for preparing tris (triC 1-5 alkylsilyl) phosphine according to the present invention relates to the synthesis of an organosyl silyl phosphine compound using phosphorus and a silicon compound as a raw material, and is represented by the following Scheme 1.
- a 1, A 2 and A 3 are each independently a C 1- 5 alkyl, it may be the same or different from each other.
- C 1- 5 alkyl can be, for example, methyl, ethyl, propyl, isopropyl, butyl, 2-butyl or t- butyl.
- Step 1 of the present invention in a halogenated hydrocarbon, tri C 1 - it is possible to prepare a mixture of 5 alkylsilyl triflate and a tertiary amine.
- the production method of the present invention may be carried out without a solvent, but in this case, it is preferable to use a solvent because the yield and purity of the reactants are lowered.
- the reaction solvent is not only non-reactive under the reaction conditions, it is preferable that the non-flammable organic solvent without the risk of fire. Therefore, in the present invention, halogenated hydrocarbons are used as the reaction solvent.
- Halogenated hydrocarbons are commonly known as polar and non-flammable substances, but they are not used as reaction solvents in highly reactive reactions using polar solvents or raw materials that pose a fire hazard. In addition, since some hydrogenated halogenated hydrocarbons are decomposed and acidic, and are also used as oxidizing agents of oxidation reactions, they are not further used in reactions using highly reactive raw materials. In addition, since halogenated hydrocarbons are known to react with white to form phosphorus-carbon bonds, many methods of synthesizing conventional TMSPs do not recommend using halogenated hydrocarbons as a reaction solvent to obtain high yield and high purity of TMSP. No halogenated hydrocarbons were used as judged no. However, in the present invention, the results of intensive studies focusing on the non-ignition of the hydrocarbon, it was confirmed that the halogenated hydrocarbon shows the process stability during the mass reaction, and can obtain TMSP with high yield and high purity.
- the halogenated hydrocarbon may be represented by the following formula (1):
- X is a halogen atom
- a is an integer of 1 ⁇ a ⁇ 5
- b is an integer from 2a-c + 2
- c is an integer of c ⁇ 2a.
- the halogen atom may be selected from the group consisting of fluorine, chlorine, and bromine, and may be chlorine.
- halogen atoms included in the halogenated hydrocarbons used in the present invention may be the same or different, but considering the economical aspect is the same.
- the halogenated hydrocarbons include difluoromethane, trifluoromethane, tetrafluoromethane, tetrafluoroethane, fluoropentane, ethane hexafluoroethane, dichloromethane (dichloromethane), chloroform, carbon tetrachloride, ethane tetrachloride, ethane chlorochloride, hexachloride It may be one or more selected from the group consisting of ethane, propane chloride, propane chloride, propane chloride, propane tetrachloride, methane tribromethane, methane tribromethane, tetrabromethane, tetrabromethane ethane, obromethane ethane, and hexabromide ethane. It doesn't happen.
- the halogenated hydrocarbons do not show reactivity with other raw materials and may be substituted with inexpensive chlorine.
- the halogenated hydrocarbon may be at least one selected from the group consisting of dichloromethane, chloroform, carbon tetrachloride, ethane tetrachloride, ethane contaminated ethane, hexachloride ethane, propane chloride, propane chloride, and prophalchloride, or dichloromethane. Methane or ethane tetrachloride.
- the halogenated hydrocarbon may have a boiling point of 10 ° C. or higher, for example, 10 ° C. to 200 ° C. at normal pressure.
- the halogenated hydrocarbon is in consideration of the ease of reaction stability, and the reaction yield and product purity of the handle can be controlled to the amount of use thereof, tri C 1 - 5 1 to 200 times, based on the weight of the alkylsilyl triflate, 1 to 100 times, 2 To 50 times, or 5 to 20 times. If the amount of the halogenated hydrocarbon tree C 1 - less than one-fold weight ratio of 5 alkylsilyl triflate not easy to control the reaction, and the reaction yield and the purity is deteriorated has disadvantages, this is economical if it exceeds 200 times Dropping, and not only the handling of the reactants after the reaction is easy, but also the yield of the reaction may be lowered.
- step 1) of the present invention triC 1-5 alkylsilyl triflate is used.
- the tree C 1 - 5 alkyl silyl triflate in a "tree C 1 - 5 alkyl” denotes methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t- butyl, pentyl, 2-pentyl, isopentyl, neopentyl, and from the group consisting of 3-methyl-butyl may be three C 1- 5 alkyl, each independently selected.
- the tree C 1 - 5 alkyl silyl triflates for example, trimethylsilyl triflate, triethylsilyl triflate, tripropyl silyl triflate, tributyl silyl triflate, dimethyl ethyl silyl triflate, methyl diethyl silyl triflate , Dimethylpropylsilyl triflate, methyldipropylsilyl triflate, dimethylbutylsilyl triflate, methyldibutylsilyl triflate and diethylpropylsilyl triflate may be selected from, but is not limited thereto. Specifically, it may be triethylsilyl triflate, trimethylsilyl triflate or dimethylethylsilyl triflate.
- step 1) of the present invention a base such as a tertiary amine may be used.
- the tertiary amine may include one or more substituents selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl and phenyl.
- the tertiary amine is, for example, trimethylamine, triethylamine, tripropylamine, tributylamine, triphenylamine, dimethylethylamine, methyldiethylamine, dimethylpropylamine, methyldipropylamine, methylethylpropylamine , Diethylpropylamine, ethyldipropylamine and ethyldiaisopropylamine, and may specifically be triethylamine.
- the tertiary amine is a tree, C 1 - may be used in 0.5 to 2 molar equivalents, based on the 5 alkylsilyl triflate.
- step 2) of the present invention phosphine may be added to the mixture prepared in step 1).
- Phosphine may be injected after cooling the temperature of the mixture prepared in step 1) to 10 ° C. or lower, specifically, 0 ° C. to 10 ° C., wherein the cooling is performed using an ice bath or a cooling device. Can be done.
- the phosphine is tree C 1 - 5 based on the alkylsilyl triflate may be added in 0.2 to 3 molar equivalents.
- the method of injecting phosphine may be a method of bubbling into the mixed solution through a tube such as a cannula.
- a method of directly injecting in a gas state or dissolving in a solvent may be used.
- steps of the present invention 3), tri-C 1 to the mixture obtained in the above step 2) can be further added to the 5 alkylsilyl triflate.
- the tree C 1 - 5 alkyl silyl triflate in step 1) the tree in the C 1 - to 5 alkylsilyl tree 50 parts by weight or less based on 100 parts by weight of a plate, in particular, may be added in an amount of 5 to 40 wt. Thereafter, after raising the temperature of the reactor to room temperature, the reaction is terminated after further reaction for 10 minutes to 3 hours.
- step 3 in the tree, C 1 - due to the addition by adding 5 alkylsilyl triflate can be prepared tris (tri-C 1-5 alkylsilyl) phosphine with improved yield.
- the reactant obtained through step 3) may be distilled under reduced pressure to obtain the desired tris (triC 1-5 alkylsilyl) phosphine by removing the solvent, unreacted material and side reactant. If necessary, the present invention may further perform a process such as filtration, adsorption, and distillation under reduced pressure in order to improve the purity of the obtained target product.
- Tris (triC 1-5 alkylsilyl) phosphine using organic solvents such as dimethyl ether produce salts that do not dissolve in the solvent during the reaction, so filtration and distillation Since the same post-process must be performed and the target compound, Tris (triC 1-5 alkylsilyl) phosphine itself, reacts with oxygen in the air to generate impurities and furthermore, it is a spontaneously ignitable substance. And since the transfer process for filtration all have to be carried out in an inert gas state such as nitrogen or argon, there is a difficulty in the existing method requires high-tech skills and expensive equipment.
- the production method of the present invention can increase the process stability by using a halogenated hydrocarbon with low risk of ignition as a solvent, there is no risk of fire or explosion, and no salt is produced so that a post-process such as filtration and distillation is not performed.
- Tris (trialkylsilyl) phosphines can be prepared in high yield and high purity without.
- the mixture was cooled with an ice bath to bring the temperature below 10 ° C.
- phosphine gas was introduced at a rate of 10 mL / min through the cannula.
- phosphine addition was stopped (step 2).
- the mixture was cooled with an ice bath so that the temperature of the mixture was 10 ° C. or lower.
- phosphine gas was introduced at a rate of 10 mL / min through the cannula.
- phosphine addition was stopped.
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US15/501,283 US10040809B2 (en) | 2014-11-18 | 2015-11-06 | Method for preparing tris(trialkylsilyl)phosphine |
JP2017514806A JP6878270B2 (ja) | 2014-11-18 | 2015-11-06 | トリス(トリアルキルシリル)ホスフィンを調製する方法 |
CN201580050721.6A CN106715448B (zh) | 2014-11-18 | 2015-11-06 | 用于制备三(三烷基甲硅烷基)膦的方法 |
EP15861205.1A EP3222623B1 (en) | 2014-11-18 | 2015-11-06 | Method for preparing tris(trialkylsilyl)phosphine |
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KR20180127224A (ko) * | 2017-05-18 | 2018-11-28 | 에스케이케미칼 주식회사 | 양자점 제조용 포스핀 전구체 및 이로부터 제조되는 양자점 |
CN109715643A (zh) * | 2016-09-29 | 2019-05-03 | 日本化学工业株式会社 | 硅烷基膦化合物的制造方法和硅烷基膦化合物 |
CN114394989A (zh) * | 2022-03-08 | 2022-04-26 | 中船(邯郸)派瑞特种气体股份有限公司 | 一种三异丙基硅基三氟甲磺酸酯的制备方法 |
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WO2018160037A1 (ko) | 2017-03-03 | 2018-09-07 | 에스케이케미칼주식회사 | 양자점 제조용 포스핀 전구체 및 이로 부터 제조되는 양자점 |
CN111868066B (zh) * | 2018-03-27 | 2024-03-22 | 日本化学工业株式会社 | 硅烷基膦化合物、硅烷基膦化合物的制造方法以及InP量子点的制造方法 |
KR102286852B1 (ko) * | 2019-04-24 | 2021-08-06 | 주식회사 제우스이엔피 | 실리콘질화막 식각액 조성물의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2907785A (en) * | 1957-10-07 | 1959-10-06 | Du Pont | Organic compounds of silicon and phosphorus and their preparation |
DD274626A1 (de) * | 1988-06-09 | 1989-12-27 | Univ Halle Wittenberg | Verfahren zur herstellung von organosilylphosphanen |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2907785A (en) * | 1957-10-07 | 1959-10-06 | Du Pont | Organic compounds of silicon and phosphorus and their preparation |
DD274626A1 (de) * | 1988-06-09 | 1989-12-27 | Univ Halle Wittenberg | Verfahren zur herstellung von organosilylphosphanen |
Non-Patent Citations (3)
Title |
---|
KAESZ, H. D. ET AL.: "Preparation and characterization of vinyldichlorophosphine, vinyldimethylphosphine, and ethyldimethyiphosphine", J. ORG. CHEM., vol. 24, no. 5, 1959, pages 635 - 637, XP055443591 * |
See also references of EP3222623A4 * |
UHLIG, W. ET AL.: "Eine neue methode zur darstellung von organosilylphosphinen", Z. ANORG. ALLGEM., vol. 576, no. 1, 1985, pages 281 - 283, XP009503051 * |
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EP3521296A4 (en) * | 2016-09-29 | 2019-08-28 | Nippon Chemical Industrial Co., Ltd. | METHOD FOR PRODUCING A SILYLPHOSPHIN COMPOUND AND SILYL PHOSPHIN COMPOUND |
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TW201627313A (zh) | 2016-08-01 |
JP2017538662A (ja) | 2017-12-28 |
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EP3222623A1 (en) | 2017-09-27 |
JP6878270B2 (ja) | 2021-05-26 |
EP3222623A4 (en) | 2018-05-02 |
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EP3222623B1 (en) | 2019-08-28 |
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